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New Design Review gitified_old_clb_svn/hw/FMC_SoftPLL/RF/library_elements
mgebyehu.nikhef.nl 9141bebf13 hw map is moved to trunk.
2013-04-16 12:15:01 +00:00

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AC AC 27
1 SweepVar freq -1 Name of variable or parameter to be swept
2 UseSweepPlan '' -1 Flag to indicate use of SweepPlan
3 SweepPlan '' -1 SweepPlan instance path name for sweep values
4 Start 1.0GHz 0 Start frequency
5 Stop 10.0GHz 0 Stop frequency
6 Step 1.0GHz 0 Step frequency
7 Center '' 0 Center frequency
8 Span '' 0 Span
9 Lin '' -1 Linear sweep
10 Dec '' -1 Number of points per decade
11 Log '' -1 Log sweep
12 Reverse '' -1 Reverse sweep
13 Pt '' 0 Frequency value if its not being swept
14 Sort 'LINEAR START STEP' -1 Sort frequencies
15 CalcNoise '' -1 Calculate noise parameters
16 NoiseNode '' -1 Nodename to compute noise voltage (repeatable)
17 SortNoise NoiseSortOff -1 Sort Noise Contribution by: Value/1, Name/2 (default: 0/NoOutput)
18 IncludePortNoise no -1 Use finite differences for sensitivities
19 NoiseThresh 0 -1 Noise Contribution Threshold
20 BandwidthForNoise 1Hz 0 Bandwidth for noise analysis
21 FreqConversion No -1 Enable AC frequency conversion
22 UseFiniteDiff no -1 Use finite differences for sensitivities
23 NestLevel 2 -1 Levels of subcircuits to output
24 StatusLevel 2 -1 Degree of annotation
25 OutputBudgetIV no -1 Output top-level pin currents and voltages
26 Freq '' 0 Frequency when not swept
27 Other '' -1 Output string to netlist
END_ELEMENT
AIRIND1 AIRIND1 6
1 N 10.0 -1 Number of turns
2 D 210.0mils 5 Diameter of form
3 L 400.0mils 5 Length of form
4 WD 32.0mils 5 Wire diameter
5 Rho 1.0 -1 Metal Resistivity (Relative to copper)
6 Temp '' 12 Physical temperature
END_ELEMENT
AIRIND2 AIRIND2 6
1 N 10.0 -1 Number of turns
2 D 210.0mils 5 Diameter of form
3 L 400.0mils 5 Length of form
4 AWG 20 -1 Wire gauge
5 Rho 1.0 -1 Metal Resistivity (Relative to copper)
6 Temp '' 12 Physical temperature
END_ELEMENT
AM_DemodTuned AM_DemodTuned 2
1 Fnom 1GHz 0 Nominal Input Frequency
2 Rout 50ohm 1 Output Resistance
END_ELEMENT
AM_ModTuned AM_ModTuned 3
1 ModIndex 1.0 -1 Modulation Index
2 Fnom 1GHz 0 Nominal Input Frequency
3 Rout 50ohm 1 Output Resistance
END_ELEMENT
Advanced_Curtice2_Model Advanced_Curtice2_Model 59
1 NFET y_n1 -1 Model Type - YES or NO
2 PFET y_n0 -1 Model Type - YES or NO
3 Idsmod 1 -1 1=CQ 2=CC 3=Statz 4=Materka 5=Tajima 6=symbolic 7=TOM 8=Modified Materka
4 Vto '' 9 Threshold voltage, V
5 Beta '' -1 Transconductance parameter, A/V^2
6 Lambda '' -1 Channel length modulation parameter, 1/V
7 Alpha '' -1 Hyperbolic tangent function parameter, 1/V
8 Tau '' 6 Transit time under gate, S
9 Taumdl y_n0 -1 Use 2nd order Bessel polynomial to model tau effect in transient
10 Tnom '' 12 Nominal ambient temperature, Celsius
11 Idstc '' -1 Ids temperature coefficient
12 Ucrit '' -1 Parameter for critical field for mobility degradation
13 Vgexp '' -1 Exponential parameter
14 Gamds '' -1 describes effective pinch-off combined with Vds
15 Vtotc '' -1 VTO Temperature Coefficient, V/Degree C
16 Betatce '' -1 BETA Exponential Temperature Coefficient, %/Degree C
17 Rgs '' 1 G-S resistance, Ohm
18 Rf '' 1 G-S effective forward-bias resistance (0. means infinity), Ohm
19 Gscap '' -1 0=none 1=linear 2=junction 3=Statz Charge 5=Statz Cap
20 Cgs '' 4 Zero-bias G-S junction cap., F
21 Cgd '' 4 Zero-bias G-D junction cap., F
22 Gdcap '' -1 0=none 1=linear 2=junction 3=Statz Charge 5=Statz Cap
23 Fc '' -1 Coefficient for forward-bias depletion cap.
24 Rgd '' 1 Gate Drain resistance, Ohm
25 Rd '' 1 Drain ohmic resistance, Ohm
26 Rg '' 1 Gate resistance, Ohm
27 Rs '' 1 Source ohmic resistance, Ohm
28 Ld '' 3 Drain inductance, H
29 Lg '' 3 Gate inductance, H
30 Ls '' 3 Source inductance, H
31 Cds '' 4 Drain-source cap., F
32 Rc '' 1 Used with CRF to model freq. dependent output conductance (0. means infinity), Ohm
33 Crf '' 4 Used with RC to model freq. dependent output conductance, F
34 Gsfwd '' -1 0=none 1=linear 2=diode
35 Gsrev '' -1 0=none 1=linear 2=diode
36 Gdfwd '' -1 0=none 1=linear 2=diode
37 Gdrev '' -1 0=none 1=linear 2=diode
38 R1 '' 1 Approximate breakdown resistance (0. Means Infinity), Ohm
39 R2 '' 1 Resistance relating breakdown voltage to channel, Ohm
40 Vbi '' 9 Built-in gate potential, V
41 Vbr '' 9 Gate junction reverse bias breakdown voltage (0. Means Infinity), V
42 Vjr '' 9 Breakdown junction potential, V
43 Is '' 10 Gate junction saturation current, A
44 Ir '' 10 Gate rev saturation current, A
45 Imax '' 10 Explosion current, A
46 Xti '' -1 Saturation Current Temperature Exponent
47 Eg '' -1 Energy Gap for Temperature Effect on IS
48 N '' -1 Gate junction emission coefficient
49 Fnc '' 0 Flicker noise corner frequency
50 R '' -1 Gate noise coefficient
51 P '' -1 Drain noise coefficient
52 C '' -1 Gate-drain noise correlation coefficient.
53 Taumdl y_n0 -1 Use 2nd order Bessel polynomial to model tau effect in transient
54 wVgfwd '' 9 Gate junction forward bias (warning), V
55 wBvgs '' 9 Gate-source reverse breakdown voltage (warning), V
56 wBvgd '' 9 Gate-drain reverse breakdown voltage (warning), V
57 wBvds '' 9 Drain-source breakdown voltage (warning), V
58 wIdsmax '' 10 Maximum drain-source current (warning), A
59 wPmax '' 8 Maximum power dissipation (warning), W
END_ELEMENT
Amplifier Amplifier 22
1 S21 dbpolar(0,0) -1 Forward Transmission Coefficient, use x+j*y, polar(x,y), dbpolar(x,y) for complex value
2 S11 polar(0,0) -1 Forward Reflection Coefficient, use x+j*y, polar(x,y), dbpolar(x,y), VSWRpolar(x,y) for complex value
3 S22 0+j*0 -1 Reverse Reflection Coefficient, use x+j*y, polar(x,y), dbpolar(x,y), VSWRpolar(x,y) for complex value
4 S12 0. -1 Reverse Transmission Coefficient, use x+j*y, polar(x,y), dbpolar(x,y) for complex value
5 NF '' 13 Noise Figure in dB
6 NFmin '' 13 Minimum Noise Figure at Sopt in dB
7 Sopt '' -1 Optimum Source Reflection for Minimum Noise Figure, use x+j*y, polar(x,y), dbpolar(x,y) for complex value
8 Rn '' 1 Equivalent Noise Resistance
9 Z1 '' 1 Reference Impedance for Port1
10 Z2 '' 1 Reference Impedance for Port2
11 GainCompType LIST -1 Gain Compression Type, parameters from following LIST or in FILE
12 GainCompFreq '' 0 Frequency at which Gain Compression is specified
13 ReferToInput OUTPUT -1 Power Levels refer to INPUT or OUTPUT
14 SOI '' -1 Second Order Intercept in dBm
15 TOI '' -1 Third Order Intercept in dBm
16 Psat '' -1 Power Saturation Point in dBm
17 GainCompSat '' 13 Gain Compression at PSat in dB
18 GainCompPower '' -1 Power Level in dBm at Gain Compression Specified by GainComp
19 GainComp 1.dB 13 Gain Compression in dB at GainCompPower
20 AM2PM '' -1 Amplitude Modulation to Phase Modulation in degrees/dB
21 PAM2PM '' -1 Power Level at AM2PM in dBm
22 GainCompFile '' -2 Filename for Gain Compression Data
END_ELEMENT
AmplifierP2D AmplifierP2D 1
1 P2DFile '' -2 Filename for P2D Data
END_ELEMENT
AmplifierS2D AmplifierS2D 4
1 S2DFile '' -2 Filename for S2D Data
2 GCFreq '' 0 Reference Frequency for Gain Compression
3 VarName '' -2 Variable That Parameterizes S2D Data
4 VarValue '' -1 Select S2D Data at VarName=VarValue
END_ELEMENT
AmplifierVC AmplifierVC 2
1 Gain (30-15*_v3) -2 Gain as a function of control voltage (_v3), in dB/V
2 Rout 50ohm 1 Output Resistance
END_ELEMENT
AntLoad AntLoad 3
1 AntType MONOPOLE -1 MONOPOLE or DIPOLE
2 Length 1m 5 Physical Antenna Length
3 RatioLR 10 -1 Length to Radius Ratio
END_ELEMENT
Attenuator Attenuator 4
1 Loss 0.dB 13 attenuation in dB
2 VSWR 1. -1 voltage standing wave ratio for both ports
3 Rref 50.ohm 1 reference resistance for both ports
4 Temp '' 12 temperature in degrees Celsius
END_ELEMENT
BALUN1 BALUN1 12
1 Z 50.0ohm 1 Characteristic impedance of transmission line
2 Len 12.0mils 5 Physical length of transmission line
3 K 2.0 -1 Effective dielectric constant
4 A 0.0 -1 Attenuation of transmission line, dB per unit length
5 F 1.0GHz 0 Frequency for scaling attenuation
6 N 5.0 -1 Number of turns
7 AL 960.0nH 3 Inductance index
8 TanD 0 -1 Dielectric loss tangent
9 Mur 1 -1 Relative permeability
10 TanM 0 -1 Permeability
11 Sigma 0 -1 Dielectric conductivity
12 Temp '' 12 Physical temperature
END_ELEMENT
BALUN2 BALUN2 12
1 Z 50.0ohm 1 Characteristic impedance of transmission line
2 Len 12.0mils 5 Physical length of transmission line
3 K 2.0 -1 Effective dielectric constant
4 A 0.0 -1 Attenuation of transmission line, dB per unit length
5 F 1.0GHz 0 Frequency for scaling attenuation
6 Mu 10.0 -1 Relative permeability of surrounding sleeve
7 L 20.0nH 3 Inductance (per unit length) of the line without the sleeve
8 TanD 0 -1 Dielectric loss tangent
9 Mur 1 -1 Relative permeability
10 TanM 0 -1 Permeability
11 Sigma 0 -1 Dielectric conductivity
12 Temp '' 12 Physical temperature
END_ELEMENT
BFINL BFINL 4
1 Subst FSub1 -1 Substrate instance name
2 D 20.0mils 5 Width of gap
3 L 1000.0mils 5 Length of finline
4 Temp '' 12 Physical temperature
END_ELEMENT
BFINLT BFINLT 3
1 Subst FSub1 -1 Substrate instance name
2 D 20.0mils 5 Width of gap
3 Temp '' 12 Physical temperature
END_ELEMENT
BIP BIP 10
1 A 0.99 -1 Magnitude of current gain ALPHA at DC
2 T 1.0nsec 6 Time delay associated with current gain
3 F 0.1GHz 0 -3dB frequency for current gain
4 Cc 10.0pF 4 Collector capacitance
5 Gc 1.0uS 2 Collector conductance
6 Rb 2.0ohm 1 Base resistance
7 Lb 1.0nH 3 Base inductance
8 Ce 10.0pF 4 Emitter capacitance
9 Re 2.0ohm 1 Emitter resistance
10 Le 1.0nH 3 Emitter inductance
END_ELEMENT
BIPB BIPB 11
1 B 20.0 -1 Magnitude of current gain BETA at DC
2 A 0.0deg 7 Phase offset of current gain
3 T 1.0nsec 6 Time delay associated with current gain
4 Cc 10.0pF 4 Collector capacitance
5 Gc 1.0uS 2 Collector conductance
6 Rb 2.0ohm 1 Base resistance
7 Lb 1.0nH 3 Base inductance
8 Ce 10.0pF 4 Emitter capacitance
9 Re 2.0ohm 1 Emitter resistance
10 Le 1.0nH 3 Emitter inductance
11 Rel 0.2ohm 1 Emitter lead resistance
END_ELEMENT
BJT4_NPN BJT4_NPN 5
1 Model BJTM1 -1 Model instance name
2 Area '' -1 Scaling Factor
3 Region '' -1 DC operating region, 0=off, 1=on, 2=rev, 3=sat
4 Temp '' 12 Device operating temperature
5 Mode simtype_nonlin -1 Simulation Mode for This Device
END_ELEMENT
BJT4_PNP BJT4_PNP 5
1 Model BJTM1 -1 Model instance name
2 Area '' -1 Scaling Factor
3 Region '' -1 DC operating region, 0=off, 1=on, 2=rev, 3=sat
4 Temp '' 12 Device operating temperature
5 Mode simtype_nonlin -1 Simulation Mode for This Device
END_ELEMENT
BJT_Model BJT_Model 61
1 NPN y_n1 -1 Model Type - YES or NO
2 PNP y_n0 -1 Model Type - YES or NO
3 Bf '' -1 Ideal Max. Forward Beta
4 Ikf '' 10 Corner for Forward Beta High Current Roll-off (0. Means Infinity), A
5 Ise '' 10 B-E Leakage Saturation Current, A
6 Ne '' -1 B-E Leakage Emission Coefficient
7 Vaf '' 9 Forward Early Voltage (0. Means Infinity), V
8 Nf '' -1 Forward Current Emission Coefficient
9 Tf '' 6 Ideal Forward Transit Time, S
10 Xtf '' -1 Coefficient of Bias Dependence for TF
11 Vtf '' 9 Voltage Dependence of TF on B-C Voltage (0. Means Infinity), V
12 Itf '' 10 Parameter for High Current Effect on TF, A
13 Ptf '' -1 Excess Phase at Freq. = 1/(TF*2PI) (Not Used), Degrees
14 Xtb '' -1 Temperature Exponent for Forward and Reverse Beta
15 Approxqb y_n1 -1 Use the approximation for Qb vs early voltage
16 Br '' -1 Ideal Max. Reverse Beta
17 Ikr '' 10 Corner for Reverse Beta High Current Roll-off (0. Means Infinity), A
18 Isc '' 10 B-C Leakage Saturation Current, A
19 Nc '' -1 B-C Leakage Emission Coefficient
20 Var '' 9 Reverse Early Voltage (0. Means Infinity), V
21 Nr '' -1 Reverse Current Emission Coefficient
22 Tr '' 6 Ideal Reverse Transit Time, S
23 Eg '' -1 Energy Gap for Temperature Effect on IS, eV
24 Is '' 10 Transport Saturation Current, A
25 Imax '' 10 Explosion current, A
26 Xti '' -1 Temperature Exponent for Saturation Current
27 Tnom '' 12 Nominal ambient temperature, Celsius
28 Nk '' -1 High-Current Roll-off Coefficient
29 Iss '' 10 Substrate P-N Saturation Current, A
30 Ns '' -1 Substrate P-N Emission Coefficient
31 Cjc '' 4 B-C Zero-bias Depletion Cap., F
32 Vjc '' 9 B-C Junction Built-in Potential, V
33 Mjc '' -1 B-C Junction Exponential Factor
34 Xcjc '' 4 Fraction of CJC That Goes to Internal Base Node
35 Fc '' -1 Forward-bias Depletion Cap. Coefficient
36 Cje '' 4 B-E Zero-bias Depletion Cap., F
37 Vje '' 9 B-E Junction Built-in Potential, V
38 Mje '' -1 B-E Junction Exponential Factor
39 Cjs '' 4 Zero-bias Collector Substrate (Ground) Cap., F
40 Vjs '' 9 Substrate Junction Built-in Potential, V
41 Mjs '' -1 Substrate Junction Exponential Factor
42 Rb '' 1 Zero-bias Base Resistance, Ohm
43 Irb '' 10 Current When Base Resistance Falls Halfway to Its Min. Value (0. Means Infinity), A
44 Rbm '' 1 Min. Base Resistance At High Currents (0. Means RB), Ohm
45 Re '' 1 Emitter Resistance, Ohm
46 Rc '' 1 Collector Resistance, Ohm
47 Kf '' -1 Flicker Noise Coefficient
48 Af '' -1 Flicker Noise Exponent
49 Kb '' -1 Burst Noise Coefficient
50 Ab '' -1 Burst Noise Exponent
51 Fb '' 0 Burst Noise Corner Frequency
52 Ffe '' -1 Flicker noise frequency exponent
53 wVsubfwd '' 9 Substrate Junction Forward Bias (warning), V
54 wBvsub '' 9 Substrate Junction Reverse Breakdown Voltage (warning), V
55 wBvbe '' 9 Base-Emitter Reverse Breakdown Voltage (warning), V
56 wBvbc '' 9 Base-Collector Reverse Breakdown Voltage (warning), V
57 wVbcfwd '' 9 Base-Collector Forward Bias (warning), V
58 wIbmax '' 10 Maximum Base Current (warning), A
59 wIcmax '' 10 Maximum Collector Current (warning), A
60 wPmax '' 8 Maximum Power Dissipation (warning), W
61 Lateral y_n0 -1 Lateral substrate geometry type
END_ELEMENT
BJTM1 BJTM1 1
1 Area '' -1 Scaling Factor
END_ELEMENT
BJT_NPN BJT_NPN 5
1 Model BJTM1 -1 Model instance name
2 Area '' -1 Scaling Factor
3 Region '' -1 DC operating region, 0=off, 1=on, 2=rev, 3=sat
4 Temp '' 12 Device operating temperature
5 Mode simtype_nonlin -1 Simulation Mode for This Device
END_ELEMENT
BJT_PNP BJT_PNP 5
1 Model BJTM1 -1 Model instance name
2 Area '' -1 Scaling Factor
3 Region '' -1 DC operating region, 0=off, 1=on, 2=rev, 3=sat
4 Temp '' 12 Device operating temperature
5 Mode simtype_nonlin -1 Simulation Mode for This Device
END_ELEMENT
BPF_Bessel BPF_Bessel 12
1 Fcenter 1.5GHz 0 Passband Center Frequency
2 BWpass 1.0GHz 0 Passband Edge-to-Edge Width
3 Apass 3dB 13 Attenuation at Stopband Edges, in dB
4 GDpass 0.9 -1 Group Delay Rolloff at Passband Edge, 0 < GDpass < 1
5 StopType OPEN -2 Input is open or short for stopband
6 MaxRej '' 13 Maximum Rejection Level , in dB
7 N 0 -1 Filter Order (if N > 0, it overwrites GDpass)
8 IL 0dB 13 Passband Insertion Loss, in dB
9 Qu 1E308 -1 Unloaded Quality Factor
10 Z1 50ohm 1 Input Port Reference Impedance
11 Z2 50ohm 1 Output Port Reference Impedance
12 Temp '' 12 Temperature in Degree Celsius
END_ELEMENT
BPF_Butterworth BPF_Butterworth 13
1 Fcenter 1.5GHz 0 Passband Center Frequency
2 BWpass 1.0GHz 0 Passband Edge-to-Edge Width
3 Apass 3dB 13 Attenuation at Passband Edges, in dB
4 BWstop 1.2GHz 0 Stopband Edge-to-Edge Width
5 Astop 20dB 13 Attenuation at Stopband Edges, in dB
6 StopType OPEN -2 Input is open or short for stopband
7 MaxRej '' 13 Maximum Rejection Level , in dB
8 N 0 -1 Filter Order (if N > 0, it overwrites BWstop and Astop)
9 IL 0dB 13 Passband Insertion Loss, in dB
10 Qu 1E308 -1 Unloaded Quality Factor
11 Z1 50ohm 1 Input Port Reference Impedance
12 Z2 50ohm 1 Output Port Reference Impedance
13 Temp '' 12 Temperature in Degree Celsius
END_ELEMENT
BPF_Chebyshev BPF_Chebyshev 14
1 Fcenter 1.5GHz 0 Passband Center Frequency
2 BWpass 1.0GHz 0 Passband Edge-to-Edge Width
3 Apass 1dB 13 Attenuation at Passband Edges, in dB
4 Ripple 1dB 13 Passband Ripple, in dB
5 BWstop 1.2GHz 0 Stopband Edge-to-Edge Width
6 Astop 20dB 13 Attenuation at Stopband Edges, in dB
7 StopType OPEN -2 Input is open or short for stopband
8 MaxRej '' 13 Maximum Rejection Level , in dB
9 N 0 -1 Filter Order (if N > 0, it overwrites BWstop and Astop)
10 IL 0dB 13 Passband Insertion Loss, in dB
11 Qu 1E308 -1 Unloaded Quality Factor
12 Z1 50ohm 1 Input Port Reference Impedance
13 Z2 50ohm 1 Output Port Reference Impedance
14 Temp '' 12 Temperature in Degree Celsius
END_ELEMENT
BPF_Elliptic BPF_Elliptic 13
1 Fcenter 1.5GHz 0 Passband Center Frequency
2 BWpass 1.0GHz 0 Passband Edge-to-Edge Width
3 Ripple 1dB 13 Passband Ripple, in dB
4 BWstop 1.2GHz 0 Stopband Edge-to-Edge Width
5 Astop 20dB 13 Attenuation at Stopband Edges, in dB
6 StopType OPEN -2 Input is open or short for stopband
7 MaxRej '' 13 Maximum Rejection Level , in dB
8 N 0 -1 Filter Order (if N > 0, it overwrites BWstop and Astop)
9 IL 0dB 13 Passband Insertion Loss, in dB
10 Qu 1E308 -1 Unloaded Quality Factor
11 Z1 50ohm 1 Input Port Reference Impedance
12 Z2 50ohm 1 Output Port Reference Impedance
13 Temp '' 12 Temperature in Degree Celsius
END_ELEMENT
BPF_Gaussian BPF_Gaussian 12
1 Fcenter 1.5GHz 0 Passband Center Frequency
2 BWpass 1.0GHz 0 Passband Edge-to-Edge Width
3 Apass 3dB 13 Attenuation at Stopband Edges, in dB
4 GDpass 0.9 -1 Group Delay Rolloff at Passband Edge, 0 < GDpass < 1
5 StopType OPEN -2 Input is open or short for stopband
6 MaxRej '' 13 Maximum Rejection Level , in dB
7 N 0 -1 Filter Order (if N > 0, it overwrites GDpass)
8 IL 0dB 13 Passband Insertion Loss, in dB
9 Qu 1E308 -1 Unloaded Quality Factor
10 Z1 50ohm 1 Input Port Reference Impedance
11 Z2 50ohm 1 Output Port Reference Impedance
12 Temp '' 12 Temperature in Degree Celsius
END_ELEMENT
BPF_PoleZero BPF_PoleZero 8
1 Poles 'list(-0.7+j*0.7, -0.7-j*0.7)' -1 List of Complex Poles
2 Zeros '' -1 List of Complex Zeros
3 Gain 1.0 -1 Gain Factor
4 Fcenter 1GHz 0 Passband Edge Frequency
5 BWpass 1.0GHz 0 Passband Edge-to-Edge Width
6 StopType OPEN -2 Input is open or short for stopband
7 Z1 50ohm 1 Input Port Reference Impedance
8 Z2 50ohm 1 Output Port Reference Impedance
END_ELEMENT
BPF_Polynomial BPF_Polynomial 8
1 Numerator 1 -1 List of Numerator Coefficients
2 Denominator list(1,1.4,1) -1 List of Denominator Coefficients
3 Gain 1.0 -1 Gain Factor
4 Fcenter 1GHz 0 Passband Edge Frequency
5 BWpass 1.0GHz 0 Passband Edge-to-Edge Width
6 StopType OPEN -2 Input is open or short for stopband
7 Z1 50ohm 1 Input Port Reference Impedance
8 Z2 50ohm 1 Output Port Reference Impedance
END_ELEMENT
BPF_RaisedCos BPF_RaisedCos 10
1 Alpha 0.35 -1 Rolloff factor defining filters excess bandwidth, 0 <= Alpha <= 1
2 Fcenter 1.5GHz 0 Passband Center Frequency
3 SymbolRate 24.3KHz 0 Digital symbol rate defining filters bandwidth
4 DelaySymbols 5 -1 Number of symbols delayed by the filter
5 Exponent 0.5 -1 Exponent Factor ( 0<= Exponent <= 1 )
6 DutyCycle 100 -1 Pulse duty cycle in percent, used for sinc(x) correction
7 SincE y_n0 -2 Yes for applying Exponent Factor on sinc(x) correction
8 Gain 1.0 -1 Gain Factor
9 Zout 50ohm 1 Output Impedance
10 WindowType 0 -1 Window Type, 0=None, 1=Hann, 2=Hamming
END_ELEMENT
BSF_Bessel BSF_Bessel 12
1 Fcenter 1.5GHz 0 Stopband Center Frequency
2 BWpass 1.0GHz 0 Passband Edge-to-Edge Width
3 Apass 3dB 13 Attenuation at Passband Edges, in dB
4 GDpass 0.9 -1 Group Delay Rolloff at Passband Edge, 0 < GDpass < 1
5 StopType OPEN -2 Input is open or short for stopband
6 MaxRej '' 13 Maximum Rejection Level , in dB
7 N 0 -1 Filter Order (if N > 0, it overwrites GDpass)
8 IL 0dB 13 Passband Insertion Loss, in dB
9 Qu 1E308 -1 Unloaded Quality Factor
10 Z1 50ohm 1 Input Port Reference Impedance
11 Z2 50ohm 1 Output Port Reference Impedance
12 Temp '' 12 Temperature in Degree Celsius
END_ELEMENT
BSF_Butterworth BSF_Butterworth 13
1 Fcenter 1.5GHz 0 Stopband Center Frequency
2 BWstop 1.0GHz 0 Stopband Edge-to-Edge Width
3 Astop 20dB 13 Attenuation at Stopband Edges, in dB
4 BWpass 1.2GHz 0 Passband Edge-to-Edge Width
5 Apass 3dB 13 Attenuation at Passband Edges, in dB
6 StopType OPEN -2 Input is open or short for stopband
7 MaxRej '' 13 Maximum Rejection Level , in dB
8 N 0 -1 Filter Order (if N > 0, it overwrites BWstop and Astop)
9 IL 0dB 13 Passband Insertion Loss, in dB
10 Qu 1E308 -1 Unloaded Quality Factor
11 Z1 50ohm 1 Input Port Reference Impedance
12 Z2 50ohm 1 Output Port Reference Impedance
13 Temp '' 12 Temperature in Degree Celsius
END_ELEMENT
BSF_Chebyshev BSF_Chebyshev 14
1 Fcenter 1.5GHz 0 Stopband Center Frequency
2 BWstop 1.0GHz 0 Stopband Edge-to-Edge Width
3 Astop 20dB 13 Attenuation at Stopband Edges, in dB
4 Ripple 1dB 13 Stopband Ripple, in dB
5 BWpass 1.2GHz 0 Passband Edge-to-Edge Width
6 Apass 1dB 13 Attenuation at Passband Edges, in dB
7 StopType OPEN -2 Input is open or short for stopband
8 MaxRej '' 13 Maximum Rejection Level , in dB
9 N 0 -1 Filter Order (if N > 0, it overwrites BWstop and Astop)
10 IL 0dB 13 Passband Insertion Loss, in dB
11 Qu 1E308 -1 Unloaded Quality Factor
12 Z1 50ohm 1 Input Port Reference Impedance
13 Z2 50ohm 1 Output Port Reference Impedance
14 Temp '' 12 Temperature in Degree Celsius
END_ELEMENT
BSF_Elliptic BSF_Elliptic 14
1 Fcenter 1.5GHz 0 Stopband Center Frequency
2 BWstop 1.0GHz 0 Stopband Edge-to-Edge Width
3 Astop 20dB 13 Attenuation at Stopband Edges, in dB
4 Ripple 1dB 13 Stopband Ripple, in dB
5 BWpass 1.2GHz 0 Passband Edge-to-Edge Width
6 Apass 1dB 13 Attenuation at Passband Edges, in dB
7 StopType OPEN -2 Input is open or short for stopband
8 MaxRej '' 13 Maximum Rejection Level , in dB
9 N 0 -1 Filter Order (if N > 0, it overwrites BWstop and Astop)
10 IL 0dB 13 Passband Insertion Loss, in dB
11 Qu 1E308 -1 Unloaded Quality Factor
12 Z1 50ohm 1 Input Port Reference Impedance
13 Z2 50ohm 1 Output Port Reference Impedance
14 Temp '' 12 Temperature in Degree Celsius
END_ELEMENT
BSF_Gaussian BSF_Gaussian 12
1 Fcenter 1.5GHz 0 Stopband Center Frequency
2 BWpass 1.0GHz 0 Passband Edge-to-Edge Width
3 Apass 3dB 13 Passband Edge-to-Edge Width
4 GDpass 0.9 -1 Group Delay Rolloff at Passband Edge, 0 < GDpass < 1
5 StopType OPEN -2 Input is open or short for stopband
6 MaxRej '' 13 Maximum Rejection Level , in dB
7 N 0 -1 Filter Order (if N > 0, it overwrites GDpass)
8 IL 0dB 13 Passband Insertion Loss, in dB
9 Qu 1E308 -1 Unloaded Quality Factor
10 Z1 50ohm 1 Input Port Reference Impedance
11 Z2 50ohm 1 Output Port Reference Impedance
12 Temp '' 12 Temperature in Degree Celsius
END_ELEMENT
BSF_PoleZero BSF_PoleZero 8
1 Poles 'list(-0.7+j*0.7, -0.7-j*0.7)' -1 List of Complex Poles
2 Zeros '' -1 List of Complex Zeros
3 Gain 1.0 -1 Gain Factor
4 Fcenter 1GHz 0 Passband Edge Frequency
5 BWpass 1.0GHz 0 Passband Edge-to-Edge Width
6 StopType OPEN -2 Input is open or short for stopband
7 Z1 50ohm 1 Input Port Reference Impedance
8 Z2 50ohm 1 Output Port Reference Impedance
END_ELEMENT
BSF_Polynomial BSF_Polynomial 8
1 Numerator 1 -1 List of Numerator Coefficients
2 Denominator list(1,1.4,1) -1 List of Denominator Coefficients
3 Gain 1.0 -1 Gain Factor
4 Fcenter 1GHz 0 Passband Edge Frequency
5 BWpass 1.0GHz 0 Passband Edge-to-Edge Width
6 StopType OPEN -2 Input is open or short for stopband
7 Z1 50ohm 1 Input Port Reference Impedance
8 Z2 50ohm 1 Output Port Reference Impedance
END_ELEMENT
BSF_RaisedCos BSF_RaisedCos 10
1 Alpha 0.35 -1 Rolloff factor defining filters excess bandwidth, 0 <= Alpha <= 1
2 Fcenter 1.5GHz 0 Passband Center Frequency
3 SymbolRate 24.3KHz 0 Digital symbol rate defining filters bandwidth
4 DelaySymbols 5 -1 Number of symbols delayed by the filter
5 Exponent 0.5 -1 Exponent Factor ( 0<= Exponent <= 1 )
6 DutyCycle 100 -1 Pulse duty cycle in percent, used for sinc(x) correction
7 SincE y_n0 -2 Yes for applying Exponent Factor on sinc(x) correction
8 Gain 1.0 -1 Gain Factor
9 Zout 50ohm 1 Output Impedance
10 WindowType 0 -1 Window Type, 0=None, 1=Hann, 2=Hamming
END_ELEMENT
BSIM1_Model BSIM1_Model 90
1 NMOS y_n1 -1 Model Type - YES or NO
2 PMOS y_n0 -1 Model Type - YES or NO
3 Idsmod 4 -1 1=LEVEL1 2=LEVEL2 3=LEVEL3 4=BSIM1 5=BSIM2 6=NMOD 8=BSIM3
4 Rsh '' -1 Drain and Source Diffusion Sheet Resistance, Ohm/Sq
5 Js '' 10 Gate Saturation Current, A
6 Temp '' 12 Parameter Measurement temperature, Celsius
7 Muz '' -1 Surface Mobility at VDS=0 VGS=VTH, cm^2/(V*s)
8 Dl '' 5 Shortening of Channel, m
9 Dw '' 5 Narrowing of Channel, m
10 Vdd '' 9 Measurement Drain Bias Range, V
11 Vfb '' 9 Flat-Band Voltage, V
12 Lvfb '' -1 Length Dependence of Vfb, um*V
13 Wvfb '' -1 Width Dependence of Vfb, um*V
14 Phi '' 9 Surface Potential, V
15 Lphi '' -1 Length Dependence of Phi, um*V
16 Wphi '' -1 Width Dependence of Phi, um*V
17 K1 '' -1 Body Effect Coefficient, V^(1/2)
18 Lk1 '' -1 Length Dependence of K1, um*V^(1/2)
19 Wk1 '' -1 Width Dependence of K1, um*V^(1/2)
20 K2 '' -1 Drain-Source Depletion Charge Sharing Coeff.
21 Lk2 '' -1 Length Dependence of K2, um
22 Wk2 '' -1 Width Dependence of K2, um
23 Eta '' -1 Zero-Bias Drain-Induced Barrier Lowering Coeff.
24 Leta '' -1 Length Dependence of Eta, um
25 Weta '' -1 Width Dependence of Eta, um
26 U0 '' -1 Transverse Field Mobility Degradation Coeff., 1/V
27 Lu0 '' -1 Length Dependence of U0, um/V
28 Wu0 '' -1 Width Dependence of U0, um/V
29 U1 '' -1 Zero-Bias Velocity Saturation Coeff., um/V
30 Lu1 '' -1 Length Dependence of U1, um^2/V
31 Wu1 '' -1 Width Dependence of U1, um^2/V
32 X2mz '' -1 Sens. of Mobility to Substrate Bias, cm^2/(V^2*s)
33 Lx2mz '' -1 Length Dependence of X2mz, um*cm^2/(V^2*s)
34 Wx2mz '' -1 Width Dependence of X2mz, um*cm^2/(V^2*s)
35 X2e '' -1 Sens. of Eta to Substrate Bias, 1/V
36 Lx2e '' -1 Length Dependence of X2e, um/V
37 Wx2e '' -1 Width Dependence of X2e, um/V
38 X3e '' -1 Sens. of Eta to Drain Bias, 1/V
39 Lx3e '' -1 Length Dependence of X3e, um/V
40 Wx3e '' -1 Width Dependence of X3e, um/V
41 X2u0 '' -1 Sens. of U0 to Substrate Bias, 1/V^2
42 Lx2u0 '' -1 Length Dependence of X2u0, um/V^2
43 Wx2u0 '' -1 Width Dependence of X2u0, um/V^2
44 X2u1 '' -1 Sens. of U1 to Substrate Bias, um/V^2
45 Lx2u1 '' -1 Length Dependence of X2u1, um^2/V^2
46 Wx2u1 '' -1 Width Dependence of X2u1, um^2/V^2
47 X3u1 '' -1 Sens. of U1 to Drain Bias, um/V^2
48 Lx3u1 '' -1 Length Dependence of X3u1, um^2/V^2
49 Wx3u1 '' -1 Width Dependence of X3u1, um^2/V^2
50 Mus '' -1 Mobility at VDS=VDD VGS=VTH, cm^2/(V*s)
51 Lmus '' -1 Length Dependence of Mus, um*cm^2/(V*s)
52 Wmus '' -1 Width Dependence of Mus, um*cm^2/(V*s)
53 X2ms '' -1 Sens. of Mus to Substrate Bias, cm^2/(V^2*s)
54 Lx2ms '' -1 Length Dependence of X2ms, um*cm^2/(V^2*s)
55 Wx2ms '' -1 Width Dependence of X2ms, um*cm^2/(V^2*s)
56 X3ms '' -1 Sens. of Mus to Drain Bias, cm^2/(V^2*s)
57 Lx3ms '' -1 Length Dependence of X3ms, um*cm^2/(V^2*s)
58 Wx3ms '' -1 Width Dependence of X3ms, um*cm^2/(V^2*s)
59 N0 '' -1 Zero-Bias Subthreshold Slope Coeff.
60 Ln0 '' -1 Length Dependence of N0, um
61 Wn0 '' -1 Width Dependence of N0, um
62 Nb '' -1 Sens. of N0 to Substrate Bias, 1/V
63 Lnb '' -1 Length Dependence of Nb, um/V
64 Wnb '' -1 Width Dependence of Nb, um/V
65 Nd '' -1 Sens. of N0 to Drain Bias, 1/V
66 Lnd '' -1 Length Dependence of Nd, um/V
67 Wnd '' -1 Width Dependence of Nd, um/V
68 Tox '' -1 Oxide Thickness, um
69 Cj '' -1 Zero-bias Bulk Junction Cap., F/m
70 Mj '' -1 Junction grading coefficient
71 Cjsw '' -1 Zero-bias Bulk Junction Sidewall Cap., F/m
72 Mjsw '' -1 Junction Sidewall grading coefficient
73 Pb '' 9 Bulk Junction Potential, V
74 Pbsw '' 9 Bulk Side Junction Potential, V
75 Cgso '' -1 G-S Overlap Cap., F/m
76 Cgdo '' -1 G-D Overlap Cap., F/m
77 Cgbo '' -1 G-B Overlap Cap., F/m
78 Xpart '' -1 Coefficient of Channel Charge Share
79 Kf '' -1 Flicker Noise Coefficient
80 Af '' -1 Flicker Noise Exponent
81 Ffe '' -1 Flicker noise frequency exponent
82 Rg '' 1 Gate Resistance, Ohm
83 N '' -1 Bulk P-N Emission Coefficient
84 Imax '' 10 Explosion current, A
85 wVsubfwd '' 9 Substrate Junction Forward Bias (warning), V
86 wBvsub '' 9 Substrate Junction Reverse Breakdown Voltage (warning), V
87 wBvg '' 9 Gate Oxide Breakdown Voltage (warning), V
88 wBvds '' 9 Drain-Source Breakdown Voltage (warning), V
89 wIdsmax '' 10 Maximum Drain-Source Current (warning), A
90 wPmax '' 8 Maximum Power Dissipation (warning), W
END_ELEMENT
BSIM2_Model BSIM2_Model 137
1 NMOS y_n1 -1 Model Type - YES or NO
2 PMOS y_n0 -1 Model Type - YES or NO
3 Idsmod 5 -1 1=LEVEL1 2=LEVEL2 3=LEVEL3 4=BSIM1 5=BSIM2 6=NMOD 8=BSIM3
4 Rsh '' -1 Drain and Source Diffusion Sheet Resistance, Ohm/Sq
5 Js '' -1 Gate Saturation Current, A/m^2
6 Mu0 '' -1 Surface Mobility at VDS=0 VGS=VTH, cm^2/(V*s)
7 Dl '' 5 Shortening of Channel, m
8 Dw '' 5 Narrowing of Channel, m
9 Vdd '' 9 Measurement Drain Bias Range, V
10 Vgg '' 9 Measurement Gate Bias Range, V
11 Vbb '' 9 Measurement Bulk Bias Range, V
12 Temp '' 12 Parameter Measurement temperature, Celsius
13 Tox '' -1 Oxide Thickness, um
14 Cj '' -1 Zero-bias Bulk Junction Cap., F/m^2
15 Mj '' -1 Junction grading coefficient
16 Cjsw '' -1 Zero-bias Bulk Junction Sidewall Cap., F/m
17 Mjsw '' -1 Junction Sidewall grading coefficient
18 Pb '' 9 Bulk Junction Potential, V
19 Pbsw '' 9 Bulk Side Junction Potential, V
20 Cgso '' -1 G-S Overlap Cap., F/m
21 Cgdo '' -1 G-D Overlap Cap., F/m
22 Cgbo '' -1 G-B Overlap Cap., F/m
23 Xpart '' -1 Coefficient of Channel Charge Share
24 Vfb '' 9 Flat-Band Voltage, V
25 Lvfb '' -1 Length Dependence of Vfb, um*V
26 Wvfb '' -1 Width Dependence of Vfb, um*V
27 Phi '' 9 Surface Potential, V
28 Lphi '' -1 Length Dependence of Phi, um*V
29 Wphi '' -1 Width Dependence of Phi, um*V
30 K1 '' -1 Body Effect Coefficient, V^(1/2)
31 Lk1 '' -1 Length Dependence of K1, um*V^(1/2)
32 Wk1 '' -1 Width Dependence of K1, um*V^(1/2)
33 K2 '' -1 Drain-Source Depletion Charge Sharing Coeff.
34 Lk2 '' -1 Length Dependence of K2, um
35 Wk2 '' -1 Width Dependence of K2, um
36 Eta0 '' -1 Zero-Bias Drain-Induced Barrier Lowering Coeff.
37 Leta0 '' -1 Length Dependence of Eta, um
38 Weta0 '' -1 Width Dependence of Eta, um
39 Ua0 '' -1 Transverse Field Mobility Degradation Coeff., 1/V
40 Lua0 '' -1 Length Dependence of Ua0, um/V
41 Wua0 '' -1 Width Dependence of Ua0, um/V
42 U10 '' -1 Zero-Bias Velocity Saturation Coeff., um/V
43 Lu10 '' -1 Length Dependence of U10, um^2/V
44 Wu10 '' -1 Width Dependence of U10, um^2/V
45 Mu0b '' -1 Sens. of Mobility to Substrate Bias, cm^2/(V^2*s)
46 Lmu0b '' -1 Length Dependence of Mu0b, um*cm^2/(V^2*s)
47 Wmu0b '' -1 Width Dependence of Mu0b, um*cm^2/(V^2*s)
48 Etab '' -1 Sens. of Eta to Substrate Bias, 1/V
49 Letab '' -1 Length Dependence of Etab, um/V
50 Wetab '' -1 Width Dependence of Etab, um/V
51 Uab '' -1 Sens. of Ua0 to Substrate Bias, 1/V^2
52 Luab '' -1 Length Dependence of Uab, um/V^2
53 Wuab '' -1 Width Dependence of Uab, um/V^2
54 U1b '' -1 Sens. of U1 to Substrate Bias, um/V^2
55 Lu1b '' -1 Length Dependence of U1b, um^2/V^2
56 Wu1b '' -1 Width Dependence of U1b, um^2/V^2
57 U1d '' -1 Sens. of U1 to Drain Bias, um/V^2
58 Lu1d '' -1 Length Dependence of U1d, um^2/V^2
59 Wu1d '' -1 Width Dependence of U1d, um^2/V^2
60 Mus0 '' -1 Mobility at VDS=VDD VGS=VTH, cm^2/(V*s)
61 Lmus0 '' -1 Length Dependence of Mus0, um*cm^2/(V*s)
62 Wmus0 '' -1 Width Dependence of Mus0, um*cm^2/(V*s)
63 Musb '' -1 Sens. of Mus to Substrate Bias, cm^2/(V^2*s)
64 Lmusb '' -1 Length Dependence of Musb, um*cm^2/(V^2*s)
65 Wmusb '' -1 Width Dependence of Musb, um*cm^2/(V^2*s)
66 N0 '' -1 Zero-Bias Subthreshold Slope Coeff.
67 Ln0 '' -1 Length Dependence of N0, um
68 Wn0 '' -1 Width Dependence of N0, um
69 Nb '' -1 Sens. of N0 to Substrate Bias, 1/V
70 Lnb '' -1 Length Dependence of Nb, um/V
71 Wnb '' -1 Width Dependence of Nb, um/V
72 Nd '' -1 Sens. of N0 to Drain Bias, 1/V
73 Lnd '' -1 Length Dependence of Nd, um/V
74 Wnd '' -1 Width Dependence of Nd, um/V
75 Mu20 '' -1 Empirical Parameter in Beta0 Expression
76 Lmu20 '' -1 Length Dependence of Mu20, um
77 Wmu20 '' -1 Width Dependence of Mu20, um
78 Mu2b '' -1 Sens. of Mu20 to Substrate Bias, 1/V
79 Lmu2b '' -1 Length Dependence of Mu2b, um/V
80 Wmu2b '' -1 Width Dependence of Mu2b, um/V
81 Mu2g '' -1 Sens. of Mu20 to Gate Bias, 1/V
82 Lmu2g '' -1 Length Dependence of Mu2g, um/V
83 Wmu2g '' -1 Width Dependence of Mu2g, um/V
84 Mu30 '' -1 Linear Empirical Parameter in Beta0 Expression, cm^2/(V^2*s)
85 Lmu30 '' -1 Length Dependence of Mu30, um*cm^2/(V^2*s)
86 Wmu30 '' -1 Width Dependence of Mu30, um*cm^2/(V^2*s)
87 Mu3g '' -1 Sens. of Mu3 to Gate Bias, cm^2/(V^3*s)
88 Lmu3g '' -1 Length Dependence of Mu3g, um*cm^2/(V^3*s)
89 Wmu3g '' -1 Width Dependence of Mu3g, um*cm^2/(V^3*s)
90 Mu40 '' -1 Quadratic Empirical Parameter in Beta0 Expression, cm^2/(V^3*s)
91 Lmu40 '' -1 Length Dependence of Mu40, um*cm^2/(V^3*s)
92 Wmu40 '' -1 Width Dependence of Mu40, um*cm^2/(V^3*s)
93 Mu4b '' -1 Sens. of Mu4 to Substrate Bias, cm^2/(V^4*s)
94 Lmu4b '' -1 Length Dependence of Mu4b, um*cm^2/(V^4*s)
95 Wmu4b '' -1 Width Dependence of Mu4b, um*cm^2/(V^4*s)
96 Mu4g '' -1 Sens. of Mu4 to Gate Bias, cm^2/(V^4*s)
97 Lmu4g '' -1 Length Dependence of Mu4g, um*cm^2/(V^4*s)
98 Wmu4g '' -1 Width Dependence of Mu4g, um*cm^2/(V^4*s)
99 Ub0 '' -1 Mobility Reduction to Vertical Field at Vbs=0, 1/V^2
100 Lub0 '' -1 Length Dependence of Ub0, um/V^2
101 Wub0 '' -1 Width Dependence of Ub0, um/V^2
102 Ubb '' -1 Sens. of Ub to Substrate Bias, 1/V^3
103 Lubb '' -1 Length Dependence of Ubb, um/V^3
104 Wubb '' -1 Width Dependence of Ubb, um/V^3
105 Vof0 '' 9 Threshold Voltage Offset in the Subthreshold Region, V
106 Lvof0 '' -1 Length Dependence of Vof0, um*V
107 Wvof0 '' -1 Width Dependence of Vof0, um*V
108 Vofb '' -1 Sens. of Vof to Substrate Bias
109 Lvofb '' -1 Length Dependence of Vofb, um
110 Wvofb '' -1 Width Dependence of Vofb, um
111 Vofd '' -1 Sens. of Vof to Substrate Bias
112 Lvofd '' -1 Length Dependence of Vofd, um
113 Wvofd '' -1 Width Dependence of Vofd, um
114 Ai0 '' -1 Hot-Electron-Induced Rout Degradation Coeff.
115 Lai0 '' -1 Length Dependence of Ai0, um
116 Wai0 '' -1 Width Dependence of Ai0, um
117 Aib '' -1 Sens. of Vof to Substrate Bias
118 Laib '' -1 Length Dependence of Aib, um
119 Waib '' -1 Width Dependence of Aib, um
120 Vghigh '' 9 Upper Bound for the Transition Region, V
121 Lvghigh '' -1 Length Dependence of Vghigh, um*V
122 Wvghigh '' -1 Width Dependence of Vghigh, um*V
123 Vglow '' 9 Upper Bound for the Transition Region, V
124 Lvglow '' -1 Length Dependence of Vglow, um*V
125 Wvglow '' -1 Width Dependence of Vglow, um*V
126 Kf '' -1 Flicker Noise Coefficient
127 Af '' -1 Flicker Noise Exponent
128 Ffe '' -1 Flicker noise frequency exponent
129 Rg '' 1 Gate Resistance, Ohm
130 N '' -1 Bulk P-N Emission Coefficient
131 Imax '' 10 Explosion current, A
132 wVsubfwd '' 9 Substrate Junction Forward Bias (warning), V
133 wBvsub '' 9 Substrate Junction Reverse Breakdown Voltage (warning), V
134 wBvg '' 9 Gate Oxide Breakdown Voltage (warning), V
135 wBvds '' 9 Drain-Source Breakdown Voltage (warning), V
136 wIdsmax '' 10 Maximum Drain-Source Current (warning), A
137 wPmax '' 8 Maximum Power Dissipation (warning), W
END_ELEMENT
BSIM3_Model BSIM3_Model 362
1 NMOS y_n1 -1 Model Type - YES or NO
2 PMOS y_n0 -1 Model Type - YES or NO
3 Idsmod 8 -1 1=LEVEL1 2=LEVEL2 3=LEVEL3 4=BSIM1 5=BSIM2 6=NMOD 8=BSIM3
4 Version 3.1 -1 Parameter for Model Version
5 Mobmod '' -1 Mobility Model Selector
6 Capmod '' -1 Capacitance Model Selector
7 Noimod '' -1 Noise Model Selector
8 Paramchk '' -1 Model Parameter Checking Selector
9 Binunit '' -1 Bin Unit Selector
10 Rg '' 1 Gate Resistance, Ohm
11 Rsh '' -1 Drain and Source Diffusion Sheet Resistance, Ohm/Sq
12 Nj '' -1 Bulk P-N Emission Coefficient
13 Xti '' -1 Junction Current Temperature Exponent
14 Js '' -1 Gate Saturation Current, A/m^2
15 Jsw '' -1 Sidewall Junction Reverse Saturation Current, A/m^2
16 Lint '' 5 Length Reduction Parameter, m
17 Ll '' 5 Length Reduction Parameter, m
18 Lln '' -1 Length Reduction Parameter
19 Lw '' 5 Length Reduction Parameter, m
20 Lwn '' -1 Length Reduction Parameter
21 Lwl '' 5 Length Reduction Parameter, m
22 Wint '' 5 Width Reduction Parameter, m
23 Wl '' 5 Width Reduction Parameter, m
24 Wln '' -1 Width Reduction Parameter
25 Ww '' 5 Width Reduction Parameter, m
26 Wwn '' -1 Width Reduction Parameter
27 Wwl '' 5 Width Reduction Parameter, m
28 Tnom '' 12 Parameter Measurement temperature, Celsius
29 Tox '' 5 Oxide Thickness, m
30 Cj '' -1 Zero-bias Bulk Junction Cap., F/m^2
31 Mj '' -1 Junction grading coefficient
32 Cjsw '' -1 Zero-bias Bulk Junction Sidewall Cap., F/m
33 Mjsw '' -1 Junction Sidewall grading coefficient
34 Pb '' 9 Bulk Junction Potential, V
35 Pbsw '' 9 Bulk Side Junction Potential, V
36 Cjswg '' -1 Source/Drain (Gate Side) Sidewall Cap., F/m
37 Mjswg '' -1 Source/Drain (Gate Side) Sidewall grading coefficient
38 Pbswg '' 9 Source/Drain (Gate Side) Sidewall Junction Potential, V
39 Cgso '' -1 G-S Overlap Cap., F/m
40 Cgdo '' -1 G-D Overlap Cap., F/m
41 Cgbo '' -1 G-B Overlap Cap., F/m
42 Xpart '' -1 Coefficient of Channel Charge Share
43 Dwg '' -1 Coeff. of Weffs Gate Bias Dependence, m/V
44 Ldwg '' -1 Length Dependence of Dwg
45 Wdwg '' -1 Width Dependence of Dwg
46 Pdwg '' -1 Cross Dependence of Dwg
47 Dwb '' -1 Coeff. of Weffs Bulk Bias Dependence, m/V^(1/2)
48 Ldwb '' -1 Length Dependence of Dwb
49 Wdwb '' -1 Width Dependence of Dwb
50 Pdwb '' -1 Cross Dependence of Dwb
51 Nch '' -1 Channel Doping Concentration, 1/cm^3
52 Lnch '' -1 Length Dependence of Nch
53 Wnch '' -1 Width Dependence of Nch
54 Pnch '' -1 Cross Dependence of Nch
55 Nsub '' -1 Substrate Doping Concentration, 1/cm^3
56 Lnsub '' -1 Length Dependence of Nsub
57 Wnsub '' -1 Width Dependence of Nsub
58 Pnsub '' -1 Cross Dependence of Nsub
59 Ngate '' -1 Gate Doping Concentration, 1/cm^3
60 Lngate '' -1 Length Dependence of Ngate
61 Wngate '' -1 Width Dependence of Ngate
62 Pngate '' -1 Cross Dependence of Ngate
63 Gamma1 '' -1 Body-Effect Coeff. near the Interface, V^(1/2)
64 Lgamma1 '' -1 Length Dependence of Gamma1
65 Wgamma1 '' -1 Width Dependence of Gamma1
66 Pgamma1 '' -1 Cross Dependence of Gamma1
67 Gamma2 '' -1 Body-Effect Coeff. in the Bulk, V^(1/2)
68 Lgamma2 '' -1 Length Dependence of Gamma2
69 Wgamma2 '' -1 Width Dependence of Gamma2
70 Pgamma2 '' -1 Cross Dependence of Gamma2
71 Xt '' 5 Doping Depth, m
72 Lxt '' -1 Length Dependence of Xt
73 Wxt '' -1 Width Dependence of Xt
74 Pxt '' -1 Cross Dependence of Xt
75 Vbm '' 9 Maximum Body Voltage, V
76 Lvbm '' -1 Length Dependence of Vbm
77 Wvbm '' -1 Width Dependence of Vbm
78 Pvbm '' -1 Cross Dependence of Vbm
79 Vbx '' 9 Vth Transition Body Voltage, V
80 Lvbx '' -1 Length Dependence of Vbx
81 Wvbx '' -1 Width Dependence of Vbx
82 Pvbx '' -1 Cross Dependence of Vbx
83 Xj '' 5 Junction Depth, m
84 Lxj '' -1 Length Dependence of Xj
85 Wxj '' -1 Width Dependence of Xj
86 Pxj '' -1 Cross Dependence of Xj
87 U0 '' -1 Low-Field Mobility at Tnom, cm^2/(V*s)
88 Lu0 '' -1 Length Dependence of U0
89 Wu0 '' -1 Width Dependence of U0
90 Pu0 '' -1 Cross Dependence of U0
91 Vth0 '' 9 Zero-Bias Threshold Voltage, V
92 Lvth0 '' -1 Length Dependence of Vth0
93 Wvth0 '' -1 Width Dependence of Vth0
94 Pvth0 '' -1 Cross Dependence of Vth0
95 K1 '' -1 First-Order Body Effect Coefficient, V^(1/2)
96 Lk1 '' -1 Length Dependence of K1
97 Wk1 '' -1 Width Dependence of K1
98 Pk1 '' -1 Cross Dependence of K1
99 K2 '' -1 Second-Order Body Effect Coefficient
100 Lk2 '' -1 Length Dependence of K2
101 Wk2 '' -1 Width Dependence of K2
102 Pk2 '' -1 Cross Dependence of K2
103 K3 '' -1 Narrow Width Effect Coefficient
104 Lk3 '' -1 Length Dependence of K3
105 Wk3 '' -1 Width Dependence of K3
106 Pk3 '' -1 Cross Dependence of K3
107 K3b '' -1 Narrow Width Effect Coefficient, 1/V
108 Lk3b '' -1 Length Dependence of K3b
109 Wk3b '' -1 Width Dependence of K3b
110 Pk3b '' -1 Cross Dependence of K3b
111 W0 '' 5 Narrow Width Effect Parameter, m
112 Lw0 '' -1 Length Dependence of W0
113 Ww0 '' -1 Width Dependence of W0
114 Pw0 '' -1 Cross Dependence of W0
115 Nlx '' 5 Lateral Non-Uniform Doping Coeff., m
116 Lnlx '' -1 Length Dependence of Nlx
117 Wnlx '' -1 Width Dependence of Nlx
118 Pnlx '' -1 Cross Dependence of Nlx
119 Dvt0 '' -1 First Coeff. of Short-Channel Effect on Vth
120 Ldvt0 '' -1 Length Dependence of Dvt0
121 Wdvt0 '' -1 Width Dependence of Dvt0
122 Pdvt0 '' -1 Cross Dependence of Dvt0
123 Dvt1 '' -1 Second Coeff. of Short-Channel Effect on Vth
124 Ldvt1 '' -1 Length Dependence of Dvt1
125 Wdvt1 '' -1 Width Dependence of Dvt1
126 Pdvt1 '' -1 Cross Dependence of Dvt1
127 Dvt2 '' -1 Body-Bias Coeff. of Short-Channel Effect on Vth, 1/V
128 Ldvt2 '' -1 Length Dependence of Dvt2
129 Wdvt2 '' -1 Width Dependence of Dvt2
130 Pdvt2 '' -1 Cross Dependence of Dvt2
131 Dvt0w '' -1 First Coeff. of Narrow-Width Effect on Vth
132 Ldvt0w '' -1 Length Dependence of Dvt0w
133 Wdvt0w '' -1 Width Dependence of Dvt0w
134 Pdvt0w '' -1 Cross Dependence of Dvt0w
135 Dvt1w '' -1 Second Coeff. of Narrow-Width Effect on Vth
136 Ldvt1w '' -1 Length Dependence of Dvt1w
137 Wdvt1w '' -1 Width Dependence of Dvt1w
138 Pdvt1w '' -1 Cross Dependence of Dvt1w
139 Dvt2w '' -1 Body-Bias Coeff. of Narrow-Width Effect on Vth, 1/V
140 Ldvt2w '' -1 Length Dependence of Dvt2w
141 Wdvt2w '' -1 Width Dependence of Dvt2w
142 Pdvt2w '' -1 Cross Dependence of Dvt2w
143 Ua '' -1 First Order Mobility Degradation Coeff., m/V
144 Lua '' -1 Length Dependence of Ua
145 Wua '' -1 Width Dependence of Ua
146 Pua '' -1 Cross Dependence of Ua
147 Ub '' -1 Second Order Mobility Degradation Coeff., (m/V)^2
148 Lub '' -1 Length Dependence of Ub
149 Wub '' -1 Width Dependence of Ub
150 Pub '' -1 Cross Dependence of Ub
151 Uc '' -1 Body-Bias Mobility Degradation Coeff., m/V^2 (1/V)
152 Luc '' -1 Length Dependence of Uc
153 Wuc '' -1 Width Dependence of Uc
154 Puc '' -1 Cross Dependence of Uc
155 Delta '' 9 Effective Vds parameter, V
156 Ldelta '' -1 Length Dependence of Delta
157 Wdelta '' -1 Width Dependence of Delta
158 Pdelta '' -1 Cross Dependence of Delta
159 Rdsw '' -1 Parasitic Resistance per Unit Width, Ohms*um
160 Lrdsw '' -1 Length Dependence of Rdsw
161 Wrdsw '' -1 Width Dependence of Rdsw
162 Prdsw '' -1 Cross Dependence of Rdsw
163 Prwg '' -1 Gate-Bias Effect on Parasitic Resistance, 1/V
164 Lprwg '' -1 Length Dependence of Prwg
165 Wprwg '' -1 Width Dependence of Prwg
166 Pprwg '' -1 Cross Dependence of Prwg
167 Prwb '' -1 Body Effect on Parasitic Resistance, 1/V^(1/2)
168 Lprwb '' -1 Length Dependence of Prwb
169 Wprwb '' -1 Width Dependence of Prwb
170 Pprwb '' -1 Cross Dependence of Prwb
171 Wr '' -1 Width Dependence of Rds
172 Lwr '' -1 Length Dependence of Wr
173 Wwr '' -1 Width Dependence of Wr
174 Pwr '' -1 Cross Dependence of Wr
175 Vsat '' -1 Saturation Velocity at Tnom, m/s
176 Lvsat '' -1 Length Dependence of Vsat
177 Wvsat '' -1 Width Dependence of Vsat
178 Pvsat '' -1 Cross Dependence of Vsat
179 A0 '' -1 Bulk Charge Effect Coeff.
180 La0 '' -1 Length Dependence of A0
181 Wa0 '' -1 Width Dependence of A0
182 Pa0 '' -1 Cross Dependence of A0
183 Keta '' -1 Body-Bias Coeff. of the Bulk Charge Effect, 1/V
184 Lketa '' -1 Length Dependence of Keta
185 Wketa '' -1 Width Dependence of Keta
186 Pketa '' -1 Cross Dependence of Keta
187 Ags '' -1 Gate Bias Coeff. of Abulk, 1/V
188 Lags '' -1 Length Dependence of Ags
189 Wags '' -1 Width Dependence of Ags
190 Pags '' -1 Cross Dependence of Ags
191 A1 '' -1 First Non-Saturation Factor, 1/V
192 La1 '' -1 Length Dependence of A1
193 Wa1 '' -1 Width Dependence of A1
194 Pa1 '' -1 Cross Dependence of A1
195 A2 '' -1 Second Non-Saturation Factor
196 La2 '' -1 Length Dependence of A2
197 Wa2 '' -1 Width Dependence of A2
198 Pa2 '' -1 Cross Dependence of A2
199 B0 '' 5 Bulk Charge Effect Coeff. for Channel Width, m
200 Lb0 '' -1 Length Dependence of B0
201 Wb0 '' -1 Width Dependence of B0
202 Pb0 '' -1 Cross Dependence of B0
203 B1 '' 5 Bulk Charge Effect Width Offset, m
204 Lb1 '' -1 Length Dependence of B1
205 Wb1 '' -1 Width Dependence of B1
206 Pb1 '' -1 Cross Dependence of B1
207 Alpha0 '' -1 First Parameter of Impact Ionization Current, m/V
208 Lalpha0 '' -1 Length Dependence of Alpha0
209 Walpha0 '' -1 Width Dependence of Alpha0
210 Palpha0 '' -1 Cross Dependence of Alpha0
211 Beta0 '' -1 First Parameter of Impact Ionization Current, m/V
212 Lbeta0 '' -1 Length Dependence of Beta0
213 Wbeta0 '' -1 Width Dependence of Beta0
214 Pbeta0 '' -1 Cross Dependence of Beta0
215 Voff '' 9 Offset Voltage in Subthreshold Region, V
216 Lvoff '' -1 Length Dependence of Voff
217 Wvoff '' -1 Width Dependence of Voff
218 Pvoff '' -1 Cross Dependence of Voff
219 Nfactor '' -1 Subthreshold Swing Factor
220 Lnfactor '' -1 Length Dependence of Nfactor
221 Wnfactor '' -1 Width Dependence of Nfactor
222 Pnfactor '' -1 Cross Dependence of Nfactor
223 Cdsc '' -1 Drain/Source and Channel Coupling Capacitance, F/m^2
224 Lcdsc '' -1 Length Dependence of Cdsc
225 Wcdsc '' -1 Width Dependence of Cdsc
226 Pcdsc '' -1 Cross Dependence of Cdsc
227 Cdscb '' -1 Body-Bias Dependence of Cdsc, F/(V*m^2)
228 Lcdscb '' -1 Length Dependence of Cdscb
229 Wcdscb '' -1 Width Dependence of Cdscb
230 Pcdscb '' -1 Cross Dependence of Cdscb
231 Cdscd '' -1 Drain-Bias Dependence of Cdsc, F/(V*m^2)
232 Lcdscd '' -1 Length Dependence of Cdscd
233 Wcdscd '' -1 Width Dependence of Cdscd
234 Pcdscd '' -1 Cross Dependence of Cdscd
235 Cit '' -1 Capacitance due to Interface Charge, F/m^2
236 Lcit '' -1 Length Dependence of Cit
237 Wcit '' -1 Width Dependence of Cit
238 Pcit '' -1 Cross Dependence of Cit
239 Eta0 '' -1 Subthreshold Region DIBL Coeff.
240 Leta0 '' -1 Length Dependence of Eta0
241 Weta0 '' -1 Width Dependence of Eta0
242 Peta0 '' -1 Cross Dependence of Eta0
243 Etab '' -1 Subthreshold Region DIBL Coeff.
244 Letab '' -1 Length Dependence of Etab
245 Wetab '' -1 Width Dependence of Etab
246 Petab '' -1 Cross Dependence of Etab
247 Dsub '' -1 DIBL Coeff. in Subthreshold Region
248 Ldsub '' -1 Length Dependence of Dsub
249 Wdsub '' -1 Width Dependence of Dsub
250 Pdsub '' -1 Cross Dependence of Dsub
251 Drout '' -1 DIBL Coeff. of Output Resistance
252 Ldrout '' -1 Length Dependence of Drout
253 Wdrout '' -1 Width Dependence of Drout
254 Pdrout '' -1 Cross Dependence of Drout
255 Pclm '' -1 Channel Length Modulation Coeff.
256 Lpclm '' -1 Length Dependence of Pclm
257 Wpclm '' -1 Width Dependence of Pclm
258 Ppclm '' -1 Cross Dependence of Pclm
259 Pdiblc1 '' -1 Drain Induced Barrier Lowering Effect Coeff. 1
260 Lpdiblc1 '' -1 Length Dependence of Pdiblc1
261 Wpdiblc1 '' -1 Width Dependence of Pdiblc1
262 Ppdiblc1 '' -1 Cross Dependence of Pdiblc1
263 Pdiblc2 '' -1 Drain Induced Barrier Lowering Effect Coeff. 2
264 Lpdiblc2 '' -1 Length Dependence of Pdiblc2
265 Wpdiblc2 '' -1 Width Dependence of Pdiblc2
266 Ppdiblc2 '' -1 Cross Dependence of Pdiblc2
267 Pdiblcb '' -1 Body-Effect on Drain Induced Barrier Lowering, 1/V
268 Lpdiblcb '' -1 Length Dependence of Pdiblcb
269 Wpdiblcb '' -1 Width Dependence of Pdiblcb
270 Ppdiblcb '' -1 Cross Dependence of Pdiblcb
271 Pscbe1 '' -1 Substrate Current Body-Effect Coeff. 1, V/m
272 Lpscbe1 '' -1 Length Dependence of Pscbe1
273 Wpscbe1 '' -1 Width Dependence of Pscbe1
274 Ppscbe1 '' -1 Cross Dependence of Pscbe1
275 Pscbe2 '' -1 Substrate Current Body-Effect Coeff. 2, m/V
276 Lpscbe2 '' -1 Length Dependence of Pscbe2
277 Wpscbe2 '' -1 Width Dependence of Pscbe2
278 Ppscbe2 '' -1 Cross Dependence of Pscbe2
279 Pvag '' -1 Gate voltage dependence of Rout
280 Lpvag '' -1 Length Dependence of Pvag
281 Wpvag '' -1 Width Dependence of Pvag
282 Ppvag '' -1 Cross Dependence of Pvag
283 Ute '' -1 Mobility Temperature Exponent
284 Lute '' -1 Length Dependence of Ute
285 Wute '' -1 Width Dependence of Ute
286 Pute '' -1 Cross Dependence of Ute
287 At '' -1 Temperature Coefficient of Vsat, m/s
288 Lat '' -1 Length Dependence of At
289 Wat '' -1 Width Dependence of At
290 Pat '' -1 Cross Dependence of At
291 Ua1 '' -1 Temperature Coefficient of Ua, m/V
292 Lua1 '' -1 Length Dependence of Ua1
293 Wua1 '' -1 Width Dependence of Ua1
294 Pua1 '' -1 Cross Dependence of Ua1
295 Ub1 '' -1 Temperature Coefficient of Ub, (m/V)^2
296 Lub1 '' -1 Length Dependence of Ub1
297 Wub1 '' -1 Width Dependence of Ub1
298 Pub1 '' -1 Cross Dependence of Ub1
299 Uc1 '' -1 Temperature Coefficient of Uc, 1/V
300 Luc1 '' -1 Length Dependence of Uc1
301 Wuc1 '' -1 Width Dependence of Uc1
302 Puc1 '' -1 Cross Dependence of Uc1
303 Kt1 '' 9 Temperature Coefficient of Vth, V
304 Lkt1 '' -1 Length Dependence of Kt1
305 Wkt1 '' -1 Width Dependence of Kt1
306 Pkt1 '' -1 Cross Dependence of Kt1
307 Kt1l '' -1 Channel Length Sensitivity of Kt1, V*m
308 Lkt1l '' -1 Length Dependence of Kt1l
309 Wkt1l '' -1 Width Dependence of Kt1l
310 Pkt1l '' -1 Cross Dependence of Kt1l
311 Kt2 '' -1 Body Coefficient of Kt1
312 Lkt2 '' -1 Length Dependence of Kt2
313 Wkt2 '' -1 Width Dependence of Kt2
314 Pkt2 '' -1 Cross Dependence of Kt2
315 Prt '' -1 Temperature Coefficient of Rdsw, Ohms*um
316 Lprt '' -1 Length Dependence of Prt
317 Wprt '' -1 Width Dependence of Prt
318 Pprt '' -1 Cross Dependence of Prt
319 Cgsl '' -1 Light Doped Source-Gate Overlap Capacitance, F/m
320 Lcgsl '' -1 Length Dependence of Cgsl
321 Wcgsl '' -1 Width Dependence of Cgsl
322 Pcgsl '' -1 Cross Dependence of Cgsl
323 Cgdl '' -1 Light Doped Drain-Gate Overlap Capacitance, F/m
324 Lcgdl '' -1 Length Dependence of Cgdl
325 Wcgdl '' -1 Width Dependence of Cgdl
326 Pcgdl '' -1 Cross Dependence of Cgdl
327 Ckappa '' -1 Coeff. for Light Doped Overlap Capacitance, F/m
328 Lckappa '' -1 Length Dependence of Ckappa
329 Wckappa '' -1 Width Dependence of Ckappa
330 Pckappa '' -1 Cross Dependence of Ckappa
331 Cf '' -1 Fringing Field Capacitance, F/m
332 Lcf '' -1 Length Dependence of Cf
333 Wcf '' -1 Width Dependence of Cf
334 Pcf '' -1 Cross Dependence of Cf
335 Clc '' 5 Constant Term for the Short Channel C-V Model, m
336 Lclc '' -1 Length Dependence of Clc
337 Wclc '' -1 Width Dependence of Clc
338 Pclc '' -1 Cross Dependence of Clc
339 Cle '' -1 Exponential Term for the Short Channel C-V Model
340 Lcle '' -1 Length Dependence of Cle
341 Wcle '' -1 Width Dependence of Cle
342 Pcle '' -1 Cross Dependence of Cle
343 Dlc '' 5 Length Offset Fitting Parameter from C-V Model, m
344 Dwc '' 5 Width Offset Fitting Parameter from C-V Model, m
345 Vfbcv '' 9 Flat Band Voltage Parameter for Capmod=0 only, V
346 Lvfbcv '' -1 Length Dependence of Vfbcv
347 Wvfbcv '' -1 Width Dependence of Vfbcv
348 Pvfbcv '' -1 Cross Dependence of Vfbcv
349 Kf '' -1 Flicker Noise Coefficient
350 Af '' -1 Flicker Noise Exponent
351 Ef '' -1 Flicker Noise Frequency Exponent
352 Em '' -1 Flicker Noise Parameter, V/m
353 Noia '' -1 Noise Parameter A
354 Noib '' -1 Noise Parameter B
355 Noic '' -1 Noise Parameter C
356 Imax '' 10 Explosion current, A
357 wVsubfwd '' 9 Substrate Junction Forward Bias (warning), V
358 wBvsub '' 9 Substrate Junction Reverse Breakdown Voltage (warning), V
359 wBvg '' 9 Gate Oxide Breakdown Voltage (warning), V
360 wBvds '' 9 Drain-Source Breakdown Voltage (warning), V
361 wIdsmax '' 10 Maximum Drain-Source Current (warning), A
362 wPmax '' 8 Maximum Power Dissipation (warning), W
END_ELEMENT
BudLinearization BudLinearization 2
1 SimInstanceName '' -1 Simulation component name
2 LinearizeComponent '' -1 Component to linearize (repeatable)
END_ELEMENT
C C 7
1 C 1.0pF 4 Capacitance
2 Temp '' 12 Temperature
3 Tnom '' 12 Nominal temperature
4 TC1 '' 12 Temperature coefficient; per degree Celsius
5 TC2 '' 12 Temperature coefficient; per degree Celsius squared
6 wBV '' 9 Breakdown voltage (warning)
7 InitCond '' -1 Initial condition for transient analysis
END_ELEMENT
CAPP2 CAPP2 6
1 C 1.0pF 4 Capacitance
2 TanD 0.001 -1 dielectric loss tangent
3 Q 50.0 -1 quality factor
4 FreqQ 300.0MHz 0 reference frequency for q
5 FreqRes 500.0MHz 0 resonance frequency
6 Exp 2.0 -1 exponent for frequency dependance of q
END_ELEMENT
CAPP2_Conn CAPP2_Conn 6
1 C 1.0pF 4 Capacitance
2 TanD 0.001 -1 dielectric loss tangent
3 Q 50.0 -1 quality factor
4 FreqQ 300.0MHz 0 reference frequency for q
5 FreqRes 500.0MHz 0 resonance frequency
6 Exp 2.0 -1 exponent for frequency dependance of q
END_ELEMENT
CAPP2_Pad1 CAPP2_Pad1 9
1 C 1.0pF 4 Capacitance
2 TanD 0.001 -1 dielectric loss tangent
3 Q 50.0 -1 quality factor
4 FreqQ 300.0MHz 0 reference frequency for q
5 FreqRes 500.0MHz 0 resonance frequency
6 Exp 2.0 -1 exponent for frequency dependance of q
7 W 25.0mils 5 W
8 S 10.0mils 5 S
9 L1 50.0mils 5 L
END_ELEMENT
CAPP2_Space CAPP2_Space 7
1 C 1.0pF 4 Capacitance
2 TanD 0.001 -1 dielectric loss tangent
3 Q 50.0 -1 quality factor
4 FreqQ 300.0MHz 0 reference frequency for q
5 FreqRes 500.0MHz 0 resonance frequency
6 Exp 2.0 -1 exponent for frequency dependance of q
7 L1 50.0mils 5 L
END_ELEMENT
CAPQ CAPQ 4
1 C 1.0pF 4 Capacitance
2 Q 50.0 -1 Quality factor
3 F 100.0MHz 0 Reference frequency for q
4 Mode loss_freq -1 Loss Mode for This Device
END_ELEMENT
CCCS CCCS 5
1 G 1 -1 Complex current gain, e.g. polar(10, 45), or P(j*omega)/Q(j*omega)
2 T 1.0nsec 6 Time delay
3 R1 0ohm 1 Input Resistance
4 R2 1e100ohm 1 Output Resistance
5 F 0.0GHz 0 Frequency at which G magnitude is down 3 dB
END_ELEMENT
CCCS_Z CCCS_Z 4
1 Gain 1 -1 Constant gain term
2 Num 1 -1 Numerator coefficients of transfer function
3 Den list(1,sqrt(2),1) -1 Denominator coefficients of transfer function
4 TimeStep timestep 6 Sampling time period
END_ELEMENT
CCVS CCVS 5
1 G 1ohm 1 Complex Transresistance, e.g. polar(10 Ohm, 45), or P(j*omega)/Q(j*omega)
2 T 1.0nsec 6 Time delay
3 R1 0ohm 1 Input Resistance
4 R2 0ohm 1 Output Resistance
5 F 0.0GHz 0 Frequency at which G magnitude is down 3 dB
END_ELEMENT
CCVS_Z CCVS_Z 4
1 Gain 1 -1 Constant gain term
2 Num 1 -1 Numerator coefficients of transfer function
3 Den list(1,sqrt(2),1) -1 Denominator coefficients of transfer function
4 TimeStep timestep 6 Sampling time period
END_ELEMENT
CDRange CDRange 1
1 Function list(our_cdr=cdrange(nf2,inpwr_lin,outpwr_lin,outpwr)) -1 cdrange(noise_fig,inpwr_lin,outpwr_lin,outpwr)
END_ELEMENT
CIND CIND 2
1 N 10.0 -1 Number of turns
2 AL 0.15nH 3 Inductance index
END_ELEMENT
CIND2 CIND2 5
1 N 10.0 -1 Number of turns
2 AL 0.15nH 3 Inductance index
3 R 2.5ohm 1 Total winding resistance
4 Q 50.0 -1 Core quality factor
5 Freq 125.0MHz 0 Frequency at which Q is specified
END_ELEMENT
CLIN CLIN 4
1 Ze 100.0ohm 1 Even Mode Characteristic Impedance
2 Zo 25.0ohm 1 Odd Mode Characteristic Impedance
3 E 90deg 7 Electrical Length
4 F 1GHz 0 Reference Frequency for Electrical Length
END_ELEMENT
CLINP CLINP 8
1 Ze 100.0ohm 1 Even Mode Characteristic Impedance
2 Zo 25.0ohm 1 Odd Mode Characteristic Impedance
3 L 500.0mils 5 Physical Length
4 Ke 2.05 -1 Even Mode Effective Dielectric Constant
5 Ko 2.15 -1 Odd Mode Effective Dielectric Constant
6 Ae 0.0001 -1 Even Mode Attenuation (dB / meter)
7 Ao 0.0001 -1 Odd Mode Attenuation (dB / meter)
8 Temp '' 12 Physical temperature
END_ELEMENT
COAX COAX 8
1 Di 36.0mils 5 Diameter of Inner Conductor
2 Do 131.0mils 5 Diameter of Outer Conductor
3 L 1000.0mils 5 Length
4 Er 2.1 -1 Dielectric Constant of Dielectric Between Inner and Outer Conductors
5 TanD 0.002 -1 Dielectric loss tangent
6 Rho 1 -1 Conductor Resistivity (Relative to Copper)
7 Sigma 0 -1 Dielectric conductivity
8 Temp '' 12 Physical temperature
END_ELEMENT
COMBINE2ML COMBINE2ML 3
1 Coupled[1] '' -1 1st component to be combined
2 Coupled[2] '' -1 2nd component to be combined
3 S 5mils 5 Spacing between Coupled[1] and Coupled[2]
END_ELEMENT
COMBINE3ML COMBINE3ML 5
1 Coupled[1] '' -1 1st component to be combined
2 Coupled[2] '' -1 2nd component to be combined
3 Coupled[3] '' -1 3rd component to be combined
4 S[1] 5mils 5 Spacing between Coupled[1] and Coupled[2]
5 S[2] 5mils 5 Spacing between Coupled[2] and Coupled[3]
END_ELEMENT
COMBINE4ML COMBINE4ML 7
1 Coupled[1] '' -1 1st component to be combined
2 Coupled[2] '' -1 2nd component to be combined
3 Coupled[3] '' -1 3rd component to be combined
4 Coupled[4] '' -1 4th component to be combined
5 S[1] 5mils 5 Spacing between Coupled[1] and Coupled[2]
6 S[2] 5mils 5 Spacing between Coupled[2] and Coupled[3]
7 S[3] 5mils 5 Spacing between Coupled[3] and Coupled[4]
END_ELEMENT
COMBINE5ML COMBINE5ML 9
1 Coupled[1] '' -1 1st component to be combined
2 Coupled[2] '' -1 2nd component to be combined
3 Coupled[3] '' -1 3rd component to be combined
4 Coupled[4] '' -1 4th component to be combined
5 Coupled[5] '' -1 5th component to be combined
6 S[1] 5mils 5 Spacing between Coupled[1] and Coupled[2]
7 S[2] 5mils 5 Spacing between Coupled[2] and Coupled[3]
8 S[3] 5mils 5 Spacing between Coupled[3] and Coupled[4]
9 S[4] 5mils 5 Spacing between Coupled[4] and Coupled[5]
END_ELEMENT
CPW CPW 5
1 Subst CPWSub1 -1 Substrate instance name
2 W 25.0mils 5 Center Conductor Width
3 G 5.0mils 5 Gap (Spacing) Between Center Conductor and Ground Planes
4 L 100.0mils 5 Center Conductor Length
5 Temp '' 12 Physical temperature
END_ELEMENT
CPWCGAP CPWCGAP 5
1 Subst CPWSub1 -1 Substrate instance name
2 W 25.0mils 5 Center Conductor Width
3 G 5.0mils 5 Gap (Spacing) Between Center Conductor and Ground Planes
4 S 5.2mils 5 Length of Gap Between Ends of Center Conductors
5 Temp '' 12 Physical temperature
END_ELEMENT
CPWCPL2 CPWCPL2 6
1 Subst CPWSub1 -1 Substrate instance name
2 W 25.0mils 5 Center Conductor Width
3 G 5.0mils 5 Gap (Spacing) Between Center Conductors and Ground Planes
4 S 10.0mils 5 Gap Between the Two Center Conductors
5 L 50.0mils 5 Center Conductor Length
6 Temp '' 12 Physical temperature
END_ELEMENT
CPWCPL4 CPWCPL4 8
1 Subst CPWSub1 -1 Substrate instance name
2 W 25.0mils 5 Width of Outer Center Conductors
3 G 5.0mils 5 Gap (Spacing) Between Center Conductors and Ground Planes
4 S 5.0mils 5 Gap Between Outer and Inner Center Conductors
5 Wi 5.0mils 5 Width of Inner Center Conductors
6 Si 5.0mils 5 Gap Between Inner Center Conductors
7 L 50.0mils 5 Center Conductor Length
8 Temp '' 12 Physical temperature
END_ELEMENT
CPWEF CPWEF 5
1 Subst CPWSub1 -1 Substrate instance name
2 W 25.0mils 5 Center Conductor Width
3 G 5.0mils 5 Gap (Spacing) Between Center Conductor and Ground Planes
4 L 100.0mils 5 Center Conductor Length
5 Temp '' 12 Physical temperature
END_ELEMENT
CPWEGAP CPWEGAP 6
1 Subst CPWSub1 -1 Substrate instance name
2 W 25.0mils 5 Center Conductor Width
3 G 5.0mils 5 Gap (Spacing) Between Center Conductor and Ground Planes
4 S 5.2mils 5 Gap Between End of Center Conductor and Ground Plane
5 L 100.0mils 5 Center Conductor Length
6 Temp '' 12 Physical temperature
END_ELEMENT
CPWG CPWG 5
1 Subst CPWSub1 -1 Substrate instance name
2 W 25.0mils 5 Center Conductor Width
3 G 5.0mils 5 Gap (Spacing) Between Center Conductor and Ground Planes
4 L 100.0mils 5 Center Conductor Length
5 Temp '' 12 Physical temperature
END_ELEMENT
CPWOC CPWOC 5
1 Subst CPWSub1 -1 Substrate instance name
2 W 25.0mils 5 Center Conductor Width
3 G 5.0mils 5 Gap (Spacing) Between Center Conductor and Ground Planes
4 L 100.0mils 5 Center Conductor Length
5 Temp '' 12 Physical temperature
END_ELEMENT
CPWSC CPWSC 5
1 Subst CPWSub1 -1 Substrate instance name
2 W 25.0mils 5 Center Conductor Width
3 G 5.0mils 5 Gap (Spacing) Between Center Conductor and Ground Planes
4 L 100.0mils 5 Center Conductor Length
5 Temp '' 12 Physical temperature
END_ELEMENT
CPWSUB CPWSUB 9
1 H 25.0mils 5 Substrate thickness
2 Er 10.0 -1 Relative dielectric constant
3 Mur 1 -1 Relative permeability
4 Cond 1.0E+306 -1 Conductor conductivity
5 Hu 1.0E3m 5 Cover height
6 T 0m 5 Conductor thickness
7 TanD 0 -1 Dielectric loss tangent
8 Rough 0m 5 Conductor surface roughness
9 Cond1 smt_cond -1 (for Layout option) Layer to which cond is mapped
END_ELEMENT
CQ_Conn CQ_Conn 4
1 C 1.0pF 4 Capacitance
2 Q 50.0 -1 Quality factor
3 F 100.0MHz 0 Reference frequency for q
4 Mode loss_freq -1 Loss Mode for This Device
END_ELEMENT
CQ_Pad1 CQ_Pad1 7
1 C 1.0pF 4 Capacitance
2 Q 50.0 -1 Quality factor
3 F 100.0MHz 0 Reference frequency for q
4 Mode loss_freq -1 Loss Mode for This Device
5 W 25.0mils 5 W
6 S 10.0mils 5 S
7 L1 50.0mils 5 L
END_ELEMENT
CQ_Space CQ_Space 5
1 C 1.0pF 4 Capacitance
2 Q 50.0 -1 Quality factor
3 F 100.0MHz 0 Reference frequency for q
4 Mode loss_freq -1 Loss Mode for This Device
5 L1 50.0mils 5 L
END_ELEMENT
C_Conn C_Conn 1
1 C 1.0pF 4 Capacitance
END_ELEMENT
C_Model C_Model 11
1 C 1pF 4 Capacitance
2 Cj '' 4 Capacitance per area
3 Cjsw '' 4 Capacitance per periphery
4 Length '' 5 Length
5 Width '' 5 Width
6 Narrow '' 5 Length and width narrowing due to etching
7 Tnom '' 12 Nominal temperature
8 TC1 '' 12 Temperature coefficient; per degree Celsius
9 TC2 '' 12 Temperature coefficient; per degree Celsius squared
10 wBV '' 9 Breakdown voltage (warning)
11 AllParams '' -1 Data Access Component (DAC) Based Parameters
END_ELEMENT
C_Pad1 C_Pad1 4
1 C 1.0pF 4 Capacitance
2 W 25.0mils 5 W
3 S 10.0mils 5 S
4 L1 50.0mils 5 L
END_ELEMENT
C_Space C_Space 2
1 C 1.0pF 4 Capacitance
2 L1 50.0mils 5 L
END_ELEMENT
CarrToIM CarrToIM 1
1 Function list(our_ctm=carr_to_im(vout,{1,0},{2,-1})) -1 carr_to_im(vout,fund_freq,IM_freq)
END_ELEMENT
Chain Chain 12
1 A '' -1 Reverse voltage gain.
2 B '' 1 Reverse transresistance, Ohms
3 C '' 2 Reverse transconductance, Siemens
4 D '' -1 Reverse current gain
5 ImpNoncausalLength '' -1 Non-causal function impulse response order
6 ImpMode '' -1 Convolution mode
7 ImpMaxFreq '' 0 Maximum Frequency to which device is evaluated
8 ImpDeltaFreq '' 0 Sample spacing in frequency
9 ImpMaxOrder '' -1 Maximum allowed impulse response order
10 ImpWindow '' -1 Smoothing window
11 ImpRelTol '' -1 Relative impulse response truncation factor
12 ImpAbsTol '' -1 Absolute impulse response truncation factor
END_ELEMENT
Circulator Circulator 15
1 F1 '' 0 first frequency break point
2 F2 '' 0 second frequency break point
3 F3 '' 0 third frequency break point
4 Loss1 0.dB 13 attenuation in dB for frequencies <=F1
5 Loss2 0.dB 13 attenuation in dB for F1<frequency<=F2
6 Loss3 0.dB 13 attenuation in dB for F2>frequency<=F3
7 Loss4 0.dB 13 attenuation in dB for frequencies >F3
8 VSWR1 1. -1 VSWR at both ports for frequencies <=F1
9 VSWR2 1. -1 VSWR at both ports for F1<frequency<=F2
10 VSWR3 1. -1 VSWR at both ports for F2>frequency<=F3
11 VSWR4 1. -1 VSWR at both ports for frequencies >F3
12 Isolat 100.dB 13 isolation in dB
13 Z1 '' 1 reference impedance for port1
14 Z2 '' 1 reference impedance for port2
15 Z3 '' 1 reference impedance for port3
END_ELEMENT
ClockLFSR ClockLFSR 5
1 Vlow 0.25V 9 Lower Threshold Voltage
2 Vhigh 0.75V 9 Upper Threshold Voltage
3 Taps bin("10000100") -1 Bits Used to Generate Feedback
4 Seed bin("10101010") -1 Initial Value Loaded into Shift Register
5 Rout 1ohm 1 Output Resistance
END_ELEMENT
CoaxTee CoaxTee 3
1 Z 50ohm 1 Characteristic Impedance of Coaxial Line
2 L 10mils 5 Length of All Branches of the T-Junction
3 K 2.1 -1 Effective Dielectric Constant
END_ELEMENT
Comparator Comparator 2
1 Vlow 0.25V 9 Lower Threshold Voltage
2 Vhigh 0.75V 9 Upper Threshold Voltage
END_ELEMENT
Counter Counter 2
1 Direction 1 -1 Direction One
2 Thresh 0V 9 Thresh One
END_ELEMENT
CouplerDual CouplerDual 21
1 Coupling 10.dB 13 coupling factor in dB
2 F1 '' 0 first frequency break point
3 F2 '' 0 second frequency break point
4 F3 '' 0 third frequency break point
5 MVSWR1 1. -1 mainline VSWR for frequencies <=F1
6 MVSWR2 1. -1 mainline VSWR for F1<frequency<=F2
7 MVSWR3 1. -1 mainline VSWR for F2>frequency<=F3
8 MVSWR4 1. -1 mainline VSWR for frequencies >F3
9 CVSWR1 1. -1 coupled arm VSWR for frequencies <=F1
10 CVSWR2 1. -1 coupled arm VSWR for F1<frequency<=F2
11 CVSWR3 1. -1 coupled arm VSWR for F2>frequency<=F3
12 CVSWR4 1. -1 coupled arm VSWR for frequencies >F3
13 Loss1 0.dB 13 attenuation in dB for frequencies <=F1
14 Loss2 0.dB 13 attenuation in dB for F1<frequency<=F2
15 Loss3 0.dB 13 attenuation in dB for F2>frequency<=F3
16 Loss4 0.dB 13 attenuation in dB for frequencies >F3
17 Direct1 0.dB 13 directivity in dB for frequencies <=F1
18 Direct2 0.dB 13 directivity in dB for F1<frequency<=F2
19 Direct3 0.dB 13 directivity in dB for F2>frequency<=F3
20 Direct4 0.dB 13 directivity in dB for frequencies >F3
21 ZRef 50.ohm 1 reference impedance for all ports
END_ELEMENT
CouplerSingle CouplerSingle 21
1 Coupling 10.dB 13 coupling factor in dB
2 F1 '' 0 first frequency break point
3 F2 '' 0 second frequency break point
4 F3 '' 0 third frequency break point
5 MVSWR1 1. -1 mainline VSWR for frequencies <=F1
6 MVSWR2 1. -1 mainline VSWR for F1<frequency<=F2
7 MVSWR3 1. -1 mainline VSWR for F2>frequency<=F3
8 MVSWR4 1. -1 mainline VSWR for frequencies >F3
9 CVSWR1 1. -1 coupled arm VSWR for frequencies <=F1
10 CVSWR2 1. -1 coupled arm VSWR for F1<frequency<=F2
11 CVSWR3 1. -1 coupled arm VSWR for F2>frequency<=F3
12 CVSWR4 1. -1 coupled arm VSWR for frequencies >F3
13 Loss1 0.dB 13 attenuation in dB for frequencies <=F1
14 Loss2 0.dB 13 attenuation in dB for F1<frequency<=F2
15 Loss3 0.dB 13 attenuation in dB for F2>frequency<=F3
16 Loss4 0.dB 13 attenuation in dB for frequencies >F3
17 Direct1 0.dB 13 directivity in dB for frequencies <=F1
18 Direct2 0.dB 13 directivity in dB for F1<frequency<=F2
19 Direct3 0.dB 13 directivity in dB for F2>frequency<=F3
20 Direct4 0.dB 13 directivity in dB for frequencies >F3
21 ZRef 50.ohm 1 reference impedance for all ports
END_ELEMENT
Curtice2_Model Curtice2_Model 53
1 NFET y_n1 -1 Model Type - YES or NO
2 PFET y_n0 -1 Model Type - YES or NO
3 Idsmod 1 -1 1=CQ 2=CC 3=Statz 4=Materka 5=Tajima 6=symbolic 7=TOM 8=Modified Materka
4 Vto '' 9 Threshold voltage, V
5 Beta '' -1 Transconductance parameter, A/V^2
6 Lambda '' -1 Channel length modulation parameter, 1/V
7 Alpha '' -1 Hyperbolic tangent function parameter, 1/V
8 Tau '' 6 Transit time under gate, S
9 Tnom '' 12 Nominal ambient temperature, Celsius
10 Idstc '' -1 Ids temperature coefficient
11 Vtotc '' -1 VTO Temperature Coefficient, V/Degree C
12 Betatce '' -1 BETA Exponential Temperature Coefficient, %/Degree C
13 Rin '' 1 G-S resistance, Ohm
14 Rf '' 1 G-S effective forward-bias resistance (0. means infinity), Ohm
15 Gscap '' -1 0=none 1=linear 2=junction 3=Statz Charge 5=Statz Cap
16 Cgs '' 4 Zero-bias G-S junction cap., F
17 Cgd '' 4 Zero-bias G-D junction cap., F
18 Gdcap '' -1 0=none 1=linear 2=junction 3=Statz Charge 5=Statz Cap
19 Fc '' -1 Coefficient for forward-bias depletion cap.
20 Rd '' 1 Drain ohmic resistance, Ohm
21 Rg '' 1 Gate resistance, Ohm
22 Rs '' 1 Source ohmic resistance, Ohm
23 Ld '' 3 Drain inductance, H
24 Lg '' 3 Gate inductance, H
25 Ls '' 3 Source inductance, H
26 Cds '' 4 Drain-source cap., F
27 Rc '' 1 Used with CRF to model freq. dependent output conductance (0. means infinity), Ohm
28 Crf '' 4 Used with RC to model freq. dependent output conductance, F
29 Gsfwd '' -1 0=none 1=linear 2=diode
30 Gsrev '' -1 0=none 1=linear 2=diode
31 Gdfwd '' -1 0=none 1=linear 2=diode
32 Gdrev '' -1 0=none 1=linear 2=diode
33 R1 '' 1 Approximate breakdown resistance (0. Means Infinity), Ohm
34 R2 '' 1 Resistance relating breakdown voltage to channel, Ohm
35 Vbi '' 9 Built-in gate potential, V
36 Vbr '' 9 Gate junction reverse bias breakdown voltage (0. Means Infinity), V
37 Is '' 10 Gate junction saturation current, A
38 Ir '' 10 Gate rev saturation current, A
39 Imax '' 10 Explosion current, A
40 Xti '' -1 Saturation Current Temperature Exponent
41 Eg '' -1 Energy Gap for Temperature Effect on IS
42 N '' -1 Gate junction emission coefficient
43 Fnc '' 0 Flicker noise corner frequency
44 R '' -1 Gate noise coefficient
45 P '' -1 Drain noise coefficient
46 C '' -1 Gate-drain noise correlation coefficient.
47 Taumdl y_n0 -1 Use 2nd order Bessel polynomial to model tau effect in transient
48 wVgfwd '' 9 Gate junction forward bias (warning), V
49 wBvgs '' 9 Gate-source reverse breakdown voltage (warning), V
50 wBvgd '' 9 Gate-drain reverse breakdown voltage (warning), V
51 wBvds '' 9 Drain-source breakdown voltage (warning), V
52 wIdsmax '' 10 Maximum drain-source current (warning), A
53 wPmax '' 8 Maximum power dissipation (warning), W
END_ELEMENT
Curtice3_Model Curtice3_Model 59
1 NFET y_n1 -1 Model Type - YES or NO
2 PFET y_n0 -1 Model Type - YES or NO
3 Idsmod 2 -1 1=CQ 2=CC 3=Statz 4=Materka 5=Tajima 6=symbolic 7=TOM 8=Modified Materka
4 Vto '' 9 Value of V1 below which Ids = Ids(V1=VTO,Vds), V
5 Beta '' -2 Coefficient for pinch-off change with respect to VDS, 1/V
6 Rds0 '' 1 DC conductance at Vgs=0
7 Vout0 '' 9 Output voltage at which A0, A1, A2, A3 were evaluated, V
8 Vdsdc '' 9 Vds at `rds0 meaured bias
9 Tau '' 6 Transit time under gate, S
10 Gamma '' -1 Current saturation parameter, 1/V
11 Tnom '' 12 Nominal ambient temperature, Celsius
12 Idstc '' -1 Ids temperature coefficient
13 A0 '' -1 Cubic polynomial IDS Equation Coefficient, A
14 A1 '' -1 Cubic polynomial IDS Equation Coefficient, A/V
15 A2 '' -1 Cubic polynomial IDS Equation Coefficient, A/V^2
16 A3 '' -1 Cubic polynomial IDS Equation Coefficient, A/V^3
17 Vtotc '' -1 VTO Temperature Coefficient, V/Degree C
18 Betatce '' -1 BETA Exponential Temperature Coefficient, %/Degree C
19 Rin '' 1 Channel resistance, Ohm
20 Rf '' 1 G-S effective forward-bias resistance (0. means infinity), Ohm
21 Fc '' -1 Coefficient for forward-bias depletion cap.
22 Gscap '' -1 0=none 1=linear 2=junction 3=Statz Charge 5=Statz Cap
23 Cgs '' 4 Zero-bias G-S junction cap., F
24 Cgd '' 4 Zero-bias G-D junction cap., F
25 Gdcap '' -1 0=none 1=linear 2=junction 3=Statz Charge 5=Statz Cap
26 Rd '' 1 Drain ohmic resistance, Ohm
27 Rg '' 1 Gate resistance, Ohm
28 Rs '' 1 Source ohmic resistance, Ohm
29 Ld '' 3 Drain inductance, H
30 Lg '' 3 Gate inductance, H
31 Ls '' 3 Source inductance, H
32 Cds '' 4 Drain-source cap., F
33 Crf '' 4 Used with RDS to model freq. dependent output conductance, F
34 Rds '' 1 Additional output resistance for RF operation (0. means infinity), Ohm
35 Gsfwd '' -1 0=none 1=linear 2=diode
36 Gsrev '' -1 0=none 1=linear 2=diode
37 Gdfwd '' -1 0=none 1=linear 2=diode
38 Gdrev '' -1 0=none 1=linear 2=diode
39 R1 '' 1 Approximate breakdown resistance (0. means infinity), Ohm
40 R2 '' 1 Resistance relating breakdown voltage to channel currents, Ohm
41 Vbi '' 9 Built-in gate potential, V
42 Vbr '' 9 Gate junction reverse bias breakdown voltage (0. Means Infinity), V
43 Is '' 10 Gate junction saturation current, A
44 Ir '' 10 Gate rev saturation current, A
45 Xti '' -1 Saturation Current Temperature Exponent
46 Eg '' -1 Energy Gap for Temperature Effect on IS
47 N '' -1 Gate Junction emission coefficient
48 Imax '' 10 Explosion current, A
49 Taumdl y_n0 -1 Use 2nd order Bessel polynomial to model tau effect in transient
50 Fnc '' 0 Flicker noise corner frequency
51 R '' -1 Gate noise coefficient
52 P '' -1 Drain noise coefficient
53 C '' -1 Gate-drain noise correlation coefficient.
54 wVgfwd '' 9 Gate junction forward bias (warning), V
55 wBvgs '' 9 Gate-source reverse breakdown voltage (warning), V
56 wBvgd '' 9 Gate-drain reverse breakdown voltage (warning), V
57 wBvds '' 9 Drain-source breakdown voltage (warning), V
58 wIdsmax '' 10 Maximum drain-source current (warning), A
59 wPmax '' 8 Maximum power dissipation (warning), W
END_ELEMENT
DC DC 32
1 SweepVar '' -2 Name of variable or parameter to be swept
2 UseSweepPlan '' -1 Flag to indicate use of SweepPlan
3 SweepPlan '' -1 SweepPlan instance path name for sweep values
4 Start 1 -1 Start value
5 Stop 10 -1 Stop value
6 Step 1 -1 Step value
7 Center '' -1 Center value
8 Span '' -1 Span
9 Lin '' -1 Linear sweep
10 Dec '' -1 Number of points per decade
11 Log '' -1 Log sweep
12 Reverse '' -1 Reverse sweep
13 Pt '' -1 Single point value
14 Sort 'LINEAR START STEP' -1 Sort values
15 MaxDeltaV 0.0V 9 Max change in node voltage allowed per iteration
16 MaxIters 250 -1 Max number of iterations
17 ConvMode 0 -1 Convergence algorithm selection
18 NestLevel 2 -1 Levels of subcircuits to output
19 StatusLevel 2 -1 Degree of annotation
20 DevOpPtLevel DeviceOpNone -1 Levels of DC Operating Point Data to output
21 UseFiniteDiff no -1 Use finite differences for sensitivities
22 ArcMaxStep 0.0 -1 Maximum arc-length step
23 ArcLevelMaxStep 0.0 -1 Maximum arc-length step for source-level continuation
24 ArcMinValue '' -1 Minimum value for parameter during arclength continuation
25 ArcMaxValue '' -1 Maximum value for parameter during arclength continuation
26 MaxStepRatio 100 -1 Ratio of maximum to given number of steps
27 MaxShrinkage 1e-5 -1 Maximum step shrinkage
28 LimitingMode 0 -1 Select limiting mode
29 OutputAllSolns '' -1 Output solution at all internal steps when sweeping
30 PrintOpPoint no -1 Print operating point
31 Restart 1 -1 Do not use previous solution as initial guess
32 Other '' -1 Output string to netlist
END_ELEMENT
DC_Block DC_Block 5
1 Mode 1 -1 Mode: 0 => short, >0 => DC block, <0 => DC feed
2 C '' 4 DC block capacitance (transient only)
3 L '' 3 DC feed inductance(transient only)
4 Gain '' -1 Current gain
5 wImax '' 10 Maximum current (warning)
END_ELEMENT
DC_Feed DC_Feed 5
1 Mode -1 -1 Mode: 0 => short, >0 => DC block, <0 => DC feed
2 C '' 4 DC block capacitance (transient only)
3 L '' 3 DC feed inductance(transient only)
4 Gain '' -1 Current gain
5 wImax '' 10 Maximum current (warning)
END_ELEMENT
DCtoRF DCtoRF 1
1 Function list(our_dcrf=dc_to_rf(vout,0,vdc,0,I_Probe1.i,I_Probe2.i,{1})) -1 dc_to_rf(vPlusRF,vMinusRF,vPlusDC,vMinusDC,currentRF,currentDC,rfFreq)
END_ELEMENT
DFET DFET 30
1 Gm1 20.0uS 2 DC transconductance at Gate 1
2 T1 1.0nsec 6 Time delay of Gm1
3 F1 1.0GHz 0 -3dB frequency for Gm1
4 Cgs1 10.0pF 4 Gate 1 to source capacitance
5 Ri1 0.1ohm 1 Input resistance of gate 1
6 Cdg1 10.0pF 4 Drain to gate 1 capacitance
7 Cds1 10.0pF 4 Drain to source capacitance-gate 1
8 Rds1 500.0ohm 1 Drain to source resistance-gate 1
9 Rg1 0.1ohm 1 Gate 1 resistance
10 Lg1 10.0nH 3 Gate 1 inductance
11 Gm2 20.0uS 2 DC transconductance at Gate 2
12 T2 1.0nsec 6 Time delay of Gm2
13 F2 1.0GHz 0 -3dB frequency for Gm2
14 Cgs2 10.0pF 4 Gate 2 to source capacitance
15 Ri2 0.1ohm 1 Input resistance of gate 2
16 Cdg2 10.0pF 4 Drain to gate 2 capacitance
17 Cds2 10.0pF 4 Drain to source capacitance-gate 2
18 Rds2 500.0ohm 1 Drain to source resistance-gate 2
19 Rg2 0.1ohm 1 Gate 2 resistance
20 Lg2 10.0nH 3 Gate 2 inductance
21 Rd 25.0uohm 1 Drain resistance
22 Ld 1.0nH 3 Drain inductance
23 Rs 1.0ohm 1 Source resistance
24 Ls 10.0nH 3 Source inductance
25 Cg1s 10.0pF 4 Gate 1 to source capacitance
26 Cg12 5.0pF 4 Gate 1 to gate 2 capacitance
27 Cg1d 10.0pF 4 Gate 1 to drain capacitance
28 Cg2d 1.0pF 4 Gate 2 to drain capacitance-gate 2
29 Cds 1.0pF 4 Drain to source capacitance
30 R12 1.0ohm 1 Resistance between drain 1 and source 2
END_ELEMENT
DICAP DICAP 6
1 W 25.0mils 5 Width of metal plates and dielectric
2 L 25.0mils 5 Length of metal plates and dielectric
3 T 4.0mils 5 Thickness of dielectric
4 Er 2.50 -1 Dielectric constant
5 TanDeL 0.001 -1 Dielectric loss tagent value at 1 MHz
6 R0 0.01ohm 1 Series resistance at 1 GHz
END_ELEMENT
DILABMLC DILABMLC 6
1 C0 1.0pF 4 Nominal Capacitance
2 TanDeL 0.001 -1 Dielectric loss tagent value at 1 MHz
3 R0 0.01ohm 1 Bulk resistivity of termination at 1 MHz
4 Rt 0.01ohm 1 Termination loss resistance at 1 MHz
5 Re 0.01ohm 1 Electrode loss resistance at 1 GHz
6 Mount 1.0 -1 Mounting orientation: flat or edge
END_ELEMENT
DPDT_Static DPDT_Static 14
1 State 1 -1 =0 (nodes 1 and 2, 4 and 5 connected), =1 (node 1 and 3, 4 and 6 connected)
2 F1 '' 0 first frequency break point
3 F2 '' 0 second frequency break point
4 F3 '' 0 third frequency break point
5 Loss1 0.dB 13 attenuation in dB for frequencies <=F1
6 Loss2 0.dB 13 attenuation in dB for F1<frequency<=F2
7 Loss3 0.dB 13 attenuation in dB for F2>frequency<=F3
8 Loss4 0.dB 13 attenuation in dB for frequencies >F3
9 VSWR1 1. -1 VSWR at both ports for frequencies <=F1
10 VSWR2 1. -1 VSWR at both ports for F1<frequency<=F2
11 VSWR3 1. -1 VSWR at both ports for F2>frequency<=F3
12 VSWR4 1. -1 VSWR at both ports for frequencies >F3
13 Isolat 100.dB 13 isolation in dB
14 ZRef 50.ohm 1 reference impedance for all ports
END_ELEMENT
Deembed1 Deembed1 5
1 File '' -1 File Name
2 Type Type1 -1 File Type
3 InterpMode Mode0 -1 Interpolation Mode
4 InterpDom ID0 -1 Interpolation Domain
5 Temp '' 12 Temperature
END_ELEMENT
Deembed2 Deembed2 5
1 File '' -1 File Name
2 Type Type1 -1 File Type
3 InterpMode Mode0 -1 Interpolation Mode
4 InterpDom ID0 -1 Interpolation Domain
5 Temp '' 12 Temperature
END_ELEMENT
DevLinPhase DevLinPhase 1
1 Function list(our_dlp=dev_lin_phase(volt_gain(S21,PortZ1,PortZ2))) -1 dev_lin_phase( complex_gain_vector )
END_ELEMENT
Differentiator Differentiator 2
1 Gain 1. -1 differentiator slope
2 Rref 50.ohm 1 reference resistance for both ports
END_ELEMENT
Diode Diode 5
1 Model DIODEM1 -1 Model instance name
2 Area '' -1 Scaling Factor
3 Region '' -1 DC operating region, 0=off, 1=on
4 Temp '' 12 Device operating temperature
5 Mode simtype_nonlin -1 Simulation Mode for This Device
END_ELEMENT
Diode_Model Diode_Model 25
1 Is '' 10 Saturation Current, A
2 Rs '' 1 Ohmic Resistance, Ohm
3 N '' -1 Emission Coefficient
4 Tt '' 6 Transit Time, S
5 Cjo '' 4 Zero-bias Junction Cap., F
6 Vj '' 9 Junction Potential, V
7 M '' -1 Grading Coefficient
8 Eg '' -1 Energy Gap, eV
9 Imax '' 10 Explosion current, A
10 Xti '' -1 Saturation-current Temperature Exponent
11 Kf '' -1 Flicker Noise Coefficient
12 Af '' -1 Flicker Noise Exponent
13 Fc '' -1 Forward-bias Depletion Cap. Coefficient
14 Bv '' 9 Reverse Breakdown Voltage (0. Means Infinity), V
15 Ibv '' 10 Current At Reverse Breakdown Voltage, A
16 Isr '' 10 Recombination Current Parameter, A
17 Nr '' -1 Emission Coefficient For ISR
18 Ikf '' 10 High-Injection Knee Current (0. Means Infinity), A
19 Nbv '' -1 Reverse Breakdown Ideality Factor
20 Ibvl '' 10 Low-Level Reverse Breakdown Knee Current, A
21 Nbvl '' -1 Low-Level Reverse Breakdown Ideality Factor
22 Tnom '' 12 Nominal ambient temperature, Celsius
23 Ffe '' -1 Flicker noise frequency exponent
24 wBv '' 9 Diode reverse breakdown voltage (warning), V
25 wPmax '' 8 Maximum Power Dissipation (warning), W
END_ELEMENT
DivideByN DivideByN 2
1 FnomIn 1.0KHz 0 Nominal Input Frequency
2 N 11 -1 Divide Number
END_ELEMENT
EE_BJT2_Model EE_BJT2_Model 41
1 Type One -1 Model Type - 1 or 2
2 Nf '' -1 Forward Current Emission Coefficient
3 Ne '' -1 B-E Leakage Emission Coefficient
4 Nbf '' -1 EEBJT2 reverse base ideality factor
5 Vaf '' 9 Forward Early Voltage (0. Means Infinity), V
6 Ise '' 10 B-E Leakage Saturation Current, A
7 Tf '' 6 Ideal Forward Transit Time, S
8 Ikf '' 10 Corner for Forward Beta High Current Roll-off (0. Means Infinity), A
9 Xtf '' -1 Coefficient of Bias Dependence for TF
10 Vtf '' 9 Voltage Dependence of TF on B-C Voltage (0. Means Infinity), V
11 Itf '' 10 Parameter for High Current Effect on TF, A
12 Nbr '' 10 EEBJT2 reverse base ideality factor
13 Nr '' -1 Reverse Current Emission Coefficient
14 Nc '' -1 B-C Leakage Emission Coefficient
15 Isc '' 10 B-C Leakage Saturation Current, A
16 Ikr '' 10 Corner for Reverse Beta High Current Roll-off (0. Means Infinity), A
17 Var '' 9 Reverse Early Voltage (0. Means Infinity), V
18 Tr '' 6 Ideal Reverse Transit Time, S
19 Isf '' 10 Forward saturation current for EEBJT2, A
20 Ibif '' 10 Fwd base saturation current for EEBJT2, A
21 Isr '' 10 Reverse saturation current for EEBJT2, A
22 Ibir '' 10 Rev base saturation current for EEBJT2, A
23 Tamb '' 12 EEBJT2 extraction temperature, Celsius
24 Cje '' 4 B-E Zero-bias Depletion Cap., F
25 Vje '' 9 B-E Junction Built-in Potential, V
26 Mje '' -1 B-E Junction Exponential Factor
27 Cjc '' 4 B-C Zero-bias Depletion Cap., F
28 Vjc '' 9 B-C Junction Built-in Potential, V
29 Mjc '' -1 B-C Junction Exponential Factor
30 Rb '' 1 Zero-bias Base Resistance, Ohm
31 Re '' 1 Emitter Resistance, Ohm
32 Rc '' 1 Collector Resistance, Ohm
33 Fc '' -1 Forward-bias Depletion Cap. Coefficient
34 wVsubfwd '' 9 Substrate Junction Forward Bias (warning), V
35 wBvsub '' 9 Substrate Junction Reverse Breakdown Voltage (warning), V
36 wBvbe '' 9 Base-Emitter Reverse Breakdown Voltage (warning), V
37 wBvbc '' 9 Base-Collector Reverse Breakdown Voltage (warning), V
38 wVbcfwd '' 9 Base-Collector Forward Bias (warning), V
39 wIbmax '' 10 Maximum Base Current (warning), A
40 wIcmax '' 10 Maximum Collector Current (warning), A
41 wPmax '' 8 Maximum Power Dissipation (warning), W
END_ELEMENT
EE_FET3 EE_FET3 3
1 Model EEFET3M1 -1 Model instance name
2 Ugw '' 5 Unit gate width of device
3 N '' -1 Number of Gate fingers
END_ELEMENT
EE_FET3_Model EE_FET3_Model 61
1 Vto '' 9 Zero-bias threshold parameter
2 Gamma '' -1 Transconductance parameter, 1/V
3 Vgo '' 9 Gate-source voltage where transconductance is a maximum, V
4 Vdelt '' 9 Parameter which controls linearization point, V
5 Vch '' 9 Gate-source voltage where Gamma no longer effects I-V,V
6 Gmmax '' 3 Peak transconductance parameter, S
7 Vdso '' 9 Drain voltage where Vo dependence is nominal, V
8 Vsat '' 9 Drain-source current saturation parameter, V
9 Kapa '' 2 Output conductance parameter, S
10 Peff '' -1 Channel to backside self-heating parameter, W
11 Vtso '' 9 Subthreshold onset voltage, V
12 Is '' 10 Gate junction reverse saturation current, A
13 N '' -1 Junction ideality factor, demensionless
14 Ris '' 1 Source end channel resistance, Ohms
15 Rid '' 1 Drain end channel resistance, Ohms
16 Tau '' 6 Gate transit time delay, T
17 Cdso '' 4 Drain source inter-electrode capacitance, F
18 Rdb '' 1 Dispersion source output impedence, Ohms
19 Cbs '' 4 Trapping-state capacitance, C
20 Vtoac '' 9 Zero-bias threshold parameter, V
21 Gammaac '' -1 Transconductance parameter (AC), 1/V
22 Vdeltac '' 9 Parameter which controls linearization point (AC), V
23 Gmmaxac '' -1 Peak transconductance parameter (AC), S
24 Kapaac '' 2 Output conductance parameter (AC), S
25 Peffac '' -1 Channel to backside self-heating parameter (AC), W
26 Vtsoac '' 9 Subthreshold onset voltage(AC), V
27 Gdbm '' 4 Additional d-b branch conductance at Vds = VDSM,
28 Kdb '' -1 Dependence of d-b branch conductance with Vds
29 Vdsm '' 9 Voltage where D-B branch conductance becomes constant
30 C11o '' 4 Maximum input capacitance for VDS=VDSO>DELTDS, F
31 C11th '' 4 Minimum (threshold) input capacitance for Vds=VDSO, F
32 Vinfl '' 9 Inflection point in C11-Vgs characteristic, V
33 Deltgs '' 9 C11TH to C11O transition voltage, V
34 Deltds '' 9 Linear to saturation region transition parameter, V
35 Lambda '' -1 C11-Vds characteristic slope parameter, 1/V
36 C12sat '' 4 Input transcapacitance for Vgs=VINFL and Vds>DELTDS, F
37 Cgdsat '' 4 Gate drain capacitance for Vds>DELTDS, F
38 Kbk '' -1 Breakdown current coefficient at threshold
39 Vbr '' 9 Breakdown onset voltage, V
40 Nbr '' -1 Breakdown current exponent parameter
41 Idsoc '' 10 Open channel (maximum) value of Ids, A
42 Rd '' 1 Drain contact resistance, Ohms
43 Rs '' 1 Source contact resistance, Ohms
44 Rg '' 1 Gate metalization resistance, Ohms
45 Ugw '' 5 Unit gate width of device
46 Ngf '' -1 Number of device gate fingers
47 Vco '' 9 Voltage where transconductance compression begins, V
48 Vba '' 9 Transconductance compression tail-off parameter, V
49 Vbc '' 9 Transconductance roll-off to tail-off voltage, V
50 Mu '' -1 Vo dependent transconductance compression parameter
51 Deltgm '' -1 Slope of transconductance compression characteristic
52 Deltgmac '' -1 Slope of transconductance compression characteristic (AC)
53 Alpha '' 9 Transconductance saturation to compression transition, V
54 Kmod '' -1 Library model numbe
55 Kver '' -1 Version number
56 wVgfwd '' 9 Gate junction forward bias (warning), V
57 wBvgs '' 9 Gate-source reverse breakdown voltage (warning), V
58 wBvgd '' 9 Gate-drain reverse breakdown voltage (warning), V
59 wBvds '' 9 Drain-source breakdown voltage (warning), V
60 wIdsmax '' 10 Maximum drain-source current (warning), A
61 wPmax '' 8 Maximum power dissipation (warning), W
END_ELEMENT
EE_HEMT1 EE_HEMT1 3
1 Model EEHEMTM1 -1 Model instance name
2 Ugw '' 5 Unit gate width of device
3 N '' -1 Number of Gate fingers
END_ELEMENT
EE_HEMT1_Model EE_HEMT1_Model 61
1 Vto '' 9 Zero-bias threshold parameter
2 Gamma '' -1 Transconductance parameter, 1/V
3 Vgo '' 9 Gate-source voltage where transconductance is a maximum, V
4 Vdelt '' 9 Parameter which controls linearization point, V
5 Vch '' 9 Gate-source voltage where Gamma no longer effects I-V,V
6 Gmmax '' 3 Peak transconductance parameter, S
7 Vdso '' 9 Drain voltage where Vo dependence is nominal, V
8 Vsat '' 9 Drain-source current saturation parameter, V
9 Kapa '' 2 Output conductance parameter, S
10 Peff '' -1 Channel to backside self-heating parameter, W
11 Vtso '' 9 Subthreshold onset voltage, V
12 Is '' 10 Gate junction reverse saturation current, A
13 N '' -1 Junction ideality factor, demensionless
14 Ris '' 1 Source end channel resistance, Ohms
15 Rid '' 1 Drain end channel resistance, Ohms
16 Tau '' 6 Gate transit time delay, T
17 Cdso '' 4 Drain source inter-electrode capacitance, F
18 Rdb '' 1 Dispersion source output impedence, Ohms
19 Cbs '' 4 Trapping-state capacitance, C
20 Vtoac '' 9 Zero-bias threshold parameter, V
21 Gammaac '' -1 Transconductance parameter (AC), 1/V
22 Vdeltac '' 9 Parameter which controls linearization point (AC), V
23 Gmmaxac '' -1 Peak transconductance parameter (AC), S
24 Kapaac '' 2 Output conductance parameter (AC), S
25 Peffac '' -1 Channel to backside self-heating parameter (AC), W
26 Vtsoac '' 9 Subthreshold onset voltage(AC), V
27 Gdbm '' 4 Additional d-b branch conductance at Vds = VDSM,
28 Kdb '' -1 Dependence of d-b branch conductance with Vds
29 Vdsm '' 9 Voltage where D-B branch conductance becomes constant
30 C11o '' 4 Maximum input capacitance for VDS=VDSO>DELTDS, F
31 C11th '' 4 Minimum (threshold) input capacitance for Vds=VDSO, F
32 Vinfl '' 9 Inflection point in C11-Vgs characteristic, V
33 Deltgs '' 9 C11TH to C11O transition voltage, V
34 Deltds '' 9 Linear to saturation region transition parameter, V
35 Lambda '' -1 C11-Vds characteristic slope parameter, 1/V
36 C12sat '' 4 Input transcapacitance for Vgs=VINFL and Vds>DELTDS, F
37 Cgdsat '' 4 Gate drain capacitance for Vds>DELTDS, F
38 Kbk '' -1 Breakdown current coefficient at threshold
39 Vbr '' 9 Breakdown onset voltage, V
40 Nbr '' -1 Breakdown current exponent parameter
41 Idsoc '' 10 Open channel (maximum) value of Ids, A
42 Rd '' 1 Drain contact resistance, Ohms
43 Rs '' 1 Source contact resistance, Ohms
44 Rg '' 1 Gate metalization resistance, Ohms
45 Ugw '' 5 Unit gate width of device
46 Ngf '' -1 Number of device gate fingers
47 Vco '' 9 Voltage where transconductance compression begins, V
48 Vba '' 9 Transconductance compression tail-off parameter, V
49 Vbc '' 9 Transconductance roll-off to tail-off voltage, V
50 Mu '' -1 Vo dependent transconductance compression parameter
51 Deltgm '' -1 Slope of transconductance compression characteristic
52 Deltgmac '' -1 Slope of transconductance compression characteristic (AC)
53 Alpha '' 9 Transconductance saturation to compression transition, V
54 Kmod '' -1 Library model numbe
55 Kver '' -1 Version number
56 wVgfwd '' 9 Gate junction forward bias (warning), V
57 wBvgs '' 9 Gate-source reverse breakdown voltage (warning), V
58 wBvgd '' 9 Gate-drain reverse breakdown voltage (warning), V
59 wBvds '' 9 Drain-source breakdown voltage (warning), V
60 wIdsmax '' 10 Maximum drain-source current (warning), A
61 wPmax '' 8 Maximum power dissipation (warning), W
END_ELEMENT
EE_MOS1 EE_MOS1 2
1 Model EEMOSM1 -1 Model instance name
2 Temp '' 12 Device operating temperature
END_ELEMENT
EE_MOS1P EE_MOS1P 2
1 Model EEMOS1M1 -1 Model instance name
2 Temp '' 12 Device operating temperature
END_ELEMENT
EE_MOS1_Model EE_MOS1_Model 43
1 Is '' 10 Substrate diode reverse saturation current, A
2 N '' -1 Substrate diode ideality factor, dimensionless
3 F '' -1 Zero-bias substrate diode depletion capacitance, F
4 Vbi '' 9 Substrate diode built-in potential, V
5 Mj '' -1 Junction grading coefficient, dimensionless
6 Fc '' -1 Substrate depletion capacitance linearization point, dimensionless
7 Vbr '' 9 Breakdown onset voltage, V
8 Kbo '' -1 Breakdown current coefficient, dimensionless
9 Nbr '' -1 Breakdown current exponent parameter
10 Vinfl '' 9 Inflection point in Cgs-Vgs characteristic, V
11 Deltds '' 9 Capacitance forward to reverse mode transition parameter, V
12 Deltgs '' 9 Cgsth to Cgso transition voltage, V
13 Cgsmax '' 4 Maximum value of Cgs, F
14 Vgo '' 9 Gate-source voltage where transconductance is a maximum, V
15 Vto '' 9 Zero-bias threshold parameter
16 Gamma '' -1 Drain-source dependent threshold parameter, 1/V
17 Gmmax '' 3 Peak transconductance parameter, S
18 Delta '' 9 Transconductance tail-off rate parameter, V
19 Vbreak '' 9 Voltage where transconductance tail-off begins, V
20 Lambda '' -1 Output conductance parameter, 1/V
21 Vsatm '' 9 Maximum value of saturation voltage, V
22 Vgm '' 9 Gate-source volatge where saturation voltage is VSATM, V
23 Rdb '' 1 Dispersion source output impedence, Ohms
24 Cbs '' 4 Dispersion source capacitance
25 Gmmaxac '' 3 AC value of GMMAX, S
26 Deltac '' 9 AC value of DELT, V
27 Vbreakac '' 9 AC value of VBREAK, V
28 Vgoac '' 9 AC value of VGO, V
29 Lambdaac '' -1 AC value of LAMBDA, 1/V
30 Vsatmac '' 9 AC value of VSATM, V
31 Vgmac '' 9 AC value of VGM, V
32 Gdbm '' -1 Additional d-b branch conductance at Vds=VDSM
33 Kdb '' -1 Parameter which controls Vds dependence of D-B branch conductance
34 Vdsm '' 9 Voltage where D-B branch conductance becomes constant
35 Rd '' 1 Drain contact resistance, Ohms
36 Rs '' 1 Source contact resistance, Ohms
37 Rg '' 1 Gate metalization resistance, Ohms
38 Ris '' 1 Source end channel resistance, Ohms
39 Rid '' 1 Drain end channel resistance, Ohms
40 wBvg '' 9 Gate Oxide Breakdown Voltage (warning), V
41 wBvds '' 9 Drain-Source Breakdown Voltage (warning), V
42 wIdsmax '' 10 Maximum Drain-Source Current (warning), A
43 wPmax '' 8 Maximum Power Dissipation (warning), W
END_ELEMENT
EE_TOM EE_TOM 5
1 Model EETOM1 -1 Model instance name
2 W '' 5 New Unit Gate Width
3 N '' -1 New Number of Gate Fingers
4 Temp '' 12 Operating Temperature
5 Mode simtype_nonlin -1 Simulation Mode for This Device
END_ELEMENT
Envelope Envelope 48
1 MaxOrder 4 -1 Maximum combined order to be considered
2 Freq 1.0GHz 0 Frequency of fundamental
3 Order 3 -1 Maximum order of fundamental to be considered
4 NestLevel 2 -1 Levels of subcircuits to output
5 StatusLevel 3 -1 Degree of annotation
6 FundOversample 2 -1 Oversampling ratio for FFT
7 Oversample '' -1 Oversampling ratio for FFT (repeated)
8 PackFFT '' -1 Pack FFT in multi-tone analysis
9 MaxIters 10 -1 Max number of iterations
10 GuardThresh '' -1 Guard threshold
11 SamanskiiConstant 2 -1 Samanskii constant
12 Restart No -1 Do not use last solution as initial guess
13 ArcLevelMaxStep 0.0 -1 Maximum arc-length step for source-level continuation
14 MaxStepRatio 100 -1 Ratio of maximum to given number of steps
15 MaxShrinkage 1.0e-5 -1 Maximum step shrinkage
16 OutputAllSolns '' -1 Output spectra at all computed steps when sweeping
17 ArcMaxStep 0.0 -1 Maximum arc-length step
18 ArcMinValue '' -1 Minimum value for parameter during arclength continuation
19 ArcMaxValue '' -1 Maximum value for parameter during arclength continuation
20 UseGear '' -1 Use Gears method for envelope integration
21 EnvIntegOrder 1 -1 Numerical integration order for envelope
22 SweepOffset '' 6 Sweep variable offset
23 EnvNoise '' -1 Add noise sources during envelope simulation
24 EnvBandwidth 1 -1 Envelope relative bandwidth (default = 1)
25 EnvRelTrunc '' -1 Relative truncation factor for Envelope fitting
26 EnvAbsTrunc '' -1 Absolute truncation factor for Envelope fitting
27 EnvWarnPoorFit '' -1 Enables warning of poor envelope fits
28 EnvUsePoorFit '' -1 Use poor fits instead of constant values
29 EnvSkipDC_Fit '' -1 Dont do pole/zero fittting for baseband
30 ResetOsc '' -1 Reset initial oscillator envelope solution
31 OscMode '' -1 Flag to indicate oscillator mode
32 OscPortName '' -1 Oscillator port used to break feedback loop
33 IgnoreOscErrors '' -1 Continue sweep even after oscillation convergence error
34 SweepVar time -1 Name of variable or parameter to be swept
35 UseSweepPlan '' -1 Flag to indicate use of SweepPlan
36 SweepPlan '' -1 SweepPlan instance path name for sweep values
37 Start 0nsec 6 Start value
38 Stop 100nsec 6 Stop value
39 Step 1nsec 6 Step value
40 Center '' 6 Center value
41 Span '' 6 Span
42 Lin '' -1 Linear sweep
43 Dec '' -1 Number of points per decade
44 Log '' -1 Log sweep
45 Reverse '' -1 Reverse sweep
46 Pt '' -1 Single point
47 Sort 'LINEAR START STEP' -1 Sort values
48 Other '' -1 Output string to netlist
END_ELEMENT
FDD10P FDD10P 1
1 Equation list(prm("FddCurrent",1,1,)) -2 FDD Equation Defining A Constitutive Relationship
END_ELEMENT
FDD1P FDD1P 1
1 Equation list(prm("FddCurrent",1,1,)) -2 FDD Equation Defining A Constitutive Relationship
END_ELEMENT
FDD2P FDD2P 1
1 Equation list(prm("FddCurrent",1,1,)) -2 FDD Equation Defining A Constitutive Relationship
END_ELEMENT
FDD3P FDD3P 1
1 Equation list(prm("FddCurrent",1,1,)) -2 FDD Equation Defining A Constitutive Relationship
END_ELEMENT
FDD4P FDD4P 1
1 Equation list(prm("FddCurrent",1,1,)) -2 FDD Equation Defining A Constitutive Relationship
END_ELEMENT
FDD5P FDD5P 1
1 Equation list(prm("FddCurrent",1,1,)) -2 FDD Equation Defining A Constitutive Relationship
END_ELEMENT
FDD6P FDD6P 1
1 Equation list(prm("FddCurrent",1,1,)) -2 FDD Equation Defining A Constitutive Relationship
END_ELEMENT
FDD7P FDD7P 1
1 Equation list(prm("FddCurrent",1,1,)) -2 FDD Equation Defining A Constitutive Relationship
END_ELEMENT
FDD8P FDD8P 1
1 Equation list(prm("FddCurrent",1,1,)) -2 FDD Equation Defining A Constitutive Relationship
END_ELEMENT
FDD9P FDD9P 1
1 Equation list(prm("FddCurrent",1,1,)) -2 FDD Equation Defining A Constitutive Relationship
END_ELEMENT
FET FET 10
1 G 20.0uS 2 Magnitude of transconductance at DC
2 T 1.0nsec 6 Time delay associated with transconductance
3 F 1.0GHz 0 Transconductance roll-off frequency
4 Cgs 10.0pF 4 Gate to source capacitance
5 Ggs 1.0uS 2 Gate to source conductance
6 Ri 0.1ohm 1 Channel resistance
7 Cdg 10.0pF 4 Drain to gate capacitance
8 Cdc 10.0pF 4 Dipole layer capacitance
9 Cds 10.0pF 4 Drain to source capacitance
10 Rds 500.0ohm 1 Drain to source resistance
END_ELEMENT
FET2 FET2 11
1 G 20.0uS 2 Magnitude of transconductance at DC
2 T 1.0nsec 6 Time delay associated with transconductance
3 F 1.0GHz 0 Transconductance roll-off frequency
4 Cgs 10.0pF 4 Gate to source capacitance
5 Ggs 1.0uS 2 Gate to source conductance
6 Ri 0.1ohm 1 Channel resistance
7 Cdg 10.0pF 4 Drain to gate capacitance
8 Cdc 10.0pF 4 Dipole layer capacitance
9 Cds 10.0pF 4 Drain to source capacitance
10 Rds 500.0ohm 1 Drain to source resistance
11 Rs 0.1ohm 1 Source resistance
END_ELEMENT
FETN1 FETN1 8
1 G 0.03S 2 Transconductance
2 T 3.0psec 6 Time delay associated with transconductance
3 Cgs 0.40pF 4 Gate to source capacitance
4 Ri 3.0ohm 1 Channel resistance
5 Rds 300.0ohm 1 Drain to source resistance
6 P 0.8 -1 Noise parameter P
7 R 1.2 -1 Noise parameter R
8 C 0.90 -1 Noise parameter C
END_ELEMENT
FETN2 FETN2 9
1 G 0.03S 2 Transconductance
2 T 3.0psec 6 Time delay associated with transconductance
3 Cgs 0.40pF 4 Gate to source capacitance
4 Ri 3.0ohm 1 Channel resistance
5 Rs 3.70ohm 1 Source resistance
6 Rg 0.80ohm 1 Gate resistance
7 Kr 0.050 -1 Noise parameter Kr
8 Kc 1.4 -1 Noise parameter Kc
9 Kg 1.50 -1 Noise parameter Kg
END_ELEMENT
FETN3 FETN3 10
1 G 0.03S 2 Transconductance
2 T 3.0psec 6 Time delay associated with transconductance
3 Cgs 0.40pF 4 Gate to source capacitance
4 Ri 3.0ohm 1 Channel resistance
5 Rs 3.70ohm 1 Source resistance
6 Rg 0.80ohm 1 Gate resistance
7 K1 0.020 -1 Noise parameter K1
8 K2 0.800 -1 Noise parameter K2
9 K3 2.2 -1 Noise parameter K3
10 K4 160.0 -1 Noise parameter K4
END_ELEMENT
FETN4 FETN4 8
1 G 0.03S 2 Transconductance
2 T 3.0psec 6 Time delay associated with transconductance
3 Cgs 0.40pF 4 Gate to source capacitance
4 Ri 3.0ohm 1 Channel resistance
5 Rs 3.70ohm 1 Source resistance
6 Rg 0.80ohm 1 Gate resistance
7 NFMin 2.0 -1 Minimum noise figure in dB
8 FRef 10.0GHz 0 Reference frequency at which NFMin is measured
END_ELEMENT
FETN4a FETN4a 7
1 G 0.03S 2 Transconductance
2 T 3.0psec 6 Time delay associated with transconductance
3 Cgs 0.40pF 4 Gate to source capacitance
4 Ri 3.0ohm 1 Channel resistance
5 Rs 3.70ohm 1 Source resistance
6 Rg 0.80ohm 1 Gate resistance
7 K 1.0 -1 Noise parameter K
END_ELEMENT
FETN5 FETN5 8
1 G 0.03S 2 Transconductance
2 T 3.0psec 6 Time delay associated with transconductance
3 Cgs 0.40pF 4 Gate to source capacitance
4 Ri 3.0ohm 1 Channel resistance
5 Rds 450.0ohm 1 Drain to source resistance
6 Rs 3.70ohm 1 Source resistance
7 Rg 0.80ohm 1 Gate resistance
8 Sio 710.0 -1 Noise parameter Sio
END_ELEMENT
FM_DemodTuned FM_DemodTuned 3
1 Sensitivity 1KHz 0 Demodulation Sensitivity, in Hz/Volt
2 Fnom 1GHz 0 Nominal Input Frequency
3 Rout 50ohm 1 Output Resistance
END_ELEMENT
FM_ModTuned FM_ModTuned 3
1 Sensitivity 1KHz 0 Modulation Sensitivity, Hz/Volt
2 Fnom 1GHz 0 Nominal Input Frequency
3 Rout 50ohm 1 Output Resistance
END_ELEMENT
FORMATA FORMATA 0
END_ELEMENT
FORMATB FORMATB 0
END_ELEMENT
FORMATC FORMATC 0
END_ELEMENT
FORMATD FORMATD 0
END_ELEMENT
FORMATE FORMATE 0
END_ELEMENT
FSUB FSUB 5
1 Er 2.2 -1 Relative dielectric constant
2 Fdw 62.5mils 5 Thickness of slab
3 Fa 900.0mils 5 Inside width of enclosure
4 Fb 400.0mils 5 Inside height of enclosure
5 Cond 1.0E+306 -1 Conductor conductivity
END_ELEMENT
FreqMult FreqMult 14
1 S11 0 -1 Port1 reflection coefficient
2 S22 0 -1 Port2 reflection coefficient
3 G1 (-3.) 13 Power gain of input tone, in dB
4 G2 '' 13 Power gain of second harmonic, in dB
5 G3 '' 13 Power gain of third harmonic, in dB
6 G4 '' 13 Power gain of fourth harmonic, in dB
7 G5 '' 13 Power gain of fifth harmonic, in dB
8 G6 '' 13 Power gain of sixth harmonic, in dB
9 G7 '' 13 Power gain of seventh harmonic, in dB
10 G8 '' 13 Power gain of eighth harmonic, in dB
11 G9 '' 13 Power gain of ninth harmonic, in dB
12 PMin -40. -1 Minimum input power for specified conversion in dBm
13 Z1 50.ohm 1 reference impedance for port1
14 Z2 50.ohm 1 reference impedance for port2
END_ELEMENT
GaAsFET GaAsFET 4
1 Model MESFETM1 -1 Model instance name
2 Area '' -1 Scaling Factor
3 Temp '' 12 Device operating temperature
4 Mode simtype_nonlin -1 Simulation Mode for This Device
END_ELEMENT
GaCircle GaCircle 1
1 Function list(our_gacir=ga_circle(S,2,51)) -1 ga_circle(2x2 S_matrix,gain,num_of_pts)
END_ELEMENT
GainComp GainComp 1
1 Function list(our_gcomp=gain_comp(S21[::,0])) -1 gain_comp(complex_transmission_coeff)
END_ELEMENT
GainRipple GainRipple 1
1 Function list(our_gr=ripple(mag(S21))) -1 ripple( gain_vector )
END_ELEMENT
GlCircle GlCircle 1
1 Function list(our_glcir=gl_circle(S,2,51)) -1 gl_circle(2x2 S_matrix,gain,num_of_pts)
END_ELEMENT
Goal Goal 8
1 Expr '' -1 Goal expression
2 SimInstanceName '' -1 Simulation component name
3 Min '' -1 Minimum acceptable spec value
4 Max '' -1 Maximum acceptable spec value
5 Weight '' -1 Weighting used in error function calculation
6 RangeVar '' -1 Name of range variable
7 RangeMin '' -1 Minimum acceptable value for range variable
8 RangeMax '' -1 Maximum acceptable value for range variable
END_ELEMENT
GpCircle GpCircle 1
1 Function list(our_gpcir=gp_circle(S,2,51)) -1 gp_circle(2x2 S_matrix,gain,num_of_pts)
END_ELEMENT
GrpDelayRipple GrpDelayRipple 1
1 Function list(our_gd_rpl=ripple(S.delay(2,1))) -1 ripple( group_delay_vector )
END_ELEMENT
GsCircle GsCircle 1
1 Function list(our_gscir=gs_circle(S,2,51)) -1 gs_circle(2x2 S_matrix,gain,num_of_pts)
END_ELEMENT
Gyrator Gyrator 1
1 Ratio 1 -1 gyrator ratio
END_ELEMENT
HPDiode HPDiode 2
1 Model HPDIODEM1 -1 Model instance name
2 Area '' 5 Junction
END_ELEMENT
HPF_Bessel HPF_Bessel 11
1 Fpass 1GHz 0 Passband Edge Frequency
2 Apass 3dB 13 Attenuation at Passband Edge, in dB
3 GDpass 0.9 -1 Group Delay Rolloff at Passband Edge, 0 < GDpass < 1
4 StopType OPEN -2 Input is open or short for stopband
5 MaxRej '' 13 Maximum Rejection Level , in dB
6 N 0 -1 Filter Order (if N > 0, it overwrites GDpass)
7 IL 0dB 13 Passband Insertion Loss, in dB
8 Qu 1E308 -1 Unloaded Quality Factor
9 Z1 50ohm 1 Input Port Reference Impedance
10 Z2 50ohm 1 Output Port Reference Impedance
11 Temp '' 12 Temperature in Degree Celsius
END_ELEMENT
HPF_Butterworth HPF_Butterworth 12
1 Fpass 1GHz 0 Passband Edge Frequency
2 Apass 3dB 13 Attenuation at Passband Edge, in dB
3 Fstop 0.8GHz 0 Stopband Edge Frequency
4 Astop 20dB 13 Attenuation at Stopband Edge, in dB
5 StopType OPEN -2 Input is open or short for stopband
6 MaxRej '' 13 Maximum Rejection Level , in dB
7 N 0 -1 Filter Order (if N > 0, it overwrites Fstop and Astop)
8 IL 0dB 13 Passband Insertion Loss, in dB
9 Qu 1E308 -1 Unloaded Quality Factor
10 Z1 50ohm 1 Input Port Reference Impedance
11 Z2 50ohm 1 Output Port Reference Impedance
12 Temp '' 12 Temperature in Degree Celsius
END_ELEMENT
HPF_Chebyshev HPF_Chebyshev 13
1 Fpass 1GHz 0 Passband Edge Frequency
2 Apass 1dB 13 Attenuation at Passband Edge, in dB
3 Ripple 1dB 13 Passband Ripple, in dB
4 Fstop 0.8GHz 0 Stopband Edge Frequency
5 Astop 20dB 13 Attenuation at Stopband Edge, in dB
6 StopType OPEN -2 Input is open or short for stopband
7 MaxRej '' 13 Maximum Rejection Level , in dB
8 N 0 -1 Filter Order (if N > 0, it overwrites Fstop and Astop)
9 IL 0dB 13 Passband Insertion Loss, in dB
10 Qu 1E308 -1 Unloaded Quality Factor
11 Z1 50ohm 1 Input Port Reference Impedance
12 Z2 50ohm 1 Output Port Reference Impedance
13 Temp '' 12 Temperature in Degree Celsius
END_ELEMENT
HPF_Elliptic HPF_Elliptic 12
1 Fpass 1GHz 0 Passband Edge Frequency
2 Ripple 1dB 13 Passband Ripple, in dB
3 Fstop 0.8GHz 0 Stopband Edge Frequency
4 Astop 20dB 13 Attenuation at Stopband Edge, in dB
5 StopType OPEN -2 Input is open or short for stopband
6 MaxRej '' 13 Maximum Rejection Level , in dB
7 N 0 -1 Filter Order (if N > 0, it overwrites Fstop and Astop)
8 IL 0dB 13 Passband Insertion Loss, in dB
9 Qu 1E308 -1 Unloaded Quality Factor
10 Z1 50ohm 1 Input Port Reference Impedance
11 Z2 50ohm 1 Output Port Reference Impedance
12 Temp '' 12 Temperature in Degree Celsius
END_ELEMENT
HPF_Gaussian HPF_Gaussian 11
1 Fpass 1GHz 0 Passband Edge Frequency
2 Apass 3dB 13 Attenuation at Passband Edge, in dB
3 GDpass 0.9 -1 Group Delay Rolloff at Passband Edge, 0 < GDpass < 1
4 StopType OPEN -2 Input is open or short for stopband
5 MaxRej '' 13 Maximum Rejection Level , in dB
6 N 0 -1 Filter Order (if N > 0, it overwrites GDpass)
7 IL 0dB 13 Passband Insertion Loss, in dB
8 Qu 1E308 -1 Unloaded Quality Factor
9 Z1 50ohm 1 Input Port Reference Impedance
10 Z2 50ohm 1 Output Port Reference Impedance
11 Temp '' 12 Temperature in Degree Celsius
END_ELEMENT
HPF_PoleZero HPF_PoleZero 7
1 Poles 'list(-0.7+j*0.7, -0.7-j*0.7)' -1 List of Complex Poles
2 Zeros '' -1 List of Complex Zeros
3 Gain 1.0 -1 Gain Factor
4 Fpass 1GHz 0 Passband Edge Frequency
5 StopType OPEN -2 Input is open or short for stopband
6 Z1 50ohm 1 Input Port Reference Impedance
7 Z2 50ohm 1 Output Port Reference Impedance
END_ELEMENT
HPF_Polynomial HPF_Polynomial 7
1 Numerator 1 -1 List of Numerator Coefficients
2 Denominator list(1,1.4,1) -1 List of Denominator Coefficients
3 Gain 1.0 -1 Gain Factor
4 Fpass 1GHz 0 Passband Edge Frequency
5 StopType OPEN -2 Input is open or short for stopband
6 Z1 50ohm 1 Input Port Reference Impedance
7 Z2 50ohm 1 Output Port Reference Impedance
END_ELEMENT
HPF_RaisedCos HPF_RaisedCos 9
1 Alpha 0.35 -1 Rolloff factor defining filters excess bandwidth, 0 <= Alpha <= 1
2 SymbolRate 24.3KHz 0 Digital symbol rate defining filters bandwidth
3 DelaySymbols 5 -1 Number of symbols delayed by the filter
4 Exponent 0.5 -1 Exponent Factor ( 0<= Exponent <= 1 )
5 DutyCycle 100 -1 Pulse duty cycle in percent, used for sinc(x) correction
6 SincE y_n0 -2 Yes for applying Exponent Factor on sinc(x) correction
7 Gain 1.0 -1 Gain Factor
8 Zout 50ohm 1 Output Impedance
9 WindowType 0 -1 Window Type, 0=None, 1=Hann, 2=Hamming
END_ELEMENT
HP_Diode_Model HP_Diode_Model 4
1 File Diode.mds -1 Name of Rawfile
2 Rs '' 1 Series resistance
3 Ls '' 3 Parasitic inductance
4 Tt '' 6 Transit time,s
END_ELEMENT
HP_FET HP_FET 3
1 Model HPFETM1 -1 Model instance name
2 Wtot '' 5 Total gate width
3 N '' -1 Number of gate fingers
END_ELEMENT
HP_FET_Model HP_FET_Model 7
1 File State.mds -1 Name of Rawfile
2 Rs '' 1 Source resistance
3 Rg '' 1 Gate resistance
4 Rd '' 1 Drain resistance
5 Ls '' 3 Source inductance
6 Lg '' 3 Gate inductance
7 Ld '' 3 Drain inductance
END_ELEMENT
HP_MOS HP_MOS 3
1 Model HPMOSM1 -1 Model instance name
2 Wtot '' 5 Total gate width
3 N '' -1 Number of gate fingers
END_ELEMENT
HP_MOS_Model HP_MOS_Model 7
1 File State.mds -1 Name of Rawfile
2 Rs '' 1 Source resistance
3 Rg '' 1 Gate resistance
4 Rd '' 1 Drain resistance
5 Ls '' 3 Source inductance
6 Lg '' 3 Gate inductance
7 Ld '' 3 Drain inductance
END_ELEMENT
HYBCOMB1 HYBCOMB1 19
1 ZB 50.0ohm 1 Characteristic impedance of balun line
2 LenB 12.0mils 5 Physical length of balun line
3 KB 2.0 -1 Effective dielectric constant of balun line
4 AB 0.0 -1 Attenuation of balun line, dB per unit length
5 FB 1.0GHz 0 Frequency for scaling attenuation of balun line
6 NB 5.0 -1 Number of turns of balun line
7 ALB 960.0nH 3 Inductance index of balun line
8 ZX 50.0ohm 1 Characteristic impedance of transformer line
9 LenX 12.0mils 5 Physical length of transformer line
10 KX 2.0 -1 Effective dielectric constant of transformer line
11 AX 0.0 -1 Attenuation of transformer line, dB per unit length
12 FX 1.0GHz 0 Frequency for scaling attenuation of transformer line
13 NX 5.0 -1 Number of turns of transformer line
14 ALX 960.0nH 3 Inductance index of transformer line
15 TanD 0 -1 Dielectric loss tangent
16 Mur 1 -1 Relative permeability
17 TanM 0 -1 Permeability
18 Sigma 0 -1 Dielectric conductivity
19 Temp '' 12 Physical temperature
END_ELEMENT
HYBCOMB2 HYBCOMB2 19
1 ZB 50.0ohm 1 Characteristic impedance of balun line
2 LenB 12.0mils 5 Physical length of balun line
3 KB 2.0 -1 Effective dielectric constant of balun line
4 AB 0.0 -1 Attenuation of balun line, dB per unit length
5 FB 1.0GHz 0 Frequency for scaling attenuation of balun line
6 MUB 100.0 -1 Relative permeability of ferrite sleeve for balun line
7 LB 20.0nH 3 Inductance (per unit length) of balun line without the sleeve
8 ZX 50.0ohm 1 Characteristic impedance of transformer line
9 LenX 12.0mils 5 Physical length of transformer line
10 KX 2.0 -1 Effective dielectric constant of transformer line
11 AX 0.0 -1 Attenuation of transformer line, dB per unit length
12 FX 1.0GHz 0 Frequency for scaling attenuation of transformer line
13 MUX 100.0 -1 Relative permeability of ferrite sleeve for transformer line
14 LX 20.0nH 3 Inductance (per unit length) of transformer line without the sleeve
15 TanD 0 -1 Dielectric loss tangent
16 Mur 1 -1 Relative permeability
17 TanM 0 -1 Permeability
18 Sigma 0 -1 Dielectric conductivity
19 Temp '' 12 Physical temperature
END_ELEMENT
HYBPI HYBPI 9
1 G 20.0uS 2 Transconductance
2 T 1.0nsec 6 Transient time
3 Cpi 10.0pF 4 Base-emitter, PI capacitance
4 Rpi 0.01ohm 1 Base-emitter, PI resistance
5 Cmu 5.0pF 4 Base-collector, MU capacitance
6 Rmu 1000.0ohm 1 Base-collector, MU resistance
7 Rb 0.02ohm 1 Base resistance
8 Rc 500.0ohm 1 Collector resistance
9 Re 0.04ohm 1 Emitter resistance
END_ELEMENT
HarmonicBalance HarmonicBalance 92
1 MaxOrder 4 -1 Maximum combined order to be considered
2 Freq 1.0GHz 0 Frequency of fundamental
3 Order 3 -1 Maximum order of fundamental to be considered
4 NestLevel 2 -1 Levels of subcircuits to output
5 StatusLevel 2 -1 Degree of annotation
6 FundOversample 1 -1 Oversampling ratio for FFT
7 Oversample '' -1 Oversampling ratio for FFT (repeated)
8 PackFFT '' -1 Pack FFT in multi-tone analysis
9 MaxIters 10 -1 Max number of iterations
10 GuardThresh '' -1 Guard threshold
11 SamanskiiConstant 2 -1 Samanskii constant
12 Restart No -1 Do not use last solution as initial guess
13 ArcLevelMaxStep 0.0 -1 Maximum arc-length step for source-level continuation
14 MaxStepRatio 100 -1 Ratio of maximum to given number of steps
15 MaxShrinkage 1.0e-5 -1 Maximum step shrinkage
16 OutputAllSolns '' -1 Output spectra at all computed steps when sweeping
17 ArcMaxStep 0.0 -1 Maximum arc-length step
18 ArcMinValue '' -1 Minimum value for parameter during arclength continuation
19 ArcMaxValue '' -1 Maximum value for parameter during arclength continuation
20 SS_MixerMode '' -1 Flag to indicate SS mixer mode
21 SS_UseSweepPlan '' -1 Flag to indicate use of SweepPlan
22 SS_Plan '' -1 Instance/path name for small signal sweep values
23 SS_Start 1.0GHz 0 Start frequency
24 SS_Stop 10.0GHz 0 Stop frequency
25 SS_Step 1.0GHz 0 Step frequency
26 SS_Center '' 0 Center frequency
27 SS_Span '' 0 Span
28 SS_Lin '' -1 Linear sweep
29 SS_Dec '' -1 Number of points per decade
30 SS_Log '' -1 Log sweep
31 SS_Reverse '' -1 Reverse sweep
32 SS_Pt '' 0 Single frequency
33 SS_Sort 'LINEAR START STEP' -1 Sort frequencies
34 SS_Freq '' 0 Small signal mixer frequency
35 SS_Thresh '' -1 Small signal spectral threshold
36 UseAllSS_Freqs yes -1 Solve for all small signal mixer sidebands (requires more memory)
37 MergeSS_Freqs '' -1 Merge small- and large-signal solutions
38 InputFreq 1Hz 0 Input frequency for desired SSB mixing term
39 NLNoiseMode '' -1 Flag to indicate nonlinear noise mode
40 NLNoiseUseSweepPlan '' -1 Flag to indicate use of SweepPlan
41 NoiseFreqPlan '' -1 Instance/path name for noise sweep values
42 NLNoiseStart 1.0GHz 0 Start frequency
43 NLNoiseStop 10.0GHz 0 Stop frequency
44 NLNoiseStep 1.0GHz 0 Step frequency
45 NLNoiseCenter '' 0 Center frequency
46 NLNoiseSpan '' 0 Span
47 NLNoiseLin '' -1 Linear sweep
48 NLNoiseDec '' -1 Number of points per decade
49 NLNoiseLog '' -1 Log sweep
50 NLNoiseReverse '' -1 Reverse sweep
51 NLNoisePt '' 0 Single frequency
52 NLNoiseSort 'LINEAR START STEP' -1 Sort frequencies
53 FreqForNoise '' 0 Single point noise frequency
54 NoiseInputPort 1 -1 Input port for noise figure calculation
55 NoiseOutputPort 2 -1 Output port for noise figure calculation
56 PhaseNoise No -1 Specify noise frequency as offset from oscillation frequency
57 FM_Noise '' -1 Consider AM to FM conversion in oscillator phase noise analysis
58 NoiseNode '' -1 Nodename to compute noise voltage (repeatable)
59 SortNoise NoiseSortOff -1 Sort Noise Contribution by: Value/1, Name/2 (default: 0/NoOutput)
60 NoiseThresh '' -1 Noise Contribution Threshold
61 IncludePortNoise '' -1 Include port noise in noise voltage and currents
62 NoisyTwoPort '' -1 Compute noisy two-port parameters: sopt, rn, & nfmin
63 BandwidthForNoise 1.0Hz 0 Bandwidth for spectral noise analysis
64 OutputBudgetIV '' -1 Output top-level pin currents and voltages
65 UseKrylov '' -1 Use Krylov solver
66 UseInitialAWHB '' -1 Use initial AWHB stage before Krylov
67 AWHB_WindowSize '' -1 AWHB window size
68 GMRES_Restart '' -1 GMRES iterations before auto-restart
69 KrylovUsePacking '' -1 Use Krylov spectral packing
70 KrylovPackingThresh '' -1 Krylov bandwidth threshold
71 KrylovTightTol '' -1 GMRES tolerance
72 KrylovLooseTol '' -1 Loose tolerance for Krylov loop
73 KrylovLooseIters '' -1 Min number of iterations to invoke loose tolerance
74 KrylovMaxIters '' -1 Maximum number of GMRES iterations
75 OscMode '' -1 Flag to indicate oscillator mode
76 OscPortName '' -1 Oscillator port used to break feedback loop
77 IgnoreOscErrors '' -1 Continue sweep even after oscillation convergence error
78 SweepVar '' -1 Name of variable or parameter to be swept
79 UseSweepPlan '' -1 Flag to indicate use of SweepPlan
80 SweepPlan '' -1 SweepPlan instance path name for sweep values
81 Start 1 -1 Start value
82 Stop 10 -1 Stop value
83 Step 1 -1 Step value
84 Center '' -1 Center value
85 Span '' -1 Span
86 Lin '' -1 Linear sweep
87 Dec '' -1 Number of points per decade
88 Log '' -1 Log sweep
89 Reverse '' -1 Reverse sweep
90 Pt '' -1 Single point
91 Sort 'LINEAR START STEP' -1 Sort frequencies
92 Other '' -1 Output string to netlist
END_ELEMENT
Hybrid Hybrid 12
1 H11 '' 1 Input impedance, Ohms
2 H12 '' -1 Reverse voltage gain
3 H21 '' -1 Forward current gain
4 H22 '' 2 Output conductance
5 ImpNoncausalLength '' -1 Non-causal function impulse response order
6 ImpMode '' -1 Convolution mode
7 ImpMaxFreq '' 0 Maximum Frequency to which device is evaluated
8 ImpDeltaFreq '' 0 Sample spacing in frequency
9 ImpMaxOrder '' -1 Maximum allowed impulse response order
10 ImpWindow '' -1 Smoothing window
11 ImpRelTol '' -1 Relative impulse response truncation factor
12 ImpAbsTol '' -1 Absolute impulse response truncation factor
END_ELEMENT
Hybrid180 Hybrid180 6
1 Loss 0dB 13 Loss, in dB
2 GainBal 0dB 13 Gain Balance between Output Ports, in dB
3 PhaseBal 0deg 7 Phase Balance between Output Ports, in degree
4 Rref 50ohm 1 Port Reference Impedance
5 Temp '' 12 Temperature in Degree Celsius
6 Delay '' 6 time delay
END_ELEMENT
Hybrid90 Hybrid90 6
1 Loss 0dB 13 Loss, in dB
2 GainBal 0dB 13 Gain Balance between Output Ports, in dB
3 PhaseBal 0deg 7 Phase Balance between Output Ports, in degree
4 Rref 50ohm 1 Port Reference Impedance
5 Temp '' 12 Temperature in Degree Celsius
6 Delay '' 6 time delay
END_ELEMENT
IFINL IFINL 4
1 Subst FSub1 -1 Substrate instance name
2 D 20.0mils 5 Width of gap
3 L 1000.0mils 5 Length of finline
4 Temp '' 12 Physical temperature
END_ELEMENT
IFINLT IFINLT 3
1 Subst FSub1 -1 Substrate instance name
2 D 20.0mils 5 Width of gap
3 Temp '' 12 Physical temperature
END_ELEMENT
INDQ INDQ 5
1 L 1.0nH 3 Inductance
2 Q 50.0 -1 Quality factor
3 F 100.0MHz 0 Reference frequency for q
4 Mode loss_freq -1 Loss Mode for This Device
5 Rdc 0.0ohm 1 Resistance for modes 2 and 3
END_ELEMENT
IP3in IP3in 1
1 Function list(our_ipi=ip3_in(vout,3,{1,0},{2,-1},50)) -1 ip3_in(vout,ss_gain,fund_freq,IM_freq,ref_imped)
END_ELEMENT
IP3out IP3out 1
1 Function list(our_ipo=ip3_out(vout,{1,0},{2,-1},50)) -1 ip3_out(vout,fund_freq,IM_freq,ref_imped)
END_ELEMENT
IPn IPn 1
1 Function list(our_ipn=ipn(Vplus,Vminus,current,{1,0},{2,-1},3)) -1 ipn(positive_voltage,negative_voltage,current,fund_freq,IM_freq,order)
END_ELEMENT
IQ_DemodTuned IQ_DemodTuned 2
1 Fnom 1GHz 0 Nominal Input Frequency
2 Rout 50ohm 1 Output Resistance
END_ELEMENT
IQ_ModTuned IQ_ModTuned 2
1 Fnom 1GHz 0 Nominal Input Frequency
2 Rout 50ohm 1 Output Resistance
END_ELEMENT
I_1Tone I_1Tone 7
1 I 1mA 10 Current at center frequency, use polar() for phase
2 Freq 1GHz 0 Center frequency
3 I_USB '' 10 Current of upper sideband small signal tone, use polar() for phase
4 I_LSB '' 10 Current of lower sideband small-signal tone, use polar() for phase
5 Idc '' 10 DC current
6 Iac 1mA 10 AC current, use polar() for phase
7 FundIndex '' -1 Fundamental Frequency Index (Can Be Used Instead of Specifying Freq")
END_ELEMENT
I_AC I_AC 3
1 Idc 0mA 10 DC current
2 Iac 1.0mA 10 AC current, use polar() for phase
3 Freq freq 0 Frequency
END_ELEMENT
I_DC I_DC 2
1 Idc 1.0mA 10 DC current
2 Iac '' 10 AC current, use polar() for phase
END_ELEMENT
I_Noise I_Noise 1
1 I_Noise 1pA 10 Noise current magnitude
END_ELEMENT
I_NoiseBD I_NoiseBD 7
1 K '' -1 Multiplicative Constant
2 Ie '' -1 DC Bias Current Exponent
3 A0 '' -1 Additive Constant in the Denominator
4 A1 '' -1 Multiplication Factor for the Frequency
5 Fe '' -1 Frequency Exponent
6 Elem '' -1 ID of an element such as R, FET, BJT
7 Pin '' -1 Element Pin Number or Name
END_ELEMENT
I_Probe I_Probe 5
1 Mode 0 -1 Mode: 0 => short, >0 => DC block, <0 => DC feed
2 C '' 4 DC block capacitance (transient only)
3 L '' 3 DC feed inductance(transient only)
4 Gain '' -1 Current gain
5 wImax '' 10 Maximum current (warning)
END_ELEMENT
I_SpectrumDataset I_SpectrumDataset 3
1 Dataset '' -1 Dataset name
2 Expression '' -1 Dataset variable or expression
3 Freq 1GHz 0 Fundamental frequency
END_ELEMENT
I_nHarm I_nHarm 5
1 Freq 1GHz 0 Fundamental frequency
2 I 1mA 10 N-th harmonic amplitude (use Add for more harmonics), use polar() for phase
3 Idc 0mA 10 DC component
4 Iac 1mA 10 AC current, use polar() for phase
5 FundIndex '' -1 Fundamental Frequency Index (Can Be Used Instead of Specifying Freq")
END_ELEMENT
I_nTone I_nTone 4
1 Freq 1GHz 0 N-th frequency tone (use Add for more tones)
2 I 1mA 10 Corresponding N-th tone amplitude, (use Add for more amplitudes), use polar() for phase
3 Idc 0mA 10 DC component
4 Iac 1mA 10 AC current, use polar() for phase
END_ELEMENT
Ifc Ifc 1
1 Function list(our_ifc=ifc(I_Probe1.i,{1,0})) -1 ifc(current_probe,desired_harm_freq)
END_ELEMENT
IfcTran IfcTran 1
1 Function 'list(our_ifct=ifc_tran(I_Probe1.i,1GHz, 1))' -1 ifc_tran(current_probe,fund_freq,num_of_harm)
END_ELEMENT
InitCond InitCond 2
1 V 0V 9 Initial node voltage for transient simulation
2 R '' 1 Connection resistance
END_ELEMENT
InitCondByName InitCondByName 1
1 NodeName list(prm("NodeSetForm",,0V,)) -1 NodeName/Inital voltage/Connection resistance
END_ELEMENT
IntegratorSML IntegratorSML 3
1 GainAC 1. -1 integrator gain
2 GainDC 0. -1 gain of dc constant
3 Rref 50.ohm 1 reference resistance for both ports
END_ELEMENT
IsolatorSML IsolatorSML 15
1 F1 '' 0 first frequency break point
2 F2 '' 0 second frequency break point
3 F3 '' 0 third frequency break point
4 Loss1 0.dB 13 attenuation in dB for frequencies <=F1
5 Loss2 0.dB 13 attenuation in dB for F1<frequency<=F2
6 Loss3 0.dB 13 attenuation in dB for F2>frequency<=F3
7 Loss4 0.dB 13 attenuation in dB for frequencies >F3
8 VSWR1 1. -1 VSWR at both ports for frequencies <=F1
9 VSWR2 1. -1 VSWR at both ports for F1<frequency<=F2
10 VSWR3 1. -1 VSWR at both ports for F2>frequency<=F3
11 VSWR4 1. -1 VSWR at both ports for frequencies >F3
12 Isolat 100.dB 13 isolation in dB
13 Z1 '' 1 reference impedance for port1
14 Z2 '' 1 reference impedance for port2
15 Temp '' 12 temperature in degrees Celsius
END_ELEMENT
IspecTran IspecTran 1
1 Function 'list(our_ispect=ispec_tran(I_Probe1.i,1GHz, 8))' -1 ispec_tran(current_probe,fund_freq,num_of_harm)
END_ELEMENT
It It 1
1 Function list(our_it=it(I_Probe1.i,0,10nsec,201)) -1 it(current_probe,tmin,tmax,num_of_pts)
END_ELEMENT
ItDataset ItDataset 9
1 Dataset '' -1 Dataset name
2 Expression '' -1 Dataset variable or expression
3 Freq 0GHz 0 Carrier frequency
4 Gain 1.0 -1 Gain to apply to dataset values; may be complex and time varying
5 Tmax '' 6 Maximum dataset time to use
6 Toffset '' 6 Initial dataset time offset
7 Tscale '' -1 Time speed-up scaling factor
8 Idc 0mA 10 DC offset current
9 Interpolation 0 -1 Interpolation method
END_ELEMENT
ItExp ItExp 6
1 I_Low 0mA 10 Initial current
2 I_High 1mA 10 Pulse current
3 Delay1 0nsec 6 Rise delay time
4 Tau1 1nsec 6 Rise time constant
5 Delay2 1nsec 6 Fall delay time
6 Tau2 1nsec 6 Fall time constant
END_ELEMENT
ItPWL ItPWL 1
1 I_Tran 'pwl(time, 0ns,0mA, 10ns,1mA, 20ns,0mA)' -1 pwl(time, time-voltage pairs), or pwlr(time, Ncycles, time-voltage pairs)
END_ELEMENT
ItPulse ItPulse 8
1 I_Low 0mA 10 Initial current
2 I_High 1mA 10 Pulse current
3 Delay 0nsec 6 Time delay
4 Edge linear -1 Rising and falling edge type
5 Rise 1nsec 6 Rise time
6 Fall 1nsec 6 Fall time
7 Width 3nsec 6 Pulse width
8 Period 10nsec 6 Fall time
END_ELEMENT
ItSFFM ItSFFM 5
1 Idc 0mA 10 Initial current offset
2 Amplitude 1mA 10 Amplitude of sinusoidal wave
3 CarrierFreq 1GHz 0 Carrier Frequency
4 ModIndex 0.5 -1 Modulation Index
5 SignalFreq 1MHz 0 Signal Frequency
END_ELEMENT
ItSine ItSine 6
1 Idc 0mA 10 Initial current offset
2 Amplitude 1mA 10 Amplitude of sinusoidal wave
3 Freq 1GHz 0 Frequency of sinusoidal wave
4 Delay 0nsec 6 Time Delay
5 Damping 0 -1 Damping factor
6 Phase 0deg 7 Phase value
END_ELEMENT
ItStep ItStep 4
1 I_Low 0mA 10 Initial current
2 I_High 1mA 10 Pulse current
3 Delay 0nsec 6 Time delay
4 Rise 1nsec 6 Rise time
END_ELEMENT
ItUserDef ItUserDef 3
1 I_Tran damped_sin(time) -1 Transient current
2 Idc '' 10 DC current
3 Iac 1mA 10 AC current
END_ELEMENT
JFET_Model JFET_Model 32
1 NFET y_n1 -1 Model Type - YES or NO
2 PFET y_n0 -1 Model Type - YES or NO
3 Vto '' 9 Pinch-off voltage, V
4 Beta '' -1 Transconductance parameter, A/(V*m)^2
5 Lambda '' -1 Channel length modulation parameter, 1/V
6 Rd '' 1 Drain Resistance, Ohm
7 Rs '' 1 Source Resistance, Ohm
8 Is '' 10 Gate Saturation Current, A
9 Js '' 10 Gate Saturation Current, A
10 Cgs '' 4 G-S Zero-bias Junction Cap., F
11 Cgd '' 4 G-D Zero-bias Junction Cap., F
12 Pb '' -1 Gate junction potential, V
13 Fc '' -1 Forward-bias Depletion Cap. Coefficient
14 Tnom '' 12 Nominal ambient temperature, Celsius
15 Kf '' -1 Flicker Noise Coefficient
16 Af '' -1 Flicker Noise Exponent
17 Imax '' 10 Explosion current, A
18 N '' -1 Gate P-N Emission Coefficient
19 Isr '' 10 Gate P-N Recombination Current, A
20 Nr '' -1 Isr Emission Coefficient
21 Alpha '' -1 Ionization coefficient, 1/V
22 Vk '' 9 Ionization knee voltage, V
23 M '' -1 Gate P-N grading coefficient
24 Vtotc '' -1 Vto temperature coefficient, V/Degree C
25 Betatce '' -1 Beta temperature coefficient, 1/Degree C
26 Xti '' -1 Temperature Exponent for Saturation Current
27 Ffe '' -1 Flicker noise frequency exponent
28 wBvgs '' 9 Gate-Source Reverse Breakdown Voltage (warning), V
29 wBvgd '' 9 Gate-Drain Reverse Breakdown Voltage (warning), V
30 wBvds '' 9 Drain-Source Breakdown Voltage (warning), V
31 wIdsmax '' 10 Maximum Drain-Source Current (warning), A
32 wPmax '' 8 Maximum Power Dissipation (warning), W
END_ELEMENT
JFET_NFET JFET_NFET 5
1 Model JFETM1 -1 Model instance name
2 Area '' -1 Junction Area Factor
3 Region '' -1 DC operating region, 0=off, 1=on, 2=rev, 3=ohmic
4 Temp '' 12 Device operating temperature
5 Mode simtype_nonlin -1 Simulation Mode for This Device
END_ELEMENT
JFET_PFET JFET_PFET 5
1 Model JFETM1 -1 Model instance name
2 Area '' -1 Junction Area Factor
3 Region '' -1 DC operating region, 0=off, 1=on, 2=rev, 3=ohmic
4 Temp '' 12 Device operating temperature
5 Mode simtype_nonlin -1 Simulation Mode for This Device
END_ELEMENT
L L 7
1 L 1.0nH 3 Inductance
2 R '' 1 Series resistance
3 Temp '' 12 Temperature
4 Tnom '' 12 Nominal temperature
5 TC1 '' 12 Temperature coefficient; per degree Celsius
6 TC2 '' 12 Temperature coefficient; per degree Celsius squared
7 InitCond '' -1 Initial condition for transient analysis
END_ELEMENT
LEVEL1_Model LEVEL1_Model 46
1 NMOS y_n1 -1 Model Type - YES or NO
2 PMOS y_n0 -1 Model Type - YES or NO
3 Idsmod 1 -1 1=LEVEL1 2=LEVEL2 3=LEVEL3 4=BSIM1 5=BSIM2 6=NMOD 8=BSIM3
4 Capmod 1 -1 0=NO CAP 1=CMEYER/WARD 2=SMOOTH 3=QMEYER
5 Vto '' 9 Zero-Bias Threshold Voltage, V
6 Kp '' -1 Transconductance parameter, A/V^2
7 Gamma '' -1 Bulk Threshold parameter, V^(1/2)
8 Phi '' 9 Surface Potential, V
9 Lambda '' -1 Channel length modulation parameter, 1/V
10 Rd '' 1 Drain Resistance, Ohm
11 Rs '' 1 Source Resistance, Ohm
12 Cbd '' 4 B-D Zero-bias Junction Cap., F
13 Cbs '' 4 B-S Zero-bias Junction Cap., F
14 Is '' 10 Gate Saturation Current, A
15 Pb '' 9 Bulk Junction Potential, V
16 Cgso '' -1 G-S Overlap Cap., F/m
17 Cgdo '' -1 G-D Overlap Cap., F/m
18 Cgbo '' -1 G-B Overlap Cap., F/m
19 Rsh '' -1 Drain and Source Diffusion Sheet Resistance, Ohm/Sq
20 Cj '' -1 Zero-bias Bulk Junction Cap., F/m^2
21 Mj '' -1 Junction grading coefficient
22 Cjsw '' -1 Zero-bias Bulk Junction Sidewall Cap., F/m
23 Mjsw '' -1 Junction Sidewall grading coefficient
24 Js '' -1 Gate Saturation Current, A/m^2
25 Tox '' 5 Oxide Thickness, m
26 Nsub '' -1 Substrate Doping, cm^(-3)
27 Nss '' -1 Surface State Density, cm^(-2)
28 Tpg '' -1 Type of Gate Material: +1=op -1=same 0=Al
29 Ld '' 5 Lateral Diffusion, m
30 Uo '' -1 Surface Mobility, cm^2/(V*s)
31 Kf '' -1 Flicker Noise Coefficient
32 Af '' -1 Flicker Noise Exponent
33 Fc '' -1 Forward-bias Depletion Cap. Coefficient
34 Rg '' 1 Gate Resistance, Ohm
35 Rds '' 1 Drain-Source Shunt Resistance, Ohm
36 Tnom '' 12 Nominal ambient temperature, Celsius
37 N '' -1 Bulk P-N Emission Coefficient
38 Tt '' -1 Bulk P-N Transit Time
39 Ffe '' -1 Flicker noise frequency exponent
40 Imax '' 10 Explosion current, A
41 wVsubfwd '' 9 Substrate Junction Forward Bias (warning), V
42 wBvsub '' 9 Substrate Junction Reverse Breakdown Voltage (warning), V
43 wBvg '' 9 Gate Oxide Breakdown Voltage (warning), V
44 wBvds '' 9 Drain-Source Breakdown Voltage (warning), V
45 wIdsmax '' 10 Maximum Drain-Source Current (warning), A
46 wPmax '' 8 Maximum Power Dissipation (warning), W
END_ELEMENT
LEVEL2_Model LEVEL2_Model 54
1 NMOS y_n1 -1 Model Type - YES or NO
2 PMOS y_n0 -1 Model Type - YES or NO
3 Idsmod 2 -1 1=LEVEL1 2=LEVEL2 3=LEVEL3 4=BSIM1 5=BSIM2 6=NMOD 8=BSIM3
4 Capmod 1 -1 0=NO CAP 1=CMEYER/WARD 2=SMOOTH 3=QMEYER
5 Vto '' 9 Zero-Bias Threshold Voltage, V
6 Kp '' -1 Transconductance parameter, A/V^2
7 Gamma '' -1 Bulk Threshold parameter, V^(1/2)
8 Phi '' 9 Surface Potential, V
9 Lambda '' -1 Channel length modulation parameter, 1/V
10 Rd '' 1 Drain Resistance, Ohm
11 Rs '' 1 Source Resistance, Ohm
12 Cbd '' 4 B-D Zero-bias Junction Cap., F
13 Cbs '' 4 B-S Zero-bias Junction Cap., F
14 Is '' 10 Gate Saturation Current, A
15 Pb '' 9 Bulk Junction Potential, V
16 Cgso '' -1 G-S Overlap Cap., F/m
17 Cgdo '' -1 G-D Overlap Cap., F/m
18 Cgbo '' -1 G-B Overlap Cap., F/m
19 Rsh '' -1 Drain and Source Diffusion Sheet Resistance, Ohm/Sq
20 Cj '' -1 Zero-bias Bulk Junction Cap., F/m^2
21 Mj '' -1 Junction grading coefficient
22 Cjsw '' -1 Zero-bias Bulk Junction Sidewall Cap., F/m
23 Mjsw '' -1 Junction Sidewall grading coefficient
24 Js '' -1 Gate Saturation Current, A/m^2
25 Tox '' 5 Oxide Thickness, m
26 Nsub '' -1 Substrate Doping, cm^(-3)
27 Nss '' -1 Surface State Density, cm^(-2)
28 Nfs '' -1 Fast Surface State Density, cm^(-2)
29 Tpg '' -1 Type of Gate Material: +1=op -1=same 0=Al
30 Xj '' 5 Metallurgical Junction Depth, m
31 Ld '' 5 Lateral Diffusion, m
32 Uo '' -1 Surface Mobility, cm^2/(V*s)
33 Ucrit '' -1 Critical Field for Mobility Degradation, V/cm
34 Uexp '' -1 Critical Field Exponent in Mobility Degradation
35 Vmax '' -1 Maximum Drift Velocity of Carriers, m/s
36 Neff '' -1 Total Channel Charge Coefficient
37 Xqc '' -1 Coefficient of Channel Charge Share
38 Kf '' -1 Flicker Noise Coefficient
39 Af '' -1 Flicker Noise Exponent
40 Fc '' -1 Forward-bias Depletion Cap. Coefficient
41 Delta '' -1 Width Effect on Threshold Voltage
42 Rg '' 1 Gate Resistance, Ohm
43 Rds '' 1 Drain-Source Shunt Resistance, Ohm
44 Tnom '' 12 Nominal ambient temperature, Celsius
45 N '' -1 Bulk P-N Emission Coefficient
46 Tt '' -1 Bulk P-N Transit Time
47 Ffe '' -1 Flicker noise frequency exponent
48 Imax '' 10 Explosion current, A
49 wVsubfwd '' 9 Substrate Junction Forward Bias (warning), V
50 wBvsub '' 9 Substrate Junction Reverse Breakdown Voltage (warning), V
51 wBvg '' 9 Gate Oxide Breakdown Voltage (warning), V
52 wBvds '' 9 Drain-Source Breakdown Voltage (warning), V
53 wIdsmax '' 10 Maximum Drain-Source Current (warning), A
54 wPmax '' 8 Maximum Power Dissipation (warning), W
END_ELEMENT
LEVEL3_MOD_Model LEVEL3_MOD_Model 59
1 NMOS y_n1 -1 Model Type - YES or NO
2 PMOS y_n0 -1 Model Type - YES or NO
3 Idsmod 6 -1 1=LEVEL1 2=LEVEL2 3=LEVEL3 4=BSIM1 5=BSIM2 6=NMOD 8=BSIM3
4 Capmod 1 -1 0=NO CAP 1=CMEYER/WARD 2=SMOOTH 3=QMEYER
5 Vto '' 9 Zero-Bias Threshold Voltage, V
6 Kp '' -1 Transconductance Parameter, A/V^2
7 Gamma '' -1 Bulk Threshold Parameter, V^(1/2)
8 Gamma2 '' -1 Bulk Threshold Parameter Deep in Substrate, V^(1/2)
9 Zeta '' -1 Mobility Modulation with Substrate Bias Parameter
10 Phi '' 9 Surface Potential, V
11 Rd '' 1 Drain Resistance, Ohm
12 Rs '' 1 Source Resistance, Ohm
13 Cbd '' 4 B-D Zero-bias Junction Cap., F
14 Cbs '' 4 B-S Zero-bias Junction Cap., F
15 Is '' 10 Gate Saturation Current, A
16 Pb '' 9 Bulk Junction Potential, V
17 Cgso '' -1 G-S Overlap Cap., F/m
18 Cgdo '' -1 G-D Overlap Cap., F/m
19 Cgbo '' -1 G-B Overlap Cap., F/m
20 Rsh '' -1 Drain and Source Diffusion Sheet Resistance, Ohm/Sq
21 Cj '' -1 Zero-bias Bulk Junction Cap., F/m^2
22 Mj '' -1 Junction grading coefficient
23 Cjsw '' -1 Zero-bias Bulk Junction Sidewall Cap., F/m
24 Mjsw '' -1 Junction Sidewall grading coefficient
25 Js '' -1 Gate Saturation Current, A/m^2
26 Tox '' 5 Oxide Thickness, m
27 Nsub '' -1 Substrate Doping, cm^(-3)
28 Nss '' -1 Surface State Density, cm^(-2)
29 Nfs '' -1 Fast Surface State Density, cm^(-2)
30 Tpg '' -1 Type of Gate Material: +1=op -1=same 0=Al
31 Xj '' 5 Metallurgical Junction Depth, m
32 Ld '' 5 Lateral Diffusion, m
33 Uo '' -1 Surface Mobility, cm^2/(V*s)
34 Ucrit '' -1 Critical Field for Mobility Degradation, V/cm
35 Uexp '' -1 Critical Field Exponent in Mobility Degradation
36 Vmax '' -1 Maximum Drift Velocity of Carriers, m/s
37 Xqc '' -1 Coefficient of Channel Charge Share
38 Kf '' -1 Flicker Noise Coefficient
39 Af '' -1 Flicker Noise Exponent
40 Fc '' -1 Forward-bias Depletion Cap. Coefficient
41 Delta '' -1 Width Effect on Threshold Voltage
42 Theta '' -1 Mobility Modulation, 1/V
43 Eta '' -1 Static Feedback
44 Kappa '' -1 Saturation Field Factor
45 Kappag '' -1 Field Correction Factor Gate Drive Dependence
46 Xmu '' -1 Subthreshold Fitting Model Parameter for NMOD
47 Rg '' 1 Gate Resistance, Ohm
48 Rds '' 1 Drain-Source Shunt Resistance, Ohm
49 Tnom '' 12 Nominal ambient temperature, Celsius
50 N '' -1 Bulk P-N Emission Coefficient
51 Tt '' -1 Bulk P-N Transit Time
52 Ffe '' -1 Flicker noise frequency exponent
53 Imax '' 10 Explosion current, A
54 wVsubfwd '' 9 Substrate Junction Forward Bias (warning), V
55 wBvsub '' 9 Substrate Junction Reverse Breakdown Voltage (warning), V
56 wBvg '' 9 Gate Oxide Breakdown Voltage (warning), V
57 wBvds '' 9 Drain-Source Breakdown Voltage (warning), V
58 wIdsmax '' 10 Maximum Drain-Source Current (warning), A
59 wPmax '' 8 Maximum Power Dissipation (warning), W
END_ELEMENT
LEVEL3_Model LEVEL3_Model 55
1 NMOS y_n1 -1 Model Type - YES or NO
2 PMOS y_n0 -1 Model Type - YES or NO
3 Idsmod 3 -1 1=LEVEL1 2=LEVEL2 3=LEVEL3 4=BSIM1 5=BSIM2 6=NMOD 8=BSIM3
4 Capmod 1 -1 0=NO CAP 1=CMEYER/WARD 2=SMOOTH 3=QMEYER
5 Vto '' 9 Zero-Bias Threshold Voltage, V
6 Kp '' -1 Transconductance parameter, A/V^2
7 Gamma '' -1 Bulk Threshold parameter, V^(1/2)
8 Phi '' 9 Surface Potential, V
9 Rd '' 1 Drain Resistance, Ohm
10 Rs '' 1 Source Resistance, Ohm
11 Cbd '' 4 B-D Zero-bias Junction Cap., F
12 Cbs '' 4 B-S Zero-bias Junction Cap., F
13 Is '' 10 Gate Saturation Current, A
14 Pb '' 9 Bulk Junction Potential, V
15 Cgso '' -1 G-S Overlap Cap., F/m
16 Cgdo '' -1 G-D Overlap Cap., F/m
17 Cgbo '' -1 G-B Overlap Cap., F/m
18 Rsh '' -1 Drain and Source Diffusion Sheet Resistance, Ohm/Sq
19 Cj '' -1 Zero-bias Bulk Junction Cap., F/m^2
20 Mj '' -1 Junction grading coefficient
21 Cjsw '' -1 Zero-bias Bulk Junction Sidewall Cap., F/m
22 Mjsw '' -1 Junction Sidewall grading coefficient
23 Js '' -1 Gate Saturation Current, A/m^2
24 Tox '' 5 Oxide Thickness, m
25 Nsub '' -1 Substrate Doping, cm^(-3)
26 Nss '' -1 Surface State Density, cm^(-2)
27 Nfs '' -1 Fast Surface State Density, cm^(-2)
28 Tpg '' -1 Type of Gate Material: +1=op -1=same 0=Al
29 Xj '' 5 Metallurgical Junction Depth, m
30 Ld '' 5 Lateral Diffusion, m
31 Uo '' -1 Surface Mobility, cm^2/(V*s)
32 Ucrit '' -1 Critical Field for Mobility Degradation, V/cm
33 Uexp '' -1 Critical Field Exponent in Mobility Degradation
34 Vmax '' -1 Maximum Drift Velocity of Carriers, m/s
35 Xqc '' -1 Coefficient of Channel Charge Share
36 Kf '' -1 Flicker Noise Coefficient
37 Af '' -1 Flicker Noise Exponent
38 Fc '' -1 Forward-bias Depletion Cap. Coefficient
39 Delta '' -1 Width Effect on Threshold Voltage
40 Theta '' -1 Mobility Modulation, 1/V
41 Eta '' -1 Static Feedback
42 Kappa '' -1 Saturation Field Factor
43 Rg '' 1 Gate Resistance, Ohm
44 Rds '' 1 Drain-Source Shunt Resistance, Ohm
45 Tnom '' 12 Nominal ambient temperature, Celsius
46 N '' -1 Bulk P-N Emission Coefficient
47 Tt '' -1 Bulk P-N Transit Time
48 Ffe '' -1 Flicker noise frequency exponent
49 Imax '' 10 Explosion current, A
50 wVsubfwd '' 9 Substrate Junction Forward Bias (warning), V
51 wBvsub '' 9 Substrate Junction Reverse Breakdown Voltage (warning), V
52 wBvg '' 9 Gate Oxide Breakdown Voltage (warning), V
53 wBvds '' 9 Drain-Source Breakdown Voltage (warning), V
54 wIdsmax '' 10 Maximum Drain-Source Current (warning), A
55 wPmax '' 8 Maximum Power Dissipation (warning), W
END_ELEMENT
LOS_Link LOS_Link 17
1 CenterFreq 1GHz 0 Link Center Frequency
2 BW 100MHz 0 Link Bandwidth
3 TxGain 0dB 13 Transmitting Antenna Gain, in dB
4 TxVSWR 1 -1 Transmitting Antenna VSWR
5 TxParabolaD '' 5 Transmitting Parabolic Antenna Diameter. Overwrite TxGain
6 TxEfficiency '' -1 Transmitting Parabolic Antenna Efficiency. Overwrite TxGain
7 RxGain 0dB 13 Receiving Antenna Gain, in dB
8 RxVSWR 1 -1 Receiving Antenna VSWR
9 RxParabolaD '' 5 Receiving Parabolic Antenna Diameter. Overwrite RxGain
10 RxEfficiency '' -1 Receiving Parabolic Antenna Efficiency. Overwrite RxGain
11 RxNoiseTemp 150C 12 Receiving Antenna Noise Temperature, in degree-Kelvin
12 PathLength (10km) 11 Line-Of-Sight Path Length
13 NotchFreq '' 0 Notch Frequency due to Ground Reflection Path Interference
14 NotchDepth '' 13 Notch Depth w.r.t. LOS Signal, in dB
15 DeltaDelay '' 6 Time Delay of Ground Reflection Path w.r.t. LOS Path
16 Z1 50ohm 1 Transmitting Antenna Reference Impedance
17 Z2 50ohm 1 Transmitting Antenna Reference Impedance
END_ELEMENT
LPF_Bessel LPF_Bessel 11
1 Fpass 1GHz 0 Passband Edge Frequency
2 Apass 3dB 13 Attenuation at Passband Edge, in dB
3 GDpass 0.9 -1 Group Delay Rolloff at Passband Edge, 0 < GDpass < 1
4 StopType OPEN -2 Input is open or short for stopband
5 MaxRej '' 13 Maximum Rejection Level , in dB
6 N 0 -1 Filter Order (if N > 0, it overwrites GDpass)
7 IL 0dB 13 Passband Insertion Loss, in dB
8 Qu 1E308 -1 Unloaded Quality Factor
9 Z1 50ohm 1 Input Port Reference Impedance
10 Z2 50ohm 1 Output Port Reference Impedance
11 Temp '' 12 Temperature in Degree Celsius
END_ELEMENT
LPF_Butterworth LPF_Butterworth 12
1 Fpass 1GHz 0 Passband Edge Frequency
2 Apass 3dB 13 Attenuation at Passband Edge, in dB
3 Fstop 1.2GHz 0 Stopband Edge Frequency
4 Astop 20dB 13 Attenuation at Stopband Edge, in dB
5 StopType OPEN -2 Input is open or short for stopband
6 MaxRej '' 13 Maximum Rejection Level , in dB
7 N 0 -1 Filter Order (if N > 0, it overwrites Fstop and Astop)
8 IL 0dB 13 Passband Insertion Loss, in dB
9 Qu 1E308 -1 Unloaded Quality Factor
10 Z1 50ohm 1 Input Port Reference Impedance
11 Z2 50ohm 1 Output Port Reference Impedance
12 Temp '' 12 Temperature in Degree Celsius
END_ELEMENT
LPF_Chebyshev LPF_Chebyshev 13
1 Fpass 1GHz 0 Passband Edge Frequency
2 Apass 1dB 13 Attenuation at Passband Edge, in dB
3 Ripple 1dB 13 Passband Ripple, in dB
4 Fstop 1.2GHz 0 Stopband Edge Frequency
5 Astop 20dB 13 Attenuation at Stopband Edge, in dB
6 StopType OPEN -2 Input is open or short for stopband
7 MaxRej '' 13 Maximum Rejection Level , in dB
8 N 0 -1 Filter Order (if N > 0, it overwrites Fstop and Astop)
9 IL 0dB 13 Passband Insertion Loss, in dB
10 Qu 1E308 -1 Unloaded Quality Factor
11 Z1 50ohm 1 Input Port Reference Impedance
12 Z2 50ohm 1 Output Port Reference Impedance
13 Temp '' 12 Temperature in Degree Celsius
END_ELEMENT
LPF_Elliptic LPF_Elliptic 12
1 Fpass 1GHz 0 Passband Edge Frequency
2 Ripple 1dB 13 Passband Ripple, in dB
3 Fstop 1.2GHz 0 Stopband Edge Frequency
4 Astop 20dB 13 Attenuation at Stopband Edge, in dB
5 StopType OPEN -2 Input is open or short for stopband
6 MaxRej '' 13 Maximum Rejection Level , in dB
7 N 0 -1 Filter Order (if N > 0, it overwrites Fstop and Astop)
8 IL 0dB 13 Passband Insertion Loss, in dB
9 Qu 1E308 -1 Unloaded Quality Factor
10 Z1 50ohm 1 Input Port Reference Impedance
11 Z2 50ohm 1 Output Port Reference Impedance
12 Temp '' 12 Temperature in Degree Celsius
END_ELEMENT
LPF_GMSK LPF_GMSK 5
1 BT 0.3 -1 Bandwidth-Time Product of Gaussian Filter
2 BitRate 270.833KHz 0 Bit rate defining bandwidth of filter
3 DelayBits 5 -1 Number of bits delayed by the filter
4 Gain 1.0 -1 Gain Factor
5 Zout 50ohm 1 Output Impedance
END_ELEMENT
LPF_Gaussian LPF_Gaussian 11
1 Fpass 1GHz 0 Passband Edge Frequency
2 Apass 3dB 13 Attenuation at Passband Edge, in dB
3 GDpass 0.9 -1 Group Delay Rolloff at Passband Edge, 0 < GDpass < 1
4 StopType OPEN -2 Input is open or short for stopband
5 MaxRej '' 13 Maximum Rejection Level , in dB
6 N 0 -1 Filter Order (if N > 0, it overwrites GDpass)
7 IL 0dB 13 Passband Insertion Loss, in dB
8 Qu 1E308 -1 Unloaded Quality Factor
9 Z1 50ohm 1 Input Port Reference Impedance
10 Z2 50ohm 1 Output Port Reference Impedance
11 Temp '' 12 Temperature in Degree Celsius
END_ELEMENT
LPF_PoleZero LPF_PoleZero 7
1 Poles 'list(-0.7+j*0.7, -0.7-j*0.7)' -1 List of Complex Poles
2 Zeros '' -1 List of Complex Zeros
3 Gain 1.0 -1 Gain Factor
4 Fpass 1GHz 0 Passband Edge Frequency
5 StopType OPEN -2 Input is open or short for stopband
6 Z1 50ohm 1 Input Port Reference Impedance
7 Z2 50ohm 1 Output Port Reference Impedance
END_ELEMENT
LPF_Polynomial LPF_Polynomial 7
1 Numerator 1 -1 List of Numerator Coefficients
2 Denominator list(1,1.4,1) -1 List of Denominator Coefficients
3 Gain 1.0 -1 Gain Factor
4 Fpass 1GHz 0 Passband Edge Frequency
5 StopType OPEN -2 Input is open or short for stopband
6 Z1 50ohm 1 Input Port Reference Impedance
7 Z2 50ohm 1 Output Port Reference Impedance
END_ELEMENT
LPF_RaisedCos LPF_RaisedCos 9
1 Alpha 0.35 -1 Rolloff factor defining filters excess bandwidth, 0 <= Alpha <= 1
2 SymbolRate 24.3KHz 0 Digital symbol rate defining filters bandwidth
3 DelaySymbols 5 -1 Number of symbols delayed by the filter
4 Exponent 0.5 -1 Exponent Factor ( 0<= Exponent <= 1 )
5 DutyCycle 100 -1 Pulse duty cycle in percent, used for sinc(x) correction
6 SincE y_n0 -2 Yes for applying Exponent Factor on sinc(x) correction
7 Gain 1.0 -1 Gain Factor
8 Zout 50ohm 1 Output Impedance
9 WindowType 0 -1 Window Type, 0=None, 1=Hann, 2=Hamming
END_ELEMENT
LQ_Conn LQ_Conn 5
1 L 1.0nH 3 Inductance
2 Q 50.0 -1 Quality factor
3 F 100.0MHz 0 Reference frequency for q
4 Mode loss_freq -1 Loss Mode for This Device
5 Temp '' 12 Temperature
END_ELEMENT
LQ_Pad1 LQ_Pad1 8
1 L 1.0nH 3 Inductance
2 Q 50.0 -1 Quality factor
3 F 100.0MHz 0 Reference frequency for q
4 Mode loss_freq -1 Loss Mode for This Device
5 Temp '' 12 Temperature
6 W 25.0mils 5 W
7 S 10.0mils 5 S
8 L1 50.0mils 5 L
END_ELEMENT
LQ_Space LQ_Space 6
1 L 1.0nH 3 Inductance
2 Q 50.0 -1 Quality factor
3 F 100.0MHz 0 Reference frequency for q
4 Mode loss_freq -1 Loss Mode for This Device
5 Temp '' 12 Temperature
6 L1 50.0mils 5 L
END_ELEMENT
LSSP LSSP 48
1 MaxOrder 4 -1 Maximum combined order to be considered
2 Freq 1.0GHz 0 Frequency of fundamental
3 Order 3 -1 Maximum order of fundamental to be considered
4 NestLevel 2 -1 Levels of subcircuits to output
5 StatusLevel 2 -1 Degree of annotation
6 FundOversample 1 -1 Oversampling ratio for FFT
7 Oversample '' -1 Oversampling ratio for FFT (repeated)
8 PackFFT '' -1 Pack FFT in multi-tone analysis
9 MaxIters 10 -1 Max number of iterations
10 GuardThresh '' -1 Guard threshold
11 SamanskiiConstant 2 -1 Samanskii constant
12 Restart No -1 Do not use last solution as initial guess
13 ArcLevelMaxStep 0.0 -1 Maximum arc-length step for source-level continuation
14 MaxStepRatio 100 -1 Ratio of maximum to given number of steps
15 MaxShrinkage 1.0e-5 -1 Maximum step shrinkage
16 OutputAllSolns '' -1 Output spectra at all computed steps when sweeping
17 ArcMaxStep 0.0 -1 Maximum arc-length step
18 ArcMinValue '' -1 Minimum value for parameter during arclength continuation
19 ArcMaxValue '' -1 Maximum value for parameter during arclength continuation
20 UseKrylov '' -1 Use Krylov solver
21 UseInitialAWHB '' -1 Use initial AWHB stage before Krylov
22 AWHB_WindowSize '' -1 AWHB window size
23 GMRES_Restart '' -1 GMRES iterations before auto-restart
24 KrylovUsePacking '' -1 Use Krylov spectral packing
25 KrylovPackingThresh '' -1 Krylov bandwidth threshold
26 KrylovTightTol '' -1 GMRES tolerance
27 KrylovLooseTol '' -1 Loose tolerance for Krylov loop
28 KrylovLooseIters '' -1 Min number of iterations to invoke loose tolerance
29 KrylovMaxIters '' -1 Maximum number of GMRES iterations
30 GMRES_Orthog '' -1 Re-orthogonalize at every GMRES iteration
31 OutputBudgetIV '' -1 Output top-level pin currents and voltages
32 CalcS_Params Yes -1 Calculate large-signal S-params
33 LSSP_FreqAtPort '' 0 Frequency to calculate at port (repeatable)
34 SweepVar '' -1 Name of variable or parameter to be swept
35 UseSweepPlan '' -1 Flag to indicate use of SweepPlan
36 SweepPlan '' -1 SweepPlan instance path name for sweep values
37 Start 0 -1 Start value
38 Stop 100 -1 Stop value
39 Step 1 -1 Step value
40 Center '' -1 Center value
41 Span '' -1 Span
42 Lin '' -1 Linear sweep
43 Dec '' -1 Number of points per decade
44 Log '' -1 Log sweep
45 Reverse '' -1 Reverse sweep
46 Pt '' 0 Single point
47 Sort 'LINEAR START STEP' -1 Sort values
48 Other '' -1 Output string to netlist
END_ELEMENT
L_Conn L_Conn 1
1 L 1.0nH 3 Inductance
END_ELEMENT
L_Pad1 L_Pad1 4
1 L 1.0nH 3 Inductance
2 W 25.0mils 5 W
3 S 10.0mils 5 S
4 L1 50.0mils 5 L
END_ELEMENT
L_Space L_Space 2
1 L 1.0nH 3 Inductance
2 L1 50.0mils 5 L
END_ELEMENT
L_StabCircle L_StabCircle 1
1 Function list(our_l_stabcir=l_stab_circle(S,51)) -1 l_stab_circle(2x2 S_matrix,num_of_pts)
END_ELEMENT
LogACDemod LogACDemod 3
1 CurrentSlope 1.e-3 -1 Gradient of transfer characteristic in Amperes/decade
2 VoltIntercept 1.e-3V 9 Vin for zero output
3 Z1 50.ohm 1 Reference Impedance for Port1
END_ELEMENT
LogDC LogDC 3
1 VoltSlope 1.e-3 -1 Gradient of transfer characteristic in Volts/decade
2 VoltIntercept 1.e-3V 9 Vin for zero output
3 Z1 50.ohm 1 Reference Impedance for Port1
END_ELEMENT
LogSuccDetect LogSuccDetect 4
1 NumStages 5 -1 Number of stages
2 StageGain 10.dB 13 Gain per stage in dB
3 CurrentSlope 1.e-3 -1 Gradient of transfer characteristic in Amperes/decade
4 Z1 50.ohm 1 Reference Impedance for Port1
END_ELEMENT
LogTrue LogTrue 4
1 NumStages 5 -1 Number of stages
2 StageGain 10.dB 13 Gain per stage in dB
3 VoltLimit 1.V 9 Limiting voltage of each stage
4 Z1 50.ohm 1 Reference Impedance for Port1
END_ELEMENT
MACLIN MACLIN 10
1 Subst MSub1 -1 Substrate instance name
2 W1 25.0mils 5 Width of conductor 1
3 W2 10.0mils 5 Width of conductor 2
4 S 5.0mils 5 Conductor spacing
5 L 100.0mils 5 Conductor length
6 Temp '' 12 Physical temperature
7 WA 10.0mils 5 (for Layout option) Width of line that connects to pin 1
8 WB 10.0mils 5 (for Layout option) Width of line that connects to pin 2
9 WC 10.0mils 5 (for Layout option) Width of line that connects to pin 3
10 WD 10.0mils 5 (for Layout option) Width of line that connects to pin 4
END_ELEMENT
MACLIN3 MACLIN3 12
1 Subst MSub1 -1 Substrate instance name
2 W1 25.0mils 5 Width of conductor 1
3 W2 15.0mils 5 Width of conductor 2
4 W3 15.0mils 5 Width of conductor 3
5 S1 8.0mils 5 Spacing between conductors 1 and 2
6 S2 12.0mils 5 Spacing between conductors 2 and 3
7 L 100.0mils 5 Conductor length
8 Temp '' 12 Physical temperature
9 WA 10.0mils 5 (for Layout option) Width of line that connects to pin 1
10 WB 10.0mils 5 (for Layout option) Width of line that connects to pin 3
11 WC 10.0mils 5 (for Layout option) Width of line that connects to pin 4
12 WD 10.0mils 5 (for Layout option) Width of line that connects to pin 6
END_ELEMENT
MBEND MBEND 5
1 Subst MSub1 -1 Substrate instance name
2 W 25.0mils 5 Conductor width
3 Angle 90deg 7 Angle of bend
4 M 0.6 -1 Miter fraction
5 Temp '' 12 Physical temperature
6 AutomaticWidth 'Disabled' -1
END_ELEMENT
MBEND2 MBEND2 3
1 Subst MSub1 -1 Substrate instance name
2 W 25.0mils 5 Conductor width
3 Temp '' 12 Physical temperature
6 AutomaticWidth 'Disabled' -1
END_ELEMENT
MBEND3 MBEND3 3
1 Subst MSub1 -1 Substrate instance name
2 W 25.0mils 5 Conductor width
3 Temp '' 12 Physical temperature
6 AutomaticWidth 'Disabled' -1
END_ELEMENT
MBSTUB MBSTUB 6
1 Subst MSub1 -1 Substrate instance name
2 W 25.0mils 5 Width of feed line
3 Ro 60.0mils 5 Outer radius of circular sector
4 Angle 60deg 7 Angle subtended by circular sector
5 D 3.0mils 5 Insertion depth of circular sector in feed line
6 Temp '' 12 Physical temperature
END_ELEMENT
MCFIL MCFIL 7
1 Subst MSub1 -1 Substrate instance name
2 W 25.0mils 5 Line width
3 S 10.0mils 5 Spacing between lines
4 L 100.0mils 5 Line length
5 Temp '' 12 Physical temperature
6 W1 20.0mils 5 (for Layout option) Width of line that connects to pin 1
7 W2 20.0mils 5 (for Layout option) Width of line that connects to pin 2
END_ELEMENT
MCLIN MCLIN 9
1 Subst MSub1 -1 Substrate instance name
2 W 25.0mils 5 Line width
3 S 10.0mils 5 Spacing between lines
4 L 100.0mils 5 Line length
5 Temp '' 12 Physical temperature
6 W1 20.0mils 5 (for Layout option) Width of line that connects to pin 1
7 W2 20.0mils 5 (for Layout option) Width of line that connects to pin 2
8 W3 20.0mils 5 (for Layout option) Width of line that connects to pin 3
9 W4 20.0mils 5 (for Layout option) Width of line that connects to pin 4
END_ELEMENT
MCORN MCORN 3
1 Subst MSub1 -1 Substrate instance name
2 W 25.0mils 5 Conductor width
3 Temp '' 12 Physical temperature
4 AutomaticWidth 'Disabled' -1
END_ELEMENT
MCROS MCROS 5
1 Subst MSub1 -1 Substrate instance name
2 W1 25.0mils 5 Conductor width at pin 1
3 W2 50.0mils 5 Conductor width at pin 2
4 W3 25.0mils 5 Conductor width at pin 3
5 W4 50.0mils 5 Conductor width at pin 4
6 AutomaticWidth 'Disabled' -1
END_ELEMENT
MCROSO MCROSO 6
1 Subst MSub1 -1 Substrate instance name
2 W1 25.0mils 5 Conductor width at pin 1
3 W2 50.0mils 5 Conductor width at pin 2
4 W3 25.0mils 5 Conductor width at pin 3
5 W4 50.0mils 5 Conductor width at pin 4
6 Temp '' 12 Physical temperature
END_ELEMENT
MCURVE MCURVE 5
1 Subst MSub1 -1 Substrate instance name
2 W 25.0mils 5 Conductor width
3 Angle 90deg 7 Angle subtended by the bend
4 Radius 100.0mils 5 Radius (measured to strip centerline)
5 Temp '' 12 Physical temperature
6 AutomaticWidth 'Disabled' -1
END_ELEMENT
MCURVE2 MCURVE2 6
1 Subst MSub1 -1 Substrate instance name
2 W 25.0mils 5 Conductor width
3 Angle 90deg 7 Angle of bend
4 Radius 100.0mils 5 Radius (measured to strip centerline)
5 Nmode 2 -1 Number of modes
6 Temp '' 12 Physical temperature
7 AutomaticWidth 'Disabled' -1
END_ELEMENT
MEANDER_FINAL MEANDER_FINAL 25
1 N 0 -1 Number of points (not including mousepoint)
2 W 10.0mils 5 Width of meander line
3 Subst MSub1 -1 Substrate
4 Layer smt_cond -1 Layer
5 X0 0mils 5 XOrigin of (U,V) -- not used in shape directly
6 Y0 0mils 5 YOrigin of (U,V) -- not used in shape directly
7 AbsA 0deg 7 Angle CCW of positive U axis with positive X axis -- not used in shape directly
8 A 0deg 7 Angle CCW between shape and PA's port angle
9 CType 0 -1 0=Mitre, 1=Radius, 2=Corner, 3=Free radius
10 MP 30 -1 Mitre percentage
11 R 5.0mils 5 Circle endpoint radius
12 PA '' -2 Name of pin attached to the start of this meander line -- not used in shape directly
13 PB '' -2 Name of pin attached to the end of this meander line -- not used in shape directly
14 StripType MICROSTRIP -1 Type; can be MICROSTRIP or STRIPLINE
15 FixedLength 0mils 5 Placeholder for returned fixed length generated during shape calc
16 MovableLength 0mils 5 Placeholder for returned movable length generated during shape calc
17 RF_REGION '' -2 Region placeholder
18 RF_MEANDER_VERSION rfc7 -2 Version number placeholder
19 RF_MEANDER_ID '' -2 Meander ID placeholder
20 'Meander Type' 0 -1 0=meander line, 1=path, 2=polygon, 3=polyline, 4=circle
21 npts 0 -1 Number of points around the periphery
22 npts_cl 0 -1 Number of points on the centerline
23 Clearance 0mils 5 Placeholder for MEANDER_MOVABLE_CLR
24 MAngle -1deg 7 Region angle when meander is added
25 TotalFixedLength 0mils 5 Placeholder for returned fixed length generated during shape calc
END_ELEMENT
MEANDER_FIXED MEANDER_FIXED 15
1 N 0 -1 Number of points (not including mousepoint)
2 W 10.0mils 5 Width of meander line
3 Subst MSub1 -1 Substrate
4 Layer smt_cond -1 Layer
5 X0 0mils 5 XOrigin of (U,V) -- not used in shape directly
6 Y0 0mils 5 YOrigin of (U,V) -- not used in shape directly
7 AbsA 0deg 7 Angle CCW of positive U axis with positive X axis -- not used in shape directly
8 A 0deg 7 Angle CCW between shape and PA's port angle
9 CType 0 -1 0=mitre, 1=circle, 2=square
10 MP 30 -1 Mitre percentage
11 R 5.0mils 5 Circle endpoint radius
12 PA '' -1 Name of pin attached to the start of this meander line -- not used in shape directly
13 PB '' -1 Name of pin attached to the end of this meander line -- not used in shape directly
14 StripType MICROSTRIP -1 Type; can be MICROSTRIP, PCBTRACE, or STRIPLINE
15 FixedLength 0mils 5 Placeholder for returned fixed length generated during shape calc
16 TotalFixedLength 0mils 5 Placeholder for returned fixed length generated during shape calc
END_ELEMENT
MEANDER_MOVABLE MEANDER_MOVABLE 16
1 N 0 -1 Number of points (not including mousepoint)
2 W 10.0mils 5 Width of meander line
3 Subst MSub1 -1 Substrate
4 Layer smt_cond -1 Layer
5 X0 0mils 5 XOrigin of (U,V) -- not used in shape directly
6 Y0 0mils 5 YOrigin of (U,V) -- not used in shape directly
7 AbsA 0deg 7 Angle CCW of positive U axis with positive X axis -- not used in shape directly
8 A 0deg 7 Angle CCW between shape and PA's port angle
9 CType 0 -1 0=mitre, 1=circle, 2=square
10 MP 30 -1 Mitre percentage
11 R 5.0mils 5 Circle endpoint radius
12 PA '' -1 Name of pin attached to the start of this meander line -- not used in shape directly
13 PB '' -1 Name of pin attached to the end of this meander line -- not used in shape directly
14 StripType MICROSTRIP -1 Type; can be MICROSTRIP, PCBTRACE, or STRIPLINE
15 MovableLength 0mils 5 Placeholder for returned movable length generated during shape calc
16 Clearance 0mils 5 Placeholder for MEANDER_MOVABLE_CLR
END_ELEMENT
MEANDER_MOVABLE_CLR MEANDER_MOVABLE_CLR 16
1 N 0 -1 Number of points (not including mousepoint)
2 W 10.0mils 5 Width of meander line
3 Subst MSub1 -1 Substrate
4 Layer smt_cond -1 Layer
5 X0 0mils 5 XOrigin of (U,V) -- not used in shape directly
6 Y0 0mils 5 YOrigin of (U,V) -- not used in shape directly
7 AbsA 0deg 7 Angle CCW of positive U axis with positive X axis -- not used in shape directly
8 A 0deg 7 Angle CCW between shape and PA's port angle
9 CType 0 -1 0=mitre, 1=circle, 2=square
10 MP 30 -1 Mitre percentage
11 R 5.0mils 5 Circle endpoint radius
12 PA '' -1 Name of pin attached to the start of this meander line -- not used in shape directly
13 PB '' -1 Name of pin attached to the end of this meander line -- not used in shape directly
14 StripType MICROSTRIP -1 Type; can be MICROSTRIP, PCBTRACE, or STRIPLINE
15 MovableLength 0mils 5 Placeholder for returned movable length generated during shape calc
16 Clearance 0mils 5 Placeholder for MEANDER_MOVABLE_CLR
END_ELEMENT
MEXTRAM_Model MEXTRAM_Model 71
1 NPN y_n1 -1 Model Type - YES or NO
2 PNP y_n0 -1 Model Type - YES or NO
3 Release 503 -1 Selection of MEXTRAM Release 503, 504, 505
4 Exmod yes -1 Flag for Extended Modeling of the Reverse Current Gain
5 Exphi yes -1 Flag for Distributed High Frequency Effects in Transient
6 Exavl yes -1 Flag of Extended Modeling of Avalanche Currents
7 Is '' -1 Collector-Emitter Saturation Current, A/m^2
8 Bf '' -1 Ideal Forward Current Gain
9 Xibi '' -1 Fraction of Ideal Base Current that belongs to the Sidewall
10 Ibf '' -1 Saturation Current of the Non-Ideal Forward Base Current, A/m^2
11 Vlf '' 9 Cross-Over Voltage of the Non-Ideal Forward Base Current, V
12 Ik '' -1 High Injection Knee Current, A/m^2
13 Bri '' -1 Ideal Reverse Current Gain
14 Ibr '' -1 Saturation Current of the Non-Ideal Reverse Base Current, A/m^2
15 Vlr '' 9 Cross-Over Voltage of the Non-Ideal Reverse Base Current, V
16 Xext '' -1 Part that depends on the Base-Collector Voltage Vbc1
17 Qb0 '' -1 Base Charge at Zero Bias
18 Eta '' -1 Factor of the Built-in Field of the Base
19 Avl '' -1 Weak Avalanche Parameter
20 Efi '' -1 Electric Field Intercep
21 Ihc '' -1 Critial Current for Hot Carriers, A/m^2
22 Rcc '' 1 Constant Part of the Collector Resistance, Ohms/m^2
23 Rcv '' 1 RCV Resistance of the Unmodulated Epilayer, Ohms/m^2
24 Scrcv '' 1 Space Charge Resistance of the Epilayer, Ohms/m^2
25 Sfh '' -1 Current Spreading Factor Epilayer
26 Rbc '' 1 Constant Part of the Base Resistance, Ohms/m^2
27 Rbv '' 1 Variable Part of the Base Resistance, Ohms/m^2
28 Re '' 1 Emitter Resistance, Ohms/m^2
29 Taune '' 6 Minimum Delay Time of Neutral and Emitter Charge, S
30 Mtau '' -1 Non-Ideality Factor of the Neutral and Emitter Charge, S
31 Cje '' 4 B-E Zero-bias Junction Cap., F/m^2
32 Vde '' 9 B-E Diffusion Voltage, V
33 Pe '' -1 B-E Grading Coefficient
34 Xcje '' -1 Fraction of B-E Capacitance that belongs to the Sidewall
35 Cjc '' 4 B-C Zero-bias Junction Cap., F/m^2
36 Vdc '' 9 B-C Diffusion Voltage, V
37 Pc '' -1 B-C Grading Coefficient
38 Xp '' -1 Constant Part of Cjc
39 Mc '' -1 Collector Current Modulation Coefficient
40 Xcjc '' -1 Fraction of B-C Capacitance Under the Emitter Area
41 Tref '' 12 Reference Temperature, C
42 Dta '' 12 Difference of the Device Temperature and the Ambient Temperature, C
43 Vge '' 9 Emitter Band-Gap Voltage, eV
44 Vgb '' 9 Base Band-Gap Voltage, eV
45 Vgc '' 9 Collector Band-Gap Voltage, eV
46 Vgj '' 9 Recombination E-B Junction Band-Gap Voltage, eV
47 Vi '' 9 Ionization Voltage Base Dope, V
48 Na '' -1 Maximum Base Dope Concentration
49 Er '' -1 Temperature Coefficient of Vlf and Vlr
50 Ab '' -1 Temperature Coefficient Resistivity Base
51 Aepi '' -1 Temperature Coefficient Resistivity of the Epilayer
52 Aex '' -1 Temperature Coefficient Resistivity of the Extrinsic Base
53 Ac '' -1 Temperature Coefficient Resistivity of the Buried Layer
54 Kf '' -1 Flicker Noise Coefficient Ideal Base Current
55 Kfn '' -1 Flicker Noise Coefficient Non-Ideal Base Current
56 Af '' -1 Flicker Noise Exponent
57 Iss '' -1 Base-Substrate Saturation Current, A/m^2
58 Iks '' -1 Knee Substrate Current, A/m^2
59 Cjs '' 4 C-S Zero-bias Junction Cap., F/m^2
60 Vds '' 9 C-S Diffusion Voltage, V
61 Ps '' -1 C-S Grading Coefficient
62 Vgs '' 9 Substrate Band-Gap Voltage, V
63 As '' -1 For Closed/Open Buried Layer
64 wVsubfwd '' 9 Substrate Junction Forward Bias (warning), V
65 wBvsub '' 9 Substrate Junction Reverse Breakdown Voltage (warning), V
66 wBvbe '' 9 Base-Emitter Reverse Breakdown Voltage (warning), V
67 wBvbc '' 9 Base-Collector Reverse Breakdown Voltage (warning), V
68 wVbcfwd '' 9 Base-Collector Forward Bias (warning), V
69 wIbmax '' 10 Maximum Base Current (warning), A
70 wIcmax '' 10 Maximum Collector Current (warning), A
71 wPmax '' 8 Maximum Power Dissipation (warning), W
END_ELEMENT
MGAP MGAP 4
1 Subst MSub1 -1 Substrate instance name
2 W 25.0mils 5 Conductor width
3 S 10.0mils 5 Length of gap (spacing)
4 Temp '' 12 Physical temperature
5 AutomaticWidth 'Disabled' -1
END_ELEMENT
MICAP1 MICAP1 9
1 Subst MSub1 -1 Substrate instance name
2 W 5.0mils 5 Finger width
3 G 5.0mils 5 Gap between fingers
4 Ge 5.0mils 5 Gap at end of fingers
5 L 50.0mils 5 Length of overlapped region
6 Np 3 -1 Number of finger pairs
7 Wt 25.0mils 5 Width of the interconnect
8 Wf 25.0mils 5 Width of the feed line
9 Temp '' 12 Physical temperature
END_ELEMENT
MICAP2 MICAP2 8
1 Subst MSub1 -1 Substrate instance name
2 W 5.0mils 5 Finger width
3 G 5.0mils 5 Gap between fingers
4 Ge 5.0mils 5 Gap at end of fingers
5 L 50.0mils 5 Length of overlapped region
6 Np 3 -1 Number of finger pairs
7 Wt 25.0mils 5 Width of the interconnect
8 Temp '' 12 Physical temperature
END_ELEMENT
MICAP3 MICAP3 9
1 Subst MSub1 -1 Substrate instance name
2 W 5.0mils 5 Finger width
3 G 5.0mils 5 Gap between fingers
4 Ge 5.0mils 5 Gap at end of fingers
5 L 50.0mils 5 Length of overlapped region
6 Np 3 -1 Number of finger pairs
7 Wt 25.0mils 5 Width of the interconnect
8 Wf 25.0mils 5 Width of the feed line
9 Temp '' 12 Physical temperature
END_ELEMENT
MICAP4 MICAP4 8
1 Subst MSub1 -1 Substrate instance name
2 W 5.0mils 5 Finger width
3 G 5.0mils 5 Gap between fingers
4 Ge 5.0mils 5 Gap at end of fingers
5 L 50.0mils 5 Length of overlapped region
6 Np 3 -1 Number of finger pairs
7 Wt 25.0mils 5 Width of the interconnect
8 Temp '' 12 Physical temperature
END_ELEMENT
ML10CTL_V ML10CTL_V 31
1 Subst Subst1 -1 Substrate
2 Length 100mils 5 Length
3 W[1] 10mils 5 Width
4 S[1] 5mils 5 Width
5 W[2] 10mils 5 Width
6 S[2] 5mils 5 Width
7 W[3] 10mils 5 Width
8 S[3] 5mils 5 Width
9 W[4] 10mils 5 Width
10 S[4] 5mils 5 Width
11 W[5] 10mils 5 Width
12 S[5] 5mils 5 Width
13 W[6] 10mils 5 Width
14 S[6] 5mils 5 Width
15 W[7] 10mils 5 Width
16 S[7] 5mils 5 Width
17 W[8] 10mils 5 Width
18 S[8] 5mils 5 Width
19 W[9] 10mils 5 Width
20 S[9] 5mils 5 Width
21 W[10] 10mils 5 Width
22 Layer[1] 1 -2 Layer 1
23 Layer[2] 1 -2 Layer 2
24 Layer[3] 1 -2 Layer 3
25 Layer[4] 1 -2 Layer 4
26 Layer[5] 1 -2 Layer 5
27 Layer[6] 1 -2 Layer 6
28 Layer[7] 1 -2 Layer 7
29 Layer[8] 1 -2 Layer 8
30 Layer[9] 1 -2 Layer 9
31 Layer[10] 1 -2 Layer 10
END_ELEMENT
ML16CTL_C ML16CTL_C 5
1 Subst Subst1 -1 Substrate
2 Length 100mils 5 Length
3 W 10mils 5 Width
4 S 5mils 5 Spacing
5 Layer 1 -2 Layer
END_ELEMENT
ML1CTL_C ML1CTL_C 4
1 Subst Subst1 -1 Substrate
2 Length 100mils 5 Length
3 W 10mils 5 Width
4 Layer 1 -2 Layer
END_ELEMENT
ML2CTL_C ML2CTL_C 5
1 Subst Subst1 -1 Substrate
2 Length 100mils 5 Length
3 W 10mils 5 Width
4 S 5mils 5 Spacing
5 Layer 1 -2 Layer
END_ELEMENT
ML2CTL_V ML2CTL_V 7
1 Subst Subst1 -1 Substrate
2 Length 100mils 5 Length
3 W[1] 10mils 5 Width
4 S[1] 5mils 5 Width
5 W[2] 10mils 5 Width
6 Layer[1] 1 -2 Layer 1
7 Layer[2] 1 -2 Layer 2
END_ELEMENT
ML3CTL_C ML3CTL_C 5
1 Subst Subst1 -1 Substrate
2 Length 100mils 5 Length
3 W 10mils 5 Width
4 S 5mils 5 Spacing
5 Layer 1 -2 Layer
END_ELEMENT
ML3CTL_V ML3CTL_V 10
1 Subst Subst1 -1 Substrate
2 Length 100mils 5 Length
3 W[1] 10mils 5 Width
4 S[1] 5mils 5 Width
5 W[2] 10mils 5 Width
6 S[2] 5mils 5 Width
7 W[3] 10mils 5 Width
8 Layer[1] 1 -2 Layer 1
9 Layer[2] 1 -2 Layer 2
10 Layer[3] 1 -2 Layer 3
END_ELEMENT
ML4CTL_C ML4CTL_C 5
1 Subst Subst1 -1 Substrate
2 Length 100mils 5 Length
3 W 10mils 5 Width
4 S 5mils 5 Spacing
5 Layer 1 -2 Layer
END_ELEMENT
ML4CTL_V ML4CTL_V 13
1 Subst Subst1 -1 Substrate
2 Length 100mils 5 Length
3 W[1] 10mils 5 Width
4 S[1] 5mils 5 Width
5 W[2] 10mils 5 Width
6 S[2] 5mils 5 Width
7 W[3] 10mils 5 Width
8 S[3] 5mils 5 Width
9 W[4] 10mils 5 Width
10 Layer[1] 1 -2 Layer 1
11 Layer[2] 1 -2 Layer 2
12 Layer[3] 1 -2 Layer 3
13 Layer[4] 1 -2 Layer 4
END_ELEMENT
ML5CTL_C ML5CTL_C 5
1 Subst Subst1 -1 Substrate
2 Length 100mils 5 Length
3 W 10mils 5 Width
4 S 5mils 5 Spacing
5 Layer 1 -2 Layer
END_ELEMENT
ML5CTL_V ML5CTL_V 16
1 Subst Subst1 -1 Substrate
2 Length 100mils 5 Length
3 W[1] 10mils 5 Width
4 S[1] 5mils 5 Width
5 W[2] 10mils 5 Width
6 S[2] 5mils 5 Width
7 W[3] 10mils 5 Width
8 S[3] 5mils 5 Width
9 W[4] 10mils 5 Width
10 S[4] 5mils 5 Width
11 W[5] 5mils 5 Width
12 Layer[1] 1 -2 Layer 1
13 Layer[2] 1 -2 Layer 2
14 Layer[3] 1 -2 Layer 3
15 Layer[4] 1 -2 Layer 4
16 Layer[5] 1 -2 Layer 5
END_ELEMENT
ML6CTL_C ML6CTL_C 5
1 Subst Subst1 -1 Substrate
2 Length 100mils 5 Length
3 W 10mils 5 Width
4 S 5mils 5 Spacing
5 Layer 1 -2 Layer
END_ELEMENT
ML6CTL_V ML6CTL_V 19
1 Subst Subst1 -1 Substrate
2 Length 100mils 5 Length
3 W[1] 10mils 5 Width
4 S[1] 5mils 5 Width
5 W[2] 10mils 5 Width
6 S[2] 5mils 5 Width
7 W[3] 10mils 5 Width
8 S[3] 5mils 5 Width
9 W[4] 10mils 5 Width
10 S[4] 5mils 5 Width
11 W[5] 10mils 5 Width
12 S[5] 5mils 5 Width
13 W[6] 10mils 5 Width
14 Layer[1] 1 -2 Layer 1
15 Layer[2] 1 -2 Layer 2
16 Layer[3] 1 -2 Layer 3
17 Layer[4] 1 -2 Layer 4
18 Layer[5] 1 -2 Layer 5
19 Layer[6] 1 -2 Layer 6
END_ELEMENT
ML7CTL_C ML7CTL_C 5
1 Subst Subst1 -1 Substrate
2 Length 100mils 5 Length
3 W 10mils 5 Width
4 S 5mils 5 Spacing
5 Layer 1 -2 Layer
END_ELEMENT
ML7CTL_V ML7CTL_V 22
1 Subst Subst1 -1 Substrate
2 Length 100mils 5 Length
3 W[1] 10mils 5 Width
4 S[1] 5mils 5 Width
5 W[2] 10mils 5 Width
6 S[2] 10mils 5 Width
7 W[3] 10mils 5 Width
8 S[3] 5mils 5 Width
9 W[4] 10mils 5 Width
10 S[4] 5mils 5 Width
11 W[5] 10mils 5 Width
12 S[5] 5mils 5 Width
13 W[6] 10mils 5 Width
14 S[6] 5mils 5 Width
15 W[7] 10mils 5 Width
16 Layer[1] 1 -2 Layer 1
17 Layer[2] 1 -2 Layer 2
18 Layer[3] 1 -2 Layer 3
19 Layer[4] 1 -2 Layer 4
20 Layer[5] 1 -2 Layer 5
21 Layer[6] 1 -2 Layer 6
22 Layer[7] 1 -2 Layer 7
END_ELEMENT
ML8CTL_C ML8CTL_C 5
1 Subst Subst1 -1 Substrate
2 Length 100mils 5 Length
3 W 10mils 5 Width
4 S 5mils 5 Spacing
5 Layer 1 -2 Layer
END_ELEMENT
ML8CTL_V ML8CTL_V 25
1 Subst Subst1 -1 Substrate
2 Length 100mils 5 Length
3 W[1] 10mils 5 Width
4 S[1] 5mils 5 Width
5 W[2] 10mils 5 Width
6 S[2] 5mils 5 Width
7 W[3] 10mils 5 Width
8 S[3] 5mils 5 Width
9 W[4] 10mils 5 Width
10 S[4] 5mils 5 Width
11 W[5] 10mils 5 Width
12 S[5] 5mils 5 Width
13 W[6] 10mils 5 Width
14 S[6] 5mils 5 Width
15 W[7] 10mils 5 Width
16 S[7] 5mils 5 Width
17 W[8] 10mils 5 Width
18 Layer[1] 1 -2 Layer 1
19 Layer[2] 1 -2 Layer 2
20 Layer[3] 1 -2 Layer 3
21 Layer[4] 1 -2 Layer 4
22 Layer[5] 1 -2 Layer 5
23 Layer[6] 1 -2 Layer 6
24 Layer[7] 1 -2 Layer 7
25 Layer[8] 1 -2 Layer 8
END_ELEMENT
ML9CTL_V ML9CTL_V 28
1 Subst Subst1 -1 Substrate
2 Length 100mils 5 Length
3 W[1] 10mils 5 Width
4 S[1] 5mils 5 Width
5 W[2] 10mils 5 Width
6 S[2] 5mils 5 Width
7 W[3] 10mils 5 Width
8 S[3] 5mils 5 Width
9 W[4] 10mils 5 Width
10 S[4] 5mils 5 Width
11 W[5] 10mils 5 Width
12 S[5] 5mils 5 Width
13 W[6] 10mils 5 Width
14 S[6] 5mils 5 Width
15 W[7] 10mils 5 Width
16 S[7] 5mils 5 Width
17 W[8] 10mils 5 Width
18 S[8] 5mils 5 Width
19 W[9] 10mils 5 Width
20 Layer[1] 1 -2 Layer 1
21 Layer[2] 1 -2 Layer 2
22 Layer[3] 1 -2 Layer 3
23 Layer[4] 1 -2 Layer 4
24 Layer[5] 1 -2 Layer 5
25 Layer[6] 1 -2 Layer 6
26 Layer[7] 1 -2 Layer 7
27 Layer[8] 1 -2 Layer 8
28 Layer[9] 1 -2 Layer 9
END_ELEMENT
MLACRNR1 MLACRNR1 4
1 Subst Subst1 -1 Substrate
2 W1 10mils 5 Width
3 W2 10mils 5 Width
4 Layer 1 -2 Layer
END_ELEMENT
MLACRNR16 MLACRNR16 6
1 Subst Subst1 -1 Substrate
2 W1 10mils 5 Width
3 S1 5mils 5 Width
4 W2 10mils 5 Width
5 S2 15mils 5 Width
6 Layer 1 -2 Layer
END_ELEMENT
MLACRNR2 MLACRNR2 6
1 Subst Subst1 -1 Substrate
2 W1 10mils 5 Width
3 S1 5mils 5 Width
4 W2 10mils 5 Width
5 S2 15mils 5 Width
6 Layer 1 -2 Layer
END_ELEMENT
MLACRNR3 MLACRNR3 6
1 Subst Subst1 -1 Substrate
2 W1 10mils 5 Width
3 S1 5mils 5 Width
4 W2 10mils 5 Width
5 S2 15mils 5 Width
6 Layer 1 -2 Layer
END_ELEMENT
MLACRNR4 MLACRNR4 6
1 Subst Subst1 -1 Substrate
2 W1 10mils 5 Width
3 S1 5mils 5 Width
4 W2 10mils 5 Width
5 S2 15mils 5 Width
6 Layer 1 -2 Layer
END_ELEMENT
MLACRNR5 MLACRNR5 6
1 Subst Subst1 -1 Substrate
2 W1 10mils 5 Width
3 S1 5mils 5 Width
4 W2 10mils 5 Width
5 S2 15mils 5 Width
6 Layer 1 -2 Layer
END_ELEMENT
MLACRNR6 MLACRNR6 6
1 Subst Subst1 -1 Substrate
2 W1 10mils 5 Width
3 S1 5mils 5 Width
4 W2 10mils 5 Width
5 S2 15mils 5 Width
6 Layer 1 -2 Layer
END_ELEMENT
MLACRNR7 MLACRNR7 6
1 Subst Subst1 -1 Substrate
2 W1 10mils 5 Width
3 S1 5mils 5 Width
4 W2 10mils 5 Width
5 S2 15mils 5 Width
6 Layer 1 -2 Layer
END_ELEMENT
MLACRNR8 MLACRNR8 6
1 Subst Subst1 -1 Substrate
2 W1 10mils 5 Width
3 S1 5mils 5 Width
4 W2 10mils 5 Width
5 S2 15mils 5 Width
6 Layer 1 -2 Layer
END_ELEMENT
MLANG MLANG 6
1 Subst MSub1 -1 Substrate instance name
2 W 10.0mils 5 Conductor width
3 S 10.0mils 5 Conductor spacing
4 L 100.0mils 5 Conductor length
5 Temp '' 12 Physical temperature
6 W1 25.0mils 5 (for Layout option) Width of transmission line that connect to pins 1,2,3,4
END_ELEMENT
MLANG6 MLANG6 6
1 Subst MSub1 -1 Substrate instance name
2 W 10.0mils 5 Conductor width
3 S 10.0mils 5 Conductor spacing
4 L 100.0mils 5 Conductor length
5 Temp '' 12 Physical temperature
6 W1 25.0mils 5 (for Layout option) Width of transmission line that connect to pins 1,2,3,4
END_ELEMENT
MLANG8 MLANG8 6
1 Subst MSub1 -1 Substrate instance name
2 W 10.0mils 5 Conductor width
3 S 10.0mils 5 Conductor spacing
4 L 100.0mils 5 Conductor length
5 Temp '' 12 Physical temperature
6 W1 25.0mils 5 (for Layout option) Width of transmission line that connect to pins 1,2,3,4
END_ELEMENT
MLCLE MLCLE 4
1 Subst Subst1 -1 Substrate
2 DiamClear 15mils 5 Diameter of Clearance
3 DiamPad 5mils 5 Diameter of Pad
4 Layer 2 -2 Layer
END_ELEMENT
MLCRNR1 MLCRNR1 4
1 Subst Subst1 -1 Substrate
2 Angle 90deg 7 Angle
3 W 10mils 5 Width
4 Layer 1 -2 Layer
END_ELEMENT
MLCRNR16 MLCRNR16 5
1 Subst Subst1 -1 Substrate
2 Angle 90deg 7 Angle
3 W 10mils 5 Width
4 S 5mils 5 Spacing
5 Layer 1 -2 Layer
END_ELEMENT
MLCRNR2 MLCRNR2 5
1 Subst Subst1 -1 Substrate
2 Angle 90deg 7 Angle
3 W 10mils 5 Width
4 S 5mils 5 Spacing
5 Layer 1 -2 Layer
END_ELEMENT
MLCRNR3 MLCRNR3 5
1 Subst Subst1 -1 Substrate
2 Angle 90deg 7 Angle
3 W 10mils 5 Width
4 S 5mils 5 Spacing
5 Layer 1 -2 Layer
END_ELEMENT
MLCRNR4 MLCRNR4 5
1 Subst Subst1 -1 Substrate
2 Angle 90deg 7 Angle
3 W 10mils 5 Width
4 S 5mils 5 Spacing
5 Layer 1 -2 Layer
END_ELEMENT
MLCRNR5 MLCRNR5 5
1 Subst Subst1 -1 Substrate
2 Angle 90deg 7 Angle
3 W 10mils 5 Width
4 S 5mils 5 Spacing
5 Layer 1 -2 Layer
END_ELEMENT
MLCRNR6 MLCRNR6 5
1 Subst Subst1 -1 Substrate
2 Angle 90deg 7 Angle
3 W 10mils 5 Width
4 S 5mils 5 Spacing
5 Layer 1 -2 Layer
END_ELEMENT
MLCRNR7 MLCRNR7 5
1 Subst Subst1 -1 Substrate
2 Angle 90deg 7 Angle
3 W 10mils 5 Width
4 S 5mils 5 Spacing
5 Layer 1 -2 Layer
END_ELEMENT
MLCRNR8 MLCRNR8 5
1 Subst Subst1 -1 Substrate
2 Angle 90deg 7 Angle
3 W 10mils 5 Width
4 S 5mils 5 Spacing
5 Layer 1 -2 Layer
END_ELEMENT
MLCROSSOVER1 MLCROSSOVER1 5
1 Subst Subst1 -1 Substrate
2 W_Top 10mils 5 Width
3 W_Bottom 10mils 5 Width
4 LayerTop 1 -2 Layer
5 LayerBottom 2 -1 Layer
END_ELEMENT
MLCROSSOVER2 MLCROSSOVER2 7
1 Subst Subst1 -1 Substrate
2 W_Top 10mils 5 Width
3 W_Bottom 10mils 5 Width
4 S_Top 10mils 5 Width
5 S_Bottom 10mils 5 Width
6 LayerTop 1 -2 Layer
7 LayerBottom 2 -1 Layer
END_ELEMENT
MLCROSSOVER3 MLCROSSOVER3 7
1 Subst Subst1 -1 Substrate
2 W_Top 10mils 5 Width
3 W_Bottom 10mils 5 Width
4 S_Top 10mils 5 Width
5 S_Bottom 10mils 5 Width
6 LayerTop 1 -2 Layer
7 LayerBottom 2 -1 Layer
END_ELEMENT
MLCROSSOVER4 MLCROSSOVER4 7
1 Subst Subst1 -1 Substrate
2 W_Top 10mils 5 Width
3 W_Bottom 10mils 5 Width
4 S_Top 10mils 5 Width
5 S_Bottom 10mils 5 Width
6 LayerTop 1 -2 Layer
7 LayerBottom 2 -1 Layer
END_ELEMENT
MLCROSSOVER5 MLCROSSOVER5 7
1 Subst Subst1 -1 Substrate
2 W_Top 10mils 5 Width
3 W_Bottom 10mils 5 Width
4 S_Top 10mils 5 Width
5 S_Bottom 10mils 5 Width
6 LayerTop 1 -2 Layer
7 LayerBottom 2 -1 Layer
END_ELEMENT
MLCROSSOVER6 MLCROSSOVER6 7
1 Subst Subst1 -1 Substrate
2 W_Top 10mils 5 Width
3 W_Bottom 10mils 5 Width
4 S_Top 10mils 5 Width
5 S_Bottom 10mils 5 Width
6 LayerTop 1 -2 Layer
7 LayerBottom 2 -1 Layer
END_ELEMENT
MLCROSSOVER7 MLCROSSOVER7 7
1 Subst Subst1 -1 Substrate
2 W_Top 10mils 5 Width
3 W_Bottom 10mils 5 Width
4 S_Top 10mils 5 Width
5 S_Bottom 10mils 5 Width
6 LayerTop 1 -2 Layer
7 LayerBottom 2 -1 Layer
END_ELEMENT
MLCROSSOVER8 MLCROSSOVER8 7
1 Subst Subst1 -1 Substrate
2 W_Top 10mils 5 Width
3 W_Bottom 10mils 5 Width
4 S_Top 10mils 5 Width
5 S_Bottom 10mils 5 Width
6 LayerTop 1 -2 Layer
7 LayerBottom 2 -1 Layer
END_ELEMENT
MLEF MLEF 6
1 Subst MSub1 -1 Substrate instance name
2 W 25.0mils 5 Line width
3 L 100.0mils 5 Line length
4 Wall1 '' 5 Distance to 1st sidewall
5 Wall2 '' 5 Distance to 2nd sidewall
6 Temp '' 12 Physical temperature
END_ELEMENT
MLIN MLIN 6
1 Subst MSub1 -1 Substrate instance name
2 W 25.0mils 5 Line width
3 L 100.0mils 5 Line length
4 Wall1 '' 5 Distance to 1st sidewall
5 Wall2 '' 5 Distance to 2nd sidewall
6 Temp '' 12 Physical temperature
END_ELEMENT
MLJCROSS MLJCROSS 6
1 Subst Subst1 -1 Substrate
2 W1 10mils 5 Width
3 W2 10mils 5 Width
4 W3 10mils 5 Width
5 W4 10mils 5 Width
6 Layer 1 -2 Layer
END_ELEMENT
MLJGAP MLJGAP 4
1 Subst Subst1 -1 Substrate
2 G 10mils 5 Width
3 W 10mils 5 Width
4 Layer 1 -2 Layer
END_ELEMENT
MLJTEE MLJTEE 5
1 Subst Subst1 -1 Substrate
2 W1 10mils 5 Width
3 W2 10mils 5 Width
4 W3 10mils 5 Width
5 Layer 1 -2 Layer
END_ELEMENT
MLOC MLOC 6
1 Subst MSub1 -1 Substrate instance name
2 W 25.0mils 5 Line width
3 L 100.0mils 5 Line length
4 Wall1 '' 5 Distance to 1st sidewall
5 Wall2 '' 5 Distance to 2nd sidewall
6 Temp '' 12 Physical temperature
END_ELEMENT
MLOPENSTUB MLOPENSTUB 4
1 Subst Subst1 -1 Substrate
2 Length 100mils 5 Length
3 W 10mils 5 Width
4 Layer 1 -2 Layer
END_ELEMENT
MLRADIAL1 MLRADIAL1 6
1 Subst Subst1 -1 Substrate
2 X_Offset 100mils 5 Horizontal Offset
3 Y_Offset 0mils 5 VerticalOffset
4 W_Left 20mils 5 Width
5 W_Right 10mils 5 Width
6 Layer 1 -2 Layer
END_ELEMENT
MLRADIAL2 MLRADIAL2 8
1 Subst Subst1 -1 Substrate
2 X_Offset 100mils 5 Horizontal Offset
3 Y_Offset 0mils 5 VerticalOffset
4 W_Left 20mils 5 Width
5 W_Right 10mils 5 Width
6 S_Left 5mils 5 Width
7 S_Right 10mils 5 Width
8 Layer 1 -2 Layer
END_ELEMENT
MLRADIAL3 MLRADIAL3 8
1 Subst Subst1 -1 Substrate
2 X_Offset 100mils 5 Horizontal Offset
3 Y_Offset 0mils 5 VerticalOffset
4 W_Left 20mils 5 Width
5 W_Right 10mils 5 Width
6 S_Left 5mils 5 Width
7 S_Right 10mils 5 Width
8 Layer 1 -2 Layer
END_ELEMENT
MLRADIAL4 MLRADIAL4 8
1 Subst Subst1 -1 Substrate
2 X_Offset 100mils 5 Horizontal Offset
3 Y_Offset 0mils 5 VerticalOffset
4 W_Left 20mils 5 Width
5 W_Right 10mils 5 Width
6 S_Left 5mils 5 Width
7 S_Right 10mils 5 Width
8 Layer 1 -2 Layer
END_ELEMENT
MLRADIAL5 MLRADIAL5 8
1 Subst Subst1 -1 Substrate
2 X_Offset 100mils 5 Horizontal Offset
3 Y_Offset 0mils 5 VerticalOffset
4 W_Left 20mils 5 Width
5 W_Right 10mils 5 Width
6 S_Left 5mils 5 Width
7 S_Right 10mils 5 Width
8 Layer 1 -2 Layer
END_ELEMENT
MLSC MLSC 6
1 Subst MSub1 -1 Substrate instance name
2 W 25.0mils 5 Line width
3 L 100.0mils 5 Line length
4 Wall1 '' 5 Distance to 1st sidewall
5 Wall2 '' 5 Distance to 2nd sidewall
6 Temp '' 12 Physical temperature
END_ELEMENT
MLSLANTED1 MLSLANTED1 5
1 Subst Subst1 -1 Substrate
2 X_Offset 100mils 5 Horizontal Offset
3 Y_Offset 100mils 5 VerticalOffset
4 W 10mils 5 Width
5 Layer 1 -2 Layer
END_ELEMENT
MLSLANTED16 MLSLANTED16 6
1 Subst Subst1 -1 Substrate
2 X_Offset 100mils 5 Horizontal Offset
3 Y_Offset 100mils 5 VerticalOffset
4 W 10mils 5 Width
5 S 2mils 5 Spacing
6 Layer 1 -2 Layer
END_ELEMENT
MLSLANTED2 MLSLANTED2 6
1 Subst Subst1 -1 Substrate
2 X_Offset 100mils 5 Horizontal Offset
3 Y_Offset 100mils 5 VerticalOffset
4 W 10mils 5 Width
5 S 2mils 5 Spacing
6 Layer 1 -2 Layer
END_ELEMENT
MLSLANTED3 MLSLANTED3 6
1 Subst Subst1 -1 Substrate
2 X_Offset 100mils 5 Horizontal Offset
3 Y_Offset 100mils 5 VerticalOffset
4 W 10mils 5 Width
5 S 2mils 5 Spacing
6 Layer 1 -2 Layer
END_ELEMENT
MLSLANTED4 MLSLANTED4 6
1 Subst Subst1 -1 Substrate
2 X_Offset 100mils 5 Horizontal Offset
3 Y_Offset 100mils 5 VerticalOffset
4 W 10mils 5 Width
5 S 2mils 5 Spacing
6 Layer 1 -2 Layer
END_ELEMENT
MLSLANTED5 MLSLANTED5 6
1 Subst Subst1 -1 Substrate
2 X_Offset 100mils 5 Horizontal Offset
3 Y_Offset 100mils 5 VerticalOffset
4 W 10mils 5 Width
5 S 2mils 5 Spacing
6 Layer 1 -2 Layer
END_ELEMENT
MLSLANTED6 MLSLANTED6 6
1 Subst Subst1 -1 Substrate
2 X_Offset 100mils 5 Horizontal Offset
3 Y_Offset 100mils 5 VerticalOffset
4 W 10mils 5 Width
5 S 2mils 5 Spacing
6 Layer 1 -2 Layer
END_ELEMENT
MLSLANTED7 MLSLANTED7 6
1 Subst Subst1 -1 Substrate
2 X_Offset 100mils 5 Horizontal Offset
3 Y_Offset 100mils 5 VerticalOffset
4 W 10mils 5 Width
5 S 2mils 5 Spacing
6 Layer 1 -2 Layer
END_ELEMENT
MLSLANTED8 MLSLANTED8 6
1 Subst Subst1 -1 Substrate
2 X_Offset 100mils 5 Horizontal Offset
3 Y_Offset 100mils 5 VerticalOffset
4 W 10mils 5 Width
5 S 2mils 5 Spacing
6 Layer 1 -2 Layer
END_ELEMENT
MLSUBSTRATE10 MLSUBSTRATE10 67
1 Er[1] 4.5 -1 Dielectric Constant
2 H[1] 10mils 5 Height of Substrate
3 TanD[1] 0 -1 Dielectric Loss Tangent
4 T[1] 0mils 5 Thickness
5 Cond[1] 1.0E+306 -1 Conductivity
6 Er[2] 4.5 -1 Dielectric Constant
7 H[2] 10mils 5 Height of Substrate
8 TanD[2] 0 -1 Dielectric Loss Tangent
9 T[2] 0mils 5 Thickness
10 Cond[2] 1.0E+306 -1 Conductivity
11 Er[3] 4.5 -1 Dielectric Constant
12 H[3] 10mils 5 Height of Substrate
13 TanD[3] 0 -1 Dielectric Loss Tangent
14 T[3] 0mils 5 Thickness
15 Cond[3] 1.0E+306 -1 Conductivity
16 Er[4] 4.5 -1 Dielectric Constant
17 H[4] 10mils 5 Height of Substrate
18 TanD[4] 0 -1 Dielectric Loss Tangent
19 T[4] 0mils 5 Thickness
20 Cond[4] 1.0E+306 -1 Conductivity
21 Er[5] 4.5 -1 Dielectric Constant
22 H[5] 10mils 5 Height of Substrate
23 TanD[5] 0 -1 Dielectric Loss Tangent
24 T[5] 0mils 5 Thickness
25 Cond[5] 1.0E+306 -1 Conductivity
26 Er[6] 4.5 -1 Dielectric Constant
27 H[6] 10mils 5 Height of Substrate
28 TanD[6] 0 -1 Dielectric Loss Tangent
29 T[6] 0mils 5 Thickness
30 Cond[6] 1.0E+306 -1 Conductivity
31 Er[7] 4.5 -1 Dielectric Constant
32 H[7] 10mils 5 Height of Substrate
33 TanD[7] 0 -1 Dielectric Loss Tangent
34 T[7] 0mils 5 Thickness
35 Cond[7] 1.0E+306 -1 Conductivity
36 Er[8] 4.5 -1 Dielectric Constant
37 H[8] 10mils 5 Height of Substrate
38 TanD[8] 0 -1 Dielectric Loss Tangent
39 T[8] 0mils 5 Thickness
40 Cond[8] 1.0E+306 -1 Conductivity
41 Er[9] 4.5 -1 Dielectric Constant
42 H[9] 10mils 5 Height of Substrate
43 TanD[9] 0 -1 Dielectric Loss Tangent
44 T[9] 0mils 5 Thickness
45 Cond[9] 1.0E+306 -1 Conductivity
46 T[10] 0mils 5 Thickness
47 Cond[10] 1.0E+306 -1 Conductivity
48 LayerType[1] BLANK -2 Metal Definition
49 LayerType[2] SIGNAL -2 Metal Definition
50 LayerType[3] GROUND -2 Metal Definition
51 LayerType[4] POWER -2 Metal Definition
52 LayerType[5] POWER -2 Metal Definition
53 LayerType[6] POWER -2 Metal Definition
54 LayerType[7] POWER -2 Metal Definition
55 LayerType[8] POWER -2 Metal Definition
56 LayerType[9] POWER -2 Metal Definition
57 LayerType[10] POWER -2 Metal Definition
58 LayerName[1] smt_cond -1 (for Layout option) Layer to which cond is mapped
59 LayerName[2] smt_cond -1 (for Layout option) Layer to which cond is mapped
60 LayerName[3] smt_cond -1 (for Layout option) Layer to which cond is mapped
61 LayerName[4] smt_cond -1 (for Layout option) Layer to which cond is mapped
62 LayerName[5] smt_cond -1 (for Layout option) Layer to which cond is mapped
63 LayerName[6] smt_cond -1 (for Layout option) Layer to which cond is mapped
64 LayerName[7] smt_cond -1 (for Layout option) Layer to which cond is mapped
65 LayerName[8] smt_cond -1 (for Layout option) Layer to which cond is mapped
66 LayerName[9] smt_cond -1 (for Layout option) Layer to which cond is mapped
67 LayerName[10] smt_cond -1 (for Layout option) Layer to which cond is mapped
END_ELEMENT
MLSUBSTRATE12 MLSUBSTRATE12 81
1 Er[1] 4.5 -1 Dielectric Constant
2 H[1] 10mils 5 Height of Substrate
3 TanD[1] 0 -1 Dielectric Loss Tangent
4 T[1] 0mils 5 Thickness
5 Cond[1] 1.0E+306 -1 Conductivity
6 Er[2] 4.5 -1 Dielectric Constant
7 H[2] 10mils 5 Height of Substrate
8 TanD[2] 0 -1 Dielectric Loss Tangent
9 T[2] 0mils 5 Thickness
10 Cond[2] 1.0E+306 -1 Conductivity
11 Er[3] 4.5 -1 Dielectric Constant
12 H[3] 10mils 5 Height of Substrate
13 TanD[3] 0 -1 Dielectric Loss Tangent
14 T[3] 0mils 5 Thickness
15 Cond[3] 1.0E+306 -1 Conductivity
16 Er[4] 4.5 -1 Dielectric Constant
17 H[4] 10mils 5 Height of Substrate
18 TanD[4] 0 -1 Dielectric Loss Tangent
19 T[4] 0mils 5 Thickness
20 Cond[4] 1.0E+306 -1 Conductivity
21 Er[5] 4.5 -1 Dielectric Constant
22 H[5] 10mils 5 Height of Substrate
23 TanD[5] 0 -1 Dielectric Loss Tangent
24 T[5] 0mils 5 Thickness
25 Cond[5] 1.0E+306 -1 Conductivity
26 Er[6] 4.5 -1 Dielectric Constant
27 H[6] 10mils 5 Height of Substrate
28 TanD[6] 0 -1 Dielectric Loss Tangent
29 T[6] 0mils 5 Thickness
30 Cond[6] 1.0E+306 -1 Conductivity
31 Er[7] 4.5 -1 Dielectric Constant
32 H[7] 10mils 5 Height of Substrate
33 TanD[7] 0 -1 Dielectric Loss Tangent
34 T[7] 0mils 5 Thickness
35 Cond[7] 1.0E+306 -1 Conductivity
36 Er[8] 4.5 -1 Dielectric Constant
37 H[8] 10mils 5 Height of Substrate
38 TanD[8] 0 -1 Dielectric Loss Tangent
39 T[8] 0mils 5 Thickness
40 Cond[8] 1.0E+306 -1 Conductivity
41 Er[9] 4.5 -1 Dielectric Constant
42 H[9] 10mils 5 Height of Substrate
43 TanD[9] 0 -1 Dielectric Loss Tangent
44 T[9] 0mils 5 Thickness
45 Cond[9] 1.0E+306 -1 Conductivity
46 Er[10] 4.5 -1 Dielectric Constant
47 H[10] 10mils 5 Height of Substrate
48 TanD[10] 0 -1 Dielectric Loss Tangent
49 T[10] 0mils 5 Thickness
50 Cond[10] 1.0E+306 -1 Conductivity
51 Er[11] 4.5 -1 Dielectric Constant
52 H[11] 10mils 5 Height of Substrate
53 TanD[11] 0 -1 Dielectric Loss Tangent
54 T[11] 0mils 5 Thickness
55 Cond[11] 1.0E+306 -1 Conductivity
56 T[12] 0mils 5 Thickness
57 Cond[12] 1.0E+306 -1 Conductivity
58 LayerType[1] BLANK -2 Metal Definition
59 LayerType[2] SIGNAL -2 Metal Definition
60 LayerType[3] GROUND -2 Metal Definition
61 LayerType[4] POWER -2 Metal Definition
62 LayerType[5] POWER -2 Metal Definition
63 LayerType[6] POWER -2 Metal Definition
64 LayerType[7] POWER -2 Metal Definition
65 LayerType[8] POWER -2 Metal Definition
66 LayerType[9] POWER -2 Metal Definition
67 LayerType[10] POWER -2 Metal Definition
68 LayerType[11] POWER -2 Metal Definition
69 LayerType[12] POWER -2 Metal Definition
70 LayerName[1] smt_cond -1 (for Layout option) Layer to which cond is mapped
71 LayerName[2] smt_cond -1 (for Layout option) Layer to which cond is mapped
72 LayerName[3] smt_cond -1 (for Layout option) Layer to which cond is mapped
73 LayerName[4] smt_cond -1 (for Layout option) Layer to which cond is mapped
74 LayerName[5] smt_cond -1 (for Layout option) Layer to which cond is mapped
75 LayerName[6] smt_cond -1 (for Layout option) Layer to which cond is mapped
76 LayerName[7] smt_cond -1 (for Layout option) Layer to which cond is mapped
77 LayerName[8] smt_cond -1 (for Layout option) Layer to which cond is mapped
78 LayerName[9] smt_cond -1 (for Layout option) Layer to which cond is mapped
79 LayerName[10] smt_cond -1 (for Layout option) Layer to which cond is mapped
80 LayerName[11] smt_cond -1 (for Layout option) Layer to which cond is mapped
81 LayerName[12] smt_cond -1 (for Layout option) Layer to which cond is mapped
END_ELEMENT
MLSUBSTRATE14 MLSUBSTRATE14 95
1 Er[1] 4.5 -1 Dielectric Constant
2 H[1] 10mils 5 Height of Substrate
3 TanD[1] 0 -1 Dielectric Loss Tangent
4 T[1] 0mils 5 Thickness
5 Cond[1] 1.0E+306 -1 Conductivity
6 Er[2] 4.5 -1 Dielectric Constant
7 H[2] 10mils 5 Height of Substrate
8 TanD[2] 0 -1 Dielectric Loss Tangent
9 T[2] 0mils 5 Thickness
10 Cond[2] 1.0E+306 -1 Conductivity
11 Er[3] 4.5 -1 Dielectric Constant
12 H[3] 10mils 5 Height of Substrate
13 TanD[3] 0 -1 Dielectric Loss Tangent
14 T[3] 0mils 5 Thickness
15 Cond[3] 1.0E+306 -1 Conductivity
16 Er[4] 4.5 -1 Dielectric Constant
17 H[4] 10mils 5 Height of Substrate
18 TanD[4] 0 -1 Dielectric Loss Tangent
19 T[4] 0mils 5 Thickness
20 Cond[4] 1.0E+306 -1 Conductivity
21 Er[5] 4.5 -1 Dielectric Constant
22 H[5] 10mils 5 Height of Substrate
23 TanD[5] 0 -1 Dielectric Loss Tangent
24 T[5] 0mils 5 Thickness
25 Cond[5] 1.0E+306 -1 Conductivity
26 Er[6] 4.5 -1 Dielectric Constant
27 H[6] 10mils 5 Height of Substrate
28 TanD[6] 0 -1 Dielectric Loss Tangent
29 T[6] 0mils 5 Thickness
30 Cond[6] 1.0E+306 -1 Conductivity
31 Er[7] 4.5 -1 Dielectric Constant
32 H[7] 10mils 5 Height of Substrate
33 TanD[7] 0 -1 Dielectric Loss Tangent
34 T[7] 0mils 5 Thickness
35 Cond[7] 1.0E+306 -1 Conductivity
36 Er[8] 4.5 -1 Dielectric Constant
37 H[8] 10mils 5 Height of Substrate
38 TanD[8] 0 -1 Dielectric Loss Tangent
39 T[8] 0mils 5 Thickness
40 Cond[8] 1.0E+306 -1 Conductivity
41 Er[9] 4.5 -1 Dielectric Constant
42 H[9] 10mils 5 Height of Substrate
43 TanD[9] 0 -1 Dielectric Loss Tangent
44 T[9] 0mils 5 Thickness
45 Cond[9] 1.0E+306 -1 Conductivity
46 Er[10] 4.5 -1 Dielectric Constant
47 H[10] 10mils 5 Height of Substrate
48 TanD[10] 0 -1 Dielectric Loss Tangent
49 T[10] 0mils 5 Thickness
50 Cond[10] 1.0E+306 -1 Conductivity
51 Er[11] 4.5 -1 Dielectric Constant
52 H[11] 10mils 5 Height of Substrate
53 TanD[11] 0 -1 Dielectric Loss Tangent
54 T[11] 0mils 5 Thickness
55 Cond[11] 1.0E+306 -1 Conductivity
56 Er[12] 4.5 -1 Dielectric Constant
57 H[12] 10mils 5 Height of Substrate
58 TanD[12] 0 -1 Dielectric Loss Tangent
59 T[12] 0mils 5 Thickness
60 Cond[12] 1.0E+306 -1 Conductivity
61 Er[13] 4.5 -1 Dielectric Constant
62 H[13] 10mils 5 Height of Substrate
63 TanD[13] 0 -1 Dielectric Loss Tangent
64 T[13] 0mils 5 Thickness
65 Cond[13] 1.0E+306 -1 Conductivity
66 T[14] 0mils 5 Thickness
67 Cond[14] 1.0E+306 -2 Conductivity
68 LayerType[1] BLANK -2 Metal Definition
69 LayerType[2] SIGNAL -2 Metal Definition
70 LayerType[3] GROUND -2 Metal Definition
71 LayerType[4] POWER -2 Metal Definition
72 LayerType[5] POWER -2 Metal Definition
73 LayerType[6] POWER -2 Metal Definition
74 LayerType[7] POWER -2 Metal Definition
75 LayerType[8] POWER -2 Metal Definition
76 LayerType[9] POWER -2 Metal Definition
77 LayerType[10] POWER -2 Metal Definition
78 LayerType[11] POWER -2 Metal Definition
79 LayerType[12] POWER -2 Metal Definition
80 LayerType[13] POWER -2 Metal Definition
81 LayerType[14] POWER -2 Metal Definition
82 LayerName[1] smt_cond -1 (for Layout option) Layer to which cond is mapped
83 LayerName[2] smt_cond -1 (for Layout option) Layer to which cond is mapped
84 LayerName[3] smt_cond -1 (for Layout option) Layer to which cond is mapped
85 LayerName[4] smt_cond -1 (for Layout option) Layer to which cond is mapped
86 LayerName[5] smt_cond -1 (for Layout option) Layer to which cond is mapped
87 LayerName[6] smt_cond -1 (for Layout option) Layer to which cond is mapped
88 LayerName[7] smt_cond -1 (for Layout option) Layer to which cond is mapped
89 LayerName[8] smt_cond -1 (for Layout option) Layer to which cond is mapped
90 LayerName[9] smt_cond -1 (for Layout option) Layer to which cond is mapped
91 LayerName[10] smt_cond -1 (for Layout option) Layer to which cond is mapped
92 LayerName[11] smt_cond -1 (for Layout option) Layer to which cond is mapped
93 LayerName[12] smt_cond -1 (for Layout option) Layer to which cond is mapped
94 LayerName[13] smt_cond -1 (for Layout option) Layer to which cond is mapped
95 LayerName[14] smt_cond -1 (for Layout option) Layer to which cond is mapped
END_ELEMENT
MLSUBSTRATE16 MLSUBSTRATE16 109
1 Er[1] 4.5 -1 Dielectric Constant
2 H[1] 10mils 5 Height of Substrate
3 TanD[1] 0 -1 Dielectric Loss Tangent
4 T[1] 0mils 5 Thickness
5 Cond[1] 1.0E+306 -1 Conductivity
6 Er[2] 4.5 -1 Dielectric Constant
7 H[2] 10mils 5 Height of Substrate
8 TanD[2] 0 -1 Dielectric Loss Tangent
9 T[2] 0mils 5 Thickness
10 Cond[2] 1.0E+306 -1 Conductivity
11 Er[3] 4.5 -1 Dielectric Constant
12 H[3] 10mils 5 Height of Substrate
13 TanD[3] 0 -1 Dielectric Loss Tangent
14 T[3] 0mils 5 Thickness
15 Cond[3] 1.0E+306 -1 Conductivity
16 Er[4] 4.5 -1 Dielectric Constant
17 H[4] 10mils 5 Height of Substrate
18 TanD[4] 0 -1 Dielectric Loss Tangent
19 T[4] 0mils 5 Thickness
20 Cond[4] 1.0E+306 -1 Conductivity
21 Er[5] 4.5 -1 Dielectric Constant
22 H[5] 10mils 5 Height of Substrate
23 TanD[5] 0 -1 Dielectric Loss Tangent
24 T[5] 0mils 5 Thickness
25 Cond[5] 1.0E+306 -1 Conductivity
26 Er[6] 4.5 -1 Dielectric Constant
27 H[6] 10mils 5 Height of Substrate
28 TanD[6] 0 -1 Dielectric Loss Tangent
29 T[6] 0mils 5 Thickness
30 Cond[6] 1.0E+306 -1 Conductivity
31 Er[7] 4.5 -1 Dielectric Constant
32 H[7] 10mils 5 Height of Substrate
33 TanD[7] 0 -1 Dielectric Loss Tangent
34 T[7] 0mils 5 Thickness
35 Cond[7] 1.0E+306 -1 Conductivity
36 Er[8] 4.5 -1 Dielectric Constant
37 H[8] 10mils 5 Height of Substrate
38 TanD[8] 0 -1 Dielectric Loss Tangent
39 T[8] 0mils 5 Thickness
40 Cond[8] 1.0E+306 -1 Conductivity
41 Er[9] 4.5 -1 Dielectric Constant
42 H[9] 10mils 5 Height of Substrate
43 TanD[9] 0 -1 Dielectric Loss Tangent
44 T[9] 0mils 5 Thickness
45 Cond[9] 1.0E+306 -1 Conductivity
46 Er[10] 4.5 -1 Dielectric Constant
47 H[10] 10mils 5 Height of Substrate
48 TanD[10] 0 -1 Dielectric Loss Tangent
49 T[10] 0mils 5 Thickness
50 Cond[10] 1.0E+306 -1 Conductivity
51 Er[11] 4.5 -1 Dielectric Constant
52 H[11] 10mils 5 Height of Substrate
53 TanD[11] 0 -1 Dielectric Loss Tangent
54 T[11] 0mils 5 Thickness
55 Cond[11] 1.0E+306 -1 Conductivity
56 Er[12] 4.5 -1 Dielectric Constant
57 H[12] 10mils 5 Height of Substrate
58 TanD[12] 0 -1 Dielectric Loss Tangent
59 T[12] 0mils 5 Thickness
60 Cond[12] 1.0E+306 -1 Conductivity
61 Er[13] 4.5 -1 Dielectric Constant
62 H[13] 10mils 5 Height of Substrate
63 TanD[13] 0 -1 Dielectric Loss Tangent
64 T[13] 0mils 5 Thickness
65 Cond[13] 1.0E+306 -1 Conductivity
66 Er[14] 4.5 -1 Dielectric Constant
67 H[14] 10mils 5 Height of Substrate
68 TanD[14] 0 -1 Dielectric Loss Tangent
69 T[14] 0mils 5 Thickness
70 Cond[14] 1.0E+306 -1 Conductivity
71 Er[15] 4.5 -1 Dielectric Constant
72 H[15] 10mils 5 Height of Substrate
73 TanD[15] 0 -1 Dielectric Loss Tangent
74 T[15] 0mils 5 Thickness
75 Cond[15] 1.0E+306 -1 Conductivity
76 T[16] 0mils 5 Thickness
77 Cond[16] 1.0E+306 -1 Conductivity
78 LayerType[1] BLANK -2 Metal Definition
79 LayerType[2] SIGNAL -2 Metal Definition
80 LayerType[3] GROUND -2 Metal Definition
81 LayerType[4] POWER -2 Metal Definition
82 LayerType[5] POWER -2 Metal Definition
83 LayerType[6] POWER -2 Metal Definition
84 LayerType[7] POWER -2 Metal Definition
85 LayerType[8] POWER -2 Metal Definition
86 LayerType[9] POWER -2 Metal Definition
87 LayerType[10] POWER -2 Metal Definition
88 LayerType[11] POWER -2 Metal Definition
89 LayerType[12] POWER -2 Metal Definition
90 LayerType[13] POWER -2 Metal Definition
91 LayerType[14] POWER -2 Metal Definition
92 LayerType[15] POWER -2 Metal Definition
93 LayerType[16] POWER -2 Metal Definition
94 LayerName[1] smt_cond -1 (for Layout option) Layer to which cond is mapped
95 LayerName[2] smt_cond -1 (for Layout option) Layer to which cond is mapped
96 LayerName[3] smt_cond -1 (for Layout option) Layer to which cond is mapped
97 LayerName[4] smt_cond -1 (for Layout option) Layer to which cond is mapped
98 LayerName[5] smt_cond -1 (for Layout option) Layer to which cond is mapped
99 LayerName[6] smt_cond -1 (for Layout option) Layer to which cond is mapped
100 LayerName[7] smt_cond -1 (for Layout option) Layer to which cond is mapped
101 LayerName[8] smt_cond -1 (for Layout option) Layer to which cond is mapped
102 LayerName[9] smt_cond -1 (for Layout option) Layer to which cond is mapped
103 LayerName[10] smt_cond -1 (for Layout option) Layer to which cond is mapped
104 LayerName[11] smt_cond -1 (for Layout option) Layer to which cond is mapped
105 LayerName[12] smt_cond -1 (for Layout option) Layer to which cond is mapped
106 LayerName[13] smt_cond -1 (for Layout option) Layer to which cond is mapped
107 LayerName[14] smt_cond -1 (for Layout option) Layer to which cond is mapped
108 LayerName[15] smt_cond -1 (for Layout option) Layer to which cond is mapped
109 LayerName[16] smt_cond -1 (for Layout option) Layer to which cond is mapped
END_ELEMENT
MLSUBSTRATE32 MLSUBSTRATE32 109
1 Er[1] 4.5 -1 Dielectric Constant
2 H[1] 10mils 5 Height of Substrate
3 TanD[1] 0 -1 Dielectric Loss Tangent
4 T[1] 0mils 5 Thickness
5 Cond[1] 1.0E+306 -1 Conductivity
6 Er[2] 4.5 -1 Dielectric Constant
7 H[2] 10mils 5 Height of Substrate
8 TanD[2] 0 -1 Dielectric Loss Tangent
9 T[2] 0mils 5 Thickness
10 Cond[2] 1.0E+306 -1 Conductivity
11 Er[3] 4.5 -1 Dielectric Constant
12 H[3] 10mils 5 Height of Substrate
13 TanD[3] 0 -1 Dielectric Loss Tangent
14 T[3] 0mils 5 Thickness
15 Cond[3] 1.0E+306 -1 Conductivity
16 Er[4] 4.5 -1 Dielectric Constant
17 H[4] 10mils 5 Height of Substrate
18 TanD[4] 0 -1 Dielectric Loss Tangent
19 T[4] 0mils 5 Thickness
20 Cond[4] 1.0E+306 -1 Conductivity
21 Er[5] 4.5 -1 Dielectric Constant
22 H[5] 10mils 5 Height of Substrate
23 TanD[5] 0 -1 Dielectric Loss Tangent
24 T[5] 0mils 5 Thickness
25 Cond[5] 1.0E+306 -1 Conductivity
26 Er[6] 4.5 -1 Dielectric Constant
27 H[6] 10mils 5 Height of Substrate
28 TanD[6] 0 -1 Dielectric Loss Tangent
29 T[6] 0mils 5 Thickness
30 Cond[6] 1.0E+306 -1 Conductivity
31 Er[7] 4.5 -1 Dielectric Constant
32 H[7] 10mils 5 Height of Substrate
33 TanD[7] 0 -1 Dielectric Loss Tangent
34 T[7] 0mils 5 Thickness
35 Cond[7] 1.0E+306 -1 Conductivity
36 Er[8] 4.5 -1 Dielectric Constant
37 H[8] 10mils 5 Height of Substrate
38 TanD[8] 0 -1 Dielectric Loss Tangent
39 T[8] 0mils 5 Thickness
40 Cond[8] 1.0E+306 -1 Conductivity
41 Er[9] 4.5 -1 Dielectric Constant
42 H[9] 10mils 5 Height of Substrate
43 TanD[9] 0 -1 Dielectric Loss Tangent
44 T[9] 0mils 5 Thickness
45 Cond[9] 1.0E+306 -1 Conductivity
46 Er[10] 4.5 -1 Dielectric Constant
47 H[10] 10mils 5 Height of Substrate
48 TanD[10] 0 -1 Dielectric Loss Tangent
49 T[10] 0mils 5 Thickness
50 Cond[10] 1.0E+306 -1 Conductivity
51 Er[11] 4.5 -1 Dielectric Constant
52 H[11] 10mils 5 Height of Substrate
53 TanD[11] 0 -1 Dielectric Loss Tangent
54 T[11] 0mils 5 Thickness
55 Cond[11] 1.0E+306 -1 Conductivity
56 Er[12] 4.5 -1 Dielectric Constant
57 H[12] 10mils 5 Height of Substrate
58 TanD[12] 0 -1 Dielectric Loss Tangent
59 T[12] 0mils 5 Thickness
60 Cond[12] 1.0E+306 -1 Conductivity
61 Er[13] 4.5 -1 Dielectric Constant
62 H[13] 10mils 5 Height of Substrate
63 TanD[13] 0 -1 Dielectric Loss Tangent
64 T[13] 0mils 5 Thickness
65 Cond[13] 1.0E+306 -1 Conductivity
66 Er[14] 4.5 -1 Dielectric Constant
67 H[14] 10mils 5 Height of Substrate
68 TanD[14] 0 -1 Dielectric Loss Tangent
69 T[14] 0mils 5 Thickness
70 Cond[14] 1.0E+306 -1 Conductivity
71 Er[15] 4.5 -1 Dielectric Constant
72 H[15] 10mils 5 Height of Substrate
73 TanD[15] 0 -1 Dielectric Loss Tangent
74 T[15] 0mils 5 Thickness
75 Cond[15] 1.0E+306 -1 Conductivity
76 T[16] 0mils 5 Thickness
77 Cond[16] 1.0E+306 -1 Conductivity
78 LayerType[1] BLANK -2 Metal Definition
79 LayerType[2] SIGNAL -2 Metal Definition
80 LayerType[3] GROUND -2 Metal Definition
81 LayerType[4] POWER -2 Metal Definition
82 LayerType[5] POWER -2 Metal Definition
83 LayerType[6] POWER -2 Metal Definition
84 LayerType[7] POWER -2 Metal Definition
85 LayerType[8] POWER -2 Metal Definition
86 LayerType[9] POWER -2 Metal Definition
87 LayerType[10] POWER -2 Metal Definition
88 LayerType[11] POWER -2 Metal Definition
89 LayerType[12] POWER -2 Metal Definition
90 LayerType[13] POWER -2 Metal Definition
91 LayerType[14] POWER -2 Metal Definition
92 LayerType[15] POWER -2 Metal Definition
93 LayerType[16] POWER -2 Metal Definition
94 LayerName[1] smt_cond -1 (for Layout option) Layer to which cond is mapped
95 LayerName[2] smt_cond -1 (for Layout option) Layer to which cond is mapped
96 LayerName[3] smt_cond -1 (for Layout option) Layer to which cond is mapped
97 LayerName[4] smt_cond -1 (for Layout option) Layer to which cond is mapped
98 LayerName[5] smt_cond -1 (for Layout option) Layer to which cond is mapped
99 LayerName[6] smt_cond -1 (for Layout option) Layer to which cond is mapped
100 LayerName[7] smt_cond -1 (for Layout option) Layer to which cond is mapped
101 LayerName[8] smt_cond -1 (for Layout option) Layer to which cond is mapped
102 LayerName[9] smt_cond -1 (for Layout option) Layer to which cond is mapped
103 LayerName[10] smt_cond -1 (for Layout option) Layer to which cond is mapped
104 LayerName[11] smt_cond -1 (for Layout option) Layer to which cond is mapped
105 LayerName[12] smt_cond -1 (for Layout option) Layer to which cond is mapped
106 LayerName[13] smt_cond -1 (for Layout option) Layer to which cond is mapped
107 LayerName[14] smt_cond -1 (for Layout option) Layer to which cond is mapped
108 LayerName[15] smt_cond -1 (for Layout option) Layer to which cond is mapped
109 LayerName[16] smt_cond -1 (for Layout option) Layer to which cond is mapped
END_ELEMENT
MLSUBSTRATE40 MLSUBSTRATE40 109
1 Er[1] 4.5 -1 Dielectric Constant
2 H[1] 10mils 5 Height of Substrate
3 TanD[1] 0 -1 Dielectric Loss Tangent
4 T[1] 0mils 5 Thickness
5 Cond[1] 1.0E+306 -1 Conductivity
6 Er[2] 4.5 -1 Dielectric Constant
7 H[2] 10mils 5 Height of Substrate
8 TanD[2] 0 -1 Dielectric Loss Tangent
9 T[2] 0mils 5 Thickness
10 Cond[2] 1.0E+306 -1 Conductivity
11 Er[3] 4.5 -1 Dielectric Constant
12 H[3] 10mils 5 Height of Substrate
13 TanD[3] 0 -1 Dielectric Loss Tangent
14 T[3] 0mils 5 Thickness
15 Cond[3] 1.0E+306 -1 Conductivity
16 Er[4] 4.5 -1 Dielectric Constant
17 H[4] 10mils 5 Height of Substrate
18 TanD[4] 0 -1 Dielectric Loss Tangent
19 T[4] 0mils 5 Thickness
20 Cond[4] 1.0E+306 -1 Conductivity
21 Er[5] 4.5 -1 Dielectric Constant
22 H[5] 10mils 5 Height of Substrate
23 TanD[5] 0 -1 Dielectric Loss Tangent
24 T[5] 0mils 5 Thickness
25 Cond[5] 1.0E+306 -1 Conductivity
26 Er[6] 4.5 -1 Dielectric Constant
27 H[6] 10mils 5 Height of Substrate
28 TanD[6] 0 -1 Dielectric Loss Tangent
29 T[6] 0mils 5 Thickness
30 Cond[6] 1.0E+306 -1 Conductivity
31 Er[7] 4.5 -1 Dielectric Constant
32 H[7] 10mils 5 Height of Substrate
33 TanD[7] 0 -1 Dielectric Loss Tangent
34 T[7] 0mils 5 Thickness
35 Cond[7] 1.0E+306 -1 Conductivity
36 Er[8] 4.5 -1 Dielectric Constant
37 H[8] 10mils 5 Height of Substrate
38 TanD[8] 0 -1 Dielectric Loss Tangent
39 T[8] 0mils 5 Thickness
40 Cond[8] 1.0E+306 -1 Conductivity
41 Er[9] 4.5 -1 Dielectric Constant
42 H[9] 10mils 5 Height of Substrate
43 TanD[9] 0 -1 Dielectric Loss Tangent
44 T[9] 0mils 5 Thickness
45 Cond[9] 1.0E+306 -1 Conductivity
46 Er[10] 4.5 -1 Dielectric Constant
47 H[10] 10mils 5 Height of Substrate
48 TanD[10] 0 -1 Dielectric Loss Tangent
49 T[10] 0mils 5 Thickness
50 Cond[10] 1.0E+306 -1 Conductivity
51 Er[11] 4.5 -1 Dielectric Constant
52 H[11] 10mils 5 Height of Substrate
53 TanD[11] 0 -1 Dielectric Loss Tangent
54 T[11] 0mils 5 Thickness
55 Cond[11] 1.0E+306 -1 Conductivity
56 Er[12] 4.5 -1 Dielectric Constant
57 H[12] 10mils 5 Height of Substrate
58 TanD[12] 0 -1 Dielectric Loss Tangent
59 T[12] 0mils 5 Thickness
60 Cond[12] 1.0E+306 -1 Conductivity
61 Er[13] 4.5 -1 Dielectric Constant
62 H[13] 10mils 5 Height of Substrate
63 TanD[13] 0 -1 Dielectric Loss Tangent
64 T[13] 0mils 5 Thickness
65 Cond[13] 1.0E+306 -1 Conductivity
66 Er[14] 4.5 -1 Dielectric Constant
67 H[14] 10mils 5 Height of Substrate
68 TanD[14] 0 -1 Dielectric Loss Tangent
69 T[14] 0mils 5 Thickness
70 Cond[14] 1.0E+306 -1 Conductivity
71 Er[15] 4.5 -1 Dielectric Constant
72 H[15] 10mils 5 Height of Substrate
73 TanD[15] 0 -1 Dielectric Loss Tangent
74 T[15] 0mils 5 Thickness
75 Cond[15] 1.0E+306 -1 Conductivity
76 T[16] 0mils 5 Thickness
77 Cond[16] 1.0E+306 -1 Conductivity
78 LayerType[1] BLANK -2 Metal Definition
79 LayerType[2] SIGNAL -2 Metal Definition
80 LayerType[3] GROUND -2 Metal Definition
81 LayerType[4] POWER -2 Metal Definition
82 LayerType[5] POWER -2 Metal Definition
83 LayerType[6] POWER -2 Metal Definition
84 LayerType[7] POWER -2 Metal Definition
85 LayerType[8] POWER -2 Metal Definition
86 LayerType[9] POWER -2 Metal Definition
87 LayerType[10] POWER -2 Metal Definition
88 LayerType[11] POWER -2 Metal Definition
89 LayerType[12] POWER -2 Metal Definition
90 LayerType[13] POWER -2 Metal Definition
91 LayerType[14] POWER -2 Metal Definition
92 LayerType[15] POWER -2 Metal Definition
93 LayerType[16] POWER -2 Metal Definition
94 LayerName[1] smt_cond -1 (for Layout option) Layer to which cond is mapped
95 LayerName[2] smt_cond -1 (for Layout option) Layer to which cond is mapped
96 LayerName[3] smt_cond -1 (for Layout option) Layer to which cond is mapped
97 LayerName[4] smt_cond -1 (for Layout option) Layer to which cond is mapped
98 LayerName[5] smt_cond -1 (for Layout option) Layer to which cond is mapped
99 LayerName[6] smt_cond -1 (for Layout option) Layer to which cond is mapped
100 LayerName[7] smt_cond -1 (for Layout option) Layer to which cond is mapped
101 LayerName[8] smt_cond -1 (for Layout option) Layer to which cond is mapped
102 LayerName[9] smt_cond -1 (for Layout option) Layer to which cond is mapped
103 LayerName[10] smt_cond -1 (for Layout option) Layer to which cond is mapped
104 LayerName[11] smt_cond -1 (for Layout option) Layer to which cond is mapped
105 LayerName[12] smt_cond -1 (for Layout option) Layer to which cond is mapped
106 LayerName[13] smt_cond -1 (for Layout option) Layer to which cond is mapped
107 LayerName[14] smt_cond -1 (for Layout option) Layer to which cond is mapped
108 LayerName[15] smt_cond -1 (for Layout option) Layer to which cond is mapped
109 LayerName[16] smt_cond -1 (for Layout option) Layer to which cond is mapped
END_ELEMENT
MLSUBSTRATE2 MLSUBSTRATE2 11
1 Er 4.5 -1 Dielectric Constant
2 H 10mils 5 Height of Substrate
3 TanD 0 -1 Dielectric Loss Tangent
4 T[1] 0mils 5 Thickness
5 Cond[1] 1.0E+306 -1 Conductivity
6 T[2] 0mils 5 Thickness
7 Cond[2] 1.0E+306 -1 Conductivity
8 LayerType[1] SIGNAL -2 Metal Definition
9 LayerType[2] GROUND -2 Metal Definition
10 LayerName[1] smt_cond -1 (for Layout option) Layer to which cond is mapped
11 LayerName[2] smt_cond -1 (for Layout option) Layer to which cond is mapped
END_ELEMENT
MLSUBSTRATE3 MLSUBSTRATE3 18
1 Er[1] 4.5 -1 Dielectric Constant
2 H[1] 10mils 5 Height of Substrate
3 TanD[1] 0 -1 Dielectric Loss Tangent
4 T[1] 0mils 5 Thickness
5 Cond[1] 1.0E+306 -1 Conductivity
6 Er[2] 4.5 -1 Dielectric Constant
7 H[2] 10mils 5 Height of Substrate
8 TanD[2] 0 -1 Dielectric Loss Tangent
9 T[2] 0mils 5 Thickness
10 Cond[2] 1.0E+306 -1 Conductivity
11 T[3] 0mils 5 Thickness
12 Cond[3] 1.0E+306 -1 Conductivity
13 LayerType[1] GROUND -2 Metal Definition
14 LayerType[2] SIGNAL -2 Metal Definition
15 LayerType[3] GROUND -2 Metal Definition
16 LayerName[1] smt_cond -1 (for Layout option) Layer to which cond is mapped
17 LayerName[2] smt_cond -1 (for Layout option) Layer to which cond is mapped
18 LayerName[3] smt_cond -1 (for Layout option) Layer to which cond is mapped
END_ELEMENT
MLSUBSTRATE4 MLSUBSTRATE4 25
1 Er[1] 4.5 -1 Dielectric Constant
2 H[1] 10mils 5 Height of Substrate
3 TanD[1] 0 -1 Dielectric Loss Tangent
4 T[1] 0mils 5 Thickness
5 Cond[1] 1.0E+306 -1 Conductivity
6 Er[2] 4.5 -1 Dielectric Constant
7 H[2] 10mils 5 Height of Substrate
8 TanD[2] 0 -1 Dielectric Loss Tangent
9 T[2] 0mils 5 Thickness
10 Cond[2] 1.0E+306 -1 Conductivity
11 Er[3] 4.5 -1 Dielectric Constant
12 H[3] 10mils 5 Height of Substrate
13 TanD[3] 0 -1 Dielectric Loss Tangent
14 T[3] 0mils 5 Thickness
15 Cond[3] 1.0E+306 -1 Conductivity
16 T[4] 0mils 5 Thickness
17 Cond[4] 1.0E+306 -1 Conductivity
18 LayerType[1] BLANK -2 Metal Definition
19 LayerType[2] SIGNAL -2 Metal Definition
20 LayerType[3] GROUND -2 Metal Definition
21 LayerType[4] POWER -2 Metal Definition
22 LayerName[1] smt_cond -1 (for Layout option) Layer to which cond is mapped
23 LayerName[2] smt_cond -1 (for Layout option) Layer to which cond is mapped
24 LayerName[3] smt_cond -1 (for Layout option) Layer to which cond is mapped
25 LayerName[4] smt_cond -1 (for Layout option) Layer to which cond is mapped
END_ELEMENT
MLSUBSTRATE5 MLSUBSTRATE5 32
1 Er[1] 4.5 -1 Dielectric Constant
2 H[1] 10mils 5 Height of Substrate
3 TanD[1] 0 -1 Dielectric Loss Tangent
4 T[1] 0mils 5 Thickness
5 Cond[1] 1.0E+306 -1 Conductivity
6 Er[2] 4.5 -1 Dielectric Constant
7 H[2] 10mils 5 Height of Substrate
8 TanD[2] 0 -1 Dielectric Loss Tangent
9 T[2] 0mils 5 Thickness
10 Cond[2] 1.0E+306 -1 Conductivity
11 Er[3] 4.5 -1 Dielectric Constant
12 H[3] 10mils 5 Height of Substrate
13 TanD[3] 0 -1 Dielectric Loss Tangent
14 T[3] 0mils 5 Thickness
15 Cond[3] 1.0E+306 -1 Conductivity
16 Er[4] 4.5 -1 Dielectric Constant
17 H[4] 10mils 5 Height of Substrate
18 TanD[4] 0 -1 Dielectric Loss Tangent
19 T[4] 0mils 5 Thickness
20 Cond[4] 1.0E+306 -1 Conductivity
21 T[5] 0mils 5 Thickness
22 Cond[5] 1.0E+306 -1 Conductivity
23 LayerType[1] BLANK -2 Metal Definition
24 LayerType[2] SIGNAL -2 Metal Definition
25 LayerType[3] GROUND -2 Metal Definition
26 LayerType[4] POWER -2 Metal Definition
27 LayerType[5] POWER -2 Metal Definition
28 LayerName[1] smt_cond -1 (for Layout option) Layer to which cond is mapped
29 LayerName[2] smt_cond -1 (for Layout option) Layer to which cond is mapped
30 LayerName[3] smt_cond -1 (for Layout option) Layer to which cond is mapped
31 LayerName[4] smt_cond -1 (for Layout option) Layer to which cond is mapped
32 LayerName[5] smt_cond -1 (for Layout option) Layer to which cond is mapped
END_ELEMENT
MLSUBSTRATE6 MLSUBSTRATE6 39
1 Er[1] 4.5 -1 Dielectric Constant
2 H[1] 10mils 5 Height of Substrate
3 TanD[1] 0 -1 Dielectric Loss Tangent
4 T[1] 0mils 5 Thickness
5 Cond[1] 1.0E+306 -1 Conductivity
6 Er[2] 4.5 -1 Dielectric Constant
7 H[2] 10mils 5 Height of Substrate
8 TanD[2] 0 -1 Dielectric Loss Tangent
9 T[2] 0mils 5 Thickness
10 Cond[2] 1.0E+306 -1 Conductivity
11 Er[3] 4.5 -1 Dielectric Constant
12 H[3] 10mils 5 Height of Substrate
13 TanD[3] 0 -1 Dielectric Loss Tangent
14 T[3] 0mils 5 Thickness
15 Cond[3] 1.0E+306 -1 Conductivity
16 Er[4] 4.5 -1 Dielectric Constant
17 H[4] 10mils 5 Height of Substrate
18 TanD[4] 0 -1 Dielectric Loss Tangent
19 T[4] 0mils 5 Thickness
20 Cond[4] 1.0E+306 -1 Conductivity
21 Er[5] 4.5 -1 Dielectric Constant
22 H[5] 10mils 5 Height of Substrate
23 TanD[5] 0 -1 Dielectric Loss Tangent
24 T[5] 0mils 5 Thickness
25 Cond[5] 1.0E+306 -1 Conductivity
26 T[6] 0mils 5 Thickness
27 Cond[6] 1.0E+306 -1 Conductivity
28 LayerType[1] BLANK -2 Metal Definition
29 LayerType[2] SIGNAL -2 Metal Definition
30 LayerType[3] GROUND -2 Metal Definition
31 LayerType[4] POWER -2 Metal Definition
32 LayerType[5] POWER -2 Metal Definition
33 LayerType[6] POWER -2 Metal Definition
34 LayerName[1] smt_cond -1 (for Layout option) Layer to which cond is mapped
35 LayerName[2] smt_cond -1 (for Layout option) Layer to which cond is mapped
36 LayerName[3] smt_cond -1 (for Layout option) Layer to which cond is mapped
37 LayerName[4] smt_cond -1 (for Layout option) Layer to which cond is mapped
38 LayerName[5] smt_cond -1 (for Layout option) Layer to which cond is mapped
39 LayerName[6] smt_cond -1 (for Layout option) Layer to which cond is mapped
END_ELEMENT
MLSUBSTRATE7 MLSUBSTRATE7 46
1 Er[1] 4.5 -1 Dielectric Constant
2 H[1] 10mils 5 Height of Substrate
3 TanD[1] 0 -1 Dielectric Loss Tangent
4 T[1] 0mils 5 Thickness
5 Cond[1] 1.0E+306 -1 Conductivity
6 Er[2] 4.5 -1 Dielectric Constant
7 H[2] 10mils 5 Height of Substrate
8 TanD[2] 0 -1 Dielectric Loss Tangent
9 T[2] 0mils 5 Thickness
10 Cond[2] 1.0E+306 -1 Conductivity
11 Er[3] 4.5 -1 Dielectric Constant
12 H[3] 10mils 5 Height of Substrate
13 TanD[3] 0 -1 Dielectric Loss Tangent
14 T[3] 0mils 5 Thickness
15 Cond[3] 1.0E+306 -1 Conductivity
16 Er[4] 4.5 -1 Dielectric Constant
17 H[4] 10mils 5 Height of Substrate
18 TanD[4] 0 -1 Dielectric Loss Tangent
19 T[4] 0mils 5 Thickness
20 Cond[4] 1.0E+306 -1 Conductivity
21 Er[5] 4.5 -1 Dielectric Constant
22 H[5] 10mils 5 Height of Substrate
23 TanD[5] 0 -1 Dielectric Loss Tangent
24 T[5] 0mils 5 Thickness
25 Cond[5] 1.0E+306 -1 Conductivity
26 Er[6] 4.5 -1 Dielectric Constant
27 H[6] 10mils 5 Height of Substrate
28 TanD[6] 0 -1 Dielectric Loss Tangent
29 T[6] 0mils 5 Thickness
30 Cond[6] 1.0E+306 -1 Conductivity
31 T[7] 0mils 5 Thickness
32 Cond[7] 1.0E+306 -1 Conductivity
33 LayerType[1] BLANK -2 Metal Definition
34 LayerType[2] SIGNAL -2 Metal Definition
35 LayerType[3] GROUND -2 Metal Definition
36 LayerType[4] POWER -2 Metal Definition
37 LayerType[5] POWER -2 Metal Definition
38 LayerType[6] POWER -2 Metal Definition
39 LayerType[7] POWER -2 Metal Definition
40 LayerName[1] smt_cond -1 (for Layout option) Layer to which cond is mapped
41 LayerName[2] smt_cond -1 (for Layout option) Layer to which cond is mapped
42 LayerName[3] smt_cond -1 (for Layout option) Layer to which cond is mapped
43 LayerName[4] smt_cond -1 (for Layout option) Layer to which cond is mapped
44 LayerName[5] smt_cond -1 (for Layout option) Layer to which cond is mapped
45 LayerName[6] smt_cond -1 (for Layout option) Layer to which cond is mapped
46 LayerName[7] smt_cond -1 (for Layout option) Layer to which cond is mapped
END_ELEMENT
MLSUBSTRATE8 MLSUBSTRATE8 53
1 Er[1] 4.5 -1 Dielectric Constant
2 H[1] 10mils 5 Height of Substrate
3 TanD[1] 0 -1 Dielectric Loss Tangent
4 T[1] 0mils 5 Thickness
5 Cond[1] 1.0E+306 -1 Conductivity
6 Er[2] 4.5 -1 Dielectric Constant
7 H[2] 10mils 5 Height of Substrate
8 TanD[2] 0 -1 Dielectric Loss Tangent
9 T[2] 0mils 5 Thickness
10 Cond[2] 1.0E+306 -1 Conductivity
11 Er[3] 4.5 -1 Dielectric Constant
12 H[3] 10mils 5 Height of Substrate
13 TanD[3] 0 -1 Dielectric Loss Tangent
14 T[3] 0mils 5 Thickness
15 Cond[3] 1.0E+306 -1 Conductivity
16 Er[4] 4.5 -1 Dielectric Constant
17 H[4] 10mils 5 Height of Substrate
18 TanD[4] 0 -1 Dielectric Loss Tangent
19 T[4] 0mils 5 Thickness
20 Cond[4] 1.0E+306 -1 Conductivity
21 Er[5] 4.5 -1 Dielectric Constant
22 H[5] 10mils 5 Height of Substrate
23 TanD[5] 0 -1 Dielectric Loss Tangent
24 T[5] 0mils 5 Thickness
25 Cond[5] 1.0E+306 -1 Conductivity
26 Er[6] 4.5 -1 Dielectric Constant
27 H[6] 10mils 5 Height of Substrate
28 TanD[6] 0 -1 Dielectric Loss Tangent
29 T[6] 0mils 5 Thickness
30 Cond[6] 1.0E+306 -1 Conductivity
31 Er[7] 4.5 -1 Dielectric Constant
32 H[7] 10mils 5 Height of Substrate
33 TanD[7] 0 -1 Dielectric Loss Tangent
34 T[7] 0mils 5 Thickness
35 Cond[7] 1.0E+306 -1 Conductivity
36 T[8] 0mils 5 Thickness
37 Cond[8] 1.0E+306 -1 Conductivity
38 LayerType[1] BLANK -2 Metal Definition
39 LayerType[2] SIGNAL -2 Metal Definition
40 LayerType[3] GROUND -2 Metal Definition
41 LayerType[4] POWER -2 Metal Definition
42 LayerType[5] POWER -2 Metal Definition
43 LayerType[6] POWER -2 Metal Definition
44 LayerType[7] POWER -2 Metal Definition
45 LayerType[8] POWER -2 Metal Definition
46 LayerName[1] smt_cond -1 (for Layout option) Layer to which cond is mapped
47 LayerName[2] smt_cond -1 (for Layout option) Layer to which cond is mapped
48 LayerName[3] smt_cond -1 (for Layout option) Layer to which cond is mapped
49 LayerName[4] smt_cond -1 (for Layout option) Layer to which cond is mapped
50 LayerName[5] smt_cond -1 (for Layout option) Layer to which cond is mapped
51 LayerName[6] smt_cond -1 (for Layout option) Layer to which cond is mapped
52 LayerName[7] smt_cond -1 (for Layout option) Layer to which cond is mapped
53 LayerName[8] smt_cond -1 (for Layout option) Layer to which cond is mapped
END_ELEMENT
MLSUBSTRATE9 MLSUBSTRATE9 60
1 Er[1] 4.5 -1 Dielectric Constant
2 H[1] 10mils 5 Height of Substrate
3 TanD[1] 0 -1 Dielectric Loss Tangent
4 T[1] 0mils 5 Thickness
5 Cond[1] 1.0E+306 -1 Conductivity
6 Er[2] 4.5 -1 Dielectric Constant
7 H[2] 10mils 5 Height of Substrate
8 TanD[2] 0 -1 Dielectric Loss Tangent
9 T[2] 0mils 5 Thickness
10 Cond[2] 1.0E+306 -1 Conductivity
11 Er[3] 4.5 -1 Dielectric Constant
12 H[3] 10mils 5 Height of Substrate
13 TanD[3] 0 -1 Dielectric Loss Tangent
14 T[3] 0mils 5 Thickness
15 Cond[3] 1.0E+306 -1 Conductivity
16 Er[4] 4.5 -1 Dielectric Constant
17 H[4] 10mils 5 Height of Substrate
18 TanD[4] 0 -1 Dielectric Loss Tangent
19 T[4] 0mils 5 Thickness
20 Cond[4] 1.0E+306 -1 Conductivity
21 Er[5] 4.5 -1 Dielectric Constant
22 H[5] 10mils 5 Height of Substrate
23 TanD[5] 0 -1 Dielectric Loss Tangent
24 T[5] 0mils 5 Thickness
25 Cond[5] 1.0E+306 -1 Conductivity
26 Er[6] 4.5 -1 Dielectric Constant
27 H[6] 10mils 5 Height of Substrate
28 TanD[6] 0 -1 Dielectric Loss Tangent
29 T[6] 0mils 5 Thickness
30 Cond[6] 1.0E+306 -1 Conductivity
31 Er[7] 4.5 -1 Dielectric Constant
32 H[7] 10mils 5 Height of Substrate
33 TanD[7] 0 -1 Dielectric Loss Tangent
34 T[7] 0mils 5 Thickness
35 Cond[7] 1.0E+306 -1 Conductivity
36 Er[8] 4.5 -1 Dielectric Constant
37 H[8] 10mils 5 Height of Substrate
38 TanD[8] 0 -1 Dielectric Loss Tangent
39 T[8] 0mils 5 Thickness
40 Cond[8] 1.0E+306 -1 Conductivity
41 T[9] 0mils 5 Thickness
42 Cond[9] 1.0E+306 -1 Conductivity
43 LayerType[1] BLANK -2 Metal Definition
44 LayerType[2] SIGNAL -2 Metal Definition
45 LayerType[3] GROUND -2 Metal Definition
46 LayerType[4] POWER -2 Metal Definition
47 LayerType[5] POWER -2 Metal Definition
48 LayerType[6] POWER -2 Metal Definition
49 LayerType[7] POWER -2 Metal Definition
50 LayerType[8] POWER -2 Metal Definition
51 LayerType[9] POWER -2 Metal Definition
52 LayerName[1] smt_cond -1 (for Layout option) Layer to which cond is mapped
53 LayerName[2] smt_cond -1 (for Layout option) Layer to which cond is mapped
54 LayerName[3] smt_cond -1 (for Layout option) Layer to which cond is mapped
55 LayerName[4] smt_cond -1 (for Layout option) Layer to which cond is mapped
56 LayerName[5] smt_cond -1 (for Layout option) Layer to which cond is mapped
57 LayerName[6] smt_cond -1 (for Layout option) Layer to which cond is mapped
58 LayerName[7] smt_cond -1 (for Layout option) Layer to which cond is mapped
59 LayerName[8] smt_cond -1 (for Layout option) Layer to which cond is mapped
60 LayerName[9] smt_cond -1 (for Layout option) Layer to which cond is mapped
END_ELEMENT
MLVIAHOLE MLVIAHOLE 6
1 Subst Subst1 -1 Substrate
2 DiamVia 5mils 5 Diameter of Via
3 T 0mils 5 Plating Thickness
4 Cond[1] 1.0E+306 -1 Conductivity
5 Layer1 1 -2 Layer
6 Layer2 2 -2 Layer
END_ELEMENT
MLVIAPAD MLVIAPAD 5
1 Subst Subst1 -1 Substrate
2 DiamVia 5mils 5 Diameter of Via
3 DiamPad 15mils 5 Diameter of Pad
4 Layer 1 -2 Layer
5 Angle 180deg 7 For Layout Only: angle from input pin to output pin
END_ELEMENT
MM9_NMOS MM9_NMOS 10
1 Model MOSFETM1 -1 Model instance name
2 Length '' 5 Channel Length, m
3 Width '' 5 Channel Width, m
4 Ab '' -1 Diffusion Area, m^2
5 Ls '' 5 Length of sidewall not under gate, m
6 Lg '' 5 Length of sidewall under gate, m
7 Region '' -1 DC operating region, 0=off, 1=on, 2=rev, 3=sat
8 Temp '' 12 Device operating temperature
9 Mult '' -1 Number of Devices in Parallel
10 Mode simtype_nonlin -1 Simulation Mode for This Device
END_ELEMENT
MOSFET_NMOS MOSFET_NMOS 13
1 Model MOSFETM1 -1 Model instance name
2 Length '' 5 Channel Length, m
3 Width '' 5 Channel Width, m
4 Ad '' -1 Drain Area, m^2
5 As '' -1 Source Area, m^2
6 Pd '' 5 Drain Perimeter, m
7 Ps '' 5 Source Perimeter, m
8 Nrd '' -1 Drain Squares
9 Nrs '' -1 Source Squares
10 Mult '' -1 Number of Devices in Parallel
11 Region '' -1 DC operating region, 0=off, 1=on, 2=rev, 3=sat
12 Temp '' 12 Device operating temperature
13 Mode simtype_nonlin -1 Simulation Mode for This Device
END_ELEMENT
MOSFET_PMOS MOSFET_PMOS 13
1 Model MOSFETM1 -1 Model instance name
2 Length '' 5 Channel Length, m
3 Width '' 5 Channel Width, m
4 Ad '' -1 Drain Area, m^2
5 As '' -1 Source Area, m^2
6 Pd '' 5 Drain Perimeter, m
7 Ps '' 5 Source Perimeter, m
8 Nrd '' -1 Drain Squares
9 Nrs '' -1 Source Squares
10 Mult '' -1 Number of Devices in Parallel
11 Region '' -1 DC operating region, 0=off, 1=on, 2=rev, 3=sat
12 Temp '' 12 Device operating temperature
13 Mode simtype_nonlin -1 Simulation Mode for This Device
END_ELEMENT
MOS_Model9_Process MOS_Model9_Process 96
1 NMOS y_n1 -1 Model Type - YES or NO
2 PMOS y_n0 -1 Model Type - YES or NO
3 Type 2 -1 Type of model: 1:SINGLE_DEVICE 2:PROCESS_BASED
4 Ler '' 5 Effective Channel Length of the Reference Transistor, m
5 Wer '' 5 Effective Channel Width of the Reference Transistor, m
6 Lvar '' 5 Difference between the Actual and the Programmed Poly-Silicon Gate Length, m
7 Lap '' 5 Effective Channel Length Reduction per Side, m
8 Wvar '' 5 Difference between the Actual and the Programmed Field-Oxide Opening
9 Wot '' 5 Effective Channel Width Reduction per Side, m
10 Tr '' 12 Temperature for the Reference Transistor, Celsius
11 Vtor '' 9 Threshold Voltage at Zero Back-Bias, V
12 Stvto '' -1 Coefficient of the Temperature Dependence of VTO, V/K
13 Slvto '' -1 Coefficient of the Length Dependence of VTO, V*m
14 Sl2vto '' -1 Second Coefficient of the Length Dependence of VTO, V*m^2
15 Swvto '' -1 Coefficient of the Width Dependence of VTO, V*m
16 Kor '' -1 Low Back-Bias Body Factor, V^(1/2)
17 Slko '' -1 Coefficient of the Length Dependence of KO, m*V^(1/2)
18 Swko '' -1 Coefficient of the Width Dependence of KO, m*V^(1/2)
19 Kr '' -1 High Back-Bias Body Factor, V^(1/2)
20 Slk '' -1 Coefficient of the Length Dependence of K, m*V^(1/2)
21 Swk '' -1 Coefficient of the Width Dependence of K, m*V^(1/2)
22 Phibr '' 9 Surface Potential at Strong Inversion, V
23 Vsbxr '' 9 Transition Voltage for the Dual-K-Factor Model, V
24 Slvsbx '' -1 Coefficient of the Length Dependence of VSBX, V*m
25 Swvsbx '' -1 Coefficient of the Width Dependence of VSBX, V*m
26 Betsq '' -1 Gain Factor, A/V^2
27 Etabet '' -1 Exponent of the Temperature Dependence of BET
28 The1r '' -1 Coefficient of the Mobility Reduction due to the Gate-Induced Field, 1/V
29 Stthe1r '' -1 Coefficient of the Temperature Dependence of THE1, 1/V/K
30 Slthe1r '' -1 Coefficient of the Length Dependence of THE1, m/V
31 Stlthe1 '' -1 Coefficient of the Temperature Dependence of the Length Dependence of THE1, m/V/K
32 Swthe1 '' -1 Coefficient of the Width Dependence of THE1, m/V
33 The2r '' -1 Coefficient of the Mobility Reduction due to the Back-Bias, V^(-1/2)
34 Stthe2r '' -1 Coefficient of the Temperature Dependence of THE2, V^(-1/2)/K
35 Slthe2r '' -1 Coefficient of the Length Dependence of THE2, m/V^(1/2)
36 Stlthe2 '' -1 Coefficient of the Temperature Dependence of the Length Dependence of THE2, m/V^(1/2)/K
37 Swthe2 '' -1 Coefficient of the Width Dependence of THE2, m/V^(1/2)
38 The3r '' -1 Coefficient of the Mobility Reduction due to the Lateral Field, 1/V
39 Stthe3r '' -1 Coefficient of the Temperature Dependence of THE3, 1/V/K
40 Slthe3r '' -1 Coefficient of the Length Dependence of THE3, m/V
41 Stlthe3 '' -1 Coefficient of the Temperature Dependence of the Length Dependence of THE3, m/V/K
42 Swthe3 '' -1 Coefficient of the Width Dependence of THE3, m/V
43 Gam1r '' 9 Coefficient for the Drain Induced Threshold Shift, V
44 Slgam1 '' -1 Coefficient of the Length Dependence of GAM1, V*m
45 Swgam1 '' -1 Coefficient of the Width Dependence of GAM1, V*m
46 Etadsr '' -1 Exponent of the Vds Dependence of GAM1
47 Alpr '' -1 Factor of the Channel-Length Modulation
48 Etaalp '' -1 Exponent of the Length Dependence of ALP
49 Slalp '' 5 Coefficient of the Length Dependence of ALP, m
50 Swalp '' 5 Coefficient of the Width Dependence of ALP, m
51 Vpr '' 9 Characteristic Voltage of Channel Length Modulation, V
52 Gamoor '' -1 Coefficient of the Drain-Induced Threshold Shift
53 Slgamoo '' 5 Coefficient of the Length Dependence of GAMOO, m
54 Etagamr '' -1 Exponent of the Back-Bias Dependence of GAMO
55 Mor '' -1 Factor of the Subthreshold Slope
56 Stmo '' -1 Coefficient of the Temperature Dependence of MO, 1/K
57 Slmo '' -1 Coefficient of the Length Dependence of MO, m^(1/2)
58 Etamr '' -1 Exponent of the Back-Bias Dependence of M
59 Zet1r '' -1 Weak Inversion Correction Factor
60 Etazet '' -1 Exponent of the Length Dependence of ZET
61 Slzet1 '' 5 Coefficient of the Length Dependence of ZET
62 Vsbtr '' 9 Limiting Voltage of the VSB Dependence of M and GAMO, V
63 Slvsbt '' -1 Coefficient of the Length Dependence of VSBT, m*V
64 A1r '' -1 Factor of the Weak-Avalanche Current
65 Sta1 '' -1 Coefficient of the Temperature Dependence of A1, 1/K
66 Sla1 '' 5 Coefficient of the Length Dependence of A1, m
67 Swa1 '' 5 Coefficient of the Width Dependence of A1, m
68 A2r '' 9 Exponent of the Weak-Avalanche Current, V
69 Sla2 '' -1 Coefficient of the Length Dependence of A2, m*V
70 Swa2 '' -1 Coefficient of the Width Dependence of A2, m*V
71 A3r '' -1 Factor of Vds above which Weak-Avalanche Occurs
72 Sla3 '' 5 Coefficient of the Length Dependence of A3, m
73 Swa3 '' 5 Coefficient of the Width Dependence of A3, m
74 Tox '' 5 Thickness of the Oxide Layer, m
75 Col '' -1 Gate Overlap Capacitance per Unit Channel Width, F/m
76 Ntr '' -1 Coefficient of the Thermal Noise
77 Nfr '' -1 Coefficient of the Flicker Noise
78 Vr '' 9 Reference Voltage, V
79 Jsgbr '' -1 Bottom Saturation Current Density due to Electron-Hole generation, A/m^2
80 Jsdbr '' -1 Bottom Saturation Current Density due to Diffusion from Back Contact, A/m^2
81 Jsgsr '' -1 Sidewall Saturation Current Density due to Electron-Hole generation, A/m
82 Jsdsr '' -1 Sidewall Saturation Current Density due to Diffusion from Back Contact, A/m
83 Jsggr '' -1 Gate-Edge Saturation Current Density due to Electron-Hole generation, A/m
84 Jsdgr '' -1 Gate-Edge Saturation Current Density due to Diffusion from Back Contact, A/m
85 Cjbr '' -1 Bottom Junction Capacitance, F/m^2
86 Cjsr '' -1 Sidewall Junction Capacitance, F/m
87 Cjgr '' -1 Gate-Edge Junction Capacitance, F/m
88 Vdbr '' 9 Diffusion Voltage of the Bottom Junction, V
89 Vdsr '' 9 Diffusion Voltage of the Sidewall Junction, V
90 Vdgr '' 9 Diffusion Voltage of the Gate-Edge Junction, V
91 Pb '' -1 Bottom Junction Grading Coefficient
92 Ps '' -1 Sidewall Junction Grading Coefficient
93 Pg '' -1 Gate-Edge Junction Grading Coefficient
94 Nb '' -1 Emission Coefficient of the Bottom Forward Current
95 Ns '' -1 Emission Coefficient of the Sidewall Forward Current
96 Ng '' -1 Emission Coefficient of the Gate-Edge Forward Current
END_ELEMENT
MOS_Model9_Single MOS_Model9_Single 54
1 NMOS y_n1 -1 Model Type - YES or NO
2 PMOS y_n0 -1 Model Type - YES or NO
3 Type 1 -1 Type of model: 1:SINGLE_DEVICE 2:PROCESS_BASED
4 Vto '' 9 Threshold Voltage at Zero Back-Bias, V
5 Ko '' -1 Low Back-Bias Body Factor, V^(1/2)
6 K '' -1 High Back-Bias Body Factor, V^(1/2)
7 Phib '' 9 Surface Potential at Strong Inversion, V
8 Vsbx '' 9 Transition Voltage for the Dual-K-Factor Model, V
9 Bet '' -1 Gain Factor, A/V^2
10 The1 '' -1 Coefficient of the Mobility Reduction due to the Gate-Induced Field, 1/V
11 The2 '' -1 Coefficient of the Mobility Reduction due to the Back-Bias, V^(-1/2)
12 The3 '' -1 Coefficient of the Mobility Reduction due to the Lateral Field, 1/V
13 Gam1 '' 9 Coefficient for the Drain Induced Threshold Shift, V
14 Etads '' -1 Exponent of the Vds Dependence of GAM1
15 Alp '' -1 Factor of the Channel-Length Modulation
16 Vp '' 9 Characteristic Voltage of Channel Length Modulation, V
17 Gamoo '' -1 Coefficient of the Drain-Induced Threshold Shift
18 Etagam '' -1 Exponent of the Back-Bias Dependence of GAMO
19 Mo '' -1 Factor of the Subthreshold Slope
20 Etam '' -1 Exponent of the Back-Bias Dependence of M
21 Zet1 '' -1 Weak Inversion Correction Factor
22 Vsbt '' 9 Limiting Voltage of the VSB Dependence of M and GAMO, V
23 A1 '' -1 Factor of the Weak-Avalanche Current
24 A2 '' 9 Exponent of the Weak-Avalanche Current, V
25 A3 '' -1 Factor of Vds above which Weak-Avalanche Occurs
26 Cox '' 4 Gate to Channel Capacitance, F
27 Cgdo '' 4 Gate-Drain Overlap Capacitance, F
28 Cgso '' 4 Gate-Source Overlap Capacitance, F
29 Nt '' -1 Coefficient of the Thermal Noise
30 Nf '' -1 Coefficient of the Flicker Noise
31 Isgb '' -1 Bottom Saturation Current Density due to Electron-Hole generation, A
32 Isdb '' 10 Bottom Saturation Current Density due to Diffusion from Back Contact, A
33 Isgs '' 10 Sidewall Saturation Current Density due to Electron-Hole generation, A
34 Isds '' 10 Sidewall Saturation Current Density due to Diffusion from Back Contact, A
35 Isgg '' 10 Gate-Edge Saturation Current Density due to Electron-Hole Generation, A
36 Isdg '' 10 Gate-Edge Saturation Current Density due to Diffusion from Back Contact, A
37 Cjb '' 4 Bottom Junction Capacitance, F
38 Cjs '' 4 Sidewall Junction Capacitance, F
39 Cjg '' 4 Gate-Edge Junction Capacitance, F
40 Vdb '' 9 Diffusion Voltage of the Bottom Junction, V
41 Vds '' 9 Diffusion Voltage of the Sidewall Junction, V
42 Vdg '' 9 Diffusion Voltage of the Gate-Edge Junction, V
43 Pb '' -1 Bottom Junction Grading Coefficient
44 Ps '' -1 Sidewall Junction Grading Coefficient
45 Pg '' -1 Gate-Edge Junction Grading Coefficient
46 Nb '' -1 Emission Coefficient of the Bottom Forward Current
47 Ns '' -1 Emission Coefficient of the Sidewall Forward Current
48 Ng '' -1 Emission Coefficient of the Gate-Edge Forward Current
49 wVsubfwd '' 9 Substrate Junction Forward Bias (warning), V
50 wBvsub '' 9 Substrate Junction Reverse Breakdown Voltage (warning), V
51 wBvg '' 9 Gate Oxide Breakdown Voltage (warning), V
52 wBvds '' 9 Drain-Source Breakdown Voltage (warning), V
53 wIdsmax '' 10 Maximum Drain-Source Current (warning), A
54 wPmax '' 8 Maximum Power Dissipation (warning), W
END_ELEMENT
MRIND MRIND 9
1 Subst MSub1 -1 Substrate instance name
2 N 3.0 -1 Number of turns
3 L1 30.0mils 5 Length of second outermost segment
4 L2 20.0mils 5 Length of outermost segment
5 W 1.0mils 5 Conductor width
6 S 1.0mils 5 Conductor spacing
7 Temp '' 12 Physical temperature
8 W1 1.0mils 5 (for Layout option) Width of line that connects to pin 1
9 WB 1.0mils 5 (for Layout option) Width of line that connects to pin 2
END_ELEMENT
MRINDELA MRINDELA 18
1 Subst MSub1 -1 Substrate instance name
2 Ns 7 -1 Number of segments
3 L1 11.4mils 5 Length of first segment
4 L2 9.4mils 5 Length of second segment
5 L3 7.4mils 5 Length of third segment
6 Ln 0mils 5 Length of last segment
7 W 0.45mils 5 Conductor width
8 S 0.35mils 5 Conductor spacing
9 Hi 12.5mils 5 Elevation of inductor above substrate
10 Ti 0.118mils 5 Thickness of conductors
11 Ri 1.0 -1 Resistivity (normalized to gold) of conductors
12 Sx 0mils 5 Spacing limit between support post
13 Cc 2.0 -1 Coeff. for capacitance of corner support posts
14 Cs 1.0 -1 Coeff. for capacitance of support posts along segment
15 Wu 0.4mils 5 Width of underpass strip conductor
16 Au 0.0deg 7 Angle of departure from innermost segment
17 UE 4.0mils 5 Extension of bridge beyond inductor
18 Temp '' 12 Physical temperature
END_ELEMENT
MRINDNBR MRINDNBR 9
1 Subst MSub1 -1 Substrate instance name
2 Ns 7 -1 Number of segments
3 L1 15.0mils 5 Length of first segment
4 L2 10.0mils 5 Length of second segment
5 L3 8.0mils 5 Length of third segment
6 Ln 0mils 5 Length of last segment
7 W 1.0mils 5 Conductor width
8 S 1.0mils 5 Conductor spacing
9 Temp '' 12 Physical temperature
END_ELEMENT
MRINDWBR MRINDWBR 14
1 Subst MSub1 -1 Substrate instance name
2 Ns 7 -1 Number of segments
3 L1 11.4mils 5 Length of first segment
4 L2 9.4mils 5 Length of second segment
5 L3 7.4mils 5 Length of third segment
6 Ln 0mils 5 Length of last segment
7 W 0.45mils 5 Conductor width
8 S 0.35mils 5 Conductor spacing
9 Dw 0.4mils 5 Diameter of bridge round wire
10 Rb 0.1 -1 Resistivity (normalized to gold) of bridge wire
11 Hw 15.0mils 5 Height of wire bridge above the inductor
12 Aw 0.0deg 7 Angle of departure from innermost segment
13 WE 4.0mils 5 Extension of bridge beyond inductor
14 Temp '' 12 Physical temperature
END_ELEMENT
MRSTUB MRSTUB 5
1 Subst MSub1 -1 Substrate instance name
2 Wi 25.0mils 5 Width of input line
3 L 100.0mils 5 Length of stub
4 Angle 70deg 7 Angle subtended by stub
5 Temp '' 12 Physical temperature
END_ELEMENT
MSIND MSIND 8
1 Subst MSub1 -1 Substrate instance name
2 N 2.0 -1 Number of turns
3 Ri 50.0mils 5 Inner radius
4 W 10.0mils 5 Conductor width
5 S 10.0mils 5 Conductor spacing
6 Temp '' 12 Physical temperature
7 W1 10.0mils 5 (for Layout option) Width of strip ending at pin 1
8 W2 10.0mils 5 (for Layout option) Width of strip ending at pin 2
END_ELEMENT
MSLIT MSLIT 5
1 Subst MSub1 -1 Substrate instance name
2 W 25.0mils 5 Width
3 D 15.0mils 5 Depth of slit
4 L 10.0mils 5 Length of slit
5 Temp '' 12 Physical temperature
END_ELEMENT
MSOP MSOP 8
1 Subst MSub1 -1 Substrate instance name
2 W1 25.0mils 5 Width of input line
3 D1 5.0mils 5 Distance Between Centerlines of Input Line and Stub Pair
4 W2 10.0mils 5 Width of output line
5 D2 5.0mils 5 Distance Between centerlines of output line and Stub Pair
6 Ws 10.0mils 5 Width of the stubs
7 Ls 30.0mils 5 Combined length of the stubs
8 Temp '' 12 Physical temperature
END_ELEMENT
MSTEP MSTEP 4
1 Subst MSub1 -1 Substrate instance name
2 W1 25.0mils 5 Conductor width at pin 1
3 W2 50.0mils 5 Conductor width at pin 2
4 Temp '' 12 Physical temperature
5 AutomaticWidth 'Disabled' -1
END_ELEMENT
MSUB MSUB 14
1 H 10.0mils 5 Substrate thickness
2 Er 9.6 -1 Relative dielectric constant
3 Mur 1 -1 Relative permeability
4 Cond 1.0E+306 -1 Conductor conductivity
5 Hu 1.0E+30m 5 Cover height
6 T 0m 5 Conductor thickness
7 TanD 0 -1 Dielectric loss tangent
8 Rough 0m 5 Conductor surface roughness
9 Cond1 cond -1 (for Layout option) Layer to which cond is mapped
10 Cond2 cond2 -1 (for Layout option) Layer to which cond2 is mapped
11 Diel1 diel -1 (for Layout option) Layer to which diel is mapped
12 Diel2 diel2 -1 (for Layout option) Layer to which diel2 is mapped
13 Hole hole -1 (for Layout option) Layer to which hole is mapped
14 Res resi -1 (for Layout option) Layer to which resi is mapped
END_ELEMENT
MTAPER MTAPER 5
1 Subst MSub1 -1 Substrate instance name
2 W1 25.0mils 5 Line width at pin 1
3 W2 20.0mils 5 Line width at pin 2
4 L 100.0mils 5 Line length
5 Temp '' 12 Physical temperature
6 AutomaticWidth 'Disabled' -1
END_ELEMENT
MTEE MTEE 5
1 Subst MSub1 -1 Substrate instance name
2 W1 25.0mils 5 Conductor width at pin 1
3 W2 25.0mils 5 Conductor width at pin 2
4 W3 50.0mils 5 Conductor width at pin 3
5 Temp '' 12 Physical temperature
6 AutomaticWidth 'Disabled' -1
END_ELEMENT
MTEEO MTEEO 5
1 Subst MSub1 -1 Substrate instance name
2 W1 25.0mils 5 Conductor width at pin 1
3 W2 25.0mils 5 Conductor width at pin 2
4 W3 50.0mils 5 Conductor width at pin 3
5 Temp '' 12 Physical temperature
END_ELEMENT
MTFC MTFC 13
1 Subst MSub1 -1 Substrate instance name
2 W 50.0mils 5 Dielectric width common to both metal plates
3 L 50.0mils 5 Dielectric length common to both metal plates
4 CPUA 300.0pF 4 Capacitance per unit area, (pF/mm^2)
5 T 0.2mils 5 Thickness of capacitor dielectric
6 RsT 0.0ohm 1 Sheet resistance of top metal plate
7 RsB 0.0ohm 1 Sheet resistance of bottom metal plate
8 TT 0mils 5 Thickness of top metal plate
9 TB 0mils 5 Thickness of bottom metal plate
10 COB 0mils 5 Bottom conductor overlap
11 Temp '' 12 Physical temperature
12 COT 0mils 5 (for Layout option) Top conductor overlap
13 DO 0mils 5 (for Layout option) Dielectric overlap
END_ELEMENT
MUC10 MUC10 65
1 L1 0.5nH 3 Self Inductance of Coil 1
2 R1 0.1ohm 1 Resistance of Coil 1
3 L2 1.0nH 3 Self Inductance of Coil 2
4 R2 0.2ohm 1 Resistance of Coil 2
5 L3 1.5nH 3 Self Inductance of Coil 3
6 R3 0.3ohm 1 Resistance of Coil 3
7 L4 2.0nH 3 Self Inductance of Coil 4
8 R4 0.4ohm 1 Resistance of Coil 4
9 L5 2.5nH 3 Self Inductance of Coil 5
10 R5 0.5ohm 1 Resistance of Coil 5
11 L6 3.0nH 3 Self Inductance of Coil 6
12 R6 0.6ohm 1 Resistance of Coil 6
13 L7 3.5nH 3 Self Inductance of Coil 7
14 R7 0.7ohm 1 Resistance of Coil 7
15 L8 4.0nH 3 Self Inductance of Coil 8
16 R8 0.8ohm 1 Resistance of Coil 8
17 L9 4.5nH 3 Self Inductance of Coil 9
18 R9 0.9ohm 1 Resistance of Coil 9
19 L10 5.0nH 3 Self Inductance of Coil 10
20 R10 1.0ohm 1 Resistance of Coil 10
21 K12 0.1 -1 Coupling coefficient - coils 1 and 2
22 K13 -0.1 -1 Coupling coefficient - coils 1 and 3
23 K14 0.2 -1 Coupling coefficient - coils 1 and 4
24 K15 -0.2 -1 Coupling coefficient - coils 1 and 5
25 K16 0.3 -1 Coupling coefficient - coils 1 and 6
26 K17 -0.3 -1 Coupling coefficient - coils 1 and 7
27 K18 0.4 -1 Coupling coefficient - coils 1 and 8
28 K19 -0.4 -1 Coupling coefficient - coils 1 and 9
29 K110 0.5 -1 Coupling coefficient - coils 1 and 10
30 K23 -0.5 -1 Coupling coefficient - coils 2 and 3
31 K24 0.6 -1 Coupling coefficient - coils 2 and 4
32 K25 -0.6 -1 Coupling coefficient - coils 2 and 5
33 K26 0.7 -1 Coupling coefficient - coils 2 and 6
34 K27 -0.7 -1 Coupling coefficient - coils 2 and 7
35 K28 0.8 -1 Coupling coefficient - coils 2 and 8
36 K29 -0.8 -1 Coupling coefficient - coils 2 and 9
37 K210 0.9 -1 Coupling coefficient - coils 2 and 10
38 K34 -0.9 -1 Coupling coefficient - coils 3 and 4
39 K35 0.91 -1 Coupling coefficient - coils 3 and 5
40 K36 -0.91 -1 Coupling coefficient - coils 3 and 6
41 K37 0.92 -1 Coupling coefficient - coils 3 and 7
42 K38 -0.92 -1 Coupling coefficient - coils 3 and 8
43 K39 0.93 -1 Coupling coefficient - coils 3 and 9
44 K310 -0.93 -1 Coupling coefficient - coils 3 and 10
45 K45 0.94 -1 Coupling coefficient - coils 4 and 5
46 K46 -0.94 -1 Coupling coefficient - coils 4 and 6
47 K47 0.95 -1 Coupling coefficient - coils 4 and 7
48 K48 -0.95 -1 Coupling coefficient - coils 4 and 8
49 K49 0.96 -1 Coupling coefficient - coils 4 and 9
50 K410 -0.96 -1 Coupling coefficient - coils 4 and 10
51 K56 0.97 -1 Coupling coefficient - coils 5 and 6
52 K57 -0.97 -1 Coupling coefficient - coils 5 and 7
53 K58 0.98 -1 Coupling coefficient - coils 5 and 8
54 K59 -0.98 -1 Coupling coefficient - coils 5 and 9
55 K510 0.99 -1 Coupling coefficient - coils 5 and 10
56 K67 -0.99 -1 Coupling coefficient - coils 6 and 7
57 K68 0.991 -1 Coupling coefficient - coils 6 and 8
58 K69 -0.991 -1 Coupling coefficient - coils 6 and 9
59 K610 0.992 -1 Coupling coefficient - coils 6 and 10
60 K78 -0.992 -1 Coupling coefficient - coils 7 and 8
61 K79 0.993 -1 Coupling coefficient - coils 7 and 9
62 K710 -0.993 -1 Coupling coefficient - coils 7 and 10
63 K89 0.994 -1 Coupling coefficient - coils 8 and 9
64 K810 -0.994 -1 Coupling coefficient - coils 8 and 10
65 K910 0.995 -1 Coupling coefficient - coils 9 and 10
END_ELEMENT
MUC2 MUC2 5
1 L1 0.5nH 3 Self Inductance of Coil 1
2 R1 0.1ohm 1 Resistance of Coil 1
3 L2 1.0nH 3 Self Inductance of Coil 2
4 R2 0.2ohm 1 Resistance of Coil 2
5 K12 0.1 -1 Coupling coefficient - coils 1 and 2
END_ELEMENT
MUC3 MUC3 9
1 L1 0.5nH 3 Self Inductance of Coil 1
2 R1 0.1ohm 1 Resistance of Coil 1
3 L2 1.0nH 3 Self Inductance of Coil 2
4 R2 0.2ohm 1 Resistance of Coil 2
5 L3 1.5nH 3 Self Inductance of Coil 3
6 R3 0.3ohm 1 Resistance of Coil 3
7 K12 0.1 -1 Coupling coefficient - coils 1 and 2
8 K13 -0.1 -1 Coupling coefficient - coils 1 and 3
9 K23 0.2 -1 Coupling coefficient - coils 2 and 3
END_ELEMENT
MUC4 MUC4 14
1 L1 0.5nH 3 Self Inductance of Coil 1
2 R1 0.1ohm 1 Resistance of Coil 1
3 L2 1.5nH 3 Self Inductance of Coil 2
4 R2 0.2ohm 1 Resistance of Coil 2
5 L3 2.0nH 3 Self Inductance of Coil 3
6 R3 0.3ohm 1 Resistance of Coil 3
7 L4 2.5nH 3 Self Inductance of Coil 4
8 R4 0.4ohm 1 Resistance of Coil 4
9 K12 0.1 -1 Coupling coefficient - coils 1 and 2
10 K13 -0.1 -1 Coupling coefficient - coils 1 and 3
11 K14 0.2 -1 Coupling coefficient - coils 1 and 4
12 K23 -0.2 -1 Coupling coefficient - coils 2 and 3
13 K24 0.3 -1 Coupling coefficient - coils 2 and 4
14 K34 -0.3 -1 Coupling coefficient - coils 3 and 4
END_ELEMENT
MUC5 MUC5 20
1 L1 0.5nH 3 Self Inductance of Coil 1
2 R1 0.1ohm 1 Resistance of Coil 1
3 L2 1.5nH 3 Self Inductance of Coil 2
4 R2 0.2ohm 1 Resistance of Coil 2
5 L3 2.0nH 3 Self Inductance of Coil 3
6 R3 0.3ohm 1 Resistance of Coil 3
7 L4 3.0nH 3 Self Inductance of Coil 4
8 R4 0.5ohm 1 Resistance of Coil 4
9 L5 2.5nH 3 Self Inductance of Coil 5
10 R5 0.4ohm 1 Resistance of Coil 5
11 K12 0.1 -1 Coupling coefficient - coils 1 and 2
12 K13 -0.1 -1 Coupling coefficient - coils 1 and 3
13 K14 0.2 -1 Coupling coefficient - coils 1 and 4
14 K15 -0.2 -1 Coupling coefficient - coils 1 and 5
15 K23 0.3 -1 Coupling coefficient - coils 2 and 3
16 K24 -0.3 -1 Coupling coefficient - coils 2 and 4
17 K25 0.4 -1 Coupling coefficient - coils 2 and 5
18 K34 -0.4 -1 Coupling coefficient - coils 3 and 4
19 K35 0.5 -1 Coupling coefficient - coils 3 and 5
20 K45 -0.5 -1 Coupling coefficient - coils 4 and 5
END_ELEMENT
MUC6 MUC6 27
1 L1 0.5nH 3 Self Inductance of Coil 1
2 R1 0.1ohm 1 Resistance of Coil 1
3 L2 1.0nH 3 Self Inductance of Coil 2
4 R2 0.2ohm 1 Resistance of Coil 2
5 L3 1.5nH 3 Self Inductance of Coil 3
6 R3 0.3ohm 1 Resistance of Coil 3
7 L4 2.0nH 3 Self Inductance of Coil 4
8 R4 0.4ohm 1 Resistance of Coil 4
9 L5 2.5nH 3 Self Inductance of Coil 5
10 R5 0.5ohm 1 Resistance of Coil 5
11 L6 3.0nH 3 Self Inductance of Coil 6
12 R6 0.6ohm 1 Resistance of Coil 6
13 K12 0.1 -1 Coupling coefficient - coils 1 and 2
14 K13 -0.1 -1 Coupling coefficient - coils 1 and 3
15 K14 0.2 -1 Coupling coefficient - coils 1 and 4
16 K15 -0.2 -1 Coupling coefficient - coils 1 and 5
17 K16 0.3 -1 Coupling coefficient - coils 1 and 6
18 K23 -0.3 -1 Coupling coefficient - coils 2 and 3
19 K24 0.4 -1 Coupling coefficient - coils 2 and 4
20 K25 -0.4 -1 Coupling coefficient - coils 2 and 5
21 K26 0.5 -1 Coupling coefficient - coils 2 and 6
22 K34 -0.5 -1 Coupling coefficient - coils 3 and 4
23 K35 0.6 -1 Coupling coefficient - coils 3 and 5
24 K36 -0.6 -1 Coupling coefficient - coils 3 and 6
25 K45 0.7 -1 Coupling coefficient - coils 4 and 5
26 K46 -0.7 -1 Coupling coefficient - coils 4 and 6
27 K56 0.8 -1 Coupling coefficient - coils 5 and 6
END_ELEMENT
MUC7 MUC7 35
1 L1 0.5nH 3 Self Inductance of Coil 1
2 R1 0.1ohm 1 Resistance of Coil 1
3 L2 1.0nH 3 Self Inductance of Coil 2
4 R2 0.2ohm 1 Resistance of Coil 2
5 L3 1.5nH 3 Self Inductance of Coil 3
6 R3 0.3ohm 1 Resistance of Coil 3
7 L4 2.0nH 3 Self Inductance of Coil 4
8 R4 0.4ohm 1 Resistance of Coil 4
9 L5 2.5nH 3 Self Inductance of Coil 5
10 R5 0.5ohm 1 Resistance of Coil 5
11 L6 3.0nH 3 Self Inductance of Coil 6
12 R6 0.6ohm 1 Resistance of Coil 6
13 L7 3.5nH 3 Self Inductance of Coil 7
14 R7 0.7ohm 1 Resistance of Coil 7
15 K12 0.1 -1 Coupling coefficient - coils 1 and 2
16 K13 -0.1 -1 Coupling coefficient - coils 1 and 3
17 K14 0.2 -1 Coupling coefficient - coils 1 and 4
18 K15 -0.2 -1 Coupling coefficient - coils 1 and 5
19 K16 0.3 -1 Coupling coefficient - coils 1 and 6
20 K17 -0.3 -1 Coupling coefficient - coils 1 and 7
21 K23 0.4 -1 Coupling coefficient - coils 2 and 3
22 K24 -0.4 -1 Coupling coefficient - coils 2 and 4
23 K25 0.5 -1 Coupling coefficient - coils 2 and 5
24 K26 -0.5 -1 Coupling coefficient - coils 2 and 6
25 K27 0.6 -1 Coupling coefficient - coils 2 and 7
26 K34 -0.6 -1 Coupling coefficient - coils 3 and 4
27 K35 0.7 -1 Coupling coefficient - coils 3 and 5
28 K36 -0.7 -1 Coupling coefficient - coils 3 and 6
29 K37 0.8 -1 Coupling coefficient - coils 3 and 7
30 K45 -0.8 -1 Coupling coefficient - coils 4 and 5
31 K46 0.9 -1 Coupling coefficient - coils 4 and 6
32 K47 -0.9 -1 Coupling coefficient - coils 4 and 7
33 K56 0.91 -1 Coupling coefficient - coils 5 and 6
34 K57 -0.91 -1 Coupling coefficient - coils 5 and 7
35 K67 0.92 -1 Coupling coefficient - coils 6 and 7
END_ELEMENT
MUC8 MUC8 44
1 L1 0.5nH 3 Self Inductance of Coil 1
2 R1 0.1ohm 1 Resistance of Coil 1
3 L2 1.0nH 3 Self Inductance of Coil 2
4 R2 0.2ohm 1 Resistance of Coil 2
5 L3 1.5nH 3 Self Inductance of Coil 3
6 R3 0.3ohm 1 Resistance of Coil 3
7 L4 2.0nH 3 Self Inductance of Coil 4
8 R4 0.4ohm 1 Resistance of Coil 4
9 L5 2.5nH 3 Self Inductance of Coil 5
10 R5 0.5ohm 1 Resistance of Coil 5
11 L6 3.0nH 3 Self Inductance of Coil 6
12 R6 0.6ohm 1 Resistance of Coil 6
13 L7 3.5nH 3 Self Inductance of Coil 7
14 R7 0.7ohm 1 Resistance of Coil 7
15 L8 4.0nH 3 Self Inductance of Coil 8
16 R8 0.8ohm 1 Resistance of Coil 8
17 K12 0.1 -1 Coupling coefficient - coils 1 and 2
18 K13 -0.1 -1 Coupling coefficient - coils 1 and 3
19 K14 0.2 -1 Coupling coefficient - coils 1 and 4
20 K15 -0.2 -1 Coupling coefficient - coils 1 and 5
21 K16 0.3 -1 Coupling coefficient - coils 1 and 6
22 K17 -0.3 -1 Coupling coefficient - coils 1 and 7
23 K18 0.4 -1 Coupling coefficient - coils 1 and 8
24 K23 -0.4 -1 Coupling coefficient - coils 2 and 3
25 K24 0.5 -1 Coupling coefficient - coils 2 and 4
26 K25 -0.5 -1 Coupling coefficient - coils 2 and 5
27 K26 0.6 -1 Coupling coefficient - coils 2 and 6
28 K27 -0.6 -1 Coupling coefficient - coils 2 and 7
29 K28 0.7 -1 Coupling coefficient - coils 2 and 8
30 K34 -0.7 -1 Coupling coefficient - coils 3 and 4
31 K35 0.8 -1 Coupling coefficient - coils 3 and 5
32 K36 -0.8 -1 Coupling coefficient - coils 3 and 6
33 K37 0.9 -1 Coupling coefficient - coils 3 and 7
34 K38 -0.9 -1 Coupling coefficient - coils 3 and 8
35 K45 0.91 -1 Coupling coefficient - coils 4 and 5
36 K46 -0.91 -1 Coupling coefficient - coils 4 and 6
37 K47 0.92 -1 Coupling coefficient - coils 4 and 7
38 K48 -0.92 -1 Coupling coefficient - coils 4 and 8
39 K56 0.93 -1 Coupling coefficient - coils 5 and 6
40 K57 -0.93 -1 Coupling coefficient - coils 5 and 7
41 K58 0.94 -1 Coupling coefficient - coils 5 and 8
42 K67 -0.94 -1 Coupling coefficient - coils 6 and 7
43 K68 0.95 -1 Coupling coefficient - coils 6 and 8
44 K78 -0.95 -1 Coupling coefficient - coils 7 and 8
END_ELEMENT
MUC9 MUC9 54
1 L1 0.5nH 3 Self Inductance of Coil 1
2 R1 0.1ohm 1 Resistance of Coil 1
3 L2 1.0nH 3 Self Inductance of Coil 2
4 R2 0.2ohm 1 Resistance of Coil 2
5 L3 1.5nH 3 Self Inductance of Coil 3
6 R3 0.3ohm 1 Resistance of Coil 3
7 L4 2.0nH 3 Self Inductance of Coil 4
8 R4 0.4ohm 1 Resistance of Coil 4
9 L5 2.5nH 3 Self Inductance of Coil 5
10 R5 0.5ohm 1 Resistance of Coil 5
11 L6 3.0nH 3 Self Inductance of Coil 6
12 R6 0.6ohm 1 Resistance of Coil 6
13 L7 3.5nH 3 Self Inductance of Coil 7
14 R7 0.7ohm 1 Resistance of Coil 7
15 L8 4.0nH 3 Self Inductance of Coil 8
16 R8 0.8ohm 1 Resistance of Coil 8
17 L9 4.5nH 3 Self Inductance of Coil 9
18 R9 0.9ohm 1 Resistance of Coil 9
19 K12 0.1 -1 Coupling coefficient - coils 1 and 2
20 K13 -0.1 -1 Coupling coefficient - coils 1 and 3
21 K14 0.2 -1 Coupling coefficient - coils 1 and 4
22 K15 -0.2 -1 Coupling coefficient - coils 1 and 5
23 K16 0.3 -1 Coupling coefficient - coils 1 and 6
24 K17 -0.3 -1 Coupling coefficient - coils 1 and 7
25 K18 0.4 -1 Coupling coefficient - coils 1 and 8
26 K19 -0.4 -1 Coupling coefficient - coils 1 and 9
27 K23 0.5 -1 Coupling coefficient - coils 2 and 3
28 K24 -0.5 -1 Coupling coefficient - coils 2 and 4
29 K25 0.6 -1 Coupling coefficient - coils 2 and 5
30 K26 -0.6 -1 Coupling coefficient - coils 2 and 6
31 K27 0.7 -1 Coupling coefficient - coils 2 and 7
32 K28 -0.7 -1 Coupling coefficient - coils 2 and 8
33 K29 0.8 -1 Coupling coefficient - coils 2 and 9
34 K34 -0.8 -1 Coupling coefficient - coils 3 and 4
35 K35 0.9 -1 Coupling coefficient - coils 3 and 5
36 K36 -0.9 -1 Coupling coefficient - coils 3 and 6
37 K37 0.91 -1 Coupling coefficient - coils 3 and 7
38 K38 -0.91 -1 Coupling coefficient - coils 3 and 8
39 K39 0.92 -1 Coupling coefficient - coils 3 and 9
40 K45 -0.92 -1 Coupling coefficient - coils 4 and 5
41 K46 0.93 -1 Coupling coefficient - coils 4 and 6
42 K47 -0.93 -1 Coupling coefficient - coils 4 and 7
43 K48 0.94 -1 Coupling coefficient - coils 4 and 8
44 K49 -0.94 -1 Coupling coefficient - coils 4 and 9
45 K56 0.95 -1 Coupling coefficient - coils 5 and 6
46 K57 -0.95 -1 Coupling coefficient - coils 5 and 7
47 K58 0.96 -1 Coupling coefficient - coils 5 and 8
48 K59 -0.96 -1 Coupling coefficient - coils 5 and 9
49 K67 0.97 -1 Coupling coefficient - coils 6 and 7
50 K68 -0.97 -1 Coupling coefficient - coils 6 and 8
51 K69 0.98 -1 Coupling coefficient - coils 6 and 9
52 K78 -0.98 -1 Coupling coefficient - coils 7 and 8
53 K79 0.99 -1 Coupling coefficient - coils 7 and 9
54 K89 -0.99 -1 Coupling coefficient - coils 8 and 9
END_ELEMENT
Map1Circle Map1Circle 1
1 Function list(our_map1cir=map1_circle(S,51)) -1 map1_circle(2x2 S_matrix,num_of_pts)
END_ELEMENT
Map2Circle Map2Circle 1
1 Function list(our_map2cir=map2_circle(S,51)) -1 map2_circle(2x2 S_matrix,num_of_pts)
END_ELEMENT
Materka_Model Materka_Model 44
1 NFET y_n1 -1 Model Type - YES or NO
2 PFET y_n0 -1 Model Type - YES or NO
3 Idsmod 4 -1 1=CQ 2=CC 3=Statz 4=Materka 5=Tajima 6=symbolic 7=TOM 8=Modified Materka
4 Idss '' 10 Model 4: Idss value, A
5 Vto '' 9 Value of V1 below which Ids = Ids(V1=VTO,Vds), V
6 Alpha '' 9 Saturation voltage, V
7 Beta2 '' -2 Coefficient for pinch-off change with respect to VDS, 1/V
8 Tau '' 6 Transit time under gate, S
9 Lambda '' -1 Channel length modulation parameter, 1/V
10 Rin '' 1 Channel resistance, Ohm
11 Fc '' -1 Coefficient for forward-bias depletion cap.
12 Gscap '' -1 0=none 1=linear 2=junction 3=Statz Charge 5=Statz Cap
13 Cgs '' 4 Zero-bias G-S junction cap., F
14 Gdcap '' -1 0=none 1=linear 2=junction 3=Statz Charge 5=Statz Cap
15 Cgd '' 4 Zero-bias G-D junction cap., F
16 Rd '' 1 Drain ohmic resistance, Ohm
17 Rg '' 1 Gate resistance, Ohm
18 Rs '' 1 Source ohmic resistance, Ohm
19 Ld '' 3 Drain inductance, H
20 Lg '' 3 Gate inductance, H
21 Ls '' 3 Source inductance, H
22 Gsfwd '' -1 0=none 1=linear 2=diode
23 Gsrev '' -1 0=none 1=linear 2=diode
24 Gdfwd '' -1 0=none 1=linear 2=diode
25 Gdrev '' -1 0=none 1=linear 2=diode
26 Vbi '' 9 Built-in gate potential, V
27 Vjr '' 9 Breakdown junction potential, V
28 Is '' 10 Gate junction saturation current, A
29 Ir '' 10 Gate rev saturation current, A
30 Imax '' 10 Explosion current, A
31 N '' -1 Gate Junction emission coefficient
32 Vbr '' 9 Gate junction reverse bias breakdown voltage (0. Means Infinity), V
33 Fnc '' 0 Flicker noise corner frequency
34 R '' -1 Gate noise coefficient
35 P '' -1 Drain noise coefficient
36 C '' -1 Gate-drain noise correlation coefficient.
37 Taumdl y_n0 -1 Use 2nd order Bessel polynomial to model tau effect in transient
38 Tnom '' 12 Nominal ambient temperature, Celsius
39 wVgfwd '' 9 Gate junction forward bias (warning), V
40 wBvgs '' 9 Gate-source reverse breakdown voltage (warning), V
41 wBvgd '' 9 Gate-drain reverse breakdown voltage (warning), V
42 wBvds '' 9 Drain-source breakdown voltage (warning), V
43 wIdsmax '' 10 Maximum drain-source current (warning), A
44 wPmax '' 8 Maximum power dissipation (warning), W
END_ELEMENT
MaxGain MaxGain 1
1 Function list(our_maxg=max_gain(S)) -1 max_gain(2x2 S_matrix)
END_ELEMENT
MeasEqn MeasEqn 1
1 Meas list(your_measurement_equation_here) -1 simulation measurement
END_ELEMENT
Mesfet_Form Mesfet_Form 81
1 NFET 0 -1 Model Type - YES or NO, (default: YES)
2 PFET 0 -1 Model Type - YES or NO, (default: NO )
3 Idsmod 0 -1 1=CQ 2=CC 3=Statz 4=Materka 5=Tajima 6=symbolic 7=TOM 8=Modified Materka
4 Vto '' 9 Value of V1 below which Ids = Ids(V1=VTO,Vds), V, (default: -2.0)
5 Beta '' -2 Coefficient for pinch-off change with respect to VDS, 1/V, (default: 1.0e-4)
6 Lambda '' -1 Channel length modulation parameter, 1/V, (default: 0.0)
7 Alpha '' -1 Hyperbolic tangent function parameter, 1/V, (default: 2.0)
8 Gamma '' -1 Current saturation parameter, 1/V, (default: 2.0)
9 A0 '' -1 Cubic polynomial IDS Equation Coefficient, A, (default: 0)
10 A1 '' -1 Cubic polynomial IDS Equation Coefficient, A/V, (default: 0)
11 A2 '' -1 Cubic polynomial IDS Equation Coefficient, A/V^2, (default: 0)
12 A3 '' -1 Cubic polynomial IDS Equation Coefficient, A/V^3, (default: 0)
13 Beta2 '' -2 Coefficient for pinch-off change with respect to VDS, 1/V, (default: 0)
14 Rds0 '' 1 DC conductance at Vgs=0, (default: 0)
15 Vds0 '' 9 Output voltage at which A0, A1, A2, A3 were evaluated, V, (default: 0)
16 Vdsdc '' 9 Vds at `rds0 meaured bias, (default: 0)
17 B '' -1 Doping tail extending parameter, (default: 0.3)
18 Vdss '' 9 Model 5: Drain current saturation voltage, V, (default: 1.0)
19 Idss '' 10 Saturation drain current, A, (default: 0)
20 Ta '' -2 Model 5: a coef, (default: -0.2)
21 Tb '' -2 Model 5: b coef, (default: 0.6)
22 Tm '' -2 Model 5: m coef, (default: 3.0)
23 Tau '' 6 Transit time under gate, S, (default: 0.0)
24 A5 '' -1 Time delay proportionality constant for Vds, (default: fixed at 0.0 )
25 Vcf '' -1 Ids control voltage = vcf(freq) * Vg(s,d)c, (default: Defaults to complex(1.0, 0.0) )
26 Tnom '' 12 Nominal ambient temperature, Celsius, (default: 25)
27 Idstc '' -1 Ids temperature coefficient, (default: 0.0)
28 Q '' -1 Power law exponent, dimensionless, (default: 2.0)
29 Tqdelta '' -1 drain current thermal factor, (default: 0.0)
30 Tqgamma '' -1 pinch-off change with vds, (default: 0.0)
31 Betatce '' -1 BETA Exponential Temperature Coefficient, %/Degree C, (default: 0.0)
32 Vtotc '' -1 VTO Temperature Coefficient, V/Degree C, (default: 0.0)
33 Gamds '' -1 describes effective pinch-off combined with Vds, (default: -0.01)
34 Ucrit '' -1 Parameter for critical field for mobility degradation, (default: 0.0)
35 Vgexp '' -1 Exponential parameter, (default: 2)
36 Rin '' 1 Channel resistance, Ohm, (default: 0.0)
37 Rgs '' 1 G-S resistance, Ohm, (default: 0.0)
38 Rgd '' 1 Gate Drain resistance, Ohm, (default: 0.0)
39 Rf '' 1 G-S effective forward-bias resistance (0. means infinity), Ohm, (default: 0.0)
40 Vgr '' -1 Vg(s,d)c includes voltage across Rg(s,d), (default: NO)
41 Fc '' -1 Coefficient for forward-bias depletion cap., (default: 0.5)
42 Delta '' -1 Output feedback coefficient, 1/W, (default: 0.2)
43 Gscap '' -1 0=none 1=linear 2=junction 3=Statz Charge 5=Statz Cap, (default: LINEAR_CAP)
44 Cgs '' 4 Zero-bias G-S junction cap., F, (default: 0.0)
45 Gdcap '' -1 0=none 1=linear 2=junction 3=Statz Charge 5=Statz Cap, (default: LINEAR_CAP)
46 Cgd '' 4 Zero-bias G-D junction cap., F, (default: 0.0)
47 Bgf '' -1 Backgate voltage = bgf(freq) * Vds, (default: defaulted to complex zero )
48 Tqm '' -1 Temperature coefficient for triquint junction capacitance, (default: 0.2)
49 Vmax '' 9 Maximum junction voltage before capacitance limiting, (default: 0.5)
50 Rg '' 1 Gate resistance, Ohm, (default: fixed at zero )
51 Rd '' 1 Drain ohmic resistance, Ohm, (default: fixed at zero )
52 Rs '' 1 Source ohmic resistance, Ohm, (default: fixed at zero )
53 Lg '' 3 Gate inductance, H, (default: fixed at 0.0 )
54 Ld '' 3 Drain inductance, H, (default: fixed at 0.0 )
55 Ls '' 3 Source inductance, H, (default: fixed at 0.0 )
56 Cds '' 4 Drain-source cap., F, (default: 0.0)
57 Crf '' 4 Used with RDS to model freq. dependent output conductance, F, (default: 0.0)
58 Rc '' 1 Used with CRF to model freq. dependent output conductance (0. means infinity), Ohm, (default: 0.0)
59 Trg1 '' -1 Linear temperature coefficient for RG 1/degC, (default: 0.0 )
60 Trd1 '' -1 Linear temperature coefficient for RD 1/degC, (default: 0.0 )
61 Trs1 '' -1 Linear temperature coefficient for RS 1/degC, (default: 0.0 )
62 Gsfwd '' -1 0=none 1=linear 2=diode, (default: linear)
63 Gsrev '' -1 0=none 1=linear 2=diode, (default: none)
64 Gdfwd '' -1 0=none 1=linear 2=diode, (default: none)
65 Gdrev '' -1 0=none 1=linear 2=diode, (default: linear)
66 R1 '' 1 Approximate breakdown resistance (0. means infinity), Ohm, (default: 0.0)
67 R2 '' 1 Resistance relating breakdown voltage to channel currents, Ohm, (default: fixed at 0.0 (infinity) )
68 Vbi '' 9 Built-in gate potential, V, (default: 0.85)
69 Vbr '' 9 Gate junction reverse bias breakdown voltage (0. Means Infinity), V, (default: 1e100)
70 Vjr '' 9 Breakdown junction potential, (default: 0.025)
71 Is '' 10 Gate junction saturation current, A, (default: 1.0e-14)
72 Ir '' 10 Gate rev saturation current, A, (default: 1.0e-14)
73 Imax '' 10 Explosion current, A, (default: 1.6)
74 Xti '' -1 Saturation Current Temperature Exponent, (default: 3.0)
75 Eg '' -1 Energy Gap for Temperature Effect on IS, (default: 1.11)
76 N '' -1 Gate Junction emission coefficient, (default: 1)
77 Fnc '' 0 Flicker noise corner frequency, Hertz (default: 0.0)
78 R '' -1 Gate noise coefficient, (default: 0.5 )
79 P '' -1 Drain noise coefficient, (default: 1.0)
80 C '' -1 Gate-drain noise correlation coefficient., (default: 0.9)
81 AllParams '' -1 Data Access Component (DAC) Based Parameters
END_ELEMENT
Mixer Mixer 27
1 SideBand UPPER -1 Produce UPPER, LOWER, or BOTH Sidebands at Output Port
2 ImageRej '' 13 Image Rejection in dB at Output Port
3 LO_Rej1 '' 13 LO to Input Port Rejection in dB
4 LO_Rej2 '' 13 LO to Output Port Rejection in dB
5 RF_Rej '' 13 Input to Output Port Rejection in dB
6 ConvGain dbpolar(0,0) -1 Conversion Gain, use x+j*y, polar(x,y), dbpolar(x,y) for complex value
7 S11 polar(0,0) -1 Forward Reflection Coefficient, use x+j*y, polar(x,y), dbpolar(x,y), VSWRpolar(x,y) for complex value
8 S22 0+j*0 -1 Reverse Reflection Coefficient, use x+j*y, polar(x,y), dbpolar(x,y), VSWRpolar(x,y) for complex value
9 S33 0. -1 LO Port Reflection Coefficient, use x+j*y, polar(x,y), dbpolar(x,y), VSWRpolar(x,y) for complex value
10 PminLO '' -1 Minimum LO Power in dBm before Starvation
11 NF '' 13 Noise Figure in dB
12 NFmin '' 13 Minimum Noise Figure at Sopt in dB
13 Sopt '' -1 Optimum Source Reflection for Minimum Noise Figure, use x+j*y, polar(x,y), dbpolar(x,y) for complex value
14 Rn '' 1 Equivalent Noise Resistance
15 Z1 '' 1 Reference Impedance for Port1
16 Z2 '' 1 Reference Impedance for Port2
17 Z3 '' 1 Reference Impedance for Port3
18 GainCompType LIST -1 Gain Compression Type, parameters from following LIST or in FILE
19 GainCompFreq '' 0 Frequency at which Gain Compression is specified
20 ReferToInput OUTPUT -1 Power Levels refer to INPUT or OUTPUT
21 SOI '' -1 Second Order Intercept in dBm
22 TOI '' -1 Third Order Intercept in dBm
23 Psat '' -1 Power Saturation Point in dBm
24 GainCompSat '' 13 Gain Compression at PSat in dB
25 GainCompPower '' -1 Power Level in dBm at Gain Compression Specified by GainComp
26 GainComp 1.dB 13 Gain Compression in dB at GainCompPower
27 GainCompFile '' -2 Filename for Gain Compression Data
END_ELEMENT
MixerIMT MixerIMT 15
1 SS_SideBand UPPER -1 Produce UPPER or LOWER Sideband at Output Port For Linear Analysis
2 ConvGain dbpolar(0,0) -1 Conversion Gain, use x+j*y, polar(x,y), dbpolar(x,y) for complex value
3 S11 polar(0,0) -1 Forward Reflection Coefficient, use x+j*y, polar(x,y), dbpolar(x,y), VSWRpolar(x,y) for complex value
4 S22 0+j*0 -1 Reverse Reflection Coefficient, use x+j*y, polar(x,y), dbpolar(x,y), VSWRpolar(x,y) for complex value
5 S33 0. -1 LO Port Reflection Coefficient, use x+j*y, polar(x,y), dbpolar(x,y), VSWRpolar(x,y) for complex value
6 NF '' 13 Noise Figure in dB
7 NFmin '' 13 Minimum Noise Figure at Sopt in dB
8 Sopt '' -1 Optimum Source Reflection for Minimum Noise Figure, use x+j*y, polar(x,y), dbpolar(x,y) for complex value
9 Rn '' 1 Equivalent Noise Resistance
10 R1 50.ohm 1 Reference Resistance for Port1
11 R2 50.ohm 1 Reference Resistance for Port2
12 R3 50.ohm 1 Reference Resistance for Port3
13 InThresh '' 9 Voltage Threshold for Input RF
14 LoThresh '' 9 Voltage Threshold for Input LO
15 IMT_File '' -2 Filename Containing the Intermodulation Table
END_ELEMENT
Modified_Materka_Model Modified_Materka_Model 49
1 NFET y_n1 -1 Model Type - YES or NO
2 PFET y_n0 -1 Model Type - YES or NO
3 Idsmod 8 -1 1=CQ 2=CC 3=Statz 4=Materka 5=Tajima 6=symbolic 7=TOM 8=Modified Materka
4 Idss '' 10 Model 4: Idss value, A
5 Vto '' 9 Value of V1 below which Ids = Ids(V1=VTO,Vds), V
6 Beta2 '' -2 Coefficient for pinch-off change with respect to VDS, 1/V
7 Ee '' -2 Exponent defining dependence of saturation current
8 Ke '' 9 Parameter describing dependence on gate voltage, V
9 Kg '' 9 Dependence on vgs of drain slope in linear region, V
10 Sl '' -2 Linear region slope of vgs=0 drain characteristic
11 Ss '' -2 Saturation region drain slope characteristic at vgs=0
12 Tau '' 6 Transit time under gate, S
13 Rgs '' 1 Channel resistance, Ohm
14 Rgd '' 1 Gate Drain resistance, Ohm
15 Fc '' -1 Coefficient for forward-bias depletion cap.
16 Gscap '' -1 0=none 1=linear 2=junction 3=Statz Charge 5=Statz Cap
17 Cgs '' 4 Zero-bias G-S junction cap., F
18 Gdcap '' -1 0=none 1=linear 2=junction 3=Statz Charge 5=Statz Cap
19 Cgd '' 4 Zero-bias G-D junction cap., F
20 Rd '' 1 Drain ohmic resistance, Ohm
21 Rg '' 1 Gate resistance, Ohm
22 Rs '' 1 Source ohmic resistance, Ohm
23 Ld '' 3 Drain inductance, H
24 Lg '' 3 Gate inductance, H
25 Ls '' 3 Source inductance, H
26 Cds '' 4 Drain-source cap., F
27 Gsfwd '' -1 0=none 1=linear 2=diode
28 Gsrev '' -1 0=none 1=linear 2=diode
29 Gdfwd '' -1 0=none 1=linear 2=diode
30 Gdrev '' -1 0=none 1=linear 2=diode
31 Vbi '' 9 Built-in gate potential, V
32 Vjr '' 9 Breakdown junction potential, V
33 Is '' 10 Gate junction saturation current, A
34 Ir '' 10 Gate rev saturation current, A
35 Imax '' 10 Explosion current, A
36 N '' -1 Gate Junction emission coefficient
37 Fnc '' 0 Flicker noise corner frequency
38 Lambda '' -1 Channel length modulation parameter, 1/V
39 Vbr '' 9 Gate junction reverse bias breakdown voltage (0. Means Infinity), V
40 R '' -1 Gate noise coefficient
41 P '' -1 Drain noise coefficient
42 C '' -1 Gate-drain noise correlation coefficient.
43 Taumdl y_n0 -1 Use 2nd order Bessel polynomial to model tau effect in transient
44 wVgfwd '' 9 Gate junction forward bias (warning), V
45 wBvgs '' 9 Gate-source reverse breakdown voltage (warning), V
46 wBvgd '' 9 Gate-drain reverse breakdown voltage (warning), V
47 wBvds '' 9 Drain-source breakdown voltage (warning), V
48 wIdsmax '' 10 Maximum drain-source current (warning), A
49 wPmax '' 8 Maximum power dissipation (warning), W
END_ELEMENT
Mu Mu 1
1 Function list(our_mu=mu(S)) -1 mu(2x2 S_matrix)
END_ELEMENT
MuPrime MuPrime 1
1 Function list(our_mup=mu_prime(S)) -1 mu_prime(2x2 S_matrix)
END_ELEMENT
Mutual Mutual 4
1 K 0.5 -1 Mutual inductor coupling coefficient; -1.0<= k <=1.0
2 M '' 3 Mutual inductance
3 Inductor1 '' -2 ID of Inductor one name
4 Inductor2 '' -2 ID of Inductor two name
END_ELEMENT
N_StateDemod N_StateDemod 2
1 Fnom 1GHz 0 Nominal Input Frequency
2 StateArray list(1+j,-1+j,-1-j,1-j) -1 Complex Array of State Values
END_ELEMENT
N_StateMod N_StateMod 4
1 MaxStates 4 -1 Maximum Number of Input States
2 StateArray list(1+j,-1+j,-1-j,1-j) -1 Complex Array of State Values
3 Fnom 1GHz 0 Nominal Input Frequency
4 Rout 50ohm 1 Output Resistance
END_ELEMENT
NodeSet NodeSet 2
1 V 0V 9 Initial node voltage
2 R '' 1 Connection resistance
END_ELEMENT
NodeSetByName NodeSetByName 1
1 NodeName list(prm("NodeSetForm",,0V,)) -1 NodeName/Inital voltage/Connection resistance
END_ELEMENT
NoiseCorr NoiseCorr 3
1 CorrCoeff 0.5 -1 Correlation Coefficient
2 Source1 '' -1 Source 1 name
3 Source2 '' -1 Source 2 name
END_ELEMENT
Noisy2Port Noisy2Port 3
1 NFmin 1dB 13 Minimum noise figure
2 Rn 50ohm 1 Noise resistance
3 Sopt 0.0 -1 Optimum match for minimum noise figure
END_ELEMENT
NonlinC NonlinC 1
1 Coeff list(1,1) -1 List of coefficients that describe a polynomial
END_ELEMENT
NonlinCCCS NonlinCCCS 1
1 Coeff list(1,1) -1 List of coefficients that describe a polynomial
END_ELEMENT
NonlinCCVS NonlinCCVS 1
1 Coeff list(1,1) -1 List of coefficients that describe a polynomial
END_ELEMENT
NonlinL NonlinL 1
1 Coeff list(1,1) -1 List of coefficients that describe a polynomial
END_ELEMENT
NonlinVCCS NonlinVCCS 1
1 Coeff list(1,1) -1 List of coefficients that describe a polynomial
END_ELEMENT
NonlinVCVS NonlinVCVS 1
1 Coeff list(1,1) -1 List of coefficients that describe a polynomial
END_ELEMENT
NsCircle NsCircle 1
1 Function list(our_nscir=ns_circle(nf1,NFmin,Sopt,Rn,51)) -1 ns_circle(2x2 S_matrix,num_of_pts)
END_ELEMENT
NsPwrInt NsPwrInt 1
1 Function list(our_nsint=ns_pwr_int(S21,nf1,1GHz)) -1 ns_pwr_int(complex_transmission_coeff,noise_figure,res_BW)
END_ELEMENT
NsPwrRefBW NsPwrRefBW 1
1 Function list(our_nsbw=ns_pwr_ref_bw(S21,nf1,1GHz)) -1 ns_pwr_ref_bw(complex_transmission_coeff,noise_figure,res_BW)
END_ELEMENT
OpAmp OpAmp 21
1 Gain 100.dB 13 Open loop DC power gain of amplifier in dB
2 CMR '' 13 Common mode rejection ratio in dB
3 Rout 100.ohm 1 Output resistance
4 RDiff 1.Mohm 1 Differential input resistance
5 CDiff 0.F 4 Differential input capacitance
6 RCom 1.Mohm 1 common mode input resistance
7 CCom 0.F 4 Common mode input capacitance
8 SlewRate 1.e+6 -1 Signal slew rate in Volts/sec
9 IOS 0.A 10 Input offset current
10 VOS 0.V 9 Input offset voltage
11 BW 1.MHz 0 Unity gain bandwidth
12 Pole1 '' 0 Dominant pole frequency(overides BW)
13 Pole2 '' 0 Additional higher order pole frequency
14 Pole3 '' 0 Additional higher order pole frequency
15 Pole4 '' 0 Additional higher order pole frequency
16 Pole5 '' 0 Additional higher order pole frequency
17 Zero1 '' 0 Feedforward zero frequency
18 Inoise 0. -1 Input spectral noise current in Amperes/sqrt(Hz)
19 Vnoise 0. -1 Input spectral noise voltage in Volts/sqrt(Hz)
20 VEE -15.V 9 Negative supply voltage
21 VCC 15.V 9 Positive supply voltage
END_ELEMENT
OpAmpIdeal OpAmpIdeal 7
1 Gain 1. -1 Magnitude of Open Loop DC Voltage Gain, use x+j*y, polar(x,y), dbpolar(x,y) for complex value
2 Z1 '' 1 Input Impedance, Inverting Terminal
3 Z2 '' 1 Input Impedance, non-inverting Terminal
4 Z3 '' 1 Output Impedance
5 Z4 '' 1 Leakage Impedance, Inverting to Non-Inverting Terminal
6 Freq3db '' 0 Frequency at Which Gain Magnitude is Down by 3dB
7 Delay 0.sec 6 Time Delay Associated with Gain
END_ELEMENT
Optim Optim 12
1 OptimType random -1 Type of minimization method to use: gucker, hp_vmo, sga_sp...
2 ErrorForm L2 -1 Error function formulation: L1, L2, mm, neg_L2...
3 MaxIters '' -1 Maximum number of iterations/trials for the gradient/random optimizers respectively
4 P '' -1 Order of optimization norm
5 DesiredError '' -1 Maximum acceptable error function
6 StatusLevel '' -1 Degree of annotation
7 SetBestValues No -1 Keep best values for parent optimization.
8 Seed '' -1 Seed for random optimizer
9 SaveSolns No -1 Flag to send analysis solutions to dataset
10 SaveOptimVars No -1 Send opt var values to dataset
11 SaveGoals No -1 Send optgoal values to dataset
12 GoalName '' -1 Name of goal(s) to use in optimization (repeatable)
END_ELEMENT
Options Options 25
1 Temp 25C 12 Temperature
2 TopologyCheck yes -2 Check circuit topology for degeneracies
3 ForceS_Params yes -2 Force S-parameter calculations where ever possible
4 MaxSpectralSize 512 -1 Maximum spectral array manager allocation size
5 MaxDeltaV '' 9 Maximum voltage step in DC analysis
6 DC_ConvMode '' -1 Convergence mode for DC analysis
7 V_RelTol 1e-6 -1 Relative voltage convergence criterion
8 V_AbsTol '' 9 Absolute voltage convergence criterion
9 I_RelTol 1e-6 -1 Relative current convergence criterion
10 I_AbsTol '' 10 Absolute current convergence criterion
11 FreqRelTol '' -1 Relative frequency convergence criterion
12 FreqAbsTol '' 0 Absolute frequency convergence criterion
13 GiveAllWarnings yes -2 Give all warning messages
14 MaxWarnings 10 -1 Maximum number of warning messages
15 IgnoreShorts '' -2 Silently ignore shorted device
16 SaveBranchCurrents no -2 Send all branch currents to raw-file
17 OutputInternalNodes no -2 Output internal node voltages
18 PivotRelThresh '' -1 Relative pivot threshold
19 PivotAbsThresh '' -1 Absolute pivot threshold
20 Vmin '' 9 Minimum voltage present in circuit
21 Vmax '' 9 Maximum voltage present in circuit
22 MinEpsilon '' -1 Minimum epsilon in finite difference calculations
23 ForceM_Params yes -2 Use M-parameter (RLCG) calculations wherever possible
24 TimeStep '' 6 Timestep value for steady-state analyses
25 Other '' -1 Output string to netlist
END_ELEMENT
OscPort OscPort 6
1 V '' 9 Initial guess at fundamental voltage
2 Z 1.1ohm 1 Initial value for Z0
3 NumOctaves 2 -1 Number of octaves to search
4 Steps 10 -1 Number of steps per search octave
5 FundIndex 1 -1 Fundamental number for oscillator
6 MaxLoopGainStep '' -1 Maximum arc length continuation step size during loop-gain search
END_ELEMENT
OscTest OscTest 5
1 Port_Number 1 -1 Number of Port
2 Z 1.1ohm 1 Initial value for Z0
3 Start 1.0GHz 0 Start frequency
4 Stop 10.0GHz 0 Stop frequency
5 Points 101 -1 Number of frequency Points
END_ELEMENT
P2D P2D 61
1 MaxOrder 4 -1 Maximum combined order to be considered
2 Freq '' 0 Frequency of fundamental
3 Order 3 -1 Maximum order of fundamental to be considered
4 NestLevel 2 -1 Levels of subcircuits to output
5 StatusLevel 2 -1 Degree of annotation
6 FundOversample 1 -1 Oversampling ratio for FFT
7 Oversample '' -1 Oversampling ratio for FFT
8 PackFFT '' -1 Pack FFT in multi-tone analysis
9 MaxIters 10 -1 Max number of iterations
10 GuardThresh '' -1 Guard threshold
11 SamanskiiConstant 2 -1 Samanskii constant
12 Restart No -1 Do not use last solution as initial guess
13 ArcLevelMaxStep 0.0 -1 Maximum arc-length step for source-level continuation
14 MaxStepRatio 100 -1 Ratio of maximum to given number of steps
15 MaxShrinkage 1.0e-5 -1 Maximum step shrinkage
16 OutputAllSolns '' -1 Output spectra at all computed steps when sweeping
17 ArcMaxStep 0.0 -1 Maximum arc-length step
18 ArcMinValue '' -1 Minimum value for parameter during arclength continuation
19 ArcMaxValue '' -1 Maximum value for parameter during arclength continuation
20 UseKrylov '' -1 Use Krylov solver
21 UseInitialAWHB '' -1 Use initial AWHB stage before Krylov
22 AWHB_WindowSize '' -1 AWHB window size
23 GMRES_Restart '' -1 GMRES iterations before auto-restart
24 KrylovUsePacking '' -1 Use Krylov spectral packing
25 KrylovPackingThresh '' -1 Krylov bandwidth threshold
26 KrylovTightTol '' -1 GMRES tolerance
27 KrylovLooseTol '' -1 Loose tolerance for Krylov loop
28 KrylovLooseIters '' -1 Min number of iterations to invoke loose tolerance
29 KrylovMaxIters '' -1 Maximum number of GMRES iterations
30 GMRES_Orthog '' -1 Re-orthogonalize at every GMRES iteration
31 CalcS_Params Yes -1 Calculate large-signal S-params
32 P2D_FileName default.p2d -1 Name for P2D file
33 SweepVar P2D_Freq -1 Name of variable or parameter to be swept
34 UseSweepPlan '' -1 Flag to indicate use of Frequency SweepPlan
35 LSSP_FreqPlan '' -1 Instance/path name for frequency sweep values for P2D files
36 Freq_Start 1.0GHz 0 Start frequency
37 Freq_Stop 10.0GHz 0 Stop frequency
38 Freq_Step 1.0GHz 0 Step frequency
39 Freq_Center '' 0 Center frequency
40 Freq_Span '' 0 Span
41 Freq_Lin '' -1 Linear sweep
42 Freq_Dec '' -1 Number of points per decade
43 Freq_Log '' -1 Log sweep
44 Freq_Reverse '' -1 Reverse sweep
45 Freq_Pt '' 0 Frequency value if its not being swept
46 Freq_Sort 'LINEAR START STEP' -1 Sort frequencies
47 Power_SweepVar power -1 Name of variable or parameter to be swept
48 Power_UseSweepPlan '' -1 Flag to indicate use of power SweepPlan
49 LSSP_PowerPlan '' -1 Instance/path name for power sweep values for P2D files
50 Power_Start -20 -1 Start value for power in dBm
51 Power_Stop 0 -1 Stop value for power in dBm
52 Power_Step 1 -1 Step value for power in dBm
53 Power_Center '' -1 Center value for power in dBm
54 Power_Span '' 8 Span for power
55 Power_Lin '' -1 Linear sweep for power
56 Power_Dec '' -1 Number of points per decade for power
57 Power_Log '' -1 Log sweep for power
58 Power_Reverse '' -1 Reverse sweep for power
59 Power_Pt '' 0 Single point for power
60 Power_Sort 'LINEAR START STEP' -1 Sort power
61 Other '' -1 Output string to netlist
END_ELEMENT
PAE PAE 1
1 Function list(our_pae=pae(vout,0,vin,0,vdc,0,I_Probe1.i,I_Probe2.i,I_Probe3.i,{1},{1})) -1 pae(vPlusOut,vMinusOut,vPlusIn,vMinusIn,vPlusDC,vMinusDC,currentOut,currentIn,currentDC,outFreq,inFreq)
END_ELEMENT
PCBEND PCBEND 6
1 Subst PCSub1 -1 Substrate instance name
2 W 25.0mils 5 Conductor width
3 CLayer 1 -1 Conductor layer number
4 Angle 90deg 7 Angle of bend
5 M 0.6 -1 Miter fraction
6 Temp '' 12 Physical temperature
END_ELEMENT
PCCORN PCCORN 4
1 Subst PCSub1 -1 Substrate instance name
2 W 10.0mils 5 Conductor width
3 CLayer 1 -1 Conductor layer number
4 Temp '' 12 Physical temperature
END_ELEMENT
PCCROS PCCROS 7
1 Subst PCSub1 -1 Substrate instance name
2 W1 10.0mils 5 Width at pin 1
3 W2 10.0mils 5 Width at pin 2
4 W3 10.0mils 5 Width at pin 3
5 W4 10.0mils 5 Width at pin 4
6 CLayer 1 -1 Conductor layer number
7 Temp '' 12 Physical temperature
END_ELEMENT
PCCURVE PCCURVE 6
1 Subst PCSub1 -1 Substrate instance name
2 W 25.0mils 5 Conductor width
3 CLayer 1 -1 Conductor layer number
4 Angle -90deg 7 Angle subtended by the bend
5 Radius 100.0mils 5 Radius (measured to center of conductor)
6 Temp '' 12 Physical temperature
END_ELEMENT
PCILC PCILC 9
1 Subst PCSub1 -1 Substrate instance name
2 D 10.0mils 5 Diameter of via hole
3 CLayer1 1 -1 Conductor layer number at pin 1
4 CLayer2 2 -1 Conductor layer number at pin 2
5 Temp '' 12 Physical temperature
6 Ang 90deg 7 (for Layout option) Angle of orientation at pin 2
7 W1 10.0mils 5 (for Layout option) Width of square pad or diameter of circular pad on layer CLayer1
8 W2 10.0mils 5 (for Layout option) Width of square pad or diameter of circular pad on layer CLayer2
9 Type pcilc_square -1 (for Layout option) Type of Via pad, square or circular
END_ELEMENT
PCLIN1 PCLIN1 6
1 Subst PCSub1 -1 Substrate instance name
2 W 10.0mils 5 Width of line
3 S1 100.0mils 5 Distance from line to left wall
4 CLayer1 1 -1 Conductor layer number
5 L 25.0mils 5 Length of line
6 Temp '' 12 Physical temperature
END_ELEMENT
PCLIN10 PCLIN10 33
1 Subst PCSub1 -1 Substrate instance name
2 W1 10.0mils 5 Width of line #1
3 S1 100.0mils 5 Distance from line #1 to left wall
4 CLayer1 1 -1 Conductor layer number - line #1
5 W2 10.0mils 5 Width of line #2
6 S2 115.0mils 5 Distance from line #2 to left wall
7 CLayer2 1 -1 Conductor layer number - line #2
8 W3 10.0mils 5 Width of line #3
9 S3 130.0mils 5 Distance from line #3 to left wall
10 CLayer3 1 -1 Conductor layer number - line #3
11 W4 10.0mils 5 Width of line #4
12 S4 145.0mils 5 Distance from line #4 to left wall
13 CLayer4 1 -1 Conductor layer number - line #4
14 W5 10.0mils 5 Width of line #5
15 S5 160.0mils 5 Distance from line #5 to left wall
16 CLayer5 1 -1 Conductor layer number - line #5
17 W6 10.0mils 5 Width of line #6
18 S6 175.0mils 5 Distance from line #6 to left wall
19 CLayer6 1 -1 Conductor layer number - line #6
20 W7 10.0mils 5 Width of line #7
21 S7 190.0mils 5 Distance from line #7 to left wall
22 CLayer7 1 -1 Conductor layer number - line #7
23 W8 10.0mils 5 Width of line #8
24 S8 205.0mils 5 Distance from line #8 to left wall
25 CLayer8 1 -1 Conductor layer number - line #8
26 W9 10.0mils 5 Width of line #9
27 S9 220.0mils 5 Distance from line #9 to left wall
28 CLayer9 1 -1 Conductor layer number - line #9
29 W10 10.0mils 5 Width of line #10
30 S10 235.0mils 5 Distance from line #10 to left wall
31 CLayer10 1 -1 Conductor layer number - line #10
32 L 25.0mils 5 Length of the lines
33 Temp '' 12 Physical temperature
END_ELEMENT
PCLIN2 PCLIN2 9
1 Subst PCSub1 -1 Substrate instance name
2 W1 10.0mils 5 Width of line #1
3 S1 100.0mils 5 Distance from line #1 to left wall
4 CLayer1 1 -1 Conductor layer number - line #1
5 W2 10.0mils 5 Width of line #2
6 S2 115.0mils 5 Distance from line #2 to left wall
7 CLayer2 1 -1 Conductor layer number - line #2
8 L 25.0mils 5 Length of the lines
9 Temp '' 12 Physical temperature
END_ELEMENT
PCLIN3 PCLIN3 12
1 Subst PCSub1 -1 Substrate instance name
2 W1 10.0mils 5 Width of line #1
3 S1 100.0mils 5 Distance from line #1 to left wall
4 CLayer1 1 -1 Conductor layer number - line #1
5 W2 10.0mils 5 Width of line #2
6 S2 115.0mils 5 Distance from line #2 to left wall
7 CLayer2 1 -1 Conductor layer number - line #2
8 W3 10.0mils 5 Width of line #3
9 S3 130.0mils 5 Distance from line #3 to left wall
10 CLayer3 1 -1 Conductor layer number - line #3
11 L 25.0mils 5 Length of the lines
12 Temp '' 12 Physical temperature
END_ELEMENT
PCLIN4 PCLIN4 15
1 Subst PCSub1 -1 Substrate instance name
2 W1 10.0mils 5 Width of line #1
3 S1 100.0mils 5 Distance from line #1 to left wall
4 CLayer1 1 -1 Conductor layer number - line #1
5 W2 10.0mils 5 Width of line #2
6 S2 115.0mils 5 Distance from line #2 to left wall
7 CLayer2 1 -1 Conductor layer number - line #2
8 W3 10.0mils 5 Width of line #3
9 S3 130.0mils 5 Distance from line #3 to left wall
10 CLayer3 1 -1 Conductor layer number - line #3
11 W4 10.0mils 5 Width of line #4
12 S4 145.0mils 5 Distance from line #4 to left wall
13 CLayer4 1 -1 Conductor layer number - line #4
14 L 25.0mils 5 Length of the lines
15 Temp '' 12 Physical temperature
END_ELEMENT
PCLIN5 PCLIN5 18
1 Subst PCSub1 -1 Substrate instance name
2 W1 10.0mils 5 Width of line #1
3 S1 100.0mils 5 Distance from line #1 to left wall
4 CLayer1 1 -1 Conductor layer number - line #1
5 W2 10.0mils 5 Width of line #2
6 S2 115.0mils 5 Distance from line #2 to left wall
7 CLayer2 1 -1 Conductor layer number - line #2
8 W3 10.0mils 5 Width of line #3
9 S3 130.0mils 5 Distance from line #3 to left wall
10 CLayer3 1 -1 Conductor layer number - line #3
11 W4 10.0mils 5 Width of line #4
12 S4 145.0mils 5 Distance from line #4 to left wall
13 CLayer4 1 -1 Conductor layer number - line #4
14 W5 10.0mils 5 Width of line #5
15 S5 160.0mils 5 Distance from line #5 to left wall
16 CLayer5 1 -1 Conductor layer number - line #5
17 L 25.0mils 5 Length of the lines
18 Temp '' 12 Physical temperature
END_ELEMENT
PCLIN6 PCLIN6 21
1 Subst PCSub1 -1 Substrate instance name
2 W1 10.0mils 5 Width of line #1
3 S1 100.0mils 5 Distance from line #1 to left wall
4 CLayer1 1 -1 Conductor layer number - line #1
5 W2 10.0mils 5 Width of line #2
6 S2 115.0mils 5 Distance from line #2 to left wall
7 CLayer2 1 -1 Conductor layer number - line #2
8 W3 10.0mils 5 Width of line #3
9 S3 130.0mils 5 Distance from line #3 to left wall
10 CLayer3 1 -1 Conductor layer number - line #3
11 W4 10.0mils 5 Width of line #4
12 S4 145.0mils 5 Distance from line #4 to left wall
13 CLayer4 1 -1 Conductor layer number - line #4
14 W5 10.0mils 5 Width of line #5
15 S5 160.0mils 5 Distance from line #5 to left wall
16 CLayer5 1 -1 Conductor layer number - line #5
17 W6 10.0mils 5 Width of line #6
18 S6 175.0mils 5 Distance from line #6 to left wall
19 CLayer6 1 -1 Conductor layer number - line #6
20 L 25.0mils 5 Length of the lines
21 Temp '' 12 Physical temperature
END_ELEMENT
PCLIN7 PCLIN7 24
1 Subst PCSub1 -1 Substrate instance name
2 W1 10.0mils 5 Width of line #1
3 S1 100.0mils 5 Distance from line #1 to left wall
4 CLayer1 1 -1 Conductor layer number - line #1
5 W2 10.0mils 5 Width of line #2
6 S2 115.0mils 5 Distance from line #2 to left wall
7 CLayer2 1 -1 Conductor layer number - line #2
8 W3 10.0mils 5 Width of line #3
9 S3 130.0mils 5 Distance from line #3 to left wall
10 CLayer3 1 -1 Conductor layer number - line #3
11 W4 10.0mils 5 Width of line #4
12 S4 145.0mils 5 Distance from line #4 to left wall
13 CLayer4 1 -1 Conductor layer number - line #4
14 W5 10.0mils 5 Width of line #5
15 S5 160.0mils 5 Distance from line #5 to left wall
16 CLayer5 1 -1 Conductor layer number - line #5
17 W6 10.0mils 5 Width of line #6
18 S6 175.0mils 5 Distance from line #6 to left wall
19 CLayer6 1 -1 Conductor layer number - line #6
20 W7 10.0mils 5 Width of line #7
21 S7 190.0mils 5 Distance from line #7 to left wall
22 CLayer7 1 -1 Conductor layer number - line #7
23 L 25.0mils 5 Length of the lines
24 Temp '' 12 Physical temperature
END_ELEMENT
PCLIN8 PCLIN8 27
1 Subst PCSub1 -1 Substrate instance name
2 W1 10.0mils 5 Width of line #1
3 S1 100.0mils 5 Distance from line #1 to left wall
4 CLayer1 1 -1 Conductor layer number - line #1
5 W2 10.0mils 5 Width of line #2
6 S2 115.0mils 5 Distance from line #2 to left wall
7 CLayer2 1 -1 Conductor layer number - line #2
8 W3 10.0mils 5 Width of line #3
9 S3 130.0mils 5 Distance from line #3 to left wall
10 CLayer3 1 -1 Conductor layer number - line #3
11 W4 10.0mils 5 Width of line #4
12 S4 145.0mils 5 Distance from line #4 to left wall
13 CLayer4 1 -1 Conductor layer number - line #4
14 W5 10.0mils 5 Width of line #5
15 S5 160.0mils 5 Distance from line #5 to left wall
16 CLayer5 1 -1 Conductor layer number - line #5
17 W6 10.0mils 5 Width of line #6
18 S6 175.0mils 5 Distance from line #6 to left wall
19 CLayer6 1 -1 Conductor layer number - line #6
20 W7 10.0mils 5 Width of line #7
21 S7 190.0mils 5 Distance from line #7 to left wall
22 CLayer7 1 -1 Conductor layer number - line #7
23 W8 10.0mils 5 Width of line #8
24 S8 205.0mils 5 Distance from line #8 to left wall
25 CLayer8 1 -1 Conductor layer number - line #8
26 L 25.0mils 5 Length of the lines
27 Temp '' 12 Physical temperature
END_ELEMENT
PCLIN9 PCLIN9 30
1 Subst PCSub1 -1 Substrate instance name
2 W1 10.0mils 5 Width of line #1
3 S1 100.0mils 5 Distance from line #1 to left wall
4 CLayer1 1 -1 Conductor layer number - line #1
5 W2 10.0mils 5 Width of line #2
6 S2 115.0mils 5 Distance from line #2 to left wall
7 CLayer2 1 -1 Conductor layer number - line #2
8 W3 10.0mils 5 Width of line #3
9 S3 130.0mils 5 Distance from line #3 to left wall
10 CLayer3 1 -1 Conductor layer number - line #3
11 W4 10.0mils 5 Width of line #4
12 S4 145.0mils 5 Distance from line #4 to left wall
13 CLayer4 1 -1 Conductor layer number - line #4
14 W5 10.0mils 5 Width of line #5
15 S5 160.0mils 5 Distance from line #5 to left wall
16 CLayer5 1 -1 Conductor layer number - line #5
17 W6 10.0mils 5 Width of line #6
18 S6 175.0mils 5 Distance from line #6 to left wall
19 CLayer6 1 -1 Conductor layer number - line #6
20 W7 10.0mils 5 Width of line #7
21 S7 190.0mils 5 Distance from line #7 to left wall
22 CLayer7 1 -1 Conductor layer number - line #7
23 W8 10.0mils 5 Width of line #8
24 S8 205.0mils 5 Distance from line #8 to left wall
25 CLayer8 1 -1 Conductor layer number - line #8
26 W9 10.0mils 5 Width of line #9
27 S9 220.0mils 5 Distance from line #9 to left wall
28 CLayer9 1 -1 Conductor layer number - line #9
29 L 25.0mils 5 Length of the lines
30 Temp '' 12 Physical temperature
END_ELEMENT
PCSTEP PCSTEP 5
1 Subst PCSub1 -1 Substrate instance name
2 W1 25.0mils 5 Conductor width at pin 1
3 W2 15.0mils 5 Conductor width at pin 2
4 CLayer 1 -1 Conductor layer number
5 Temp '' 12 Physical temperature
END_ELEMENT
PCSUB1 PCSUB1 8
1 H[1] 25.0mils 5 Thickness of dielectric layer #1
2 Er 10.0 -1 Dielectric constant
3 Cond 1.0E+306 -1 Conductor conductivity
4 Hu 100.0mils 5 Upper ground plane spacing
5 Hl 100.0mils 5 Lower ground plane spacing
6 T 1.0mils 5 Metal thickness
7 W 500.0mils 5 Distance between sidewalls
8 Sigma 0 -1 Dielectric conductivity
END_ELEMENT
PCSUB2 PCSUB2 9
1 H[1] 25.0mils 5 Thickness of dielectric layer #1
2 H[2] 25.0mils 5 Thickness of dielectric layer #2
3 Er 10.0 -1 Dielectric constant
4 Cond 1.0E+306 -1 Conductor conductivity
5 Hu 100.0mils 5 Upper ground plane spacing
6 Hl 100.0mils 5 Lower ground plane spacing
7 T 1.0mils 5 Metal thickness
8 W 500.0mils 5 Distance between sidewalls
9 Sigma 0 -1 Dielectric conductivity
END_ELEMENT
PCSUB3 PCSUB3 10
1 H[1] 25.0mils 5 Thickness of dielectric layer #1
2 H[2] 25.0mils 5 Thickness of dielectric layer #2
3 H[3] 25.0mils 5 Thickness of dielectric layer #3
4 Er 10.0 -1 Dielectric constant
5 Cond 1.0E+306 -1 Conductor conductivity
6 Hu 100.0mils 5 Upper ground plane spacing
7 Hl 100.0mils 5 Lower ground plane spacing
8 T 1.0mils 5 Metal thickness
9 W 500.0mils 5 Distance between sidewalls
10 Sigma 0 -1 Dielectric conductivity
END_ELEMENT
PCSUB4 PCSUB4 11
1 H[1] 25.0mils 5 Thickness of dielectric layer #1
2 H[2] 25.0mils 5 Thickness of dielectric layer #2
3 H[3] 25.0mils 5 Thickness of dielectric layer #3
4 H[4] 25.0mils 5 Thickness of dielectric layer #4
5 Er 10.0 -1 Dielectric constant
6 Cond 1.0E+306 -1 Conductor conductivity
7 Hu 100.0mils 5 Upper ground plane spacing
8 Hl 100.0mils 5 Lower ground plane spacing
9 T 1.0mils 5 Metal thickness
10 W 500.0mils 5 Distance between sidewalls
11 Sigma 0 -1 Dielectric conductivity
END_ELEMENT
PCSUB5 PCSUB5 12
1 H[1] 25.0mils 5 Thickness of dielectric layer #1
2 H[2] 25.0mils 5 Thickness of dielectric layer #2
3 H[3] 25.0mils 5 Thickness of dielectric layer #3
4 H[4] 25.0mils 5 Thickness of dielectric layer #4
5 H[5] 25.0mils 5 Thickness of dielectric layer #5
6 Er 10.0 -1 Dielectric constant
7 Cond 1.0E+306 -1 Conductor conductivity
8 Hu 100.0mils 5 Upper ground plane spacing
9 Hl 100.0mils 5 Lower ground plane spacing
10 T 1.0mils 5 Metal thickness
11 W 500.0mils 5 Distance between sidewalls
12 Sigma 0 -1 Dielectric conductivity
END_ELEMENT
PCSUB6 PCSUB6 13
1 H[1] 25.0mils 5 Thickness of dielectric layer #1
2 H[2] 25.0mils 5 Thickness of dielectric layer #2
3 H[3] 25.0mils 5 Thickness of dielectric layer #3
4 H[4] 25.0mils 5 Thickness of dielectric layer #4
5 H[5] 25.0mils 5 Thickness of dielectric layer #5
6 H[6] 25.0mils 5 Thickness of dielectric layer #6
7 Er 10.0 -1 Dielectric constant
8 Cond 1.0E+306 -1 Conductor conductivity
9 Hu 100.0mils 5 Upper ground plane spacing
10 Hl 100.0mils 5 Lower ground plane spacing
11 T 1.0mils 5 Metal thickness
12 W 500.0mils 5 Distance between sidewalls
13 Sigma 0 -1 Dielectric conductivity
END_ELEMENT
PCSUB7 PCSUB7 14
1 H[1] 25.0mils 5 Thickness of dielectric layer #1
2 H[2] 25.0mils 5 Thickness of dielectric layer #2
3 H[3] 25.0mils 5 Thickness of dielectric layer #3
4 H[4] 25.0mils 5 Thickness of dielectric layer #4
5 H[5] 25.0mils 5 Thickness of dielectric layer #5
6 H[6] 25.0mils 5 Thickness of dielectric layer #6
7 H[7] 25.0mils 5 Thickness of dielectric layer #7
8 Er 10.0 -1 Dielectric constant
9 Cond 1.0E+306 -1 Conductor conductivity
10 Hu 100.0mils 5 Upper ground plane spacing
11 Hl 100.0mils 5 Lower ground plane spacing
12 T 1.0mils 5 Metal thickness
13 W 500.0mils 5 Distance between sidewalls
14 Sigma 0 -1 Dielectric conductivity
END_ELEMENT
PCTAPER PCTAPER 6
1 Subst PCSub1 -1 Substrate instance name
2 W1 25.0mils 5 Conductor width at pin 1
3 W2 15.0mils 5 Conductor width at pin 2
4 L 100.0mils 5 Length of the line
5 CLayer 1 -1 Conductor layer number
6 Temp '' 12 Physical temperature
END_ELEMENT
PCTEE PCTEE 6
1 Subst PCSub1 -1 Substrate instance name
2 W1 10.0mils 5 Width at pin 1
3 W2 10.0mils 5 Width at pin 2
4 W3 10.0mils 5 Width at pin 3
5 CLayer 1 -1 Conductor layer number
6 Temp '' 12 Physical temperature
END_ELEMENT
PCTRACE PCTRACE 5
1 Subst PCSub1 -1 Substrate instance name
2 W 10.0mils 5 Width of the line
3 CLayer 1 -1 Conductor layer number
4 L 25.0mils 5 Length of the line
5 Temp '' 12 Physical temperature
END_ELEMENT
PI4DQPSK_ModTuned PI4DQPSK_ModTuned 4
1 Fnom 1GHz 0 Nominal Input Frequency
2 Rout 50ohm 1 Output Resistance
3 SymbolRate 24.3KHz 0 Output Symbol Rate (1/2 Input Bit Rate)
4 Delay 50nsec 6 Sampling Delay
END_ELEMENT
PIN PIN 6
1 Cj 0.1nF 4 Junction Capacitance
2 Rj 0.01ohm 1 Junction resistance
3 Rs 0.01ohm 1 Diode series resistance
4 Ls 1.0nH 3 Bond wire inductance
5 Cb 0.1nF 4 By-pass Capacitance
6 Cg 0.1nF 4 Capacitance of gap which diode is connected
END_ELEMENT
PIN2 PIN2 5
1 Cj 0.1nF 4 Junction Capacitance
2 Rj 0.01ohm 1 Junction resistance
3 Rs 0.01ohm 1 Diode series resistance
4 Ls 1.0nH 3 Diode series inductance
5 Cp 0.1nF 4 Package Capacitance
END_ELEMENT
PLC PLC 2
1 L 1.0nH 3 Inductance
2 C 1.0pF 4 Capacitance
END_ELEMENT
PLCQ PLCQ 9
1 L 120.0nH 3 Inductance
2 Ql 50.0 -1 Quality factor of L
3 Fl 100.0MHz 0 Frequency at which ql is given
4 ModL loss_freq -1 Loss Mode for inductor of ql
5 C 21.0pF 4 Capacitance
6 Qc 100.0 -1 Quality factor of C
7 Fc 100.0MHz 0 Frequency at which qc is given
8 ModC loss_freq -1 Loss Mode for capacitor of qc
9 Rdc 0.0ohm 1 Resistance for modes 2 and 3
END_ELEMENT
PM_DemodTuned PM_DemodTuned 3
1 Sensitivity 10deg 7 Demodulation Sensitivity, in Degree/Volt
2 Fnom 1GHz 0 Nominal Input Frequency
3 Rout 50ohm 1 Output Resistance
END_ELEMENT
PM_ModTuned PM_ModTuned 3
1 Sensitivity 10deg 7 Modulation Sensitivity, Degree/Volt
2 Fnom 1GHz 0 Nominal Input Frequency
3 Rout 50ohm 1 Output Resistance
END_ELEMENT
PM_UnwrapDemodTuned PM_UnwrapDemodTuned 3
1 Sensitivity 10deg 7 Demodulation Sensitivity, in Degree/Volt
2 Fnom 1GHz 0 Nominal Input Frequency
3 MaxAngle 360deg 7 Unwrapped Phase Angle Range (+/- MaxAngle)
END_ELEMENT
PRC PRC 2
1 R 1.0Mohm 1 Parallel resistance
2 C 1.0pF 4 Capacitance
END_ELEMENT
PRL PRL 2
1 R 1.0Mohm 1 Parallel resistance
2 L 1.0nH 3 Inductance
END_ELEMENT
PRLC PRLC 3
1 R 1.0Mohm 1 Parallel resistance
2 L 1.0nH 3 Inductance
3 C 1.0pF 4 Capacitance
END_ELEMENT
P_1Tone P_1Tone 11
1 Num 1 -1 Port number
2 Z 50ohm 1 Source impedance, use 1+j*0 for complex
3 P (dbmtow(0)) 8 Power at center frequency, use polar() for phase
4 Freq 1GHz 0 Center frequency
5 P_USB '' 8 Power of upper sideband small signal tone, use polar() for phase
6 P_LSB '' 8 Power of lower sideband small-signal tone, use polar() for phase
7 Mod '' -1 Modulation function
8 Noise y_n1 -1 Enable/disable port thermal noise
9 Pac (dbmtow(0)) 8 AC power, use polar() for phase
10 FundIndex '' -1 Fundamental Frequency Index (Can Be Used Instead of Specifying Freq")
11 Vdc '' 9 Open circuit DC voltage
END_ELEMENT
P_AC P_AC 6
1 Num 1 -1 Port number
2 Z 50ohm 1 Reference impedance, use 1+j*0 for complex
3 Pac (dbmtow(0)) 8 AC power, use polar() for phase
4 Freq freq 0 Frequency
5 Noise y_n1 -1 Enable/disable port thermal noise
6 Vdc '' 9 Open circuit DC voltage
END_ELEMENT
P_SpectrumDataset P_SpectrumDataset 5
1 Num 1 -1 Port number
2 Z 50ohm 1 Source impedance, use 1+j*0 for complex
3 Freq 1GHz 0 Fundamental frequency
4 Dataset '' -1 Dataset name
5 Expression '' -1 Dataset variable or expression
END_ELEMENT
P_nHarm P_nHarm 8
1 Num 1 -1 Port number
2 Z 50ohm 1 Source impedance, use 1+j*0 for complex
3 Freq 1GHz 0 Fundamental frequency
4 P 0W 8 N-th harmonic power level (use Add for more harmonics), , use polar() for phase
5 Noise y_n1 -1 Enable/disable port thermal noise
6 Pac (dbmtow(0)) 8 AC power, use polar() for phase
7 FundIndex '' -1 Fundamental Frequency Index (Can Be Used Instead of Specifying Freq")
8 Vdc '' 9 Open circuit DC voltage
END_ELEMENT
P_nTone P_nTone 7
1 Num 1 -1 Port number
2 Z 50ohm 1 Source impedance, use 1+j*0 for complex
3 Freq 1GHz 0 N-th frequency tone (use Add for more tones)
4 P (dbmtow(0)) 8 Corresponding N-th tone power level, (use Add for more power levels), use polar() for phase
5 Noise y_n1 -1 Enable/disable port thermal noise
6 Pac (dbmtow(0)) 8 AC power, use polar() for phase
7 Vdc '' 9 Open circuit DC voltage
END_ELEMENT
Pad Pad 4
1 NetType Pi -1 Pi or Tee Network
2 Loss 0.dB 13 attenuation in dB
3 R1 50.ohm 1 reference resistance for port1
4 R2 50.ohm 1 reference resistance for port2
END_ELEMENT
ParallelSerial ParallelSerial 5
1 OutputRate 50KHz 0 Serial Output Data Clock Rate
2 LSB_First y_n1 -1 Serial Data Is Output with Least Significant Bit First
3 Delay 0.0nsec 6 Initial Synchronization Delay
4 InputBits 4 -1 Number of Bits in Input Word
5 IntegerIn y_n1 -1 Yes if input data is scaled as integers instead of from -1 to 1
END_ELEMENT
ParamSweep ParamSweep 17
1 UseSweepPlan '' -1 Flag to indicate use of SweepPlan
2 SweepPlan '' -1 SWEEP plan instance/path name to append to sweep
3 SweepVar '' -1 Name of variable or parameter to be swept
4 SimInstanceName list(,,,,,) -1 Analysis instance/path name to control (repeatable)
5 StatusLevel 2 -1 Degree of annotation
6 RestoreNomValues '' -1 Restores nominal values if controlling optimization
7 Start 1 -1 Start value
8 Stop 10 -1 Stop value
9 Step 1 -1 Step value
10 Center '' -1 Center value
11 Span '' -1 Span
12 Lin '' -1 Linear sweep
13 Dec '' -1 Number of points per decade
14 Log '' -1 Log sweep
15 Reverse '' -1 Reverse sweep
16 Pt '' 0 Frequency value if its not being swept
17 Sort 'LINEAR START STEP' -1 Single point
END_ELEMENT
Pfc Pfc 1
1 Function list(our_pfc=pfc(vout,0,I_Probe1.i,{1,0})) -1 pfc(positive_voltage,negative_voltage,current_probe,desired_harm_freq)
END_ELEMENT
PfcTran PfcTran 1
1 Function 'list(our_pfct=pfc_tran(vout, 0,I_Probe1.i,1GHz,1))' -1 pfc_tran(positive_voltage,negative_voltage,current_probe,fund_freq,num_of_harm)
END_ELEMENT
PhaseComp PhaseComp 1
1 Function list(our_pcomp=phase_comp(S21[::,0])) -1 phase_comp(complex_transmission_coeff)
END_ELEMENT
PhaseFreqDet PhaseFreqDet 2
1 Vhigh 5V 9 High-state Output Voltage
2 Vlow 0V 9 Low-state Output Voltage
END_ELEMENT
PhaseFreqDetTuned PhaseFreqDetTuned 4
1 Sensitivity 0.1 -1 Detector Sensitivity, (mA/degree)
2 MaxAngle 360deg 7 Maximum Unwrapped Phase Angle (+/- MaxAngle)
3 Vlimit 20V 9 Maximum Output Voltage Compliance (+/- Vlimit)
4 Fnom 100KHz 0 Nominal input frequency for VCO and REF inputs
END_ELEMENT
PhaseNoiseMod PhaseNoiseMod 5
1 Fnom 1GHz 0 Nominal Input Frequency
2 Rout 50ohm 1 Output Resistance)
3 Fcorner 1MHz 0 Corner Frequency for 1/f Noise Performance
4 NF 3dB 13 Broad Band Noise Figure
5 QL 500 -1 Loaded Q of Resonator
END_ELEMENT
PhaseShiftSML PhaseShiftSML 5
1 Phase 90.deg 7 phase shift
2 PhaseSlope 0. -1 per frequency octave
3 FreqStart '' 0 frequency where slope begins
4 RTConj y_n0 -1 reverse transmission conjugate, Yes to apply
5 ZRef 50.ohm 1 reference impedance for all ports
END_ELEMENT
PinDiode PinDiode 5
1 Model NLPINM1 -1 Model instance name
2 Area '' -1 Junction Area
3 Region '' -1 DC operating region, 0=off, 1=on
4 Temp '' 12 Device operating temperature
5 Mode simtype_nonlin -1 Simulation Mode for This Device
END_ELEMENT
PinDiodeModel PinDiodeModel 18
1 Is '' 10 Saturation Current, A
2 Vi '' 9 I-Region Forward Bias Voltage Drop, V
3 Un '' -1 Electron Mobility, cm^2/(V*s)
4 Wi '' -1 I-Region Width, m
5 Rr '' 1 I-Region Reverse Bias Resistance, Ohm
6 Cmin '' 4 P-I-N Punchthrough Capacitance, F
7 Tau '' 6 Ambipolar Lifetime within I-Region, s
8 Rs '' 1 Ohmic Resistance, Ohm
9 Cjo '' 4 Zero-Bias Junction Capacitance, F
10 Vj '' 9 Junction Potential, V
11 M '' -1 Grading coefficient
12 Fc '' -1 Forward-bias Depletion Cap. Coefficient
13 Imax '' -1 Explosion current, A/m^2
14 Kf '' -1 Flicker Noise Coefficient
15 Af '' -1 Flicker Noise Exponent
16 Ffe '' -1 Flicker noise frequency exponent
17 wBv '' 9 Diode Reverse Breakdown Voltage (warning), V
18 wPmax '' 8 Maximum Power Dissipation (warning), W
END_ELEMENT
Pspec Pspec 1
1 Function list(our_pspec=pspec(vout,0,I_Probe1.i)) -1 pspec(positive_voltage,negative_voltage,current_probe)
END_ELEMENT
PspecTran PspecTran 1
1 Function 'list(our_pspect=psepc_tran(vout, 0,I_Probe1.i,1GHz,8))' -1 pspec_tran(positive_voltage,negative_voltage,current_probe,fund_freq,num_of_harm)
END_ELEMENT
Pt Pt 1
1 Function list(our_pt=pt(vout,0,I_Probe1.i)) -1 pt(positive_voltage,negative_voltage,current_probe)
END_ELEMENT
PtRF_CDMA PtRF_CDMA 5
1 F0 894MHz 0 Carrier Frequency
2 Power (dbmtow(0)) 8 Output Power at RF Output
3 Z 50ohm 1 Output Impedance of RF Output, use 1+j*0 for complex
4 LinMod 1.0 -1 Additional Linear Modulation
5 Toffset 0sec 6 Time Offset into Data Array
END_ELEMENT
PtRF_GSM PtRF_GSM 5
1 F0 1GHz 0 Carrier Frequency
2 Power (dbmtow(0)) 8 Output Power at RF Output
3 Rout 50ohm 1 Output Resistance of RF Output
4 DataRate 270.833KHz 0 Digital Modulation Data Rate
5 InitBits 001101010010 -1 Initial State of PRBS Data Generator
END_ELEMENT
PtRF_NADC PtRF_NADC 5
1 F0 870.03MHz 0 Carrier Frequency
2 Power (dbmtow(0)) 8 RF Output Power
3 Z 50ohm 1 Output Impedance of RF Output, use 1+j*0 for complex
4 LinMod 1.0 -1 Additional Linear Modulation
5 Toffset 0sec 6 Time Offset into Data Array
END_ELEMENT
PtRF_PHS PtRF_PHS 5
1 F0 1895MHz 0 Carrier Frequency
2 Power (dbmtow(0)) 8 Output Power at RF Output
3 Z 50ohm 1 Output Impedance of RF Output, use 1+j*0 for complex
4 LinMod 1.0 -1 Additional Linear Modulation
5 Toffset 0sec 6 Time Offset into Data Array
END_ELEMENT
PtRF_Pulse PtRF_Pulse 15
1 Num 1 -1 Port number
2 Z 50ohm 1 Source impedance, use 1+j*0 for complex
3 P (dbmtow(0)) 8 Carrier power during pulse
4 Freq 1GHz 0 RF carrier frequency
5 OffRatio 0 -1 Linear amplitude ratio of OFF to ON portions of pulse
6 Delay 0nsec 6 Time delay before first pulse
7 Rise 1nsec 6 Rise time of pulse
8 Fall 1nsec 6 Fall time of pulse
9 Width 3nsec 6 Width of constant portion of pulse
10 Period 100nsec 6 Pulse repetition period
11 Chirp 0Hz 0 Linear frequency modulation during pulse
12 Phase0 0deg 7 Initial phase of pulse carrier
13 Noise y_n1 -1 Enable/disable port thermal noise
14 Pac (dbmtow(0)) 8 AC power, use 1+j*0 for complex
15 Vdc '' 9 Open circuit DC voltage
END_ELEMENT
PtRF_Step PtRF_Step 9
1 Num 1 -1 Port number
2 Z 50ohm 1 Source impedance, use 1+j*0 for complex
3 P (dbmtow(0)) 8 Steady state power
4 Freq 1GHz 0 RF Frequency
5 Delay 0nsec 6 Time delay before step
6 Rise 0nsec 6 Rise time of step
7 Noise y_n1 -1 Enable/disable port thermal noise
8 Pac (dbmtow(0)) 8 AC power, use polar() for phase
9 Vdc '' 9 Open circuit DC voltage
END_ELEMENT
PwrGain PwrGain 1
1 Function list(our_pgain=pwr_gain(S21)) -1 pwr_gain(complex_transmission_coeff)
END_ELEMENT
PwrSplit2 PwrSplit2 8
1 S21 1. -1 Transmission Coefficient, Port1 to Port2, Complex Number: 1+j*0, polar(), dbpolar()
2 S31 1. -1 Transmission Coefficient, Port1 to Port3, Complex Number: 1+j*0, polar(), dbpolar()
3 S11 0. -1 Port1 Reflection Coefficient, Complex Number: 1+j*0, polar(), dbpolar()
4 S22 0. -1 Port2 Reflection Coefficient, Complex Number: 1+j*0, polar(), dbpolar()
5 Isolation 100.dB 13 Isolation Between Port2 and Port3 in dB
6 ZRef 50.ohm 1 Reference Impedance for All Ports
7 Temp '' 12 Temperature in Degrees Celsius
8 Delay '' 6 Time Delay
END_ELEMENT
PwrSplit3 PwrSplit3 6
1 S21 1. -1 Transmission Coefficient, Port1 to Port2, Complex Number: 1+j*0, polar(), dbpolar()
2 S31 1. -1 Transmission Coefficient, Port1 to Port3, Complex Number: 1+j*0, polar(), dbpolar()
3 S41 1. -1 Transmission Coefficient, Port1 to Port4, Complex Number: 1+j*0, polar(), dbpolar()
4 ZRef 50.ohm 1 Reference Impedance for All Ports
5 Temp '' 12 Temperature in Degrees Celsius
6 Delay '' 6 Time Delay
END_ELEMENT
QPSK_ModTuned QPSK_ModTuned 6
1 Fnom 1GHz 0 Nominal Input Frequency
2 Rout 50ohm 1 Output Resistance
3 State1 exp(-j*3*pi/4) -2 Complex Modulation Coordinates of State 1
4 State2 exp(-j*5*pi/4) -2 Complex Modulation Coordinates of State 2
5 State3 exp(-j*pi) -2 Complex Modulation Coordinates of State 3
6 State4 exp(-j*7*pi/4) -2 Complex Modulation Coordinates of State 4
END_ELEMENT
QuantizerSML QuantizerSML 4
1 Vmin -1.0V 9 Minimum Baseband Input Voltage
2 Vmax 1.0V 9 Maximum Baseband Input Voltage
3 N 32 -1 Number of Quantized Output Levels
4 OutState 1 -1 =1 for outputing integers representing quantization levels, =0 for outputing quantized input
END_ELEMENT
R R 8
1 R 50ohm 1 Resistance
2 Temp '' 12 Temperature
3 Tnom '' 12 Nominal temperature
4 TC1 '' 12 Temperature coefficient; per degree Celsius
5 TC2 '' 12 Temperature coefficient; per degree Celsius squared
6 Noise Yes -1 Resistor thermal noise option: YES=enable; NO=disable
7 wPmax '' 8 Maximum power dissipation (warning)
8 wImax '' 10 Maximum current (warning)
END_ELEMENT
RCLIN RCLIN 4
1 R 50.0ohm 1 Series Resistance per meter
2 C 0.01pF 4 Shunt Capacitance per meter
3 L 1000.0mils 5 Length
4 Temp '' 12 Physical temperature
END_ELEMENT
RIBBON RIBBON 9
1 W 25.0mils 5 Conductor width
2 L 100.0mils 5 Conductor length
3 Rho 1.0 -1 Metal resistivity (relative to gold)
4 Temp '' 12 Physical temperature
5 AF 0.5 -1 (for Layout option) Arc factor;ratio of distance between two pins to wire length
6 CO 5.0mils 5 (for Layout option) Conductor offset; distance from edge of conductor
7 A1 30.0deg 7 (for Layout option) Angle of departure from first pin
8 A2 30.0deg 7 (for Layout option) Angle between direction of first and second pins
9 BondLayer smt_bond -1 (for Layout option) Layer on which the ribbon is drawn
END_ELEMENT
RIND RIND 9
1 N 3.0 -1 Number of turns
2 L1 30.0mils 5 Length of Second Outermost Segment
3 L2 20.0mils 5 Length of Outermost Segment
4 W 1.0mils 5 Conductor Width
5 S 1.0mils 5 Conductor Spacing
6 T 0.2mils 5 Conductor Thickness
7 Rho 1.0 -1 Conductor Resistivity (Relative to copper)
8 FR 10.0MHz 0 Resonant frequency
9 Temp '' 12 Physical temperature
END_ELEMENT
RWG RWG 10
1 A 900.0mils 5 Inside Width of Enclosure
2 B 400.0mils 5 Inside Height of Enclosure
3 L 10000.0mils 5 Waveguide Length
4 Er 1.0 -1 Relative dielectric constant
5 Rho 1.0 -1 Metal Resistivity (Relative to Copper)
6 TanD 0 -1 Dielectric loss tangent
7 Mur 1 -1 Relative permeability
8 TanM 0 -1 Permeability
9 Sigma 0 -1 Dielectric conductivity
10 Temp '' 12 Physical temperature
END_ELEMENT
RWGINDF RWGINDF 10
1 A 900.0mils 5 Inside Width of Enclosure
2 B 400.0mils 5 Inside Height of Enclosure
3 L 10000.0mils 5 Length of the Fin
4 Er 1.0 -1 Relative dielectric constant
5 Rho 1.0 -1 Metal Resistivity (Relative to Copper)
6 TanD 0 -1 Dielectric loss tangent
7 Mur 1 -1 Relative permeability
8 TanM 0 -1 Permeability
9 Sigma 0 -1 Dielectric conductivity
10 Temp '' 12 Physical temperature
END_ELEMENT
RWGT RWGT 9
1 A 900.0mils 5 Inside Width of Enclosure
2 B 400.0mils 5 Inside Height of Enclosure
3 Er 1.0 -1 Relative dielectric constant
4 Rho 1.0 -1 Metal Resistivity (Relative to Copper)
5 TanD 0 -1 Dielectric loss tangent
6 Mur 1 -1 Relative permeability
7 TanM 0 -1 Permeability
8 Sigma 0 -1 Dielectric conductivity
9 Temp '' 12 Physical temperature
END_ELEMENT
R_Conn R_Conn 1
1 R 50ohm 1 Resistance
END_ELEMENT
R_Model R_Model 11
1 R 50ohm 1 Resistance
2 Rsh '' 1 Sheet Resistance
3 Length '' 5 Length
4 Width '' 5 Width
5 Narrow '' 5 Length and width narrowing due to etching
6 Tnom '' 12 Nominal temperature
7 TC1 '' 12 Temperature coefficient; per degree Celsius
8 TC2 '' 12 Temperature coefficient; per degree Celsius squared
9 wPmax '' 8 Maximum power dissipation (warning)
10 wImax '' 10 Maximum current (warning)
11 AllParams '' -1 Data Access Component (DAC) Based Parameters
END_ELEMENT
R_Pad1 R_Pad1 4
1 R 50ohm 1 Resistance
2 W 25.0mils 5 W
3 S 10.0mils 5 S
4 L1 50.0mils 5 L
END_ELEMENT
R_Space R_Space 2
1 R 50ohm 1 Resistance
2 L1 50.0mils 5 L
END_ELEMENT
ResetSwitch ResetSwitch 0
END_ELEMENT
S1P S1P 5
1 File '' -1 File Name
2 Type Type1 -1 File Type
3 InterpMode Mode0 -1 Interpolation Mode
4 InterpDom ID0 -1 Interpolation Domain
5 Temp '' 12 Temperature
END_ELEMENT
S1P_Eqn S1P_Eqn 14
1 S[1,1] '' -1 S-parameter
2 Z[1] '' 1 Port 1 impedance
3 NFmin '' 13 Minimum noise figure in dB
4 Rn '' 1 Noise resistance
5 Sopt '' -1 Optimum noise match S-Parameter
6 Temp '' 12 Device noise temperature
7 ImpNoncausalLength '' -1 Non-causal function impulse response order
8 ImpMode '' -1 Convolution mode
9 ImpMaxFreq '' 0 Maximum Frequency to which device is evaluated
10 ImpDeltaFreq '' 0 Sample spacing in frequency
11 ImpMaxOrder '' -1 Maximum allowed impulse response order
12 ImpWindow '' -1 Smoothing window
13 ImpRelTol '' -1 Relative impulse response truncation factor
14 ImpAbsTol '' -1 Absolute impulse response truncation factor
END_ELEMENT
S2P S2P 5
1 File '' -1 File Name
2 Type Type1 -1 File Type
3 InterpMode Mode0 -1 Interpolation Mode
4 InterpDom ID0 -1 Interpolation Domain
5 Temp '' 12 Temperature
END_ELEMENT
S2P_Eqn S2P_Eqn 19
1 S[1,1] '' -1 S-parameter
2 S[1,2] '' -1 S-parameter
3 S[2,1] '' -1 S-parameter
4 S[2,2] '' -1 S-parameter
5 Z[1] '' 1 Port 1 impedance
6 Z[2] '' 1 Port 2 impedance
7 Recip No -1 Port is reciprocal
8 NFmin '' 13 Minimum noise figure in dB
9 Rn '' 1 Noise resistance
10 Sopt '' -1 Optimum noise match S-Parameter
11 Temp '' 12 Device noise temperature
12 ImpNoncausalLength '' -1 Non-causal function impulse response order
13 ImpMode '' -1 Convolution mode
14 ImpMaxFreq '' 0 Maximum Frequency to which device is evaluated
15 ImpDeltaFreq '' 0 Sample spacing in frequency
16 ImpMaxOrder '' -1 Maximum allowed impulse response order
17 ImpWindow '' -1 Smoothing window
18 ImpRelTol '' -1 Relative impulse response truncation factor
19 ImpAbsTol '' -1 Absolute impulse response truncation factor
END_ELEMENT
S3P S3P 5
1 File '' -1 File Name
2 Type Type1 -1 File Type
3 InterpMode Mode0 -1 Interpolation Mode
4 InterpDom ID0 -1 Interpolation Domain
5 Temp '' 12 Temperature
END_ELEMENT
S3P_Eqn S3P_Eqn 25
1 S[1,1] '' -1 S-parameter
2 S[1,2] '' -1 S-parameter
3 S[1,3] '' -1 S-parameter
4 S[2,1] '' -1 S-parameter
5 S[2,2] '' -1 S-parameter
6 S[2,3] '' -1 S-parameter
7 S[3,1] '' -1 S-parameter
8 S[3,2] '' -1 S-parameter
9 S[3,3] '' -1 S-parameter
10 Z[1] '' 1 Port 1 impedance
11 Z[2] '' 1 Port 2 impedance
12 Z[3] '' 1 Port 3 impedance
13 Recip No -1 Port is reciprocal
14 NFmin '' 13 Minimum noise figure in dB
15 Rn '' 1 Noise resistance
16 Sopt '' -1 Optimum noise match S-Parameter
17 Temp '' 12 Device noise temperature
18 ImpNoncausalLength '' -1 Non-causal function impulse response order
19 ImpMode '' -1 Convolution mode
20 ImpMaxFreq '' 0 Maximum Frequency to which device is evaluated
21 ImpDeltaFreq '' 0 Sample spacing in frequency
22 ImpMaxOrder '' -1 Maximum allowed impulse response order
23 ImpWindow '' -1 Smoothing window
24 ImpRelTol '' -1 Relative impulse response truncation factor
25 ImpAbsTol '' -1 Absolute impulse response truncation factor
END_ELEMENT
S4P S4P 5
1 File '' -1 File Name
2 Type Type1 -1 File Type
3 InterpMode Mode0 -1 Interpolation Mode
4 InterpDom ID0 -1 Interpolation Domain
5 Temp '' 12 Temperature
END_ELEMENT
S4P_Eqn S4P_Eqn 33
1 S[1,1] '' -1 S-parameter
2 S[1,2] '' -1 S-parameter
3 S[1,3] '' -1 S-parameter
4 S[1,4] '' -1 S-parameter
5 S[2,1] '' -1 S-parameter
6 S[2,2] '' -1 S-parameter
7 S[2,3] '' -1 S-parameter
8 S[2,4] '' -1 S-parameter
9 S[3,1] '' -1 S-parameter
10 S[3,2] '' -1 S-parameter
11 S[3,3] '' -1 S-parameter
12 S[3,4] '' -1 S-parameter
13 S[4,1] '' -1 S-parameter
14 S[4,2] '' -1 S-parameter
15 S[4,3] '' -1 S-parameter
16 S[4,4] '' -1 S-parameter
17 Z[1] '' 1 Port 1 impedance
18 Z[2] '' 1 Port 2 impedance
19 Z[3] '' 1 Port 3 impedance
20 Z[4] '' 1 Port 4 impedance
21 Recip No -1 Port is reciprocal
22 NFmin '' 13 Minimum noise figure in dB
23 Rn '' 1 Noise resistance
24 Sopt '' -1 Optimum noise match S-Parameter
25 Temp '' 12 Device noise temperature
26 ImpNoncausalLength '' -1 Non-causal function impulse response order
27 ImpMode '' -1 Convolution mode
28 ImpMaxFreq '' 0 Maximum Frequency to which device is evaluated
29 ImpDeltaFreq '' 0 Sample spacing in frequency
30 ImpMaxOrder '' -1 Maximum allowed impulse response order
31 ImpWindow '' -1 Smoothing window
32 ImpRelTol '' -1 Relative impulse response truncation factor
33 ImpAbsTol '' -1 Absolute impulse response truncation factor
END_ELEMENT
S5P S5P 5
1 File '' -1 File Name
2 Type Type1 -1 File Type
3 InterpMode Mode0 -1 Interpolation Mode
4 InterpDom ID0 -1 Interpolation Domain
5 Temp '' 12 Temperature
END_ELEMENT
S5P_Eqn S5P_Eqn 43
1 S[1,1] '' -1 S-parameter
2 S[1,2] '' -1 S-parameter
3 S[1,3] '' -1 S-parameter
4 S[1,4] '' -1 S-parameter
5 S[1,5] '' -1 S-parameter
6 S[2,1] '' -1 S-parameter
7 S[2,2] '' -1 S-parameter
8 S[2,3] '' -1 S-parameter
9 S[2,4] '' -1 S-parameter
10 S[2,5] '' -1 S-parameter
11 S[3,1] '' -1 S-parameter
12 S[3,2] '' -1 S-parameter
13 S[3,3] '' -1 S-parameter
14 S[3,4] '' -1 S-parameter
15 S[3,5] '' -1 S-parameter
16 S[4,1] '' -1 S-parameter
17 S[4,2] '' -1 S-parameter
18 S[4,3] '' -1 S-parameter
19 S[4,4] '' -1 S-parameter
20 S[4,5] '' -1 S-parameter
21 S[5,1] '' -1 S-parameter
22 S[5,2] '' -1 S-parameter
23 S[5,3] '' -1 S-parameter
24 S[5,4] '' -1 S-parameter
25 S[5,5] '' -1 S-parameter
26 Z[1] '' 1 Port 1 impedance
27 Z[2] '' 1 Port 2 impedance
28 Z[3] '' 1 Port 3 impedance
29 Z[4] '' 1 Port 4 impedance
30 Z[5] '' 1 Port 5 impedance
31 Recip No -1 Port is reciprocal
32 NFmin '' 13 Minimum noise figure in dB
33 Rn '' 1 Noise resistance
34 Sopt '' -1 Optimum noise match S-Parameter
35 Temp '' 12 Device noise temperature
36 ImpNoncausalLength '' -1 Non-causal function impulse response order
37 ImpMode '' -1 Convolution mode
38 ImpMaxFreq '' 0 Maximum Frequency to which device is evaluated
39 ImpDeltaFreq '' 0 Sample spacing in frequency
40 ImpMaxOrder '' -1 Maximum allowed impulse response order
41 ImpWindow '' -1 Smoothing window
42 ImpRelTol '' -1 Relative impulse response truncation factor
43 ImpAbsTol '' -1 Absolute impulse response truncation factor
END_ELEMENT
S6P S6P 5
1 File '' -1 File Name
2 Type Type1 -1 File Type
3 InterpMode Mode0 -1 Interpolation Mode
4 InterpDom ID0 -1 Interpolation Domain
5 Temp '' 12 Temperature
END_ELEMENT
S6P_Eqn S6P_Eqn 55
1 S[1,1] '' -1 S-parameter
2 S[1,2] '' -1 S-parameter
3 S[1,3] '' -1 S-parameter
4 S[1,4] '' -1 S-parameter
5 S[1,5] '' -1 S-parameter
6 S[1,6] '' -1 S-parameter
7 S[2,1] '' -1 S-parameter
8 S[2,2] '' -1 S-parameter
9 S[2,3] '' -1 S-parameter
10 S[2,4] '' -1 S-parameter
11 S[2,5] '' -1 S-parameter
12 S[2,6] '' -1 S-parameter
13 S[3,1] '' -1 S-parameter
14 S[3,2] '' -1 S-parameter
15 S[3,3] '' -1 S-parameter
16 S[3,4] '' -1 S-parameter
17 S[3,5] '' -1 S-parameter
18 S[3,6] '' -1 S-parameter
19 S[4,1] '' -1 S-parameter
20 S[4,2] '' -1 S-parameter
21 S[4,3] '' -1 S-parameter
22 S[4,4] '' -1 S-parameter
23 S[4,5] '' -1 S-parameter
24 S[4,6] '' -1 S-parameter
25 S[5,1] '' -1 S-parameter
26 S[5,2] '' -1 S-parameter
27 S[5,3] '' -1 S-parameter
28 S[5,4] '' -1 S-parameter
29 S[5,5] '' -1 S-parameter
30 S[5,6] '' -1 S-parameter
31 S[6,1] '' -1 S-parameter
32 S[6,2] '' -1 S-parameter
33 S[6,3] '' -1 S-parameter
34 S[6,4] '' -1 S-parameter
35 S[6,5] '' -1 S-parameter
36 S[6,6] '' -1 S-parameter
37 Z[1] '' 1 Port 1 impedance
38 Z[2] '' 1 Port 2 impedance
39 Z[3] '' 1 Port 3 impedance
40 Z[4] '' 1 Port 4 impedance
41 Z[5] '' 1 Port 5 impedance
42 Z[6] '' 1 Port 6 impedance
43 Recip No -1 Port is reciprocal
44 NFmin '' 13 Minimum noise figure in dB
45 Rn '' 1 Noise resistance
46 Sopt '' -1 Optimum noise match S-Parameter
47 Temp '' 12 Device noise temperature
48 ImpNoncausalLength '' -1 Non-causal function impulse response order
49 ImpMode '' -1 Convolution mode
50 ImpMaxFreq '' 0 Maximum Frequency to which device is evaluated
51 ImpDeltaFreq '' 0 Sample spacing in frequency
52 ImpMaxOrder '' -1 Maximum allowed impulse response order
53 ImpWindow '' -1 Smoothing window
54 ImpRelTol '' -1 Relative impulse response truncation factor
55 ImpAbsTol '' -1 Absolute impulse response truncation factor
END_ELEMENT
S7P S7P 5
1 File '' -1 File Name
2 Type Type1 -1 File Type
3 InterpMode Mode0 -1 Interpolation Mode
4 InterpDom ID0 -1 Interpolation Domain
5 Temp '' 12 Temperature
END_ELEMENT
S8P S8P 5
1 File '' -1 File Name
2 Type Type1 -1 File Type
3 InterpMode Mode0 -1 Interpolation Mode
4 InterpDom ID0 -1 Interpolation Domain
5 Temp '' 12 Temperature
END_ELEMENT
S9P S9P 5
1 File '' -1 File Name
2 Type Type1 -1 File Type
3 InterpMode Mode0 -1 Interpolation Mode
4 InterpDom ID0 -1 Interpolation Domain
5 Temp '' 12 Temperature
END_ELEMENT
SAGELIN SAGELIN 2
1 L 18.5mils 5 Physical length of transmission line
2 BW_Code bwcode0 -1 Code for bandwidth selection
END_ELEMENT
SAGEPAC SAGEPAC 2
1 L 18.5mils 5 Physical length of transmission line
2 BW_Code bwcode0 -1 Code for bandwidth selection
END_ELEMENT
SBCLIN SBCLIN 10
1 Subst SSub1 -1 Substrate instance name
2 W 25.0mils 5 Line Width
3 S 10.0mils 5 Spacing Between Lines
4 L 100.0mils 5 Line Length
5 Temp '' 12 Physical temperature
6 W1 5.0mils 5 (for Layout option) Width of line that connects to pin 1
7 W2 5.0mils 5 (for Layout option) Width of line that connects to pin 2
8 W3 5.0mils 5 (for Layout option) Width of line that connects to pin 3
9 W4 5.0mils 5 (for Layout option) Width of line that connects to pin 4
10 P1Layer smt_cond1 -1 (for Layout option ) layer associated with pin 1 conductor
END_ELEMENT
SBEND SBEND 5
1 Subst SSub1 -1 Substrate instance name
2 W 25.0mils 5 Conductor Width
3 Angle 90deg 7 Angle of Bend
4 Temp '' 12 Physical temperature
5 Layer smt_cond1 -1 (for Layout option ) conductor layer number
6 AutomaticWidth 'Disabled' -1
END_ELEMENT
SBEND2 SBEND2 6
1 Subst SSub1 -1 Substrate instance name
2 W 25.0mils 5 Conductor Width
3 Angle 90deg 7 Angle of Bend
4 M 0.6 15 Miter Fraction
5 Temp '' 12 Physical temperature
6 Layer smt_cond1 -1 (for Layout option ) conductor layer number
6 AutomaticWidth 'Disabled' -1
END_ELEMENT
SCLIN SCLIN 10
1 Subst SSub1 -1 Substrate instance name
2 W 25.0mils 5 Line Width
3 S 10.0mils 5 Spacing Between Lines
4 L 100.0mils 5 Line Length
5 Temp '' 12 Physical temperature
6 W1 5.0mils 5 (for Layout option) Width of line that connects to pin 1
7 W2 5.0mils 5 (for Layout option) Width of line that connects to pin 2
8 W3 5.0mils 5 (for Layout option) Width of line that connects to pin 3
9 W4 5.0mils 5 (for Layout option) Width of line that connects to pin 4
10 Layer smt_cond1 -1 (for Layout option ) conductor layer number
END_ELEMENT
SCROS SCROS 7
1 Subst SSub1 -1 Substrate instance name
2 W1 25.0mils 5 Conductor Width at Pin 1
3 W2 50.0mils 5 Conductor Width at Pin 2
4 W3 25.0mils 5 Conductor Width at Pin 3
5 W4 50.0mils 5 Conductor Width at Pin 4
6 Temp '' 12 Physical temperature
7 Layer smt_cond1 -1 (for Layout option ) conductor layer number
8 AutomaticWidth 'Disabled' -1
END_ELEMENT
SCURVE SCURVE 6
1 Subst SSub1 -1 Substrate instance name
2 W 25.0mils 5 Conductor Width
3 Angle -90deg 7 Angle Subtended by the Bend
4 Radius 100.0mils 5 Radius (Measured to Strip Centerline)
5 Temp '' 12 Physical temperature
6 Layer smt_cond1 -1 (for Layout option ) conductor layer number
7 AutomaticWidth 'Disabled' -1
END_ELEMENT
SDD10P SDD10P 2
1 SDD list(prm("SddExplicit",1,0,(_v1)/50.0),prm("SddExplicit",2,0,(_v2)/50.0),prm("SddExplicit",3,0,(_v3)/50.0),prm("SddExplicit",4,0,(_v4)/50.0),prm("SddExplicit",5,0,(_v5)/50.0),prm("SddExplicit",6,0,(_v6)/50.0),prm("SddExplicit",7,0,(_v7)/50.0),prm("SddExplicit",8,0,(_v8)/50.0),prm("SddExplicit",9,0,(_v9)/50.0),prm("SddExplicit",10,0,(_v10)/50.0)) -2 SDD parameters
2 C '' -2 Controlling current name (repeatable)
END_ELEMENT
SDD1P SDD1P 2
1 SDD list(prm("SddExplicit",1,0,(_v1)/50.0)) -2 SDD parameters
2 C '' -2 Controlling current name (repeatable)
END_ELEMENT
SDD2P SDD2P 2
1 SDD list(prm("SddExplicit",1,0,(_v1)/50.0),prm("SddExplicit",2,0,(_v2)/50.0)) -2 SDD parameters
2 C '' -2 Controlling current name (repeatable)
END_ELEMENT
SDD3P SDD3P 2
1 SDD list(prm("SddExplicit",1,0,(_v1)/50.0),prm("SddExplicit",2,0,(_v2)/50.0),prm("SddExplicit",3,0,(_v3)/50.0)) -2 SDD parameters
2 C '' -2 Controlling current name (repeatable)
END_ELEMENT
SDD4P SDD4P 2
1 SDD list(prm("SddExplicit",1,0,(_v1)/50.0),prm("SddExplicit",2,0,(_v2)/50.0),prm("SddExplicit",3,0,(_v3)/50.0),prm("SddExplicit",4,0,(_v4)/50.0)) -2 SDD parameters
2 C '' -2 Controlling current name (repeatable)
END_ELEMENT
SDD5P SDD5P 2
1 SDD list(prm("SddExplicit",1,0,(_v1)/50.0),prm("SddExplicit",2,0,(_v2)/50.0),prm("SddExplicit",3,0,(_v3)/50.0),prm("SddExplicit",4,0,(_v4)/50.0),prm("SddExplicit",5,0,(_v5)/50.0)) -2 SDD parameters
2 C '' -2 Controlling current name (repeatable)
END_ELEMENT
SDD6P SDD6P 2
1 SDD list(prm("SddExplicit",1,0,(_v1)/50.0),prm("SddExplicit",2,0,(_v2)/50.0),prm("SddExplicit",3,0,(_v3)/50.0),prm("SddExplicit",4,0,(_v4)/50.0),prm("SddExplicit",5,0,(_v5)/50.0),prm("SddExplicit",6,0,(_v6)/50.0)) -2 SDD parameters
2 C '' -2 Controlling current name (repeatable)
END_ELEMENT
SDD7P SDD7P 2
1 SDD list(prm("SddExplicit",1,0,(_v1)/50.0),prm("SddExplicit",2,0,(_v2)/50.0),prm("SddExplicit",3,0,(_v3)/50.0),prm("SddExplicit",4,0,(_v4)/50.0),prm("SddExplicit",5,0,(_v5)/50.0),prm("SddExplicit",6,0,(_v6)/50.0),prm("SddExplicit",7,0,(_v7)/50.0)) -2 SDD parameters
2 C '' -2 Controlling current name (repeatable)
END_ELEMENT
SDD8P SDD8P 2
1 SDD list(prm("SddExplicit",1,0,(_v1)/50.0),prm("SddExplicit",2,0,(_v2)/50.0),prm("SddExplicit",3,0,(_v3)/50.0),prm("SddExplicit",4,0,(_v4)/50.0),prm("SddExplicit",5,0,(_v5)/50.0),prm("SddExplicit",6,0,(_v6)/50.0),prm("SddExplicit",7,0,(_v7)/50.0),prm("SddExplicit",8,0,(_v8)/50.0)) -2 SDD parameters
2 C '' -2 Controlling current name (repeatable)
END_ELEMENT
SDD9P SDD9P 2
1 SDD list(prm("SddExplicit",1,0,(_v1)/50.0),prm("SddExplicit",2,0,(_v2)/50.0),prm("SddExplicit",3,0,(_v3)/50.0),prm("SddExplicit",4,0,(_v4)/50.0),prm("SddExplicit",5,0,(_v5)/50.0),prm("SddExplicit",6,0,(_v6)/50.0),prm("SddExplicit",7,0,(_v7)/50.0),prm("SddExplicit",8,0,(_v8)/50.0),prm("SddExplicit",9,0,(_v9)/50.0)) -2 SDD parameters
2 C '' -2 Controlling current name (repeatable)
END_ELEMENT
SFDR SFDR 1
1 Function list(our_sfdr=sfdr(vout,3,nf2,1GHz,{1,0},{2,-1},50)) -1 sfdr(vout,ss_gain,noise_fig,noise_BW,fund_freq,IM_freq,ref_imped)
END_ELEMENT
SLC SLC 2
1 L 1.0nH 3 Inductance
2 C 1.0pF 4 Capacitance
END_ELEMENT
SLCQ SLCQ 9
1 L 120.0nH 3 Inductance
2 Ql 50.0 -1 Quality factor of L
3 Fl 100.0MHz 0 Frequency at which ql is given
4 ModL loss_freq -1 Loss Mode for inductor ql
5 C 21.0pF 4 Capacitance
6 Qc 100.0 -1 Quality factor of C
7 Fc 100.0MHz 0 Frequency at which qc is given
8 ModC loss_freq -1 Loss Mode for capacitor of qc
9 Rdc 0.0ohm 1 Resistance for modes 2 and 3
END_ELEMENT
SLEF SLEF 5
1 Subst SSub1 -1 Substrate instance name
2 W 25.0mils 5 Line Width
3 L 100.0mils 5 Line Length
4 Temp '' 12 Physical temperature
5 Layer smt_cond1 -1 (for Layout option ) conductor layer number
END_ELEMENT
SLIN SLIN 5
1 Subst SSub1 -1 Substrate instance name
2 W 25.0mils 5 Line Width
3 L 100.0mils 5 Line Length
4 Temp '' 12 Physical temperature
5 Layer smt_cond1 -1 (for Layout option ) conductor layer number
END_ELEMENT
SLINO SLINO 6
1 Subst SSub1 -1 Substrate instance name
2 W 25.0mils 5 Line Width
3 S 31.25mils 5 Middle Dielectric Layer Thickness
4 L 100.0mils 5 Line Length
5 Temp '' 12 Physical temperature
6 Layer smt_cond1 -1 (for Layout option ) conductor layer number
END_ELEMENT
SLOC SLOC 5
1 Subst SSub1 -1 Substrate instance name
2 W 25.0mils 5 Line Width
3 L 100.0mils 5 Line Length
4 Temp '' 12 Physical temperature
5 Layer smt_cond1 -1 (for Layout option ) conductor layer number
END_ELEMENT
SLSC SLSC 5
1 Subst SSub1 -1 Substrate instance name
2 W 25.0mils 5 Line Width
3 L 100.0mils 5 Line Length
4 Temp '' 12 Physical temperature
5 Layer smt_cond1 -1 (for Layout option ) conductor layer number
END_ELEMENT
SMITER SMITER 4
1 Subst SSub1 -1 Substrate instance name
2 W 25.0mils 5 Conductor Width
3 Temp '' 12 Physical temperature
4 Layer smt_cond1 -1 (for Layout option ) conductor layer number
END_ELEMENT
SMT_Pad SMT_Pad 6
1 W 10.0mils 5 Width of the pad
2 L 25.0mils 5 Length of the pad
3 PadLayer smt_bond -1 Layer of the pad
4 SMO 5.0mils 5 Solder mask overlap
5 SM_Layer smt_solder_mask -1 Solder mask layer
6 PO 0m 5 Pad offset from connection pin
END_ELEMENT
SNR SNR 1
1 Function list(our_snr=snr(vout,vout.noise,1GHz,{1,0})) -1 snr(vout,noise_out,noise_BW,fund_freq)
END_ELEMENT
SOCLIN SOCLIN 11
1 Subst SSub1 -1 Substrate instance name
2 W 25.0mils 5 Conductor Width
3 WO 15.0mils 5 Conductor Offset
4 S 31.25mils 5 Conductor Spacing
5 L 100.0mils 5 Conductor Length
6 Temp '' 12 Physical temperature
7 W1 5.0mils 5 (for Layout option) Offset from pin 1 to conductor centerline
8 W2 5.0mils 5 (for Layout option) Offset from pin 2 to conductor centerline
9 W3 5.0mils 5 (for Layout option) Offset from pin 3 to conductor centerline
10 W4 5.0mils 5 (for Layout option) Offset from pin 4 to conductor centerline
11 P1Layer smt_cond1 -1 (for Layout option ) layer associated with pin 1 conductor
END_ELEMENT
SPDT_Dynamic SPDT_Dynamic 2
1 Ron 0ohm 1 On-State Resistance of Switch
2 Roff 1Gohm 1 Off-State Resistance of Switch
END_ELEMENT
SPDT_Static SPDT_Static 12
1 State 1 -1 state of switch, 0(off), 1(on)
2 F1 '' 0 first frequency break point
3 F2 '' 0 second frequency break point
4 F3 '' 0 third frequency break point
5 Loss1 0.dB 13 attenuation in dB for frequencies <=F1
6 Loss2 0.dB 13 attenuation in dB for F1<frequency<=F2
7 Loss3 0.dB 13 attenuation in dB for F2>frequency<=F3
8 VSWR1 1. -1 VSWR at both ports for frequencies <=F1
9 VSWR2 1. -1 VSWR at both ports for F1<frequency<=F2
10 VSWR3 1. -1 VSWR at both ports for F2>frequency<=F3
11 Isolat 100dB 13 isolation in dB
12 ZRef 50ohm 1 reference impedance for all ports
END_ELEMENT
SRC SRC 2
1 R 1.0Mohm 1 Series resistance
2 C 1.0pF 4 Capacitance
END_ELEMENT
SRL SRL 2
1 R 1.0mohm 1 Series resistance
2 L 1.0nH 3 Inductance
END_ELEMENT
SRLC SRLC 3
1 R 1.0mohm 1 Series resistance
2 L 1.0nH 3 Inductance
3 C 1.0pF 4 Capacitance
END_ELEMENT
SSCLIN SSCLIN 9
1 Subst SSSub1 -1 Substrate instance name
2 W 25.0mils 5 Line Width
3 S 10.0mils 5 Spacing Between Lines
4 L 100.0mils 5 Line Length
5 Temp '' 12 Physical temperature
6 W1 5.0mils 5 (for Layout option) Width of line that connects to pin 1
7 W2 5.0mils 5 (for Layout option) Width of line that connects to pin 2
8 W3 5.0mils 5 (for Layout option) Width of line that connects to pin 3
9 W4 5.0mils 5 (for Layout option) Width of line that connects to pin 4
END_ELEMENT
SSLIN SSLIN 4
1 Subst SSSub1 -1 Substrate instance name
2 W 25.0mils 5 Line Width
3 L 100.0mils 5 Line Length
4 Temp '' 12 Physical temperature
END_ELEMENT
SSSUB SSSUB 10
1 H 25.0mils 5 Substrate thickness
2 Er 10.0 -1 Relative dielectric constant
3 Mur 1 -1 Relative permeability
4 Cond 1.0E+306 -1 Conductor conductivity
5 Hu 100.0mils 5 Cover height
6 Hl 100.0mils 5 Lower Ground Plane Spacing
7 T 0m 5 Conductor thickness
8 TanD 0 -1 Dielectric loss tangent
9 Rough 0m 5 Conductor surface roughness
10 Cond1 cond -1 (for Layout option) Layer to which cond is mapped
END_ELEMENT
SSTEP SSTEP 5
1 Subst SSub1 -1 Substrate instance name
2 W1 25.0mils 5 Conductor Width at Pin 1
3 W2 50.0mils 5 Conductor Width at Pin 2
4 Temp '' 12 Physical temperature
5 Layer smt_cond1 -1 (for Layout option ) conductor layer number
6 AutomaticWidth 'Disabled' -1
END_ELEMENT
SSUB SSUB 8
1 Er 2.5 -1 Relative dielectric constant
2 Mur 1 -1 Relative permeability
3 B 62.5mils 5 Ground Plane Spacing
4 T 0m 5 Conductor thickness
5 Cond 1.0E+306 -1 Conductor conductivity
6 TanD 0 -1 Dielectric loss tangent
7 Cond1 cond -1 (for Layout option) Layer to which cond is mapped
8 Cond2 cond2 -1 (for Layout option) Layer to which cond2 is mapped
END_ELEMENT
SSUBO SSUBO 9
1 Er 2.5 -1 Relative dielectric constant
2 Mur 1 -1 Relative permeability
3 S 31.25mils 5 Inter-layer spacing
4 B 62.5mils 5 Ground Plane Spacing
5 T 0m 5 Conductor thickness
6 Cond 1.0E+306 -1 Conductor conductivity
7 TanD 0 -1 Dielectric loss tangent
8 Cond1 cond -1 (for Layout option) Layer to which cond is mapped
9 Cond2 cond2 -1 (for Layout option) Layer to which cond2 is mapped
END_ELEMENT
STEE STEE 6
1 Subst SSub1 -1 Substrate instance name
2 W1 25.0mils 5 Conductor Width at Pin 1
3 W2 50.0mils 5 Conductor Width at Pin 2
4 W3 25.0mils 5 Conductor Width at Pin 3
5 Temp '' 12 Physical temperature
6 Layer smt_cond1 -1 (for Layout option ) conductor layer number
END_ELEMENT
S_Param S_Param 30
1 SweepVar freq -1 Name of variable or parameter to be swept
2 UseSweepPlan '' -1 Flag to indicate use of SweepPlan
3 SweepPlan '' -1 SweepPlan instance path name for sweep values
4 Start 1.0GHz 0 Start frequency
5 Stop 10.0GHz 0 Stop frequency
6 Step 1.0GHz 0 Step frequency
7 Center '' 0 Center frequency
8 Span '' 0 Span
9 Lin '' -1 Linear sweep
10 Dec '' -1 Number of points per decade
11 Log '' -1 Log sweep
12 Reverse '' -1 Reverse sweep
13 Pt '' 0 Frequency value if its not being swept
14 Sort 'LINEAR START STEP' -1 Sort frequencies
15 CalcS yes -1 Calculate S-parameters
16 CalcY no -1 Calculate Y- parameters
17 CalcZ no -1 Calculate Z-parameters
18 CalcGroupDelay '' -1 Calculate group delays
19 GroupDelayAperture 1e-4 -1 Frequency aperture used to calculate group delay
20 FreqConversion No -1 Enable AC frequency conversion
21 FreqConversionPort 1 -1 S-parameter frequency conversion input port
22 UseFiniteDiff '' -1 Use finite differences for sensitivities
23 NestLevel 2 -1 Levels of subcircuits to output
24 StatusLevel 2 -1 Degree of annotation
25 CalcNoise no -1 Calculate noise parameters
26 SortNoise NoiseSortOff -1 Sort Noise Contribution by: Value/1, Name/2 (default: 0/NoOutput)
27 NoiseThresh '' -1 Noise Contribution Threshold
28 BandwidthForNoise 1.0Hz 0 Bandwidth for noise analysis
29 Freq '' 0 Frequency if not being swept
30 Other '' -1 Output string to netlist
END_ELEMENT
S_StabCircle S_StabCircle 1
1 Function list(our_s_stabcir=s_stab_circle(S,51)) -1 s_stab_circle(2x2 S_matrix,num_of_pts)
END_ELEMENT
SampleHoldSML SampleHoldSML 1
1 Fnom 0Hz 0 Nominal Input and Output Frequency
END_ELEMENT
Sampler Sampler 4
1 Ton 1nsec 6 ON-State pulse width, switch in low impedance state
2 Ron 1ohm 1 ON-State resistance, switch in low impedance state
3 S11 0 -1 Input reflection coefficient
4 Z0 50ohm 1 Input port characteristic impedance
END_ELEMENT
SerialParallel SerialParallel 5
1 InputRate 50KHz 0 Serial Input Data Clock Rate
2 LSB_First y_n1 -1 Serial Data Arrives with Least Significant Bit First
3 Delay 0.0nsec 6 Initial Synchronization Delay
4 OutputBits 4 -1 Number of Bits in Output Word
5 IntegerOut y_n1 -1 Scale output data as integers instead of from -1 to 1
END_ELEMENT
Short Short 5
1 Mode 0 -1 Mode: 0 => short, >0 => DC block, <0 => DC feed
2 C '' 4 DC block capacitance (transient only)
3 L '' 3 DC feed inductance(transient only)
4 Gain '' -1 Current gain
5 wImax '' 10 Maximum current (warning)
END_ELEMENT
SmGamma1 SmGamma1 1
1 Function list(our_smg1=sm_gamma1(S)) -1 sm_gamma1(2x2 S_matrix)
END_ELEMENT
SmGamma2 SmGamma2 1
1 Function list(our_smg2=sm_gamma2(S)) -1 sm_gamma2(2x2 S_matrix)
END_ELEMENT
SmY1 SmY1 1
1 Function list(our_smy1=sm_y1(S,PortZ1)) -1 sm_y1(2x2 S_matrix, input_port_imped)
END_ELEMENT
SmY2 SmY2 1
1 Function list(our_smy2=sm_y2(S,PortZ2)) -1 sm_y2(2x2 S_matrix, output_port_imped)
END_ELEMENT
SmZ1 SmZ1 1
1 Function list(our_smz1=sm_z1(S,PortZ1)) -1 sm_z1(2x2 S_matrix, input_port_imped)
END_ELEMENT
SmZ2 SmZ2 1
1 Function list(our_smz2=sm_z2(S,PortZ2)) -1 sm_z2(2x2 S_matrix, output_port_imped)
END_ELEMENT
StabFact StabFact 1
1 Function list(our_k=stab_fact(S)) -1 stab_fact(2x2 S_matrix)
END_ELEMENT
StabMeas StabMeas 1
1 Function list(our_b=stab_meas(S)) -1 stab_meas(2x2 S_matrix)
END_ELEMENT
Statz_Model Statz_Model 57
1 NFET y_n1 -1 Model Type - YES or NO
2 PFET y_n0 -1 Model Type - YES or NO
3 Idsmod 3 -1 1=CQ 2=CC 3=Statz 4=Materka 5=Tajima 6=symbolic 7=TOM 8=Modified Materka
4 Vto '' 9 Threshold voltage, V
5 Beta '' -1 Transconductance parameter, A/V^2
6 Lambda '' -1 Channel length modulation parameter, 1/V
7 Alpha '' -1 Current saturation parameter, 1/V
8 B '' -1 Doping tail extending parameter
9 Tnom '' 12 Nominal ambient temperature, Celsius
10 Idstc '' -1 Ids temperature coefficient
11 Vbi '' 9 Built-in gate potential, V
12 Tau '' 6 Transit time under gate, S
13 Betatce '' -1 BETA Exponential Temperature Coefficient, %/Degree C
14 Delta1 '' 9 Capacitance saturation transition voltage parameter, V
15 Delta2 '' 9 Capacitance threshold transition voltage parameter, V
16 Gscap '' -1 0=none 1=linear 2=junction 3=Statz Charge 5=Statz Cap
17 Cgs '' 4 Zero-bias G-S junction Cap., F
18 Gdcap '' 4 0=none 1=linear 2=junction 3=Statz Charge 5=Statz Cap
19 Cgd '' 4 Zero-bias G-D junction Cap., F
20 Rgd '' 1 Gate Drain resistance, Ohm
21 Tqm '' -1 Temperature coefficient for triquint junction capacitance
22 Vmax '' 9 Maximum junction voltage before capacitance limiting
23 Fc '' -1 Coefficient for forward-bias depletion cap.
24 Rd '' 1 Drain ohmic resistance, Ohm
25 Rg '' 1 Gate resistance, Ohm
26 Rs '' 1 Source ohmic resistance, Ohm
27 Ld '' 3 Drain inductance, H
28 Lg '' 3 Gate inductance, H
29 Ls '' 3 Source inductance, H
30 Cds '' 4 Drain-source Cap., F
31 Crf '' 4 Used with RC to model freq. dependent output conductance, F
32 Rc '' 1 Used with CRF to model freq. dependent output conductance (0. means infinity), Ohm
33 Gsfwd '' -1 0=none 1=linear 2=diode
34 Gsrev '' -1 0=none 1=linear 2=diode
35 Gdfwd '' -1 0=none 1=linear 2=diode
36 Gdrev '' -1 0=none 1=linear 2=diode
37 Vjr '' 9 Breakdown junction potential
38 Is '' 10 Gate junction saturation current, A
39 Ir '' 10 Gate rev saturation current, A
40 Imax '' 10 Explosion current, A
41 Xti '' -1 Saturation Current Temperature Exponent
42 N '' -1 Gate junction emission coefficient
43 Eg '' -1 Energy Gap for Temperature Effect on IS
44 Vbr '' 9 Gate junction reverse bias breakdown voltage (0. means infinity), V
45 Vtotc '' -1 VTO Temperature Coefficient, V/Degree C
46 Rin '' 1 Channel resistance, Ohm
47 Taumdl y_n0 -1 Use 2nd order Bessel polynomial to model tau effect in transient
48 Fnc '' 0 Flicker noise corner frequency
49 R '' -1 Gate noise coefficient
50 C '' -1 Gate-drain noise correlation coefficient.
51 P '' -1 Drain noise coefficient
52 wVgfwd '' 9 Gate junction forward bias (warning), V
53 wBvgs '' 9 Gate-source reverse breakdown voltage (warning), V
54 wBvgd '' 9 Gate-drain reverse breakdown voltage (warning), V
55 wBvds '' 9 Drain-source breakdown voltage (warning), V
56 wIdsmax '' 10 Maximum drain-source current (warning), A
57 wPmax '' 8 Maximum power dissipation (warning), W
END_ELEMENT
SweepPlan SweepPlan 4
1 SweepPlanParm list(prm("LinearStart",1.0,10.0,1.0,)) -1 Sweep Plan Parameters
2 UseSweepPlan '' -1 Flag to indicate use of SweepPlan
3 SweepPlan '' -1 SWEEP plan instance/path name to append to sweep
4 Sort 'LINEAR START STEP' -1 Single point
END_ELEMENT
SwitchV SwitchV 5
1 Model SWITCHVM1 -1 Model instance name
2 R1 1.0ohm 1 Resistance at voltage 1
3 V1 0.0V 9 Voltage 1
4 R2 1.0Mohm 1 Resistance at voltage 2
5 V2 1.0V 9 Voltage 2
END_ELEMENT
SwitchV_Model SwitchV_Model 4
1 R1 1.0ohm 1 Resistance at voltage 1
2 V1 0.0V 9 Voltage 1
3 R2 1.0Mohm 1 Resistance at voltage 2
4 V2 1.0V 9 Voltage 2
END_ELEMENT
TAPIND1 TAPIND1 7
1 N1 5.0 -1 Number of turns between pins 1 and 3
2 N2 10.0 -1 Number of turns between pins 2 and 3
3 D 210.0mils 5 Diameter of coil
4 L 400.0mils 5 Length of coil
5 WD 32.0mils 5 Wire diameter
6 Rho 1.0 -1 Metal Resistivity (Relative to copper)
7 Temp '' 12 Physical temperature
END_ELEMENT
TAPIND2 TAPIND2 7
1 N1 5.0 -1 Number of turns between pins 1 and 3
2 N2 10.0 -1 Number of turns between pins 2 and 3
3 D 210.0mils 5 Diameter of coil
4 L 400.0mils 5 Length of coil
5 AWG 20 -1 Wire gauge
6 Rho 1.0 -1 Metal Resistivity (Relative to copper)
7 Temp '' 12 Physical temperature
END_ELEMENT
TEST_MEANDER_FINAL TEST_MEANDER_FINAL 16
1 N 0 -1 Number of points (not including mousepoint)
2 W 10.0mils 5 Width of meander line
3 Subst MSub1 -1 Substrate
4 Layer smt_cond -1 Layer
5 X0 0mils 5 XOrigin of (U,V) -- not used in shape directly
6 Y0 0mils 5 YOrigin of (U,V) -- not used in shape directly
7 AbsA 0deg 7 Angle CCW of positive U axis with positive X axis -- not used in shape directly
8 A 0deg 7 Angle CCW between shape and PA's port angle
9 CType 0 -1 0=mitre, 1=circle, 2=square
10 MP 30 -1 Mitre percentage
11 R 5.0mils 5 Circle endpoint radius
12 PA '' -1 Name of pin attached to the start of this meander line -- not used in shape directly
13 PB '' -1 Name of pin attached to the end of this meander line -- not used in shape directly
14 StripType MICROSTRIP -1 Type; can be MICROSTRIP, PCBTRACE, or STRIPLINE
15 FixedLength 0mils 5 Placeholder for returned fixed length generated during shape calc
16 MovableLength 0mils 5 Placeholder for returned movable length generated during shape calc
END_ELEMENT
TEST_MEANDER_FIXED TEST_MEANDER_FIXED 15
1 N 0 -1 Number of points (not including mousepoint)
2 W 10.0mils 5 Width of meander line
3 Subst MSub1 -1 Substrate
4 Layer smt_cond -1 Layer
5 X0 0mils 5 XOrigin of (U,V) -- not used in shape directly
6 Y0 0mils 5 YOrigin of (U,V) -- not used in shape directly
7 AbsA 0deg 7 Angle CCW of positive U axis with positive X axis -- not used in shape directly
8 A 0deg 7 Angle CCW between shape and PA's port angle
9 CType 0 -1 0=mitre, 1=circle, 2=square
10 MP 50 -1 Mitre percentage
11 R 5.0mils 5 Circle endpoint radius
12 PA '' -1 Name of pin attached to the start of this meander line -- not used in shape directly
13 PB '' -1 Name of pin attached to the end of this meander line -- not used in shape directly
14 StripType MICROSTRIP -1 Type; can be MICROSTRIP, PCBTRACE, or STRIPLINE
15 FixedLength 0mils 5 Placeholder for returned fixed length generated during shape calc
END_ELEMENT
TEST_MEANDER_MOVABLE TEST_MEANDER_MOVABLE 15
1 N 0 -1 Number of points (not including mousepoint)
2 W 10.0mils 5 Width of meander line
3 Subst MSub1 -1 Substrate
4 Layer smt_cond -1 Layer
5 X0 0mils 5 XOrigin of (U,V) -- not used in shape directly
6 Y0 0mils 5 YOrigin of (U,V) -- not used in shape directly
7 AbsA 0deg 7 Angle CCW of positive U axis with positive X axis -- not used in shape directly
8 A 0deg 7 Angle CCW between shape and PA's port angle
9 CType 0 -1 0=mitre, 1=circle, 2=square
10 MP 50 -1 Mitre percentage
11 R 5.0mils 5 Circle endpoint radius
12 PA '' -1 Name of pin attached to the start of this meander line -- not used in shape directly
13 PB '' -1 Name of pin attached to the end of this meander line -- not used in shape directly
14 StripType MICROSTRIP -1 Type; can be MICROSTRIP, PCBTRACE, or STRIPLINE
15 MovableLength 0mils 5 Placeholder for returned movable length generated during shape calc
END_ELEMENT
TF TF 1
1 T 1.00 -1 turn
END_ELEMENT
TF3 TF3 2
1 T1 1.00 -1 turn 1
2 T2 1.00 -1 turn 2
END_ELEMENT
TFC TFC 11
1 W 25.0mils 5 Conductor width
2 L 10.0mils 5 Conductor length
3 T 0.2mils 5 Dielectric thickness
4 Er 5.33 -1 Dielectric constant
5 Rho 1.0 -1 Metal resistivity (relative to gold)
6 TanD 0 -1 Dielectric loss tangent
7 Temp '' 12 Physical temperature
8 CO 5.0mils 5 (for Layout option) Conductor overlap
9 DO 5.0mils 5 (for Layout option) Dielectric overlap
10 DielLayer smt_diel -1 (for Layout option) Layer on which the dielectric is drawn
11 Cond2Layer smt_cond2 -1 (for Layout option) Layer on which the airbridge is drawn
END_ELEMENT
TFR TFR 7
1 Subst MSub1 -1 Substrate instance name
2 W 25.0mils 5 Conductor width
3 L 10.0mils 5 Conductor length
4 Rs 50.0ohm 1 Sheet resistivity
5 Freq 0Hz 0 Frequency for scaling sheet resistivity
6 Temp '' 12 Physical temperature
7 CO 5.0mils 5 (for Layout option) Conductor offset; distance from edge of conductor
END_ELEMENT
TLIN TLIN 3
1 Z 50.0ohm 1 Characteristic Impedance
2 E 90deg 7 Electrical Length
3 F 1GHz 0 Reference Frequency for Electrical Length
END_ELEMENT
TLIN4 TLIN4 3
1 Z 50.0ohm 1 Characteristic Impedance
2 E 90deg 7 Electrical Length
3 F 1GHz 0 Reference Frequency for Electrical Length
END_ELEMENT
TLINP TLINP 10
1 Z 50.0ohm 1 Characteristic Impedance
2 L 1000.0mils 5 Length
3 K 2.1 -1 Effective Dielectric Constant
4 A 0.0001 -1 Attenuation (dB / meter)
5 F 1GHz 0 Frequency for Scaling Attenuation
6 TanD 0.002 -1 Dielectric loss tangent
7 Mur 1 -1 Relative permeability
8 TanM 0 -1 Permeability
9 Sigma 0 -1 Dielectric conductivity
10 Temp '' 12 Physical temperature
END_ELEMENT
TLINP4 TLINP4 10
1 Z 50.0ohm 1 Characteristic Impedance
2 L 1000.0mils 5 Length
3 K 2.1 -1 Effective Dielectric Constant
4 A 0.0001 -1 Attenuation (dB / meter)
5 F 1GHz 0 Frequency for Scaling Attenuation
6 TanD 0.002 -1 Dielectric loss tangent
7 Mur 1 -1 Relative permeability
8 TanM 0 -1 Permeability
9 Sigma 0 -1 Dielectric conductivity
10 Temp '' 12 Physical temperature
END_ELEMENT
TLOC TLOC 3
1 Z 50.0ohm 1 Characteristic Impedance
2 E 90deg 7 Electrical Length
3 F 1GHz 0 Reference Frequency for Electrical Length
END_ELEMENT
TLPOC TLPOC 10
1 Z 50.0ohm 1 Characteristic Impedance
2 L 1000.0mils 5 Length
3 K 2.1 -1 Effective Dielectric Constant
4 A 0.0001 -1 Attenuation (dB / meter)
5 F 1GHz 0 Frequency for Scaling Attenuation
6 TanD 0.002 -1 Dielectric loss tangent
7 Mur 1 -1 Relative permeability
8 TanM 0 -1 Permeability
9 Sigma 0 -1 Dielectric conductivity
10 Temp '' 12 Physical temperature
END_ELEMENT
TLPSC TLPSC 10
1 Z 50.0ohm 1 Characteristic Impedance
2 L 1000.0mils 5 Length
3 K 2.1 -1 Effective Dielectric Constant
4 A 0.0001 -1 Attenuation (dB / meter)
5 F 1GHz 0 Frequency for Scaling Attenuation
6 TanD 0.002 -1 Dielectric loss tangent
7 Mur 1 -1 Relative permeability
8 TanM 0 -1 Permeability
9 Sigma 0 -1 Dielectric conductivity
10 Temp '' 12 Physical temperature
END_ELEMENT
TLSC TLSC 3
1 Z 50.0ohm 1 Characteristic Impedance
2 E 90deg 7 Electrical Length
3 F 1GHz 0 Reference Frequency for Electrical Length
END_ELEMENT
TOM_Model TOM_Model 50
1 Idsmod 7 -1 1=CQ 2=CC 3=Statz 4=Materka 5=Tajima 6=symbolic 7=TOM 8=Modified Materka
2 Vto '' 9 Threshold voltage, V
3 Alpha '' -1 Saturation voltage coefficient, 1/V
4 Beta '' -1 Transconductance coefficient, A/V^Q
5 Tqdelta '' -1 Output feedback coefficient, 1/W
6 Tqgamma '' -1 DC drain pull coefficient, dimensionless
7 Tnom '' 12 Nominal ambient temperature, Celsius
8 Q '' -1 Power law exponent, dimensionless
9 Tau '' 6 Conduction current delay time, S
10 Vtotc '' -1 VTO Temperature Coefficient, V/Degree C
11 Betatce '' -1 BETA Exponential Temperature Coefficient, %/Degree C
12 Cgs '' 4 Zero-bias gate-source capacitance, F
13 Cgd '' 4 Zero-bias gate-drain capacitance, F
14 Vbi '' 9 Gate diode built-in potential, V
15 Tqm '' -1 Temperature coefficient for triquint junction capacitance
16 Vmax '' 9 Maximum junction voltage before capacitance limiting
17 Fc '' -1 Depletion capacitance coefficient, dimensionless
18 Delta1 '' 9 Capacitance saturation transition voltage parameter, V
19 Delta2 '' 9 Capacitance threshold transition voltage parameter, V
20 M '' -1 Grading Coefficient
21 Is '' 10 Gate diode saturation current, A
22 N '' -1 Gate diode emission coefficient, dimensionless
23 Eg '' -1 Energy Gap for Temperature Effect on IS
24 Xti '' -1 Saturation Current Temperature Exponent
25 Vbr '' 9 Gate diode breakdown voltage (0. means infinity), V
26 Rg '' 1 Gate ohmic resistance, Ohms
27 Rd '' 1 Drain contact resistance, Ohms
28 Rs '' 1 Source contact resistance, Ohms
29 Trg1 '' -1 Linear temperature coefficient for RG 1/degC
30 Trd1 '' -1 Linear temperature coefficient for RD 1/degC
31 Trs1 '' -1 Linear temperature coefficient for RS 1/degC
32 Cds '' 4 Drain source capacitance, F
33 Rgmet '' 1 Gate metal resistance, Ohms
34 Vtosc '' 9 Threshold voltage scaling coefficient, V
35 Ris '' 1 Source end channel resistance, Ohms
36 Rid '' 1 Drain end channel resistance, Ohms
37 Rdb '' 1 Dispersion source output impedence (0. means infinity), Ohms
38 Cbs '' 4 Dispersion source capacitance, F
39 Fnc '' 0 Flicker noise corner frequency
40 R '' -1 Gate noise coefficient
41 P '' -1 Drain noise coefficient
42 Taumdl y_n0 -1 Use 2nd order Bessel polynomial to model tau effect in transient
43 Ugw '' 5 Unit gate width of device(default: 1um)
44 Ngf '' -1 Number of device gate fingers(default: 1)
45 wVgfwd '' 9 Gate junction forward bias (warning), V
46 wBvgs '' 9 Gate-source reverse breakdown voltage (warning), V
47 wBvgd '' 9 Gate-drain reverse breakdown voltage (warning), V
48 wBvds '' 9 Drain-source breakdown voltage (warning), V
49 wIdsmax '' 10 Maximum drain-source current (warning), A
50 wPmax '' 8 Maximum power dissipation (warning), W
END_ELEMENT
Tajima_Model Tajima_Model 44
1 NFET y_n1 -1 Model Type - YES or NO
2 PFET y_n0 -1 Model Type - YES or NO
3 Idsmod 5 -1 1=CQ 2=CC 3=Statz 4=Materka 5=Tajima 6=symbolic 7=TOM 8=Modified Materka
4 Vdss '' 9 Model 5: Drain current saturation voltage, V
5 Vto '' 9 Value of V1 below which Ids = Ids(V1=VTO,Vds), V
6 Beta2 '' -2 Pinch-off change with Vds, 1/V
7 Ta '' -2 Model 5: a coef
8 Tb '' -2 Model 5: b coef
9 Tm '' -2 Model 5: m coef
10 Idss '' 10 Model 4: Idss value, A
11 Rin '' 1 Channel resistance, Ohm
12 Fc '' -1 Coefficient for forward-bias depletion cap.
13 Gscap '' -1 0=none 1=linear 2=junction 3=Statz Charge 5=Statz Cap
14 Cgs '' 4 Zero-bias G-S junction cap., F
15 Gdcap '' -1 0=none 1=linear 2=junction 3=Statz Charge 5=Statz Cap
16 Cgd '' 4 Zero-bias G-D junction cap., F
17 Rd '' 1 Drain ohmic resistance, Ohm
18 Rg '' 1 Gate resistance, Ohm
19 Rs '' 1 Source ohmic resistance, Ohm
20 Ld '' 3 Drain inductance, H
21 Lg '' 3 Gate inductance, H
22 Ls '' 3 Source inductance, H
23 Cds '' 4 Drain-source cap., F
24 Crf '' 4 Used with RDS to model freq. dependent output conductance, F
25 Rc '' 1 Additional output resistance for RF operation (0. means infinity), Ohm
26 Gsfwd '' -1 0=none 1=linear 2=diode
27 Gsrev '' -1 0=none 1=linear 2=diode
28 Gdfwd '' -1 0=none 1=linear 2=diode
29 Gdrev '' -1 0=none 1=linear 2=diode
30 Vbi '' 9 Built-in gate potential, V
31 Is '' 10 Gate junction saturation current, A
32 Imax '' 10 Explosion current, A
33 N '' -1 Gate Junction emission coefficient
34 Fnc '' 0 Flicker noise corner frequency
35 R '' -1 Gate noise coefficient
36 P '' -1 Drain noise coefficient
37 C '' -1 Gate-drain noise correlation coefficient.
38 Tnom '' 12 Nominal ambient temperature, Celsius
39 wVgfwd '' 9 Gate junction forward bias (warning), V
40 wBvgs '' 9 Gate-source reverse breakdown voltage (warning), V
41 wBvgd '' 9 Gate-drain reverse breakdown voltage (warning), V
42 wBvds '' 9 Drain-source breakdown voltage (warning), V
43 wIdsmax '' 10 Maximum drain-source current (warning), A
44 wPmax '' 8 Maximum power dissipation (warning), W
END_ELEMENT
Term Term 4
1 Num 1 -1 Port number
2 Z 50ohm 1 Reference impedance, use 1+j*0 for complex
3 Noise y_n1 -1 Enable/disable port thermal noise
4 Vdc '' 9 Open circuit DC voltage
END_ELEMENT
TimeDelay TimeDelay 3
1 Delay 1.sec 6 Time Delay
2 RTConj y_n0 -1 Reverse Transmission Conjugate, Yes to apply
3 ZRef 50.ohm 1 Reference Impedance for All Ports
END_ELEMENT
TimeDelta TimeDelta 5
1 Direction1 1 -1 Direction One
2 Direction2 1 -1 Direction Two
3 Thresh1 0V 9 Thresh One
4 Thresh2 0V 9 Thresh Two
5 Scale 1e+6 -1 Scale Factor
END_ELEMENT
TimeFrq TimeFrq 3
1 Direction 1 -1 Direction One
2 Thresh 0V 9 Thresh One
3 Scale 1e+6 -1 Scale Factor
END_ELEMENT
TimePeriod TimePeriod 3
1 Direction 1 -1 Direction One
2 Thresh 0V 9 Thresh One
3 Scale 1e+6 -1 Scale Factor
END_ELEMENT
TimeStamp TimeStamp 3
1 Direction 1 -1 Direction One
2 Thresh 0V 9 Thresh One
3 Scale 1e+6 -1 Scale Factor
END_ELEMENT
Tran Tran 35
1 StartTime 0.0nsec 6 Initial time in this analysis
2 StopTime 100.0nsec 6 Final time in this analysis
3 MaxTimeStep 1.0nsec 6 Maximum time-step for integration
4 MinTimeStep '' 6 Minimum time-step for integration
5 LimitStepForTL YES -1 Limit timestep to half of minimum transmission line delay.
6 TimeStepControl TimeStepTruncError -1 Timestep method
7 TruncTol 7.0 -1 Local truncation error overestimation factor
8 ChargeTol 1.0e-14 -1 Accuracy for charges in lte
9 IntegMethod IntegTrapezoidal -1 Use Gear integration instead of trapezoidal
10 MaxGearOrder 6 -1 Maximum order for Gear integration
11 Mu 0.5 -1 Coefficient for mixing trapezoidal and backward Euler
12 Freq '' 0 Frequency of fundamentals(repeatable)
13 ImpApprox NO -1 Use Approximate models
14 ShortTL_Delay 1.0psec 6 Approximate short transmission lines.
15 ImpMaxFreq '' 0 Maximum frequency for device evaluation.
16 ImpDeltaFreq '' 0 Sample spacing in frequency.
17 ImpMaxPts 4096 -1 Maximum allowed points in impulse response.
18 ImpRelTrunc 1.0e-4 -1 Relative impulse Response truncation factor.
19 ImpAbsTrunc 1.0e-7 -1 Absolute impulse Response truncation factor.
20 ImpInterpOrder ImpInterpOrder1 -1 Interpolation order during the convolution.
21 ImpMode CModeDiscrete -1 Convolution mode.
22 ImpWindow WindowTypeHanning -1 Smoothing Window.
23 ImpNoncausalLength 32 -1 Non-causal function impulse response order.
24 UseInitCond NO -1 Use user specified initial condition.
25 LoadGminDC NO -1 Connect every node to ground with a big resistor at initial dc analysis
26 CheckKCL YES -1 Perform KCL check for convergence.
27 CheckOnlyDeltaV YES -1 Check only delta voltage for convergence.
28 OverloadAlert NO -1 Check for strange behavior at every timestep.
29 DeviceBypass NO -1 Skip device evaluation if voltage changes are small between iterations
30 MaxIters 10 -1 Maximum number of iterations per time-step.
31 MaxItersDC 200 -1 Maximum number of iterations at initial dc analysis before source stepping.
32 DevOpPtLevel DeviceOpNone -1 Level of devices DC Operating Point Data to ouput
33 StatusLevel 2 -1 Degree of annotation
34 NestLevel 2 -1 Levels of subcircuits to output
35 Other '' -1 Output string to netlist
END_ELEMENT
Transformer Transformer 2
1 N 1 -1 turns ratio
2 ZRef 50.ohm 1 reference impedance for all ports
END_ELEMENT
TransformerG TransformerG 2
1 N 1 -1 turns ratio
2 ZRef 50.ohm 1 reference impedance for all ports
END_ELEMENT
TwoPort TwoPort 7
1 S21 1 -1 Forward Transmission Coefficient, Complex Number: 1+j*0, polar(), dbpolar()
2 S12 1 -1 Reverse Transmission Coefficient, Complex Number: 1+j*0, polar(), dbpolar()
3 S11 0 -1 Port1 Reflection Coefficient, Complex Number: 1+j*0, polar(), dbpolar()
4 S22 0 -1 Port2 Reflection Coefficient, Complex Number: 1+j*0, polar(), dbpolar()
5 ZRef 50ohm 1 Reference Impedance for All Ports
6 Temp '' 12 Temperature in degrees Celsius
7 Delay '' 6 Time Delay
END_ELEMENT
UFINL UFINL 4
1 Subst FSub1 -1 Substrate instance name
2 D 20.0mils 5 Width of gap
3 L 1000.0mils 5 Length of finline
4 Temp '' 12 Physical temperature
END_ELEMENT
UFINLT UFINLT 3
1 Subst FSub1 -1 Substrate instance name
2 D 20.0mils 5 Width of gap
3 Temp '' 12 Physical temperature
END_ELEMENT
#VAR VAR 1
# 1 Variable_Value list(prm("VarFormStdForm",X,1.0)) -1 Variable equation
#END_ELEMENT
VBIC_Model VBIC_Model 96
1 NPN y_n1 -1 Model Type - YES or NO
2 PNP y_n0 -1 Model Type - YES or NO
3 Tnom '' 12 Nominal ambient temperature, Celsius
4 Rcx '' 1 Extrinsic Collector Resistance, Ohm
5 Rci '' 1 Intrinsic Collector Resistance, Ohm
6 Vo '' 9 Epi drift saturation voltage, V
7 Gamm '' -1 Epi doping parameter
8 Hrcf '' -1 High current RC factor
9 Rbx '' 1 Extrinsic Base Resistance, Ohm
10 Rbi '' 1 Intrinsic Base Resistance, Ohm
11 Re '' 1 Emitter Resistance, Ohm
12 Rs '' 1 Substrate Resistance, Ohm
13 Rbp '' 1 Parasitic Base Resistance, Ohm
14 Is '' 10 Transport Saturation Current, A
15 Nf '' -1 Forward Emission Coefficient
16 Nr '' -1 Reverse Emission Coefficient
17 Fc '' -1 Forward-bias Junction Cap. Threshold
18 Cbeo '' 4 B-E Small Signal Cap., F
19 Cje '' 4 B-E Zero-bias Junction Cap., F
20 Pe '' -1 B-E Grading Coefficient
21 Me '' -1 B-E Junction Exponent
22 Aje '' -1 B-E Capacitance Smoothing factor
23 Cbco '' 4 B-C Small Signal Cap., F
24 Cjc '' 4 B-C Zero-bias Junction Cap., F
25 Qco '' -1 Collector Charge at Zero-bias, C
26 Cjep '' 4 B-E Zero-bias Extrinsic Cap., F
27 Pc '' -1 B-C Grading Coefficient
28 Mc '' -1 B-C Junction Exponent
29 Ajc '' -1 B-C Capacitance Smoothing factor
30 Cjcp '' 4 B-C Zero-bias Extrinsic Cap., F
31 Ps '' -1 C-S Grading Coefficient
32 Ms '' -1 C-S Junction Exponent
33 Ajs '' -1 C-S Capacitance Smoothing factor
34 Ibei '' 10 Ideal B-E Saturation Current
35 Wbe '' -1 Portion of Ibei from Vbei
36 Nei '' -1 Ideal B-E Emission Coefficient
37 Iben '' 10 Non-ideal B-E Saturation Current
38 Nen '' -1 Non-ideal B-E Emission Coefficient
39 Ibci '' 10 Ideal B-C Saturation Current
40 Nci '' -1 Ideal B-C Emission Coefficient
41 Ibcn '' 10 Non-ideal B-C Saturation Current
42 Ncn '' -1 Non-ideal B-C Emission Coefficient
43 Isp '' 10 Parasitic Transport Saturation Current
44 Wsp '' -1 Portion of Iccp from Vbep
45 Nfp '' -1 Parasitic Forward Emission Coefficient
46 Ibeip '' 10 Ideal Parasitic B-E Saturation Current
47 Ibenp '' 10 Non-ideal Parasitic B-E Saturation Current
48 Ibcip '' 10 Ideal Parasitic B-C Saturation Current
49 Ncip '' -1 Ideal Parasitic B-C Emission Coefficient
50 Ibcnp '' 10 Non-ideal Parasitic B-C Saturation Current
51 Avc1 '' -1 B-C Weak Avalanche Parameter 1
52 Avc2 '' -1 B-C Weak Avalanche Parameter 2
53 Ncnp '' -1 Non-ideal Parasitic B-C Emission Coefficient
54 Vef '' 9 Forward Early Voltage (0. Means Infinity), V
55 Ver '' 9 Reverse Early Voltage (0. Means Infinity), V
56 Ikf '' 10 Forward Knee Current, A
57 Ikr '' 10 Reverse Knee Current, A
58 Ikp '' 10 Parasitic Knee Current, A
59 Tf '' 6 Ideal Forward Transit Time, S
60 Qtf '' -1 Variation of TF with Base-Width Modulation
61 Xtf '' -1 Coefficient of Bias Dependence for TF
62 Vtf '' -1 Coefficient of Vbc Dependence for TF
63 Itf '' -1 Coefficient of Icc Dependence for TF
64 Tr '' 6 Ideal Reverse Transit Time, S
65 Td '' 6 Forward Excess-Phase Delay Time, S
66 Kfn '' -1 Flicker Noise Coefficient
67 Afn '' -1 Flicker Noise Exponent
68 Bfn '' -1 Flicker Noise Frequency Exponent
69 Xre '' -1 Temperature Exponent of Emitter Resistance
70 Xrb '' -1 Temperature Exponent of Base Resistance
71 Xrc '' -1 Temperature Exponent of Collector Resistance
72 Xrs '' -1 Temperature Exponent of Substrate Resistance
73 Xvo '' -1 Temperature Exponent of VO
74 Ea '' -1 Activation Energy for IS, eV
75 Eaie '' -1 Activation Energy for IBEI, eV
76 Eaic '' -1 Activation Energy for IBCI/IBEIP, eV
77 Eais '' -1 Activation Energy for IBCIP, eV
78 Eane '' -1 Activation Energy for IBEN, eV
79 Eanc '' -1 Activation Energy for IBCN/IBENP, eV
80 Eans '' -1 Activation Energy for IBCNP, eV
81 Xis '' -1 Temperature Exponent of IS
82 Xii '' -1 Temperature Exponent of IBEI/IBCI/IBEIP/IBCIP
83 Xin '' -1 Temperature Exponent of IBEN/IBCN/IBENP/IBCNP
84 Tnf '' -1 Temperature Coefficient of NF
85 Tavc '' -1 Temperature Coefficient of TAVC
86 Rth '' 1 Thermal Resistance, Ohm
87 Cth '' 4 Thermal Capacitance, F
88 Imax '' 10 Explosion current, A
89 wVsubfwd '' 9 Substrate Junction Forward Bias (warning), V
90 wBvsub '' 9 Substrate Junction Reverse Breakdown Voltage (warning), V
91 wBvbe '' 9 Base-Emitter Reverse Breakdown Voltage (warning), V
92 wBvbc '' 9 Base-Collector Reverse Breakdown Voltage (warning), V
93 wVbcfwd '' 9 Base-Collector Forward Bias (warning), V
94 wIbmax '' 10 Maximum Base Current (warning), A
95 wIcmax '' 10 Maximum Collector Current (warning), A
96 wPmax '' 8 Maximum Power Dissipation (warning), W
END_ELEMENT
VBIC_NPN VBIC_NPN 5
1 Model VBICM1 -1 Model instance name
2 Scale '' -1 Scaling Factor
3 Region '' -1 DC operating region, 0=off, 1=on, 2=rev, 3=sat
4 Temp '' 12 Device operating temperature
5 Mode simtype_nonlin -1 Simulation Mode for This Device
END_ELEMENT
VBIC_PNP VBIC_PNP 5
1 Model VBICM1 -1 Model instance name
2 Scale '' -1 Scaling Factor
3 Region '' -1 DC operating region, 0=off, 1=on, 2=rev, 3=sat
4 Temp '' 12 Device operating temperature
5 Mode simtype_nonlin -1 Simulation Mode for This Device
END_ELEMENT
VCCS VCCS 5
1 G 1S 2 Complex transconductance, e.g. polar(1 S, 45), or P(j*omega)/Q(j*omega)
2 T 1.0nsec 6 Time delay
3 R1 1e100ohm 1 Input Resistance
4 R2 1e100ohm 1 Output Resistance
5 F 0.0GHz 0 Frequency at which G magnitude is down 3 dB
END_ELEMENT
VCCS_Z VCCS_Z 4
1 Gain 1 -1 Constant gain term
2 Num 1 -1 Numerator coefficients of transfer function
3 Den list(1,sqrt(2),1) -1 Denominator coefficients of transfer function
4 TimeStep timestep 6 Sampling time period
END_ELEMENT
VCO VCO 6
1 Kv 1.0KHz 0 Frequency Tuning Sensitivity (Hz/Volt)
2 Freq 1GHz 0 Fundamental Frequency
3 P (-j*dbmtow(0)) 8 Power into Rout Load at Fundamental Frequency, complex value
4 Rout 50ohm 1 Output Resistance
5 Delay timestep 6 Transit Time Delay Added to Input Tuning Voltage
6 Harmonics 'list(-0.01, 0.002)' -1 Ratio of Harmonic Voltage to Fundamental Voltage, complex value
END_ELEMENT
VCO_DivideByN VCO_DivideByN 6
1 VCO_Freq '(10MHz * _v1)' 0 Frequency Deviation from F0, (function of _v1)
2 F0 1GHz 0 VCO Center Frequency
3 N 10 -1 Nominal Divide Number (with dN = 0)
4 Rout 50ohm 1 Output Resistance of VCO
5 Power (dbmtow(0)) 8 Output Power into Rout Load
6 Delay 50nsec 6 Transit Time Delay Added to Input Tuning Voltage
END_ELEMENT
VCVS VCVS 5
1 G 1 -1 Complex voltage gain, e.g. polar(10, 45), or P(j*omega)/Q(j*omega)
2 T 1.0nsec 6 Time delay
3 R1 1e100ohm 1 Input Resistance
4 R2 0ohm 1 Output Resistance
5 F 0.0GHz 0 Frequency at which G magnitude is down 3 dB
END_ELEMENT
VCVS_Z VCVS_Z 4
1 Gain 1 -1 Constant gain term
2 Num 1 -1 Numerator coefficients of transfer function
3 Den list(1,sqrt(2),1) -1 Denominator coefficients of transfer function
4 TimeStep timestep 6 Sampling time period
END_ELEMENT
VIA VIA 8
1 D1 15.0mils 5 Diameter at pin n1
2 D2 10.0mils 5 Diameter at pin n2
3 H 25.0mils 5 Substrate thickness
4 T 0.15mils 5 Conductor thickness
5 W 10.0mils 5 (for Layout option) Width of conductor attached to via hole
6 Cond1Layer cond -1 (for Layout option) Layer on which the bottom transitional metal is drawn
7 HoleLayer hole -1 (for Layout option) Layer on which the via-hole is drawn
8 Cond2Layer cond2 -1 (for Layout option) Layer on which the top transitional metal is drawn
END_ELEMENT
VIA2 VIA2 9
1 D 15.0mils 5 Hole diameter
2 H 25.0mils 5 Substrate thickness
3 T 0.15mils 5 Metal thickness
4 Rho 1.0 -1 Metal resistivity (relative to gold)
5 W 25.0mils 5 Width of the via pad (assumed square)
6 Temp '' 12 Physical temperature
7 Cond1Layer cond -1 (for Layout option) Layer on which the bottom transitional metal is drawn
8 HoleLayer hole -1 (for Layout option) Layer on which the via-hole is drawn
9 Cond2Layer cond2 -1 (for Layout option) Layer on which the top transitional metal is drawn
END_ELEMENT
VIAGND VIAGND 10
1 Subst MSub1 -1 Substrate instance name
2 D 15.0mils 5 Hole diameter
3 T 0.15mils 5 Metal thickness
4 Rho 1.0 -1 Metal resistivity (relative to gold)
5 W 25.0mils 5 Width of the via pad (assumed square)
6 Temp '' 12 Physical temperature
7 Cond1Layer cond -1 (for Layout option) Layer on which the bottom transitional metal is drawn
8 HoleLayer hole -1 (for Layout option) Layer on which the via-hole is drawn
9 PO 0m 5 Pad offset from connection pin
10 Pad '' -1 Pad Shape
END_ELEMENT
VIAHS VIAHS 12
1 D 15.0mils 5 Diameter of via hole
2 ViaType Blind -1 Type of Via Drill Hole (Blind or ThruHole)
3 H 25.0mils 5 Substrate thickness
4 T 0.15mils 5 Conductor thickness
5 Dpad1 25.0mils 5 (for Layout option) Width of via pad at pin 1
6 Dpad2 20.0mils 5 (for Layout option) Width of via pad at pin 2
7 Angle 90.0deg 7 (for Layout option) Angle betwen via pads
8 Cond1Layer cond -1 (for Layout option) Layer on which the pad at pin 1 is drawn
9 HoleLayer hole -1 (for Layout option) Layer on which the via hole is drawn
10 Cond2Layer cond2 -1 (for Layout option) Layer on which the pad at pin 2 is drawn
11 StartLayer cond -1 (for Layout option) Start Layer for a Blind Via
12 StopLayer cond2 -1 (for Layout option) Stop Layer for a Blind Via
END_ELEMENT
VIASC VIASC 12
1 D 15.0mils 5 Diameter of via hole
2 ViaType Blind -1 Type of Via Drill Hole (Blind or ThruHole)
3 H 25.0mils 5 Substrate thickness
4 T 0.15mils 5 Conductor thickness
5 Dpad1 25.0mils 5 (for Layout option) Diameter of via pad at pin 1
6 Dpad2 20.0mils 5 (for Layout option) Diameter of via pad at pin 2
7 Angle 90.0deg 7 (for Layout option) Angle betwen via pads
8 Cond1Layer cond -1 (for Layout option) Layer on which the pad at pin 1 is drawn
9 HoleLayer hole -1 (for Layout option) Layer on which the via hole is drawn
10 Cond2Layer cond2 -1 (for Layout option) Layer on which the pad at pin 2 is drawn
11 StartLayer cond -1 (for Layout option) Start Layer for a Blind Via
12 StopLayer cond2 -1 (for Layout option) Stop Layer for a Blind Via
END_ELEMENT
VIAFC VIAFC 12
1 D 15.0mils 5 Diameter of via hole
2 ViaType Blind -1 Type of Via Drill Hole (Blind or ThruHole)
3 H 25.0mils 5 Substrate thickness
4 T 0.15mils 5 Conductor thickness
5 Dpad1 25.0mils 5 (for Layout option) Diameter of via pad at pin 1
6 Dpad2 20.0mils 5 (for Layout option) Diameter of via pad at pin 2
7 Angle 0.0deg 7 (for Layout option) Angle betwen via pads
8 Cond1Layer cond -1 (for Layout option) Layer on which the pad at pin 1 is drawn
9 HoleLayer hole -1 (for Layout option) Layer on which the via hole is drawn
10 Cond2Layer cond2 -1 (for Layout option) Layer on which the pad at pin 2 is drawn
11 StartLayer cond -1 (for Layout option) Start Layer for a Blind Via
12 StopLayer cond2 -1 (for Layout option) Stop Layer for a Blind Via
END_ELEMENT
VIAQC VIAQC 14
1 D 15.0mils 5 Diameter of via hole
2 ViaType Blind -1 Type of Via Drill Hole (Blind or ThruHole)
3 H 25.0mils 5 Substrate thickness
4 T 0.15mils 5 Conductor thickness
5 Dpad1 25.0mils 5 (for Layout option) Diameter of via pad at pin 1
6 Dpad2 20.0mils 5 (for Layout option) Diameter of via pad at pin 2
7 Angle 90.0deg 7 (for Layout option) Angle betwen via pads
8 W1 15.0mils 5 (for Layout option) Width of transmission line connected to pin 1
9 W2 15.0mils 5 (for Layout option) Width of transmission line connected to pin 2
10 Cond1Layer cond -1 (for Layout option) Layer on which the pad at pin 1 is drawn
11 HoleLayer hole -1 (for Layout option) Layer on which the via hole is drawn
12 Cond2Layer cond2 -1 (for Layout option) Layer on which the pad at pin 2 is drawn
13 StartLayer cond -1 (for Layout option) Start Layer for a Blind Via
14 StopLayer cond2 -1 (for Layout option) Stop Layer for a Blind Via
END_ELEMENT
VIASTD VIASTD 16
1 D 15.0mils 5 Diameter of via hole
2 ViaType Blind -1 Type of Via Drill Hole (Blind or ThruHole)
3 H 25.0mils 5 Substrate thickness
4 T 0.15mils 5 Conductor thickness
5 Dpad1 25.0mils 5 (for Layout option) Diameter of via pad at pin 1
6 Dpad2 20.0mils 5 (for Layout option) Diameter of via pad at pin 2
7 Angle 90.0deg 7 (for Layout option) Angle betwen via pads
8 W1 15.0mils 5 (for Layout option) Width of transmission line connected to pin 1
9 W2 15.0mils 5 (for Layout option) Width of transmission line connected to pin 2
10 L1 30.0mils 5 (For Layout option) Length of tear drop of pad at pin 1
11 L2 30.0mils 5 (For Layout option) Length of tear drop of pad at pin 2
12 Cond1Layer cond -1 (for Layout option) Layer on which the pad at pin 1 is drawn
13 HoleLayer hole -1 (for Layout option) Layer on which the via hole is drawn
14 Cond2Layer cond2 -1 (for Layout option) Layer on which the pad at pin 2 is drawn
15 StartLayer cond -1 (for Layout option) Start Layer for a Blind Via
16 StopLayer cond2 -1 (for Layout option) Stop Layer for a Blind Via
END_ELEMENT
VIATTD VIATTD 16
1 D 15.0mils 5 Diameter of via hole
2 ViaType Blind -1 Type of Via Drill Hole (Blind or ThruHole)
3 H 25.0mils 5 Substrate thickness
4 T 0.15mils 5 Conductor thickness
5 Dpad1 25.0mils 5 (for Layout option) Diameter of via pad at pin 1
6 Dpad2 20.0mils 5 (for Layout option) Diameter of via pad at pin 2
7 Angle 90.0deg 7 (for Layout option) Angle betwen via pads
8 W1 15.0mils 5 (for Layout option) Width of transmission line connected to pin 1
9 W2 15.0mils 5 (for Layout option) Width of transmission line connected to pin 2
10 L1 30.0mils 5 (For Layout option) Length of tear drop of pad at pin 1
11 L2 30.0mils 5 (For Layout option) Length of tear drop of pad at pin 2
12 Cond1Layer cond -1 (for Layout option) Layer on which the pad at pin 1 is drawn
13 HoleLayer hole -1 (for Layout option) Layer on which the hole is drawn
14 Cond2Layer cond2 -1 (for Layout option) Layer on which the pad at pin 2 is drawn
15 StartLayer cond -1 (for Layout option) Start Layer for a Blind Via
16 StopLayer cond2 -1 (for Layout option) Stop Layer for a Blind Via
END_ELEMENT
VMult VMult 3
1 R1 50.ohm 1 Reference Resistance for Port1
2 R2 50.ohm 1 Reference Resistance for Port2
3 R3 50.ohm 1 Reference Resistance for Port3
END_ELEMENT
VSWR VSWR 1
1 Function list(our_vswr=vswr(S11)) -1 vswr(reflection_coeff)
END_ELEMENT
VSum VSum 0
END_ELEMENT
V_1Tone V_1Tone 8
1 V 1V 9 Voltage at center frequency, use polar() for phase
2 Freq 1GHz 0 Center frequency
3 V_USB '' 9 Voltager of upper sideband small signal tone, use polar() for phase
4 V_LSB '' 9 Voltage of lower sideband small-signal tone, use polar() for phase
5 Vdc '' 9 DC voltage
6 Vac 1V 9 AC voltage, use polar() for phase
7 SaveCurrent y_n1 -1 Flag to save branch current
8 FundIndex '' -1 Fundamental Frequency Index (Can Be Used Instead of Specifying Freq")
END_ELEMENT
V_AC V_AC 4
1 Vdc 0.0V 9 DC voltage
2 Vac 1.0V 9 AC voltage, use polar() for phase
3 Freq freq 0 Frequency
4 SaveCurrent y_n1 -1 Flag to save branch current
END_ELEMENT
V_DC V_DC 3
1 Vdc 1.0V 9 DC voltage
2 Vac '' 9 AC voltage, use polar() for phase
3 SaveCurrent y_n1 -1 Flag to save branch current
END_ELEMENT
V_Noise V_Noise 2
1 V_Noise 1uV 9 Noise voltage amplitude
2 SaveCurrent y_n1 -1 Flag to save branch current
END_ELEMENT
V_NoiseBD V_NoiseBD 7
1 K '' -1 Multiplicative Constant
2 Ie '' -1 DC Bias Current Exponent
3 A0 '' -1 Additive Constant in the Denominator
4 A1 '' -1 Multiplication Factor for the Frequency
5 Fe '' -1 Frequency Exponent
6 Elem '' -1 ID of an element such as R, FET, BJT
7 Pin '' -1 Element Pin Number or Name
END_ELEMENT
V_SpectrumDataset V_SpectrumDataset 4
1 Dataset '' -1 Dataset name
2 Expression '' -1 Dataset variable or expression
3 Freq 1GHz 0 Fundamental frequency
4 SaveCurrent y_n1 -1 Flag to save branch current
END_ELEMENT
V_nHarm V_nHarm 6
1 Freq 1GHz 0 Fundamental frequency
2 V 1V 9 N-th harmonic amplitude (use Add for more harmonics), use polar() for phase
3 Vdc 0V 9 DC Voltage
4 Vac 1V 9 AC voltage, use polar() for phase
5 SaveCurrent y_n1 -1 Flag to save branch current
6 FundIndex '' -1 Fundamental Frequency Index (Can Be Used Instead of Specifying Freq")
END_ELEMENT
V_nTone V_nTone 5
1 Freq 1GHz 0 N-th frequency tone (use Add for more tones)
2 V 1V 9 Corresponding N-th tone amplitude, (use Add for more amplitudes), use polar() for phase
3 Vdc 0V 9 DC Voltage
4 Vac 1V 9 AC voltage, use polar() for phase
5 SaveCurrent y_n1 -1 Flag to save branch current
END_ELEMENT
Vcor Vcor 1
1 Function list(our_vcor=vcor(icor,PortZ)) -1 vcor(current_correlation, port_imped)
END_ELEMENT
Vf_Pulse Vf_Pulse 10
1 Vpeak 1V 9 Peak amplitude
2 Vdc 0V 9 DC offset
3 Freq 1GHz 0 Frequency
4 Width 0.3nsec 6 Pulse width
5 Rise 0.1nsec 6 Rise time
6 Fall 0.1nsec 6 Fall time
7 Delay 0nsec 6 Time delay
8 Weight y_n0 -1 Gibbs Phenomenon
9 Harmonics 16 -1 Number of harmonics
10 SaveCurrent y_n1 -1 Flag to save branch current
END_ELEMENT
Vf_Sawtooth Vf_Sawtooth 7
1 Vpeak 1V 9 Peak amplitude
2 Vdc 0V 9 DC component
3 Freq 1GHz 0 Frequency
4 Delay 0nsec 6 Time delay
5 Weight y_n0 -1 Gibbs Phenomenon
6 Harmonics 16 -1 Number of harmonics
7 SaveCurrent y_n1 -1 Flag to save branch current
END_ELEMENT
Vf_Square Vf_Square 9
1 Vpeak 1V 9 Peak amplitude
2 Vdc 0V 9 DC component
3 Freq 1GHz 0 Frequency
4 Rise 0.1nsec 6 Rise time
5 Fall 0.1nsec 6 Fall time
6 Delay 0nsec 6 Time delay
7 Weight y_n0 -1 Gibbs Phenomenon
8 Harmonics 16 -1 Number of harmonics
9 SaveCurrent y_n1 -1 Flag to save branch current
END_ELEMENT
Vf_Triangle Vf_Triangle 6
1 Vpeak 1V 9 Peak amplitude
2 Vdc 0V 9 DC component
3 Freq 1GHz 0 Frequency
4 Delay 0nsec 6 Time delay
5 Harmonics 16 -1 Number of harmonics
6 SaveCurrent y_n1 -1 Flag to save branch current
END_ELEMENT
Vfc Vfc 1
1 Function list(our_vfc=vfc(vout,0,{1,0})) -1 vfc(positive_voltage,negative_voltage,desired_harm_freq)
END_ELEMENT
VfcTran VfcTran 1
1 Function list(our_vfct=vfc_tran(vout,0,1GHz,1)) -1 vfc_tran(positive_voltage,negative_voltage,fund_freq,num_of_harm)
END_ELEMENT
VoltGain VoltGain 1
1 Function list(our_vgain=volt_gain(S21,PortZ1,PortZ2)) -1 volt_gain(complex_transmission_coeff, input_port_imped, output_port_imped)
END_ELEMENT
Vspec Vspec 1
1 Function 'list(our_vspec=vout - 0)' -1 positive_voltage - negative_voltage
END_ELEMENT
VspecTran VspecTran 1
1 Function list(our_vspect=vspec_tran(vout,0,1GHz,8)) -1 vspec_tran(positive_voltage,negative_voltage,fund_freq,num_of_harm)
END_ELEMENT
Vt Vt 1
1 Function list(our_vt=vt(vout,0,0,10nsec,201)) -1 vt(positive_voltage,negative_voltage,tmin,tmax,num_of_pts)
END_ELEMENT
VtBitSeq VtBitSeq 8
1 Vlow 0V 9 Miminium voltage level
2 Vhigh 5V 9 Maximum voltage level
3 Rate 50MHz 0 Bit Rate
4 Rise 1nsec 6 Rise time of pulse
5 Fall 1nsec 6 Fall time of pulse
6 BitSeq 101010 -1 Bit squence
7 BW '' 0 Bandwidth
8 SaveCurrent y_n1 -1 Flag to save branch current
END_ELEMENT
VtDataset VtDataset 10
1 Dataset '' -1 Dataset name
2 Expression '' -1 Dataset variable or expression
3 Freq 0GHz 0 Carrier frequency
4 Gain 1.0 -1 Gain to apply to dataset values; may be complex and time varying
5 Tmax '' 6 Maximum dataset time to use
6 Toffset '' 6 Initial dataset time offset
7 Tscale '' -1 Time speed-up scaling factor
8 Vdc 0V 9 DC offset voltage
9 Interpolation 0 -1 Interpolation method
10 SaveCurrent y_n1 -1 Flag to save branch current
END_ELEMENT
VtExp VtExp 7
1 Vlow 0V 9 Initial voltage
2 Vhigh 1V 9 Pulse voltage
3 Delay1 0nsec 6 Rise delay time
4 Tau1 1nsec 6 Rise time constant
5 Delay2 1nsec 6 Fall delay time
6 Tau2 1nsec 6 Fall time constant
7 SaveCurrent y_n1 -1 Flag to save branch current
END_ELEMENT
VtImpulseDT VtImpulseDT 5
1 Vlow 0V 9 Miminium voltage level
2 Vhigh 1V 9 Maximum voltage level
3 Period 100nsec 6 Time between repetitive impulses
4 Delay 0nsec 6 Time delay before first impulse
5 Rout 1ohm 1 Output resistance
END_ELEMENT
VtLFSR_DT VtLFSR_DT 7
1 Vlow 0V 9 Miminium voltage level
2 Vhigh 1V 9 Maximum voltage level
3 Rate 24.3KHz 0 Bit Rate
4 Delay 0nsec 6 Initial time delay to first transition
5 Taps bin("10000000000000100") -1 Bits used to generate feedback
6 Seed bin("10101010101010101") -1 Initial value loaded into the shift register
7 Rout 1ohm 1 Output resistance
END_ELEMENT
VtOneShot VtOneShot 3
1 Delay (timestep) 6 Time delay from trigger until pulse starts
2 Width (5*timestep) 6 Pulse width
3 Vhigh 5V 9 Pulse voltage
END_ELEMENT
VtPWL VtPWL 2
1 V_Tran '(pwl(time, 0ns,0V, 10ns,1V, 20ns,0V))' 9 pwl(time, time-voltage pairs), or pwlr(time, Ncycles, time-voltage pairs)
2 SaveCurrent y_n1 -1 Flag to save branch current
END_ELEMENT
VtPulse VtPulse 9
1 Vlow 0V 9 Initial voltage
2 Vhigh 1V 9 Pulse voltage
3 Delay 0nsec 6 Time delay
4 Edge linear -1 Rising and falling edge type
5 Rise 1nsec 6 Rise time
6 Fall 1nsec 6 Fall time
7 Width 3nsec 6 Pulse width
8 Period 10nsec 6 Fall time
9 SaveCurrent y_n1 -1 Flag to save branch current
END_ELEMENT
VtPulseDT VtPulseDT 6
1 Vlow 0V 9 Initial voltage
2 Vhigh 1V 9 Pulse voltage
3 Delay 0nsec 6 Time delay
4 Width 3nsec 6 Pulse width
5 Period 10nsec 6 Fall time
6 Rout 1ohm 1 Output resistance
END_ELEMENT
VtRF_Pulse VtRF_Pulse 13
1 Freq 1GHz 0 RF carrier frequency
2 Vpeak (dbmtov(0,50)) 9 Voltage envelope of pulse
3 OffRatio 0 -1 Linear amplitude ratio of OFF to ON portions of pulse
4 Delay 0nsec 6 Time delay before first pulse
5 Rise 1nsec 6 Rise time of pulse
6 Fall 1nsec 6 Fall time of pulse
7 Width 3nsec 6 Width of constant portion of pulse
8 Period 100nsec 6 Pulse repetition period
9 Chirp 0Hz 0 Linear frequency modulation during pulse
10 Phase0 0deg 7 Initial phase of pulse carrier
11 Vdc '' 9 DC voltage
12 Vac 1V 9 AC voltage
13 SaveCurrent y_n1 -1 Flag to save branch current
END_ELEMENT
VtRF_Step VtRF_Step 7
1 Freq 1GHz 0 RF Frequency
2 V (polar(1,90)) 9 Voltage envelope of step
3 Delay 0nsec 6 Time delay before step
4 Rise 0nsec 6 Rise time of step
5 Vdc '' 9 DC voltage
6 Vac 1V 9 AC voltage
7 SaveCurrent y_n1 -1 Flag to save branch current
END_ELEMENT
VtRetrig VtRetrig 3
1 V (step(1us-(time-_tt(1)))) 9 User-defined waveform equation
2 Rout 1ohm 1 Output resistance
3 Thresh 0.5V 9 Trigger threshold on rising edge
END_ELEMENT
VtSFFM VtSFFM 6
1 Vdc 0V 9 Initial voltage offset
2 Amplitude 1V 9 Amplitude of signal
3 CarrierFreq 1GHz 0 Carrier Frequency
4 ModIndex 0.5 -1 Modulation Index
5 SignalFreq 1MHz 0 Signal Frequency
6 SaveCurrent y_n1 -1 Flag to save branch current
END_ELEMENT
VtSine VtSine 7
1 Vdc 0V 9 Initial voltage offset
2 Amplitude 1V 9 Amplitude of sinusoidal wave
3 Freq 1GHz 0 Frequency of sinusoidal wave
4 Delay 0nsec 6 Time Delay
5 Damping 0 -1 Damping factor
6 Phase 0deg 7 Phase value
7 SaveCurrent y_n1 -1 Flag to save branch current
END_ELEMENT
VtStep VtStep 5
1 Vlow 0V 9 Initial voltage
2 Vhigh 1V 9 Pulse voltage
3 Delay 0nsec 6 Time delay
4 Rise 1nsec 6 Rise time
5 SaveCurrent y_n1 -1 Flag to save branch current
END_ELEMENT
VtTran VtTran 1
1 Function list(our_vtt=vt_tran(vout,0)) -1 vt_tran(positive_voltage,negative_voltage)
END_ELEMENT
VtUserDef VtUserDef 4
1 V_Tran damped_sin(time) -1 Transient voltage
2 Vdc '' 9 DC voltage
3 Vac 1V 9 AC voltage
4 SaveCurrent y_n1 -1 Flag to save branch current
END_ELEMENT
WIRE WIRE 9
1 D 1.0mils 5 Wire diameter
2 L 50.0mils 5 Wire length
3 Rho 1.0 -1 Metal resistivity (relative to gold)
4 Temp '' 12 Physical temperature
5 AF 0.5 -1 (for Layout option) Arc factor;ratio of distance between two pins to wire length
6 CO 5.0mils 5 (for Layout option) Conductor offset; distance from edge of conductor
7 A1 30.0deg 7 (for Layout option) Angle of departure from first pin
8 A2 30.0deg 7 (for Layout option) Angle between direction of first and second pins
9 BondLayer smt_bond -1 (for Layout option) Layer on which the ribbon is drawn
END_ELEMENT
WaveformStats WaveformStats 0
END_ELEMENT
X9TO1COR X9TO1COR 12
1 Z 50.0ohm 1 Characteristic impedance of transmission line
2 Len 10.0mils 5 Physical length of transmission line
3 K 2.0 -1 Effective dielectric constant for transmission lines
4 A 0.0 -1 Attenuation (dB / unit length)
5 F 1.0GHz 0 Frequency for scaling attenuation
6 N 1.0 -1 Number of turns
7 AL 1.0nH 3 Inductance index
8 TanD 0 -1 Dielectric loss tangent
9 Mur 1 -1 Relative permeability
10 TanM 0 -1 Permeability
11 Sigma 0 -1 Dielectric conductivity
12 Temp '' 12 Physical temperature
END_ELEMENT
X9TO1SLV X9TO1SLV 12
1 Z 50.0ohm 1 Characteristic impedance of transmission line
2 Len 10.0mils 5 Physical length of transmission line
3 K 2.0 -1 Effective dielectric constant for transmission lines
4 A 0.0 -1 Attenuation (dB / unit length)
5 F 1.0GHz 0 Frequency for scaling attenuation
6 Mu 1.0 -1 Relative permeability of surrounding sleeve
7 L 1.0nH 3 Inductance index (per unit length) without ferrite sleeves
8 TanD 0 -1 Dielectric loss tangent
9 Mur 1 -1 Relative permeability
10 TanM 0 -1 Permeability
11 Sigma 0 -1 Dielectric conductivity
12 Temp '' 12 Physical temperature
END_ELEMENT
X9TO4COR X9TO4COR 12
1 Z 50.0ohm 1 Characteristic impedance of transmission line
2 Len 10.0mils 5 Physical length of transmission line
3 K 2.0 -1 Effective dielectric constant for transmission lines
4 A 0.0 -1 Attenuation (dB / unit length)
5 F 1.0GHz 0 Frequency for scaling attenuation
6 N 1.0 -1 Number of turns
7 AL 1.0nH 3 Inductance index
8 TanD 0 -1 Dielectric loss tangent
9 Mur 1 -1 Relative permeability
10 TanM 0 -1 Permeability
11 Sigma 0 -1 Dielectric conductivity
12 Temp '' 12 Physical temperature
END_ELEMENT
X9TO4SLV X9TO4SLV 12
1 Z 50.0ohm 1 Characteristic impedance of transmission line
2 Len 10.0mils 5 Physical length of transmission line
3 K 2.0 -1 Effective dielectric constant for transmission lines
4 A 0.0 -1 Attenuation (dB / unit length)
5 F 1.0GHz 0 Frequency for scaling attenuation
6 Mu 1.0 -1 Relative permeability of surrounding sleeve
7 L 1.0nH 3 Inductance index (per unit length) without ferrite sleeves
8 TanD 0 -1 Dielectric loss tangent
9 Mur 1 -1 Relative permeability
10 TanM 0 -1 Permeability
11 Sigma 0 -1 Dielectric conductivity
12 Temp '' 12 Physical temperature
END_ELEMENT
XDB XDB 65
1 MaxOrder 4 -1 Maximum combined order to be considered
2 Freq 1.0GHz 0 Frequency of fundamental
3 Order 3 -1 Maximum order of fundamental to be considered
4 NestLevel 2 -1 Levels of subcircuits to output
5 StatusLevel 2 -1 Degree of annotation
6 FundOversample 1 -1 Oversampling ratio for FFT
7 Oversample '' -1 Oversampling ratio for FFT (repeated)
8 PackFFT '' -1 Pack FFT in multi-tone analysis
9 MaxIters 10 -1 Max number of iterations
10 GuardThresh '' -1 Guard threshold
11 SamanskiiConstant 2 -1 Samanskii constant
12 Restart no -1 Do not use last solution as initial guess
13 ArcLevelMaxStep 0.0 -1 Maximum arc-length step for source-level continuation
14 MaxStepRatio 100 -1 Ratio of maximum to given number of steps
15 MaxShrinkage 1.0e-5 -1 Maximum step shrinkage
16 OutputAllSolns '' -1 Output spectra at all computed steps when sweeping
17 ArcMaxStep 0.0 -1 Maximum arc-length step
18 ArcMinValue '' -1 Minimum value for parameter during arclength continuation
19 ArcMaxValue '' -1 Maximum value for parameter during arclength continuation
20 SS_Thresh '' -1 Small signal spectral threshold
21 UseAllSS_Freqs '' -1 Solve for all small signal mixer sidebands (requires more memory)
22 InputFreq '' -1 Input frequency for desired SSB mixing term
23 NLNoiseMode '' -1 Flag to indicate nonlinear noise mode
24 NLNoiseUseSweepPlan '' -1 Flag to indicate use of SweepPlan
25 NoiseFreqPlan '' -1 Instance/path name for noise sweep values
26 NLNoiseStart 1.0GHz 0 start frequency
27 NLNoiseStop 10.0GHz 0 stop frequency
28 NLNoiseStep 1.0GHz 0 step frequency
29 NLNoiseCenter '' 0 center frequency
30 NLNoiseSpan '' 0 span
31 NLNoiseLin '' -1 linear sweep
32 NLNoiseDec '' -1 number of points per decade
33 NLNoiseLog '' -1 log sweep
34 NLNoiseReverse '' -1 reverse sweep
35 NLNoisePt '' -1 single frequency
36 NLNoiseSort 'LINEAR START STEP' -1 sort frequencies
37 FreqForNoise '' 0 Noise frequency for spectral noise analysis
38 NoiseNode '' -1 Nodename to compute noise voltage (repeatable)
39 SortNoise NoiseSortOff -1 Sort Noise Contribution by: Value/1, Name/2 (default: 0/NoOutput)
40 NoiseThresh '' -1 Noise Contribution Threshold
41 IncludePortNoise '' -1 Include port noise in noise voltage and currents
42 NoisyTwoPort '' -1 Compute noisy two-port parameters: sopt, rn, & nfmin
43 BandwidthForNoise '' 0 Bandwidth for spectral noise analysis
44 UseKrylov '' -1 Use Krylov solver
45 UseInitialAWHB '' -1 Use initial AWHB stage before Krylov
46 AWHB_WindowSize '' -1 AWHB window size
47 GMRES_Restart '' -1 GMRES iterations before auto-restart
48 KrylovUsePacking '' -1 Use Krylov spectral packing
49 KrylovPackingThresh '' -1 Krylov bandwidth threshold
50 KrylovTightTol '' -1 GMRES tolerance
51 KrylovLooseTol '' -1 Loose tolerance for Krylov loop
52 KrylovLooseIters '' -1 Min number of iterations to invoke loose tolerance
53 KrylovMaxIters '' -1 Maximum number of GMRES iterations
54 GMRES_Orthog '' -1 Re-orthogonalize at every GMRES iteration
55 GC_XdB 1 -1 Specifies dB of compression to solve for
56 GC_InputPort 1 -1 Input port for XdBgc analysis
57 GC_OutputPort 2 -1 Output port for XdBgc analysis
58 GC_InputFreq 1.0GHz 0 Driving frequency at input port for XdBgc analysis
59 GC_OutputFreq 1.0GHz 0 Driving frequency at output port for XdBgc analysis
60 GC_InputPowerTol 1e-3 -1 Input power tolerance for XdBgc analysis
61 GC_OutputPowerTol 1e-3 -1 Output power tolerance for XdBgc analysis
62 GC_MaxInputPower 100 -1 Max input power (in dBm) for XdBgc analysis
63 DoGainComp Yes -1 Do gain compression flag
64 OutputBudgetIV '' -1 Output top-level pin currents and voltages
65 Other '' -1 Output string to netlist
END_ELEMENT
XFERP XFERP 9
1 N 1.0 -1 Turns Ratio, N1/N2
2 Lp 200.0nH 3 Magnetizing Inductance
3 Rc 1000.0ohm 1 Core Loss Resistance
4 K 0.9 -1 Coefficient of Coupling
5 R1 5.0ohm 1 Primary Loss Resistance
6 R2 5.0ohm 1 Secondary Loss Resistance
7 C1 25.0uF 4 Primary Capacitance
8 C2 25.0uF 4 Secondary Capacitance
9 C 0.1uF 4 Interwinding Capacitance
END_ELEMENT
XFERRUTH XFERRUTH 5
1 N 1.0 -1 Turns Ratio, N1/N2
2 AL 1.0nH 3 Inductance index
3 Z 50.0ohm 1 Characteristic Impedance of Transmission Line
4 E 10.0mils 5 Electrical Length of Transmission Line
5 F 1.0MHz 0 Reference Frequency for Electrical Length
END_ELEMENT
XFERTAP XFERTAP 4
1 N12 1.414 -1 Turns Ratio, N1/N2
2 N13 1.414 -1 Turns Ratio, N1/N3
3 L1 400.0nH 3 Primary Winding Inductance
4 K 0.9 -1 Coupling Coefficient
END_ELEMENT
XFERTL1 XFERTL1 13
1 Z 50.0ohm 1 Characteristic impedance of transmission line
2 Len 12.0mils 5 Physical length of transmission line
3 K 2.0 -1 Effective dielectric constant of transmission line
4 A 0.0 -1 Attenuation of transmission line, dB per unit length
5 F 1.0GHz 0 Frequency for scaling attenuation
6 N 5.0 -1 Number of turns
7 AL 960.0nH 3 Inductance index
8 Order 1 -1 Number of transmission lines
9 TanD 0 -1 Dielectric loss tangent
10 Mur 1 -1 Relative permeability
11 TanM 0 -1 Permeability
12 Sigma 0 -1 Dielectric conductivity
13 Temp '' 12 Physical temperature
END_ELEMENT
XFERTL2 XFERTL2 13
1 Z 50.0ohm 1 Characteristic impedance of transmission line
2 Len 12.0mils 5 Physical length of transmission line
3 K 2.0 -1 Effective dielectric constant of transmission line
4 A 0.0 -1 Attenuation of transmission line, dB per unit length
5 F 1.0GHz 0 Frequency for scaling attenuation
6 Mu 100.0 -1 Relative permeability of surrounding sleeve
7 L 20.0nH 3 Inductance (per unit length) of the line without the sleeve
8 Order 1 -1 Number of transmission lines
9 TanD 0 -1 Dielectric loss tangent
10 Mur 1 -1 Relative permeability
11 TanM 0 -1 Permeability
12 Sigma 0 -1 Dielectric conductivity
13 Temp '' 12 Physical temperature
END_ELEMENT
XTAL1 XTAL1 5
1 C 9.1189fF 4 Motional capacitance
2 L 10.0mH 3 Motional inductance
3 R 15.9ohm 1 Motional resistance
4 Cp 0.4537pF 4 Static capacitance
5 OT i3 -1 Overtone number
END_ELEMENT
XTAL2 XTAL2 5
1 C 9.1189fF 4 Motional capacitance
2 F 50.0MHz 0 Resonant frequency
3 Q 65862.0 -1 Unloaded Q
4 Cp 0.4537pF 4 Static capacitance
5 OT i3 -1 Overtone number
END_ELEMENT
Y1P_Eqn Y1P_Eqn 9
1 Y[1,1] '' -1 Y-parameter
2 ImpNoncausalLength '' -1 Non-causal function impulse response order
3 ImpMode '' -1 Convolution mode
4 ImpMaxFreq '' 0 Maximum Frequency to which device is evaluated
5 ImpDeltaFreq '' 0 Sample spacing in frequency
6 ImpMaxOrder '' -1 Maximum allowed impulse response order
7 ImpWindow '' -1 Smoothing window
8 ImpRelTol '' -1 Relative impulse response truncation factor
9 ImpAbsTol '' -1 Absolute impulse response truncation factor
END_ELEMENT
Y2P_Eqn Y2P_Eqn 13
1 Y[1,1] '' -1 Y-parameter
2 Y[1,2] '' -1 Y-parameter
3 Y[2,1] '' -1 Y-parameter
4 Y[2,2] '' -1 Y-parameter
5 Recip No -1 Port is reciprocal
6 ImpNoncausalLength '' -1 Non-causal function impulse response order
7 ImpMode '' -1 Convolution mode
8 ImpMaxFreq '' 0 Maximum Frequency to which device is evaluated
9 ImpDeltaFreq '' 0 Sample spacing in frequency
10 ImpMaxOrder '' -1 Maximum allowed impulse response order
11 ImpWindow '' -1 Smoothing window
12 ImpRelTol '' -1 Relative impulse response truncation factor
13 ImpAbsTol '' -1 Absolute impulse response truncation factor
END_ELEMENT
Y3P_Eqn Y3P_Eqn 18
1 Y[1,1] '' -1 Y-parameter
2 Y[1,2] '' -1 Y-parameter
3 Y[1,3] '' -1 Y-parameter
4 Y[2,1] '' -1 Y-parameter
5 Y[2,2] '' -1 Y-parameter
6 Y[2,3] '' -1 Y-parameter
7 Y[3,1] '' -1 Y-parameter
8 Y[3,2] '' -1 Y-parameter
9 Y[3,3] '' -1 Y-parameter
10 Recip No -1 Port is reciprocal
11 ImpNoncausalLength '' -1 Non-causal function impulse response order
12 ImpMode '' -1 Convolution mode
13 ImpMaxFreq '' 0 Maximum Frequency to which device is evaluated
14 ImpDeltaFreq '' 0 Sample spacing in frequency
15 ImpMaxOrder '' -1 Maximum allowed impulse response order
16 ImpWindow '' -1 Smoothing window
17 ImpRelTol '' -1 Relative impulse response truncation factor
18 ImpAbsTol '' -1 Absolute impulse response truncation factor
END_ELEMENT
Y4P_Eqn Y4P_Eqn 25
1 Y[1,1] '' -1 Y-parameter
2 Y[1,2] '' -1 Y-parameter
3 Y[1,3] '' -1 Y-parameter
4 Y[1,4] '' -1 Y-parameter
5 Y[2,1] '' -1 Y-parameter
6 Y[2,2] '' -1 Y-parameter
7 Y[2,3] '' -1 Y-parameter
8 Y[2,4] '' -1 Y-parameter
9 Y[3,1] '' -1 Y-parameter
10 Y[3,2] '' -1 Y-parameter
11 Y[3,3] '' -1 Y-parameter
12 Y[3,4] '' -1 Y-parameter
13 Y[4,1] '' -1 Y-parameter
14 Y[4,2] '' -1 Y-parameter
15 Y[4,3] '' -1 Y-parameter
16 Y[4,4] '' -1 Y-parameter
17 Recip No -1 Port is reciprocal
18 ImpNoncausalLength '' -1 Non-causal function impulse response order
19 ImpMode '' -1 Convolution mode
20 ImpMaxFreq '' 0 Maximum Frequency to which device is evaluated
21 ImpDeltaFreq '' 0 Sample spacing in frequency
22 ImpMaxOrder '' -1 Maximum allowed impulse response order
23 ImpWindow '' -1 Smoothing window
24 ImpRelTol '' -1 Relative impulse response truncation factor
25 ImpAbsTol '' -1 Absolute impulse response truncation factor
END_ELEMENT
Y5P_Eqn Y5P_Eqn 34
1 Y[1,1] '' -1 Y-parameter
2 Y[1,2] '' -1 Y-parameter
3 Y[1,3] '' -1 Y-parameter
4 Y[1,4] '' -1 Y-parameter
5 Y[1,5] '' -1 Y-parameter
6 Y[2,1] '' -1 Y-parameter
7 Y[2,2] '' -1 Y-parameter
8 Y[2,3] '' -1 Y-parameter
9 Y[2,4] '' -1 Y-parameter
10 Y[2,5] '' -1 Y-parameter
11 Y[3,1] '' -1 Y-parameter
12 Y[3,2] '' -1 Y-parameter
13 Y[3,3] '' -1 Y-parameter
14 Y[3,4] '' -1 Y-parameter
15 Y[3,5] '' -1 Y-parameter
16 Y[4,1] '' -1 Y-parameter
17 Y[4,2] '' -1 Y-parameter
18 Y[4,3] '' -1 Y-parameter
19 Y[4,4] '' -1 Y-parameter
20 Y[4,5] '' -1 Y-parameter
21 Y[5,1] '' -1 Y-parameter
22 Y[5,2] '' -1 Y-parameter
23 Y[5,3] '' -1 Y-parameter
24 Y[5,4] '' -1 Y-parameter
25 Y[5,5] '' -1 Y-parameter
26 Recip No -1 Port is reciprocal
27 ImpNoncausalLength '' -1 Non-causal function impulse response order
28 ImpMode '' -1 Convolution mode
29 ImpMaxFreq '' 0 Maximum Frequency to which device is evaluated
30 ImpDeltaFreq '' 0 Sample spacing in frequency
31 ImpMaxOrder '' -1 Maximum allowed impulse response order
32 ImpWindow '' -1 Smoothing window
33 ImpRelTol '' -1 Relative impulse response truncation factor
34 ImpAbsTol '' -1 Absolute impulse response truncation factor
END_ELEMENT
Y6P_Eqn Y6P_Eqn 45
1 Y[1,1] '' -1 Y-parameter
2 Y[1,2] '' -1 Y-parameter
3 Y[1,3] '' -1 Y-parameter
4 Y[1,4] '' -1 Y-parameter
5 Y[1,5] '' -1 Y-parameter
6 Y[1,6] '' -1 Y-parameter
7 Y[2,1] '' -1 Y-parameter
8 Y[2,2] '' -1 Y-parameter
9 Y[2,3] '' -1 Y-parameter
10 Y[2,4] '' -1 Y-parameter
11 Y[2,5] '' -1 Y-parameter
12 Y[2,6] '' -1 Y-parameter
13 Y[3,1] '' -1 Y-parameter
14 Y[3,2] '' -1 Y-parameter
15 Y[3,3] '' -1 Y-parameter
16 Y[3,4] '' -1 Y-parameter
17 Y[3,5] '' -1 Y-parameter
18 Y[3,6] '' -1 Y-parameter
19 Y[4,1] '' -1 Y-parameter
20 Y[4,2] '' -1 Y-parameter
21 Y[4,3] '' -1 Y-parameter
22 Y[4,4] '' -1 Y-parameter
23 Y[4,5] '' -1 Y-parameter
24 Y[4,6] '' -1 Y-parameter
25 Y[5,1] '' -1 Y-parameter
26 Y[5,2] '' -1 Y-parameter
27 Y[5,3] '' -1 Y-parameter
28 Y[5,4] '' -1 Y-parameter
29 Y[5,5] '' -1 Y-parameter
30 Y[5,6] '' -1 Y-parameter
31 Y[6,1] '' -1 Y-parameter
32 Y[6,2] '' -1 Y-parameter
33 Y[6,3] '' -1 Y-parameter
34 Y[6,4] '' -1 Y-parameter
35 Y[6,5] '' -1 Y-parameter
36 Y[6,6] '' -1 Y-parameter
37 Recip No -1 Port is reciprocal
38 ImpNoncausalLength '' -1 Non-causal function impulse response order
39 ImpMode '' -1 Convolution mode
40 ImpMaxFreq '' 0 Maximum Frequency to which device is evaluated
41 ImpDeltaFreq '' 0 Sample spacing in frequency
42 ImpMaxOrder '' -1 Maximum allowed impulse response order
43 ImpWindow '' -1 Smoothing window
44 ImpRelTol '' -1 Relative impulse response truncation factor
45 ImpAbsTol '' -1 Absolute impulse response truncation factor
END_ELEMENT
Yield Yield 13
1 SimInstanceName '' -1 Simulation component name
2 NumIters 250 -1 Number of Yield Optimization iterations
3 MaxTrials 1000 -1 Maximum number of Monte Carlo trials
4 PPT_Mode none -1 Post production tuning mode
5 ShadowModelType none -1 Type of shadow model to use: none, mfp, or hpsm
6 Seed '' -1 Seed for random number generator
7 SaveSolns Yes -1 Flag to send analysis solutions to dataset
8 SaveRandVars No -1 Send random variables to dataset
9 SaveSpecs No -1 Send yieldspec values to dataset
10 YieldSpecName '' -1 Name of yield_spec to use for yield estimate (repeatable)
11 StatusLevel 2 -1 Degree of annotation
12 Enable Yes -1 Flag to enable controllor
13 RestoreNomValues '' -1 Restores nominal values if controlling optimization
END_ELEMENT
YieldOptim YieldOptim 12
1 SimInstanceName '' -1 Simulation component name
2 NumIters '' -1 Number of Yield Optimization iterations
3 MaxTrials '' -1 Maximum number of Monte Carlo trials
4 PPT_Mode none -1 Post production tuning mode
5 ShadowModelType none -1 Type of shadow model to use: none, mfp, or hpsm
6 Seed '' -1 Seed for random number generator
7 SaveSolns No -1 Flag to send analysis solutions to dataset
8 SaveRandVars No -1 Send random variables to dataset
9 SaveSpecs No -1 Send yieldspec values to dataset
10 YieldSpecName '' -1 Name of yield_spec to use for yield estimate (repeatable)
11 StatusLevel '' -1 Degree of annotation
12 RestoreNomValues '' -1 Restores nominal values if controlling optimization
END_ELEMENT
YieldSpec YieldSpec 9
1 Expr '' -1 Specification expression name
2 SimInstanceName '' -1 Simulation component name
3 Min '' -1 Minimum acceptable spec value
4 Max '' -1 Maximum acceptable spec value
5 Weight '' -1 Weighting used in error function calculation
6 Save '' -1 Send spec value to dataset
7 RangeVar '' -1 Name of range variable
8 RangeMin '' -1 Minimum acceptable value for range variable
9 RangeMax '' -1 Maximum acceptable value for range variable
END_ELEMENT
Yin Yin 1
1 Function list(our_yin=yin(S11,PortZ1)) -1 yin(reflection_coeff, input_port_imped)
END_ELEMENT
Yopt Yopt 1
1 Function list(our_yopt=yopt(Sopt,PortZ1)) -1 yopt(gamma_opt, port_imped)
END_ELEMENT
Z1P_Eqn Z1P_Eqn 10
1 Z[1,1] '' -1 Z-parameter
2 C[1] '' 10 Port 1 controlling current
3 ImpNoncausalLength '' -1 Non-causal function impulse response order
4 ImpMode '' -1 Convolution mode
5 ImpMaxFreq '' 0 Maximum Frequency to which device is evaluated
6 ImpDeltaFreq '' 0 Sample spacing in frequency
7 ImpMaxOrder '' -1 Maximum allowed impulse response order
8 ImpWindow '' -1 Smoothing window
9 ImpRelTol '' -1 Relative impulse response truncation factor
10 ImpAbsTol '' -1 Absolute impulse response truncation factor
END_ELEMENT
Z2P_Eqn Z2P_Eqn 15
1 Z[1,1] '' -1 Z-parameter
2 Z[1,2] '' -1 Z-parameter
3 Z[2,1] '' -1 Z-parameter
4 Z[2,2] '' -1 Z-parameter
5 C[1] '' 10 Port 1 controlling current
6 C[2] '' 10 Port 2 controlling current
7 Recip No -1 Port is reciprocal
8 ImpNoncausalLength '' -1 Non-causal function impulse response order
9 ImpMode '' -1 Convolution mode
10 ImpMaxFreq '' 0 Maximum Frequency to which device is evaluated
11 ImpDeltaFreq '' 0 Sample spacing in frequency
12 ImpMaxOrder '' -1 Maximum allowed impulse response order
13 ImpWindow '' -1 Smoothing window
14 ImpRelTol '' -1 Relative impulse response truncation factor
15 ImpAbsTol '' -1 Absolute impulse response truncation factor
END_ELEMENT
Z3P_Eqn Z3P_Eqn 21
1 Z[1,1] '' -1 Z-parameter
2 Z[1,2] '' -1 Z-parameter
3 Z[1,3] '' -1 Z-parameter
4 Z[2,1] '' -1 Z-parameter
5 Z[2,2] '' -1 Z-parameter
6 Z[2,3] '' -1 Z-parameter
7 Z[3,1] '' -1 Z-parameter
8 Z[3,2] '' -1 Z-parameter
9 Z[3,3] '' -1 Z-parameter
10 C[1] '' 10 Port 1 controlling current
11 C[2] '' 10 Port 2 controlling current
12 C[3] '' 10 Port 3 controlling current
13 Recip No -1 Port is reciprocal
14 ImpNoncausalLength '' -1 Non-causal function impulse response order
15 ImpMode '' -1 Convolution mode
16 ImpMaxFreq '' 0 Maximum Frequency to which device is evaluated
17 ImpDeltaFreq '' 0 Sample spacing in frequency
18 ImpMaxOrder '' -1 Maximum allowed impulse response order
19 ImpWindow '' -1 Smoothing window
20 ImpRelTol '' -1 Relative impulse response truncation factor
21 ImpAbsTol '' -1 Absolute impulse response truncation factor
END_ELEMENT
Z4P_Eqn Z4P_Eqn 29
1 Z[1,1] '' -1 Z-parameter
2 Z[1,2] '' -1 Z-parameter
3 Z[1,3] '' -1 Z-parameter
4 Z[1,4] '' -1 Z-parameter
5 Z[2,1] '' -1 Z-parameter
6 Z[2,2] '' -1 Z-parameter
7 Z[2,3] '' -1 Z-parameter
8 Z[2,4] '' -1 Z-parameter
9 Z[3,1] '' -1 Z-parameter
10 Z[3,2] '' -1 Z-parameter
11 Z[3,3] '' -1 Z-parameter
12 Z[3,4] '' -1 Z-parameter
13 Z[4,1] '' -1 Z-parameter
14 Z[4,2] '' -1 Z-parameter
15 Z[4,3] '' -1 Z-parameter
16 Z[4,4] '' -1 Z-parameter
17 C[1] '' 10 Port 1 controlling current
18 C[2] '' 10 Port 2 controlling current
19 C[3] '' 10 Port 3 controlling current
20 C[4] '' 10 Port 4 controlling current
21 Recip No -1 Port is reciprocal
22 ImpNoncausalLength '' -1 Non-causal function impulse response order
23 ImpMode '' -1 Convolution mode
24 ImpMaxFreq '' 0 Maximum Frequency to which device is evaluated
25 ImpDeltaFreq '' 0 Sample spacing in frequency
26 ImpMaxOrder '' -1 Maximum allowed impulse response order
27 ImpWindow '' -1 Smoothing window
28 ImpRelTol '' -1 Relative impulse response truncation factor
29 ImpAbsTol '' -1 Absolute impulse response truncation factor
END_ELEMENT
Z5P_Eqn Z5P_Eqn 39
1 Z[1,1] '' -1 Z-parameter
2 Z[1,2] '' -1 Z-parameter
3 Z[1,3] '' -1 Z-parameter
4 Z[1,4] '' -1 Z-parameter
5 Z[1,5] '' -1 Z-parameter
6 Z[2,1] '' -1 Z-parameter
7 Z[2,2] '' -1 Z-parameter
8 Z[2,3] '' -1 Z-parameter
9 Z[2,4] '' -1 Z-parameter
10 Z[2,5] '' -1 Z-parameter
11 Z[3,1] '' -1 Z-parameter
12 Z[3,2] '' -1 Z-parameter
13 Z[3,3] '' -1 Z-parameter
14 Z[3,4] '' -1 Z-parameter
15 Z[3,5] '' -1 Z-parameter
16 Z[4,1] '' -1 Z-parameter
17 Z[4,2] '' -1 Z-parameter
18 Z[4,3] '' -1 Z-parameter
19 Z[4,4] '' -1 Z-parameter
20 Z[4,5] '' -1 Z-parameter
21 Z[5,1] '' -1 Z-parameter
22 Z[5,2] '' -1 Z-parameter
23 Z[5,3] '' -1 Z-parameter
24 Z[5,4] '' -1 Z-parameter
25 Z[5,5] '' -1 Z-parameter
26 C[1] '' 10 Port 1 controlling current
27 C[2] '' 10 Port 2 controlling current
28 C[3] '' 10 Port 3 controlling current
29 C[4] '' 10 Port 4 controlling current
30 C[5] '' 10 Port 5 controlling current
31 Recip No -1 Port is reciprocal
32 ImpNoncausalLength '' -1 Non-causal function impulse response order
33 ImpMode '' -1 Convolution mode
34 ImpMaxFreq '' 0 Maximum Frequency to which device is evaluated
35 ImpDeltaFreq '' 0 Sample spacing in frequency
36 ImpMaxOrder '' -1 Maximum allowed impulse response order
37 ImpWindow '' -1 Smoothing window
38 ImpRelTol '' -1 Relative impulse response truncation factor
39 ImpAbsTol '' -1 Absolute impulse response truncation factor
END_ELEMENT
Z6P_Eqn Z6P_Eqn 51
1 Z[1,1] '' -1 Z-parameter
2 Z[1,2] '' -1 Z-parameter
3 Z[1,3] '' -1 Z-parameter
4 Z[1,4] '' -1 Z-parameter
5 Z[1,5] '' -1 Z-parameter
6 Z[1,6] '' -1 Z-parameter
7 Z[2,1] '' -1 Z-parameter
8 Z[2,2] '' -1 Z-parameter
9 Z[2,3] '' -1 Z-parameter
10 Z[2,4] '' -1 Z-parameter
11 Z[2,5] '' -1 Z-parameter
12 Z[2,6] '' -1 Z-parameter
13 Z[3,1] '' -1 Z-parameter
14 Z[3,2] '' -1 Z-parameter
15 Z[3,3] '' -1 Z-parameter
16 Z[3,4] '' -1 Z-parameter
17 Z[3,5] '' -1 Z-parameter
18 Z[3,6] '' -1 Z-parameter
19 Z[4,1] '' -1 Z-parameter
20 Z[4,2] '' -1 Z-parameter
21 Z[4,3] '' -1 Z-parameter
22 Z[4,4] '' -1 Z-parameter
23 Z[4,5] '' -1 Z-parameter
24 Z[4,6] '' -1 Z-parameter
25 Z[5,1] '' -1 Z-parameter
26 Z[5,2] '' -1 Z-parameter
27 Z[5,3] '' -1 Z-parameter
28 Z[5,4] '' -1 Z-parameter
29 Z[5,5] '' -1 Z-parameter
30 Z[5,6] '' -1 Z-parameter
31 Z[6,1] '' -1 Z-parameter
32 Z[6,2] '' -1 Z-parameter
33 Z[6,3] '' -1 Z-parameter
34 Z[6,4] '' -1 Z-parameter
35 Z[6,5] '' -1 Z-parameter
36 Z[6,6] '' -1 Z-parameter
37 C[1] '' 10 Port 1 controlling current
38 C[2] '' 10 Port 2 controlling current
39 C[3] '' 10 Port 3 controlling current
40 C[4] '' 10 Port 4 controlling current
41 C[5] '' 10 Port 5 controlling current
42 C[6] '' 10 Port 6 controlling current
43 Recip No -1 Port is reciprocal
44 ImpNoncausalLength '' -1 Non-causal function impulse response order
45 ImpMode '' -1 Convolution mode
46 ImpMaxFreq '' 0 Maximum Frequency to which device is evaluated
47 ImpDeltaFreq '' 0 Sample spacing in frequency
48 ImpMaxOrder '' -1 Maximum allowed impulse response order
49 ImpWindow '' -1 Smoothing window
50 ImpRelTol '' -1 Relative impulse response truncation factor
51 ImpAbsTol '' -1 Absolute impulse response truncation factor
END_ELEMENT
Zin Zin 1
1 Function list(our_zin=zin(S11,PortZ1)) -1 zin(reflection_coeff, input_port_imped)
END_ELEMENT
Zopt Zopt 1
1 Function list(our_zopt=zopt(Sopt,PortZ1)) -1 zopt(gamma_opt, port_imped)
END_ELEMENT
BURIEDR BURIEDR 12
1 L 10.0mils 5 Resistor Length
2 W 3.0mils 5 Resistor Width
3 VALUE 50ohm 1 Resistance Value
4 MT 10 -1 Maximum Tolerance (%)
5 PD 100 -1 Power Dissipation (mW)
6 Layer SIGNAL_2 -1 Resistor Conductor Layer
7 Shape Bar -1 Resistor Shape
8 SpecType Electric -1 Electric|Physical Resistor Input Specification
9 TL 0.2mils 5 Resistor Termination Length
10 OW 0.2mils 5 Resistor Overlap Width
11 PL 1mils 5 Rectangular Pad Length
12 PW 1mils 5 Rectangular Pad Width
END_ELEMENT
THIN_BR THIN_BR 15
1 VALUE 50ohm 1 Resistance Value
2 Layer SIGNAL_2 -1 Resistor Conductor Layer
3 Material Ohmega -1 Thin Film Material
4 RW 3.0mils 5 Resistor Width
5 RL 10.0mils 5 Resistor Length
6 MT 10 -1 Maximum Tolerance (%)
7 PD 0.100W 8 Power Dissipation
8 SpecType Electric -1 Electric|Physical Resistor Input Specification
9 TL 0.2mils 5 Resistor Termination Length
10 OW 0.2mils 5 Resistor Overlap Width
11 PL 1mils 5 Rectangular Pad Length
12 PW 1mils 5 Rectangular Pad Width
13 PE 0.2mils 5 Pad Extend
14 PO 0.2mils 5 Pad Overlap
15 TF 1 -1 Laser Trimming Factor
END_ELEMENT
THICK_BR THICK_BR 16
1 VALUE 50ohm 1 Resistance Value
2 Layer SIGNAL_3 -1 Resistor Conductor Layer
3 Material msf_436_62-404 -1 Thick Film Material
4 RW 3.0mils 5 Resistor Width
5 RL 10.0mils 5 Resistor Length
6 MT 10 -1 Maximum Tolerance (%)
7 PD 0.100W 8 Power Dissipation
8 VT 200V 9 Voltage Rating
9 SpecType Electric -1 Electric|Physical Resistor Input Specification
10 DX 0.0mils 5 Resistor Mask Delta X
11 DY 0.0mils 5 Resistor Mask Delta Y
12 PL 1mils 5 Rectangular Pad Length
13 PW 1mils 5 Rectangular Pad Width
14 PE 0.2mils 5 Pad Extend
15 PO 0.2mils 5 Pad Overlap
16 TF 1 -1 Laser Trimming Factor
END_ELEMENT
EMBD_CAP EMBD_CAP 21
1 VALUE 50pF 4 Capacitance Value
2 Layer SIGNAL_3 -1 Capacitor Conductor Layer
3 Material Example -1 Capacitor Material
4 DL 20mils 5 Dielectric Length
5 DW 20mils 5 Dielectric Width
6 G 10mils 5 Gap between plate1 and pad2
7 MT 10 -1 Maximum Tolerance (%)
8 PD 0.100W 8 Power Dissipation
9 VT 200V 9 Voltage Rating
10 CR 0.1A 10 Current Rating
11 N 1 -1 Capacitance Stackup
12 SpecType Electric -1 Electric|Physical Resistor Input Specification
13 PL 6mils 5 Rectangular Pad Length
14 PW 25mils 5 Rectangular Pad Width
15 DE 2mils 5 Dielectric Extent
16 DO 2mils 5 Dielectric Overlap
17 DX 5mils 5 Dielectric shift along X-axis
18 P1E 2mils 5 Plate1 Extend
19 P1O 2mils 5 Plate1 Overlap
20 P2E 2mils 5 Plate2 Extend
21 P2O 2mils 5 Plate2 Overlap
END_ELEMENT
EMBD_IDCAP EMBD_IDCAP 19
1 VALUE 50pF 4 Capacitance Value
2 Layer SIGNAL_3 -1 Capacitor Conductor Layer
3 Material Example -1 Capacitor Material
4 E1 10 -1 Dielectric constant of substrate layer
5 E2 15 -1 Dielectric constant of superstrate layer
6 E3 10 -1 Dielectric constant of cover layer
7 SpecType Electric -1 Electric|Physical Resistor Input Specification
8 W 5.0mils 5 Finger width
9 G 5.0mils 5 Gap between fingers
10 Ge 5.0mils 5 Gap at end of fingers
11 L 50.0mils 5 Length of overlapped region
12 Np 3 -1 Number of fingers
13 Wt 25.0mils 5 Width of the interconnect
14 Wf 25.0mils 5 Width of the feed line
15 OH 0mils 5 Overhang
16 T1 0.1mils 5 Thickness of substrate layer
17 T2 0.01mils 5 Thickness of superstrate layer
18 T3 0.1mils 5 Thickness of cover layer
19 T4 0.005mils 5 Conductor Thickness
END_ELEMENT
MTEE_ADS MTEE_ADS 5
1 Subst MSub1 -1 Substrate instance name
2 W1 25.0mils 5 Conductor width at pin 1
3 W2 25.0mils 5 Conductor width at pin 2
4 W3 50.0mils 5 Conductor width at pin 3
5 Temp '' 12 Physical temperature
6 AutomaticWidth 'Disabled' -1
END_ELEMENT
MSABND_MDS MSABND_MDS 4
1 Subst MSub1 -1 Substrate instance name
2 W 10.0mils 5 Conductor width
3 Angle 45deg 7 Angle of bend
4 M 0.5 -1 Miter fraction
6 AutomaticWidth 'Disabled' -1
END_ELEMENT
MSOBND_MDS MSOBND_MDS 2
1 Subst MSub1 -1 Substrate instance name
2 W 10.0mils 5 Conductor width
6 AutomaticWidth 'Disabled' -1
END_ELEMENT
MRINDELM MRINDELM 12
1 Subst MSub1 -1 Substrate instance name
2 Ns 7 -1 Number of segments
3 L1 11.4mils 5 Length of first segment
4 L2 9.4mils 5 Length of second segment
5 L3 7.4mils 5 Length of third segment
6 Ln 0mils 5 Length of last segment
7 W 0.45mils 5 Conductor width
8 S 0.35mils 5 Conductor spacing
9 Wu 0.45mils 5 Width of underpass strip conductor
10 Au 0.0deg 7 Angle of departure from innermost segment
11 UE 4.0mils 5 Extension of bridge beyond inductor
12 Temp '' 12 Physical temperature
END_ELEMENT
MRINDSBR MRINDSBR 18
1 Subst MSub1 -1 Substrate instance name
2 Ns 7 -1 Number of segments
3 L1 11.4mils 5 Length of first segment
4 L2 9.4mils 5 Length of second segment
5 L3 7.4mils 5 Length of third segment
6 Ln 0mils 5 Length of last segment
7 W 0.45mils 5 Conductor width
8 S 0.35mils 5 Conductor spacing
9 Wb 0.45mils 5 Width of underpass strip conductor
10 Ab 0.0deg 7 Angle of departure from innermost segment
11 Be 4.0mils 5 Extension of bridge beyond inductor
12 Temp '' 12 Physical temperature
END_ELEMENT
MSSPLC_MDS MSSPLC_MDS 5
1 Subst MSub1 -1 Substrate instance name
2 N 2.0 -1 Number of turns
3 OD 62.0mils 5 Overall dimension
4 W 4.0mils 5 Conductor width
5 S 2.0mils 5 Conductor spacing
END_ELEMENT
MSSPLS_MDS MSSPLS_MDS 5
1 Subst MSub1 -1 Substrate instance name
2 N 2.0 -1 Number of turns
3 OD 62.0mils 5 Overall dimension
4 W 4.0mils 5 Conductor width
5 S 2.0mils 5 Conductor spacing
END_ELEMENT
MSSPLR_MDS MSSPLR_MDS 5
1 Subst MSub1 -1 Substrate instance name
2 N 3.0 -1 Number of turns
3 Ro 62.0mils 5 Inner radius
4 W 4.0mils 5 Conductor width
5 S 2.0mils 5 Conductor spacing
END_ELEMENT
MSUBST3 MSUBST3 13
1 Er[1] 4.5 -1 Dielectric Constant
2 H[1] 10mils 5 Height of Substrate
3 TanD[1] 0 -1 Dielectric Loss Tangent
4 T[1] 0mils 5 Thickness
5 Cond[1] 1.0E+50 -1 Conductor conductivity in Siemens/meter
6 Er[2] 4.5 -1 Dielectric Constant
7 H[2] 10mils 5 Height of Substrate
8 TanD[2] 0 -1 Dielectric Loss Tangent
9 T[2] 0mils 5 Thickness
10 Cond[2] 1.0E+50 -1 Conductor conductivity in Siemens/meter
11 LayerName[1] cond -1 (for Layout option) Layer to which cond is mapped
12 LayerName[2] cond2 -1 (for Layout option) Layer to which cond is mapped
13 ViaLayerName[1] diel2 -1 (for Layout option) Layer to which via hole is mapped
END_ELEMENT
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