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d25ac664f8
Some simulation demos curtesy of Holger Vogt and a new board design curtesy of Pat Deegan
43 lines
1.5 KiB
Plaintext
43 lines
1.5 KiB
Plaintext
* SPICE model NPN bipolar transistor ***BC337-25***
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* Use the symbol file ***bc337-25.asy***
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*
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* (c) Diotec Semiconductor AG
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* www.diotec.com
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* 2017-12-13
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*
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*********************************************************
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* This model is for simulation purposes only. It does *
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* not replace reviewing of the data sheet nor real life *
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* testing of the part inside the application. *
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*********************************************************
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*
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.subckt BC337-25 C B E params: Vceo=45 Vcbo=50 Vebo=5 Ic=800m hfe=400 Ices=2n Vbe=1200m ft=100Meg Ccbo=3.5p Cebo=9p Rc=1 Rb=.1 Re=.1 Eg=1.11 Xti=3
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* Above values are an example for the ***BC337-25***. Using the
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* above symbol file allows for direct insertion of other values
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* according to these data sheet parameters:
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*
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* Vceo Collector Emitter voltage, Base open
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* Vcbo Collector Base voltage, Emitter open
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* Vebo Emitter Base voltage, Collector open
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* Ic DC Collector current
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* hfe Max DC current gain
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* Ices Collector Emitter cut-off current
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* Vbe Min Base Emitter voltage
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* ft Gain bandwidth product
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* Ccbo Typ. Collector Base capacitance
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* Cebo Typ. Emitter Base capacitance
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* Rc/Rb/Re Fixed values
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*
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* Activation energy: Eg=1.11 for Si (npn) transistor
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* Sat.-current temp. exp: Xti=3 for Si (npn) transistor
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* Added for ngspice compatibility:
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.param pi=3.14159
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Q C B E Transistor
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.model Transistor NPN(Is={Ices/2} Bf={hfe} Bvcbo={Vcbo} Bvbe={-Vebo} Vceo={Vceo} Vje={Vbe} Tf={1/(2*pi*ft)} Eg={Eg} Xti={Xti} Icrating={Ic} Cjc={Ccbo*2} Cje={Cebo*2} Rc={Rc} Rb={Rb} Re={Re} mfg=Diotec type=npn)
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.ends
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